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1. 发明专利

JP2000114187A SEMICONDUCTOR MANUFACTURING APPARATUS 失效
公开(公告)号：JP2000114187A
公开(公告)日：2000-04-21
申请号：JP28370198
申请日：1998-10-06
申请人： KOKUSAI ELECTRIC CO LTD
发明人： IMAI YOSHINORI , ISHIGURO KENICHI , NOMURA HISASHI
IPC分类号： H01L21/205 , H01L21/31
摘要： PROBLEM TO BE SOLVED: To improve the yield of the formation of a MOS transistor and shorten its overall processing time, in the atmospheric-pressure formation process of its gate oxide film and the reduced-pressure formation process of its silicon polycrystalline film. SOLUTION: In a batch-processing type reduced-pressure processing chamber 32, a load-lock chamber 44 is provided, thereby interrupting the pressure communication of the reduced-pressure processing chamber 32 to a single-wafer processing type atmospheric-pressure processing chamber 31. On the sides of the atmospheric-pressure and reduced-pressure processing chambers 31, 32, carriage chambers 33, 35 are provided respectively, and between both the carriage chambers 33, 35, a buffer shelf 34 for temporarily storing thereon wafers is provided. As a result, with respect to both the atmospheric-pressure and reduced- pressure processing chambers 31, 32, the wafers can be carried independently of each other.

2. 发明专利

JP2000036467A PHOSPHORUS DIFFUSION METHOD 失效
公开(公告)号：JP2000036467A
公开(公告)日：2000-02-02
申请号：JP20317498
申请日：1998-07-17
申请人： KOKUSAI ELECTRIC CO LTD
发明人： NOMURA HISASHI , IMAI YOSHINORI , ISHIGURO KENICHI
IPC分类号： H01L21/223
摘要： PROBLEM TO BE SOLVED: To provide a phosphorus diffusion method for a poly Si film, capable of performing the phosphorus diffusion of a low temperature and easily controlling the phosphorus density, without generating at the same time an excess PSG(phosphorus silicate glass) film with the phosphorus diffusion. SOLUTION: For this phosphorus diffusion method, at vapor-diffusion of phosphorus P to a polysilicon film 12 which is a base film, the upper limit of a temperature is the relatively low temperature of 850 deg.C capable of P density control and the upper limit of a pressure is 5000 Pa capable of the P density control. Then, by making PH3 or a gas mixture containing PH3 flow over the polysilicon film as reaction gas and changing the temperature in a range 800 deg.C or lower under the pressure 5000 Pa or lower and changing the pressure in the range of the pressure 4000 Pa or lower at the temperature 850 deg.C or lower, the P density is controlled, and the phosphorus doped polysilicon film of the required phosphorus density is formed.

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