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1. 发明专利

JPS5989454A SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE 失效
公开(公告)号：JPS5989454A
公开(公告)日：1984-05-23
申请号：JP19891682
申请日：1982-11-15
申请人： HITACHI LTD , HITACHI MICROCUMPUTER ENG
发明人： OKADA YUTAKA , KANEKO KENJI , OKABE TAKAHIRO , NAGATA MINORU , YAMAZAKI KOUICHI , MATSUMOTO KEIZOU
IPC分类号： H01L27/082 , H01L21/331 , H01L21/8226 , H01L29/73 , H03K19/091
摘要： PURPOSE:To reduce delay time for the transmission of signals in a laminated I L by using a current mirror system in order to rapidly extinguish stored charges in a transistor (Tr). CONSTITUTION:A power supply 1, an injector 2 and a common emitter 3 are set up to an upper-layer I L circuit block A. The injector line 3 and a common emitter 4 are set up to a lower-layer I L circuit block B. Q0 represents the N-P-N Tr of an I L gate, and Q2 represents an N-P-N Tr constituting the interface of the laminated I L. Q3 and Q4 constitute a current mirror circuit. A period while Q3 is turned OFF is shortened because the base currents are small and stored charges are little.

2. 发明专利

JPS60186050A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS60186050A
公开(公告)日：1985-09-21
申请号：JP1428785
申请日：1985-01-30
申请人： HITACHI LTD , HITACHI MICROCUMPUTER ENG
发明人： HAYASHI MAKOTO , WATABE TOMOYUKI , OKABE TAKAHIRO , KIMURA MASATOSHI , IMAIZUMI ICHIROU , NAGATA MINORU
IPC分类号： H01L21/8226 , H01L21/331 , H01L27/02 , H01L27/082 , H01L29/73 , H01L29/732
摘要： PURPOSE:To coexist a high withstand linear IC and I L circuit by increasing the impurity density of the first semiconductor layer of the I L circuit as compared with the impurity density of other region, thereby reducing the irregularity of betai of the I L even if the irregularity of the thickness of an epitaxial layer is large. CONSTITUTION:A P type separating region 4 having a depth of 0.5mum-several mum is formed, and phosphorus ions of N type impurity are implanted and accumulated in the dosage of 10 -10 cm at the desired position 8 of the I L portion 100 on the surface of an N type layer 3. Then, a collector punching type N type layer 5 is diffused. At this time, a P type separating region 4 and an N type well 8 are simultaneously largely elongated and diffused. Thereafter, P type layers 61, 62, 63 and N type layers 71, 72, 73 are formed by the known semiconductor integrated circuit manufacturing process, metallization is performed, thereby obtaining a desired semiconductor device.

3. 发明专利

JPS6012823A SEMICONDUCTOR INTEGRATED CIRCUIT 失效
公开(公告)号：JPS6012823A
公开(公告)日：1985-01-23
申请号：JP11834683
申请日：1983-07-01
申请人： HITACHI LTD , HITACHI MICROCUMPUTER ENG
发明人： KANEKO KENJI , MATSUMOTO KEIZOU , OKABE TAKAHIRO , NAGATA MINORU
IPC分类号： H01L21/8226 , H01L27/082 , H03K19/00 , H03K19/003 , H01L27/08
摘要： PURPOSE:To remove interference between analog circuits when I L circuits are incorporated in a high voltage circuit and to actuate the titled circuit stably and highly accurately by collecting each block of an analog circuit and supplying current normalized in respective blocks to respective I L circuits. CONSTITUTION:The analog circuit is divided into blocks A, B and current is supplied to respective I L circuit blocks 10, 10'. Consequently, noises on the earth sides which are generated in the respective analog circuits A, B are absorbed by the respective I L circuits 10, 10' and are not transmitted to the other analog circuit. Thus, signal interference between the circuits A and B can be prevented.

4. 发明专利

JPS5996762A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS5996762A
公开(公告)日：1984-06-04
申请号：JP20607582
申请日：1982-11-26
申请人： HITACHI LTD , HITACHI MICROCUMPUTER ENG
发明人： WASHIO KATSUYOSHI , HAYASHI MAKOTO , WATABE TOMOYUKI , OKABE TAKAHIRO , NAGATA MINORU
IPC分类号： H01L27/04 , H01L21/822 , H01L29/94
摘要： PURPOSE:To enable to increase the capacitance of a capacitance element without increasing the number of processes by providing a plurality of grooves of the same depth as that of a groove for forming an island region on the surface of each capacitor element at the same with the formation of the island region. CONSTITUTION:A system wherein grooves 100 formed by etching in N type epitaxial layer 2 and P type impurity regions 4 are both used is used for isolating elements. A plurality of grooves 200 having the same depth as the etched groove 100 used for the element isolation are formed on the surface of each capacitance element at the same time with the formation of the grooves 100, an insulation film 3 is formed thereon, and further an electrode 6 is formed thereon, resulting in the formation of an MOS capacitor structure by means of the electrode 6, the insulation film 3, and the P type impurity region 5. An electrode 7 provided by penetrating through the insulation film 3 conducts with the P type impurity region 5. The MOS capacitor having this structure can utilize also the area of the side wall surface of the groove 200 formed on the surface of the capacitor element as a charge accumulation area, therefore the capacitor increases by the increment of this side wall area.

5. 发明专利

JPS5875867A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS5875867A
公开(公告)日：1983-05-07
申请号：JP17300981
申请日：1981-10-30
申请人： HITACHI LTD , HITACHI MICROCUMPUTER ENG
发明人： KANEKO KENJI , MATSUMOTO KEIZOU , OKABE TAKAHIRO , NAGATA MINORU
IPC分类号： G11C11/416 , H01L21/8226 , H01L21/8229 , H01L27/082 , H01L27/102 , H03K19/086
摘要： PURPOSE:To highly integrate a semiconductor device by commonly using components of a sense amplifier with a plurality of bits and commonly using an element isolating region with a plurality of elements. CONSTITUTION:The structure of a sense amplifier is composed of a plurality of bit units, each bit voltage sensing circuit has only a constant-current circuit (TrP1 and N1, P2 and N2, P3 and N3 are I L current mirror circuits) controlled in the current with differential pairs (N-P-N transistors TrT3-T6) and a control signal, and the loads TrT1, T2 of the differential circuit except this and level shifting circuit are commonly used with the plural bits. The TrT1, T2 are common at the bases and are the same potential as the collectors of TrT4, T6, and accordingly, can be similarly disposed, and the current mirror circuit can be similarly disposed at the same isolating region.

6. 发明专利

JPS6012757A SEMICONDUCTOR INTEGRATED CIRCUIT 失效
公开(公告)号：JPS6012757A
公开(公告)日：1985-01-23
申请号：JP11834583
申请日：1983-07-01
申请人： HITACHI LTD , HITACHI MICROCUMPUTER ENG
发明人： KANEKO KENJI , MATSUMOTO KEIZOU , OKABE TAKAHIRO , NAGATA MINORU
IPC分类号： H01L21/8226 , H01L27/082 , H03K19/018 , H03K19/091 , H01L27/08 , H03K19/00
摘要： PURPOSE:To make the operation stable and highly accurate by a method wherein the collector-base coupling or the drain-gate coupling of transistors determining constant current is connected to the collector or drain of the other transistor pair for constant current generation having polarity different from that of said pair, in the IC with an I L circuit incorporated in the emitter or source side of the transistor pair constituting a constant current circuit. CONSTITUTION:The other pair of constant current transistors Q3 and Q4 having the polarity inverse to that of the following pair are connected to the pair of constant current transistors Q1 and Q2 with the I L circuit incorporated, and the collector of Q3 is connected to that of Q1. The output current of Q2 is determined by the transistor Q4 and a resistor RB1 in such a manner. This circuit allows the potential of a point A to vary with the action of the circuit 10. Even when the potential of a point B varies according to it, the variation of the value of current flowing through Q1 and Q2 becomes completely eliminated because of the high impedance of Q3 on the collector side from the point B.

7. 发明专利

JPH0554536A DIGITAL SOUND INFORMATION RECEIPT AND DELIVERY SYSTEM AND SOUND REPRODUCING DEVICE 失效
公开(公告)号：JPH0554536A
公开(公告)日：1993-03-05
申请号：JP20913591
申请日：1991-08-21
申请人： HITACHI LTD
发明人： ONISHI TADASHI , OBAYASHI HIDEHITO , HAMAMOTO NOBUO , SUZUKI TATSUTO , NAGATA MINORU
IPC分类号： G11B20/10 , H04B14/04 , H04L29/06
摘要： PURPOSE:To effectively utilize a vast amount of sound information and audio devices by storing digital sound signals, such as CD and DAT, as they are in digital forms and by individually reproducing the sounds. CONSTITUTION:A signal transformation device 101 converts digital audio interface signals 109 of a CD player 106 and digital audio interface signals 110 of a DAT 107 to digital sound signals suitable to a sound reproducing device 102. And the converted sound signals are read into a semiconductor storage circuit in the sound reproducing device 102. The written sound information are individually reproduced by the sound reproducing device 102. Therefore, the vast amount of music and sound information of CD and DAT are effectively utilized, no mechanical and movable parts exist, the size is extremely reduced, the weight is also reduced and no quality degradation is resulted because all receipt and delivery are performed in digital signals.

8. 发明专利

JPH01318413A SEMICONDUCTOR CIRCUIT AND SIGNAL PROCESSING SYSTEM USING THE SAME CIRCUIT 失效
公开(公告)号：JPH01318413A
公开(公告)日：1989-12-22
申请号：JP15028288
申请日：1988-06-20
申请人： HITACHI LTD
发明人： KODERA NOBUO , YAMASHITA KIICHI , TANAKA HIRONORI , TANAKA SATOSHI , HATTA YASUSHI , NAGATA MINORU
IPC分类号： G05F3/24 , G05F3/26 , H03F3/34 , H03F3/343 , H03F3/347 , H03K17/14
摘要： PURPOSE:To reduce the change of the electrical characteristics against the change of the threshold voltage of an FET by securing the parallel connection between the drain-source current path of a 1st FET having the short circuit connection secured between the gate and the drain and the drain-source current path of another FET having the same short circuit connection as the 1st FET. CONSTITUTION:The gate-source voltage V1 of a 1st FETQ11 is dependent on the input current I1 and the threshold voltage Vth owing to the parallel connection secured between the FETQ11 and another FETQ12. The voltage-current characteristics of the parallel connection secured between the FETQ11 and Q12 are matched with the voltage-current characteristics of a 2nd FETQ2 which has the same voltage Vth and works in a saturated area. Therefore the current flowing to the drain-source current path of the FETQ2, i.e., the output current I2 of a current mirror circuit is equal to the input current I1. The current I2 is decided by the current I1 and a constant K and free from the change of the voltage Vth.

9. 发明专利

JPS6476769A HIGH POWER SEMICONDUCTOR DEVICE WITH NONVOLATILE MEMORY 失效
公开(公告)号：JPS6476769A
公开(公告)日：1989-03-22
申请号：JP23211587
申请日：1987-09-18
申请人： HITACHI LTD
发明人： YOSHIDA ISAO , OKABE TAKEAKI , NAGATA MINORU , OTAKA SHIGEO , HAGIWARA TAKAAKI
IPC分类号： H01L29/78 , H01L21/8247 , H01L27/04 , H01L27/088 , H01L27/115 , H01L29/788 , H01L29/792
摘要： PURPOSE:To unnecessitate a gate bias circuit even in the ON state, and realize the saving of power and the preventing of an accident of service interruption, by using a device having a nonvolatile memory function, in the main body of a power MOSFET or its bias circuit. CONSTITUTION:When the source 3 of a high power MOSFET Q1 acting as a main switch is grounded, a drain 4 is connected to a load terminal, and a gate 5 is connected to the floating gate terminal 6 of a MOSFET Q2 having function of electrically rewritable nonvolatile memory. A second gate terminal 8 of Q2 is grounded, a drain terminal 7 is connected to a bias circuit. By electric charge stored in the floating gate terminal 6 of Q2, the gate terminal 5 of Q1 is biased, and Q1 turns ON. Once Q1 turns ON, the ON state of Q1 is maintained, even if the bias circuit connected to the terminal 7 of Q2 is eliminated, if only charge stored in the terminal 6 is kept. On the contrary, in the case of making Q1 turn ON, the terminal 7 is reverse-biased.

10. 发明专利

JPS6412610A SEMICONDUCTOR INTEGRATED CIRCUIT 失效
公开(公告)号：JPS6412610A
公开(公告)日：1989-01-17
申请号：JP16832487
申请日：1987-07-06
申请人： HITACHI LTD
发明人： TANAKA SATOSHI , WATABE TOMOYUKI , OKADA YUTAKA , NAGATA MINORU , KONDO SHIZUO
IPC分类号： H03H11/04 , H01L21/822 , H01L27/04
摘要： PURPOSE:To form an ideal twin-T filter on a monolithic IC even with a large parasitic element by using a means controlling independently plural circuit components so as to vary independently >=2 passive components among the plural circuit components. CONSTITUTION:The twin-T filter section consists of three capacitive components QC1-QC3 and three resistive components R1-R3, a transistor (TR) Q1 constitutes an input emitter follower and two TRs Q2, Q3 constitute a feedback amplifier. When a base potential VE of the TR Q3 is changed to control the current flowing therethrough, thereby varying a base potential of a TR Q4 and varying a bias applied to the base-emitter capacitance of each capacitive component. A base potential VR of a TR Q5 is varied to control the pinch resistor R3 and the base potential Vc of the TR Q6 is controlled to control the collector-base capacitance of the capacitive component QC3. Thus, the ideal twin-T filter is formed on the monolithic IC even with the parasitic element added thereto.

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