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1. 发明专利

JPH03163892A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH03163892A
公开(公告)日：1991-07-15
申请号：JP30218989
申请日：1989-11-22
申请人： HITACHI LTD , HITACHI HARAMACHI SEMI CONDUCT
发明人： KATO YOSHIAKI , YAMAZAKI TATSUO , SATO SEIZO , NAKAJIMA YOICHI
IPC分类号： H05K1/18 , H05K3/30
摘要： PURPOSE:To improve the vibration resistance of a semiconductor device by providing clicks united to a resin case in one body to at least part of the resin case being in contact with a printed board. CONSTITUTION:Clicks 7a and 7b united to a resin case 1 in one body are provided to at least part of the resin case 1 being in contact with a printed board 6. Therefore, the clicks 7a and 7b provided to the case 1 being in contact with the board 6 act to fix the board 6 by themselves after the case 1 is mounted on the board 6. Then, since the fixation of a self-cooling semiconductor device to the board 6 is also performed by the resin case 1 itself, amplification of vibrations in the lateral direction and, accordingly, uncontrolled movement of the end section are restricted, and thus, the stress caused by the vibrations is distributed to the click sections 7a and 7b and an outside terminal section 3. Thus the vibration resistance of this semiconductor device can be improved.

2. 发明专利

JPS63283043A MANUFACTURE OF INSULATION MOLDED SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS63283043A
公开(公告)日：1988-11-18
申请号：JP11686687
申请日：1987-05-15
申请人： HITACHI LTD , HITACHI HARAMACHI SEMI CONDUCT
发明人： YAMAZAKI TATSUO , KATO YOSHIAKI , SATO SEIZO , NARITA KAZUTOYO , NAKAJIMA YOICHI
IPC分类号： H01L23/02 , H01L23/08 , H01L23/24 , H05K3/34
摘要： PURPOSE:To enable an outer packaging resin case to be bonded well to a metallic printed circuit board, by fusing the resin case so that the case can be bonded to the board simultaneously when electronic circuit components are soldered to the metallic printed circuit board. CONSTITUTION:Electronic circuit components 3a-3d and external terminals 2a and 2b are mounted on conductor patterns 13a-13c of a metallic printed circuit board 1, and an outer packaging resin case 4 is mounted on an insulating layer 12 on the board 1. The board 1 is put on a conveyor belt to be introduced into a reflowing furnace. The board 1 is heated by heat from the belt, whereby a bonding layer 4 and the case 4 are fused. In this manner, the case 4 can be bonded well to the board.

3. 发明专利

JPS61237456A INSULATED MOLDING TYPE SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS61237456A
公开(公告)日：1986-10-22
申请号：JP7754085
申请日：1985-04-13
申请人： HITACHI LTD , HITACHI HARAMACHI SEMI CONDUCT
发明人： YAMAZAKI TATSUO , MIURA MASATAMI , FUJII MASAMI , IIMURA KENJI , NAKAJIMA YOICHI
IPC分类号： H01L23/29 , H01L23/14 , H01L23/28 , H01L23/373
摘要： PURPOSE:To reduce thermal resistance and to minimize stress applied to a semiconductor chip on the fitting of an external fin by specifying each linear expansion coefficient and modulus of longitudinal elasticity of a metallic substrate, a sub-metallic substrate and an insulating plate in a device in which the semiconductor chip is mounted to the metallic substrate through the sub-metallic substrate and the insulating plate. CONSTITUTION:A semiconductor chip 10 is bonded directly with a metallic conductor pattern 8a on an insulating plate 7 only through a solder material 9a. Consequently, the increase of thermal resistance is avoided, and thermal resistance is reduced. The quality of materials of a metallic substrate 2, a sub-metallic substrate 4 and the insulating plate 7 are selected so that alpha3

4. 发明专利

JPH03150866A SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF 失效
公开(公告)号：JPH03150866A
公开(公告)日：1991-06-27
申请号：JP28869089
申请日：1989-11-08
申请人： HITACHI LTD , HITACHI HARAMACHI SEMI CONDUCT
发明人： NARITA KAZUTOYO , NAKAJIMA YOICHI , MIURA MASATAMI , IWAMA TOSHIO
IPC分类号： H01L23/48
摘要： PURPOSE:To improve salt-water-proofness by a method wherein a final sealing layer made of epoxy resin is so formed as to cover a metal vessel and overflow the vessel into a part of a radiation fin. CONSTITUTION:A silicon chip 2 is attached to the inner surface of a dish-type metal vessel 1 having a shallow cylindrical side wall by soldering and the inside of the metal vessel 1 is filled with silicone resin 6. Then epoxy resin 9 is applied so as to cover the header part of the upper lead electrode 4 of the metal vessel 1 which is soldered to the recess of a radiation fin 7 and the upper surface of the silicone resin 6 filling the inside of the metal vessel 1 and overflow the cylindrical side wall of the metal vessel into the whole inside of the recess of the radiation fin 7 to form a sealing layer. With this constitution, the penetration of salt-water into the mesa surface of the silicon chip 2 provided in the metal vessel can be suppressed.

5. 发明专利

JPH0194715A SOLID STATE RELAY 失效
公开(公告)号：JPH0194715A
公开(公告)日：1989-04-13
申请号：JP25266487
申请日：1987-10-07
申请人： HITACHI LTD , HITACHI HARAMACHI SEMI CONDUCT
发明人： YAMAZAKI TATSUO , SATO SEIZO , NARITA KAZUTOYO , NAKAJIMA YOICHI , KATO YOSHIAKI
IPC分类号： H03K17/00 , H03K17/78
摘要： PURPOSE:To reduce an induced noise due to the stray capacity between input/ output circuits by providing a switch part on a metallic printed wiring board laminated an insulating layer and a conductor pattern for wiring and inserting a capacitor in parallel to an input edge. CONSTITUTION:A solid state relay (SSR)1 has a photo TRIAC coupler 3 between input/output circuits and a limit resistance 4 is connected serially with a light emitting diode 3a to an input circuit. A capacitor 10 is connected between input terminals 11 and 12. An output circuit has a switch part, etc., with a photo TRIAC 3b and a TRIAC a main part. In this constitution, when an external noise is impressed to the output circuit of SSR 1 including the power source, the induced noise to an input circuit becomes a problem. Since the closed loop of the capacitor 10, the diode 3a and the limit resistance 4 is formed, the induced noise is attenuated instantaneously in the loop.

6. 发明专利

JPS63299130A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS63299130A
公开(公告)日：1988-12-06
申请号：JP13121187
申请日：1987-05-29
申请人： HITACHI LTD , HITACHI HARAMACHI SEMI CONDUCT
发明人： FUKAZAWA TORU , NAKAJIMA YOICHI , KUROSU TOSHIKI , FUJII MASAMI
IPC分类号： H01L21/52
摘要： PURPOSE:To improve dielectric breakdown strength by a method wherein the head section of a bolt is incorporated in the through hole of the cylindrical section of a case, and unevenness is provided on the wall of the cylindrical section. CONSTITUTION:Two can-type semiconductor elements 3 is adhesively connected to a pair of metal substrate 1 through a soldering material 2. After they are contained in the specified position of a dented case 4, insulation resin 5 is injected into the case and hardened. Then, the upper side electrode on the glass seal section of the semiconductor element 3 is electrically connected with soldering material 6 and a metal plate 7 to form a single phase full-wave rectifier bridge circuit. Here, a step section S is provided on the cylindrical section 4a positioned on the center section of the case 4 and locked so that the head section of a bolt 8 is incorporated in the through hole. Thus, the distance of the most near point between the semiconductor element and bolt is extended, thereby improving the dielectric breakdown strength.

7. 发明专利

JPS6310552A MOLDED SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS6310552A
公开(公告)日：1988-01-18
申请号：JP15402386
申请日：1986-07-02
申请人： HITACHI LTD , HITACHI HARAMACHI SEMI CONDUCT
发明人： MIURA MASATAMI , IWAGAMI MITSUHIRO , FUJII MASAMI , NAKAJIMA YOICHI , YAMAZAKI TATSUO
IPC分类号： H01L23/50 , H01L23/28
摘要： PURPOSE:To improve the reliability of a molded semiconductor device by forming a cutout substantially in the same surface as the brazed part of a terminal to alleviate stresses to the brazed part and an insulating plate through a terminal from a resin. CONSTITUTION:An insulating plate 3 coated with a metal film 7 on a heat sink plate 2, a terminal 1, a semiconductor chip 8 and wirings 9 formed on the plate are electrically connected with brazing materials 10, 10a, the essential part of a molded semiconductor device is coated protectively with soft resin 5, while a hard resin 6 is charged inside a case 4 to shield it from an atmospheric air. The boundary surfaces between the terminal 1 and the resin 6 are not necessarily bonded, and the function of the device is maintained in the terminal strength of handling the device and environments of high temperature and high moisture. Thus, the resin 6 is filled in the cutout 1a of the terminal 1 to prevent it from sliding. The expanding and contracting (stresses) directions of the resin applied to the terminal 1 have X-, Y-, Zand composite directions thereof. For example, a bent (y) due to a stress occurs at the terminal cutout A by the Y-direction stress applied to the terminal 1 to alleviate the stresses applied to the brazing material 10a and the plate 3.

8. 发明专利

JPH03163862A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH03163862A
公开(公告)日：1991-07-15
申请号：JP30219089
申请日：1989-11-22
申请人： HITACHI LTD , HITACHI HARAMACHI SEMI CONDUCT
发明人： FUKAZAWA TORU , NAKAJIMA YOICHI , FUJII MASAMI , YAGIHARA TOSHIKI
IPC分类号： H01L25/11
摘要： PURPOSE:To contrive the improvement of a heat dissipation property and a heat resistance between a case and metal substrates by a method wherein the metal substrates are installed on the protrusions of the step parts of the case and are fitted and fixed in the case in such a way that the side and base surfaces of the substrates are exposed from the base of the case. CONSTITUTION:Previously manufactured can type semiconductor elements 3 are fixed and connected on and to a pair of metal substrates 1 two pieces by two pieces through a brazing metal 2 owning a prescribed rectifier direction and upper side electrodes on glass seal parts of the elements 3 are electrically connected to each other by metal plates 7 to form a single-phase full-wave rectifier bridge circuit. Then, after the substrates 1 are fixed on prescribed step parts of a previously formed frame type case 4a, a previously molded base plate 4b is fitted in the base part of the case 4a and is bonded to the case 4a with an insulative resin 8. In such a way, the substrates 1 with the can type semiconductor elements 3 soldered thereon are fitted and fixed in the insulative case 4a to eliminate an insulating resin between the substrates 1 and the base part 4b of the case. Thereby, the improvement of a heat dissipation property and a heat resistance between the substrates 1 and the case is contrived.

9. 发明专利

JPS6319828A MANUFACTURE OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS6319828A
公开(公告)日：1988-01-27
申请号：JP16363786
申请日：1986-07-14
申请人： HITACHI LTD , HITACHI HARAMACHI SEMI CONDUCT
发明人： TAKAHASHI MITSUO , IWABUCHI KATSUHIRO , KUROSU TOSHIKI , NAKAJIMA YOICHI
IPC分类号： H01L21/52
摘要： PURPOSE:To eliminate a short circuit and unevenness of the solder thickness by a method wherein a solder plate with holes is aligned with the shapes of electrodes (metal films) of different sizes formed on one main surface of a semiconductor substrate so as to make the holes positioned on films which can not be soldered and a heat treatment is carried out. CONSTITUTION:In a region which is to be a semiconductor chip, cathodes 8 and gate electrodes 9 are provided and both the electrodes 8 and 9 are made of metal with good solderability and the other parts are covered with films 12 such as silicon oxide films or glass films which can not be soldered. A semiconductor substrate 11 and a solder plate 13 with holes 14 are laminated and subjected to a heat treatment. When the solder is melted by the heat, surface tension is produced and the solder is disconnected at the narrow parts between adjacent holes 14. If material with poor solderability exists under the disconnected part, disconnection progresses easily and the melted solder is converged onto the respective electrodes 8 and 9. With this constitution, as the solder is disconnected between the electrodes 8 and 9 without fail, no short circuit between the electrodes 8 and 9 occurs and, as a number of holes 14 are provided, the thickness of the solder on the electrodes 8 and 9 can be uniform.

10. 发明专利

JPS61234073A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS61234073A
公开(公告)日：1986-10-18
申请号：JP7430485
申请日：1985-04-10
申请人： HITACHI LTD , HITACHI HARAMACHI SEMI CONDUCT
发明人： IWABUCHI KATSUHIRO , KUROSU TOSHIKI , NAKAJIMA YOICHI
IPC分类号： H01L29/06 , H01L29/74 , H01L29/861
摘要： PURPOSE:To obtain sufficient withstand voltage with high reliability by forming an FLR even in a mesa type structure. CONSTITUTION:III-Group boron which operates as an acceptor is diffused in an N-type epitaxial layer 1 of a semiconductor substrate to form a junction 6 as a P-type layer 5. Then, grooves 14, 15 of two stages of different depths are due at the ends of the thus obtained substrate, a surface protective film 7 is formed in the entire grooves, and projections 16 of the remaining shape separated in the P-N junction formed before between the grooves of the two stages are formed. At this time, the bottom of the groove 15 of the interior of the junction of the two stages is arrived at the layer 1, and the bottom of the outside groove 15 is arrived at an N type epitaxial substrate 2. Accordingly, the projections 16 operate similarly to an FLR 9 in a semiconductor device.

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