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1. 发明专利

JP2002050728A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JP2002050728A
公开(公告)日：2002-02-15
申请号：JP2000240365
申请日：2000-08-03
申请人： HITACHI LTD , HITACHI HARAMACHI SEMI CONDUCT
发明人： ITO MASAHIRO , TAKAYANAGI YUJI , MATSUYOSHI SATOSHI , ONARI JUNICHI
IPC分类号： H01L23/44
摘要： PROBLEM TO BE SOLVED: To increase the reliability of a semiconductor power module. SOLUTION: A fluid, having an electrical insulation property, is caused to flow in a container where a semiconductor element is stored. The insulating fluid provides an internal insulation structure, while radiating heat from the semiconductor element to reduce its thermal resistance.

2. 发明专利

JP2001244291A WIRE BONDING EQUIPMENT 失效
公开(公告)号：JP2001244291A
公开(公告)日：2001-09-07
申请号：JP2000052044
申请日：2000-02-28
申请人： HITACHI LTD , HITACHI HARAMACHI SEMI CONDUCT
发明人： SATO AKIRA , ONARI JUNICHI , TAKAYANAGI YUJI , SHINNO YUJI
IPC分类号： H01L21/60
摘要： PROBLEM TO BE SOLVED: To reduce stress applied on a semiconductor element or inner leads when forming and pressure-connecting a bonding wire. SOLUTION: In wire bonding equipment, the bonding wire 6 guided by a wire guide 8 is connected to a semiconductor element 4 or inner lead on a lead frame 1 using a bonding tool 7. The bonding wire has a cross section formed into a non-circular shape, and then is pressure-connected to the semiconductor element or inner lead by the bonding tool. Between the wire guide and a part of the wire to be pressure-connected by the bonding tool, a wire forming tool is installed to form the bonding wire. The wire forming tool consists of a projecting part of the bonding tool and a flat part of the wire guide.

3. 发明专利

JP2001244273A DIODE AND ITS MANUFACTURING METHOD 失效
公开(公告)号：JP2001244273A
公开(公告)日：2001-09-07
申请号：JP2000054140
申请日：2000-02-29
申请人： HITACHI LTD , HITACHI HARAMACHI SEMI CONDUCT
发明人： MURAKAMI SUSUMU , MIURA MASATAMI , TAKAHASHI MASAO , KOBAYASHI SATSUKI
IPC分类号： H01L23/29 , H01L21/329 , H01L23/31 , H01L29/861
摘要： PROBLEM TO BE SOLVED: To obtain a diode whose electric characteristic is not degraded when a thermal shock is applied repeatedly many times during its use and to obtain its manufacturing method. SOLUTION: In a bevel-shaped diode, one main face is a (111) plane, and a p+ junction, a p-junction and an n+ junction are exposed on its side face. It is machined in such a way that its diameter as viewed from the above an intermediate p-layer 1 is larger than the diameter of a p+ layer 2 and an n+ layer 3. A bevel angle is formed at 75 deg. or more by an oxide etching operation and an alkali etching operation. A flat end face is formed in such a way that irregularities are not generated on the end face of the p-junction and the n+ junction. As a result, it is possible to provide a diode whose cut off characteristic in the reverse direction is superior.

4. 发明专利

JP2001127214A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JP2001127214A
公开(公告)日：2001-05-11
申请号：JP30796299
申请日：1999-10-29
申请人： HITACHI LTD , HITACHI HARAMACHI SEMI CONDUCT
发明人： NAKAJIMA TSUTOMU , MIURA MASATAMI , SHIKURA TOSHIO
IPC分类号： H01L21/52 , H01L23/28 , H01L23/29 , H01L23/31 , H01L23/48 , H01L29/861
摘要： PROBLEM TO BE SOLVED: To prevent a defect in the reverse directional characteristics of a semiconductor deivce from being generated in the device which is manufactured by using a junction coating resin. SOLUTION: A semiconductor device has a structure that the diameter of a lead electrode body is set within a size of -0.1 to +0.4 to the diameter of a semiconductor chip and a film thickness favorable to a junction coating resin is ensured. By ensuring the film thickness favorable to the resin, a separation of the resin from the device and a breakage of the resin are not generated and a defect in the reverse directional characteristics of the device is prevented from being generated.

5. 发明专利

JP2000058867A SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF 失效
公开(公告)号：JP2000058867A
公开(公告)日：2000-02-25
申请号：JP21878798
申请日：1998-08-03
申请人： HITACHI LTD , HITACHI HARAMACHI SEMI CONDUCT
发明人： ISHIDA YASUKI , SAKURAI NAOKI , SHIMOYAMA MANABU , MORI MUTSUHIRO
IPC分类号： H01L29/73 , H01L21/329 , H01L21/331 , H01L21/332 , H01L29/732 , H01L29/74 , H01L29/861
摘要： PROBLEM TO BE SOLVED: To directly form an aluminium electrode in low contact resistance on an n type substrate by using arsenic as impurities in the n type substrate. SOLUTION: An n type substrate 1 uses arsenic as impurities in the concentration of 1×1019 cm3, besides, the thickness thereof is about 500 μm. An n-layer 2 is formed on one side of the n type substrate 1 by crystalline growth, etc., and the impurity concentration is 1×1015 cm3, and thickness of 60 μm. A p layer 3 is formed by doping p conductivity type boron on the n type layer 2 in concentration of 1×1017 cm3. A surface electrode 4 is in ohmic contact with the p layer 3. As for material of the backside electrode, aluminum is used to make low resistance contact with the n type substrate 1. Accordingly, an aluminum electrode in low direct contact can be formed on the n type substrate 1.

6. 发明专利

JPH11313488A DRIVE CIRCUIT FOR INVERTER DEVICE 失效
公开(公告)号：JPH11313488A
公开(公告)日：1999-11-09
申请号：JP11816298
申请日：1998-04-28
申请人： HITACHI LTD , HITACHI HARAMACHI SEMI CONDUCT
发明人： OURA HITOSHI , KAWAMOTO KOJI
IPC分类号： H02M7/5387
摘要： PROBLEM TO BE SOLVED: To reduce power consumption when integrating a circuit by using a level shift circuit being operated by a pulse signal, and by keeping on an upper-arm switching element by the retention function of drive charge, only during a pulse period. SOLUTION: A lower arm QB1 is turned on and off by a control signal SB, via a driving circuit 3 where VCC is used as a power supply. An upper arm QT1 is driven by a drive element M5, where a power supply VCH for the upper arm is used as the power supply. An upper arm ST gives an external signal from a circuit 11 for driving switching elements S1 and S2 by a signal with the same logic as an upper-arm switching element to have it operate. When the element S1 is turned on and voltage drops in a resistor Ra for lowering potential, the signal is transferred by logic inverters 8 and 9, and a P- channel switching element M5 is turned on for driving the QT1. After the drive period of QT1, the P-channel switching element M5 is turned off, and if the QT1 that is a voltage-type switching element is once driven, a driving voltage is kept and on-state is maintained, since the QT1 is a voltage-type switching element.

7. 发明专利

JPH11312732A MANUFACTURE OF DIELECTRIC SEPARATED SUBSTRATE 失效
公开(公告)号：JPH11312732A
公开(公告)日：1999-11-09
申请号：JP11816798
申请日：1998-04-28
申请人： HITACHI LTD , HITACHI HARAMACHI SEMI CONDUCT
发明人： KUMAHARA KENJI , SUZUKI TOSHIMICHI , NEMOTO TOYOICHI , TAKAYANAGI YUJI , SAKURABA KOJI
IPC分类号： H01L21/762 , H01L21/02 , H01L27/12
摘要： PROBLEM TO BE SOLVED: To prevent the generation of voids at the outer surface part of a wafer, by providing the step difference at the outer surface side on the side of a polycrystalline semiconductor layer, and further processing the outer diameter in compliance with the second single-crystal semiconductor substrate that becomes the supporting body. SOLUTION: On one surface of a single-crystal silicon substrate 1, a plurality of V-shaped separating groves 2 are formed. Then, a silicon oxide film 3 is formed on the entire surface of the substrate 1 by thermal oxidation. On this silicon oxide film 3, a polycrystalline silicon layer 4 is deposited, and a substrate 5 is formed. Then, at the part of the substrate 5 on the side of the polycrystalline silicon layer 4, a step difference is provided. The surface of the polycrystalline silicon layer 4, on which the step difference is provided, is ground and polished and flattened. Then, after the substrate 5 and a polycrystalline silicon substrate 7 are stuck together, heat treatment is performed, and the interfaces of the substrate 5 and the substrate 7 are bonded. The side of the substrate 5 is ground and polished, and a dielectric separating substrate 12 where a plurality of single crystal inlands 11 are formed is completed.

8. 发明专利

JPH11163632A OSCILLATOR CIRCUIT 失效
公开(公告)号：JPH11163632A
公开(公告)日：1999-06-18
申请号：JP32267897
申请日：1997-11-25
申请人： HITACHI LTD , HITACHI ENG CO LTD , HITACHI HARAMACHI SEMI CONDUCT
发明人： OKUTSU MITSUHIKO , SANPEI TADASHI , KOIKE KATSUNORI , NUMATA MASAHIKO , SUGAI MASARU , KIDA HIROYUKI
IPC分类号： H03B5/32 , H03B5/06
摘要： PROBLEM TO BE SOLVED: To obtain an oscillator circuit which drastically reduces oscillation rise time and gets an oscillation output just after oscillation start. SOLUTION: A short-circuiting means 7 is placed side by side as an input terminal voltage biasing means of an inverting amplifier 1 between its input and output terminals, also, an output buffer circuit which receives an output of the amplifier 1 and performs an oscillation output always amplifies a minute amplitude output of the amplifier 1, the amplifier 1 is activated at the time of oscillation start, also, a vibrator 5 is excited by giving potential difference to both ends of the vibrator 5 and the intra-input-output terminal of the amplifier 1 is short-circuited by thereafter operating the means 7 in a prescribed period. Thus, because resonance current peak in the vibrator 5 is increased and minute vibrations of the vibrator 5 are promoted, it is possible to perform oscillation start at an early stage.

9. 发明专利

JPH1174741A CURRENT MIRROR CIRCUIT 失效
公开(公告)号：JPH1174741A
公开(公告)日：1999-03-16
申请号：JP23210597
申请日：1997-08-28
申请人： HITACHI LTD , HITACHI HARAMACHI SEMI CONDUCT
发明人： INABA MASAMITSU , IWAMURA MASAHIRO , SUKEGAWA KEIICHI
IPC分类号： H03F3/343
摘要： PROBLEM TO BE SOLVED: To obtain the current mirror circuit which is tolerant of noisy environment by one end and the other end of an AC potential equalizing circuit to the emitter and collector of a bipolar transistor. SOLUTION: A 1st NPN transistor 11 turns on and off repeatedly owing to noise. Consequently, a 2nd NPN transistor 12 also turns on and off repeatedly and a constant current can not be outputted. For the purpose, the AC potential equalizing circuit 31 is connected between the emitter and collector of the 1st NPN transistor 11. Consequently, the emitter and collector of the 1st NPN transistor 11 are held at the same potential in terms of AC. As for noise having rising polarity, the base potential of the 1st NPN transistor 11 also rises following a rise in the emitter potential. Consequently, the VBE of the 1st NPN transistor 11 is always held constant and its on state is maintained without depending upon the noise, so that the constant current can be outputted from the transistor 12.

10. 发明专利

JPH10210764A DRIVING CIRCUIT OF INDUCTIVE LOAD 失效
公开(公告)号：JPH10210764A
公开(公告)日：1998-08-07
申请号：JP724397
申请日：1997-01-20
申请人： HITACHI LTD , HITACHI HARAMACHI SEMI CONDUCT
发明人： AIZAWA JUNICHI , WADA MASAYUKI , SASAKI ATSUSHI
IPC分类号： H02M7/515 , H02M7/5387 , H02P6/06 , H02P6/08
摘要： PROBLEM TO BE SOLVED: To control a current applied to inductive loads from a power supply by a method wherein the inductive loads are connected to the outputs of three switching circuits with totem pole constructions so as to form a 3-phase Y- connection, and the respective switching circuits are turned on and off. SOLUTION: A constant current bias circuit consisting of a P-N-P transistor Q11 and an N-P-N transistor Q12 supplies an off-bias current to the base of an N-P-N transistor Q03 used for the short circuit between gate and cathode of a GTO SU01. The off-bias current is supplied from a high voltage power supply VCCH and selected so as to apply a current pulse appearing on the P-gate of an upper GTO by an estimated dv/dt noise to the N-P-N transistor Q03 sufficiently. As a voltage appearing between the motor terminals in the off-states of upper side and lower side switches is VCCH/2, the emitter potential of the N-P-N transistor Q03 is VCCH/2, so that the off-bias circuit can supply a base current to the N-P-N transistor Q03 by the potential difference.

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