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1. 发明专利

JPH06152094A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH06152094A
公开(公告)日：1994-05-31
申请号：JP29839092
申请日：1992-11-09
申请人： HITACHI LTD , HITACHI HARAMACHI SEMI CONDUCT
发明人： KUROSU TOSHIKI , FUJII MASAMI , YAGIHARA TOSHIKI
IPC分类号： H01L21/52 , H05K1/03 , H05K1/05 , H05K1/18 , H05K3/34
摘要： PURPOSE:To improve thermal fatigue reliability due to temperature change in a semiconductor device with a large insulation plate by providing a protrusion at the insulation substrate side of a metal base. CONSTITUTION:An insulation substrate 4b uses AlN with improved thermal conductivity and electrode treatments 4a and 4c allow Cu thin plate to be connected by a brazing material. A semiconductor element 1 is soldered on the eu electrode of AlN using Pb-Sn solder at a specific melt point. Then, wiring is made by an AlN wire 3 and adhesion is made to Cu base by soldering at a specific melt point. The thermal coefficient of expansion of Cu base is large for Si and AlN and the amount of thermal fatigue resistance at this part is important for securing reliability of a semiconductor device, where a protrusion 2a is laid at a proper location of the Cu base considering the seated state of the AlN substrate. The proper height of the protrusion is approximately 70mum when the specific solder thickness is 100mum. When the height is too large, the AlN substrate is raised by the protrusion 2a causing voids to be generated. On the other hand, when it is too small, the solder thickness cannot be uniform.

2. 发明专利

JPH05206469A INSULATED GATE BIPOLAR TRANSISTOR 失效
公开(公告)号：JPH05206469A
公开(公告)日：1993-08-13
申请号：JP1405292
申请日：1992-01-29
申请人： HITACHI LTD , HITACHI HARAMACHI SEMI CONDUCT
发明人： MIURA MASAHITO , KUROSU TOSHIKI
IPC分类号： H01L29/78 , H01L29/06 , H01L29/739
摘要： PURPOSE:To improve the short-circuit resistance and the latch-up resistance in an IGPT which has intermittent emitter structure. CONSTITUTION:In the plan view showing the embodiment, a plurality of N-type emitters 5 are provided intermittently selectively inside a P-type base 4. The gate electrode 7 made in the upper layer between an emitter 5 and an N- epitaxial layer 3 is not made in the section where the N-type emitter 5 is not present. Moreover, an emitter electrode 8 may be formed on a P-type base 4, at a specified interval from the gate electrode 7 made as mentioned above. Accordingly, the saturated current at the short-circuit between a collector and an emitter can be reduced, and besides the latch up critical current can be elevated, whereby the short-circuit resistance and the latch-up resistance of IGBT can be improved.

3. 发明专利

JPH04299835A SEMICONDUCTOR DEVICE AND MANUFACTURE 失效
公开(公告)号：JPH04299835A
公开(公告)日：1992-10-23
申请号：JP6498191
申请日：1991-03-28
申请人： HITACHI LTD , HITACHI HARAMACHI SEMI CONDUCT
发明人： NAKANO YASUKI , MORI MUTSUHIRO , KUROSU TOSHIKI , SHINNO YUJI , IWABUCHI KATSUHIRO , KURITA SHINICHI
IPC分类号： H01L29/78 , H01L21/336
摘要： PURPOSE:To provide a semiconductor device and a manufacturing method which prevent the short circuit between a gate electrode and a source electrode. CONSTITUTION:An n layer 12 is formed on a semiconductor substrate 11 having a drain electrode 41; insulating gates composed of three layers by a gate oxide film 21, a gate electrode 31 and an insulating film 22 are formed at equal intervals on the n layer 12. P-type impurities, e.g. boron, are ion-implanted by making use of the insulating gates as a mask; a P-layer 13 is formed. An insulating film 24 which contains impurities is filled into a region in which both ends of the gate electrode 31 are retreated respectively to the inside from the end of the insulating film 22; it covers the whole side faces of both end parts of the insulating gates; it is used to insulate the gate electrode 31 from a source electrode 42. Impurities, e.g. phosphorus, in the insulating film 24 are diffused into the P-layer 13 from the film; an n layer 15 is formed. The source electrode 42 comes into contact with the diffusion region in the transverse direction of the n layer 14 and with the P-layer 13.

4. 发明专利

JPH04186881A MANUFACTURE OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH04186881A
公开(公告)日：1992-07-03
申请号：JP31416490
申请日：1990-11-21
申请人： HITACHI LTD , HITACHI HARAMACHI SEMI CONDUCT
发明人： IWABUCHI KATSUHIRO , KUROSU TOSHIKI , MUSHA SHUJI
IPC分类号： H01L29/78
摘要： PURPOSE:To make it possible to uniform a turn on/turn off time distribution in a device and hence further increase a large current capacity for the device by forming a gate electrode in a region occupied by an emitter electrode with two and more conductive materials and laying out buried gate wiring formed by a low resistor layer in the shape of lattice. CONSTITUTION:A buried gate wiring 14 formed by a low resistance layer, such as Al is laid out in the shape of lattice on the lower layer of an emitter electrode 2 in addition to a gate polysilicon layer 3. The gate buried wiring 14 is connected with gate wiring 1 and the polysilicon layer 3 by way of a contact through hole 4. The buried gate wiring 14 and the emitter electrode 2 are insulated by an interlayer insulation film 15.

5. 发明专利

JPS6319828A MANUFACTURE OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS6319828A
公开(公告)日：1988-01-27
申请号：JP16363786
申请日：1986-07-14
申请人： HITACHI LTD , HITACHI HARAMACHI SEMI CONDUCT
发明人： TAKAHASHI MITSUO , IWABUCHI KATSUHIRO , KUROSU TOSHIKI , NAKAJIMA YOICHI
IPC分类号： H01L21/52
摘要： PURPOSE:To eliminate a short circuit and unevenness of the solder thickness by a method wherein a solder plate with holes is aligned with the shapes of electrodes (metal films) of different sizes formed on one main surface of a semiconductor substrate so as to make the holes positioned on films which can not be soldered and a heat treatment is carried out. CONSTITUTION:In a region which is to be a semiconductor chip, cathodes 8 and gate electrodes 9 are provided and both the electrodes 8 and 9 are made of metal with good solderability and the other parts are covered with films 12 such as silicon oxide films or glass films which can not be soldered. A semiconductor substrate 11 and a solder plate 13 with holes 14 are laminated and subjected to a heat treatment. When the solder is melted by the heat, surface tension is produced and the solder is disconnected at the narrow parts between adjacent holes 14. If material with poor solderability exists under the disconnected part, disconnection progresses easily and the melted solder is converged onto the respective electrodes 8 and 9. With this constitution, as the solder is disconnected between the electrodes 8 and 9 without fail, no short circuit between the electrodes 8 and 9 occurs and, as a number of holes 14 are provided, the thickness of the solder on the electrodes 8 and 9 can be uniform.

6. 发明专利

JPS61234073A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS61234073A
公开(公告)日：1986-10-18
申请号：JP7430485
申请日：1985-04-10
申请人： HITACHI LTD , HITACHI HARAMACHI SEMI CONDUCT
发明人： IWABUCHI KATSUHIRO , KUROSU TOSHIKI , NAKAJIMA YOICHI
IPC分类号： H01L29/06 , H01L29/74 , H01L29/861
摘要： PURPOSE:To obtain sufficient withstand voltage with high reliability by forming an FLR even in a mesa type structure. CONSTITUTION:III-Group boron which operates as an acceptor is diffused in an N-type epitaxial layer 1 of a semiconductor substrate to form a junction 6 as a P-type layer 5. Then, grooves 14, 15 of two stages of different depths are due at the ends of the thus obtained substrate, a surface protective film 7 is formed in the entire grooves, and projections 16 of the remaining shape separated in the P-N junction formed before between the grooves of the two stages are formed. At this time, the bottom of the groove 15 of the interior of the junction of the two stages is arrived at the layer 1, and the bottom of the outside groove 15 is arrived at an N type epitaxial substrate 2. Accordingly, the projections 16 operate similarly to an FLR 9 in a semiconductor device.

7. 发明专利

JPH06216167A SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF 失效
公开(公告)号：JPH06216167A
公开(公告)日：1994-08-05
申请号：JP732693
申请日：1993-01-20
申请人： HITACHI LTD , HITACHI HARAMACHI SEMI CONDUCT
发明人： YAGIHARA TOSHIKI , FUJII MASAMI , KUROSU TOSHIKI
IPC分类号： H01L21/52 , H01L23/12
摘要： PURPOSE:To provide a highly reliable semiconductor device, which can decrease the dispersion in reliability without sacrificing other performances by making the thickness of brazing filler material uniform. CONSTITUTION:An insulating substrate 4b, wherein electrodes are treated, is arranged on a metal base 2. A semiconductor element 1 is laminated and arranged on the substrate 4b. The respective parts are bonded with brazing filler material 5. In this semiconductor device, fine particles 8, whose diameter is smaller than the thickness of the brazing filler material, are contained in the brazing filler material by 30% or less. This is the semiconductor device, which is made of this brazing filler material.

8. 发明专利

JPS63299130A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS63299130A
公开(公告)日：1988-12-06
申请号：JP13121187
申请日：1987-05-29
申请人： HITACHI LTD , HITACHI HARAMACHI SEMI CONDUCT
发明人： FUKAZAWA TORU , NAKAJIMA YOICHI , KUROSU TOSHIKI , FUJII MASAMI
IPC分类号： H01L21/52
摘要： PURPOSE:To improve dielectric breakdown strength by a method wherein the head section of a bolt is incorporated in the through hole of the cylindrical section of a case, and unevenness is provided on the wall of the cylindrical section. CONSTITUTION:Two can-type semiconductor elements 3 is adhesively connected to a pair of metal substrate 1 through a soldering material 2. After they are contained in the specified position of a dented case 4, insulation resin 5 is injected into the case and hardened. Then, the upper side electrode on the glass seal section of the semiconductor element 3 is electrically connected with soldering material 6 and a metal plate 7 to form a single phase full-wave rectifier bridge circuit. Here, a step section S is provided on the cylindrical section 4a positioned on the center section of the case 4 and locked so that the head section of a bolt 8 is incorporated in the through hole. Thus, the distance of the most near point between the semiconductor element and bolt is extended, thereby improving the dielectric breakdown strength.

9. 发明专利

JP2000124781A VOLTAGE DRIVEN TYPE SEMICONDUCTOR DEVICE TEMPERATURE DETECTION CIRCUIT AND TEMPERATURE DETECTION METHOD AND DRIVING DEVICE AND VOLTAGE DRIVEN TYPE SEMICONDUCTOR DEVICE USING THE SAME 失效
公开(公告)号：JP2000124781A
公开(公告)日：2000-04-28
申请号：JP28906098
申请日：1998-10-12
申请人： HITACHI LTD , HITACHI HARAMACHI SEMI CONDUCT
发明人： HASEGAWA HIROYUKI , KUROSU TOSHIKI , SUGAYAMA SHIGERU
IPC分类号： H01L27/04 , G01R19/00 , H01L29/78 , H03K17/08 , H03K17/082 , H03K17/14
摘要： PROBLEM TO BE SOLVED: To provide a highly reliable temperature detection circuit by connecting a resistor for temperature detection to a voltage driven type semiconductor device. SOLUTION: For this temperature detection circuit, a resistor 10a provided with a positive temperature coefficient is connected between the gate terminal 4 of this voltage driven type semiconductor device 9a and the insulation gate electrode 8a of a semiconductor element 1a inside the voltage driven type semiconductor device and a temperature is detected, based on a voltage including a voltage drop by the resistor in a circuit part between the gate terminal 4 and the other terminal 5 connected to the main electrode of the semiconductor element. Thus, a detection response to temperature change is accelerated and detection accuracy is improved.

10. 发明专利

JPH04206554A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH04206554A
公开(公告)日：1992-07-28
申请号：JP32917890
申请日：1990-11-30
申请人： HITACHI LTD , HITACHI HARAMACHI SEMI CONDUCT
发明人： YAGIHARA TOSHIKI , KUROSU TOSHIKI , KAMIDA YUKIO
IPC分类号： H01L23/28 , H01L21/52
摘要： PURPOSE:To relax a stress, which is generated when a resin is made to expand by the heat generation of semiconductor substrates, and to contrive the improvement of the reliability of the substrates by a method wherein a gas layer is provided in a cap on a soft resist layer injected in the inside of the case for protecting the semiconductor substrates. CONSTITUTION:A ceramic substrate 2 under semiconductor substrates 4 is bonded on a metal heat dissipation substrate 1 via a metallized layer, the substrates 4 are encircled with a case 7 consisting of a PPS resin or the like, are coated with a soft resin 10 consisting of a silicone gels or the like and moreover, a cap 12 of a recessed form is placed on the side of the resin 10 and the gap between the cap 12 and the case 7 is filled with a hard resin 11, such as an epoxy resin or the like. When the substrates 4 generate heat and the resin 10 is made to expand, a stress, which is generated when the resin 10 is made to expand, is relaxed by a gas layer 13 in the recessed place of the cap 12 and a failure in the resin 11, the case 7, the cap 12 and the like or a peeling of the resin 11, the case 7, the cap 13 and the like is prevented. Moreover, in the case a stress is generated by the expansion of the gas layer due to a temperature rise, it is effective to provide a through hole 14 in one part of the cap 12.

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