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    • 5. 发明专利
    • CLEAN ROOM
    • JP2000294471A
    • 2000-10-20
    • JP9514799
    • 1999-04-01
    • HITACHI LTD
    • KOIKE ATSUYOSHITOKUNAGA KENJI
    • H01L21/02F24F7/06F24F13/32
    • PROBLEM TO BE SOLVED: To reduce the running cost of a clean room by reducing the energy consumption. SOLUTION: The air supplied to the supply chamber 11 of a clean room 10 is blown into a clean chamber 12 as a vertical downward laminar air flow, after the dust contained in the air is removed by means of a fan filter unit 14 and discharged to a discharge chamber 13 through a grating 15. The air supplied to the clean chamber 12 is blown into the loading areas 26 of clean benches 16 as vertical downward laminar air flows by means of air conditioners 22. While the air passes through the air conditioners 22, the temperature and moisture of the air are adjusted to prescribed values by means of the air conditioners 22. Since the air conditioners 22 which adjust the temperature and moisture of the air are respectively installed to the clean benches 16 and temperature and moisture adjustment are only required for the air supplied to the clean benches 16, the energy consumed for adjusting the temperature and moisture of the air can be reduced and, consequently, the running cost of the clean room 10 can be reduced.
    • 10. 发明专利
    • MANUFACTURE OF SEMICONDUCTOR DEVICE
    • JPS6372141A
    • 1988-04-01
    • JP21578186
    • 1986-09-16
    • HITACHI LTD
    • TOKUNAGA KENJIKOIKE ATSUYOSHIIKEDA SHUJI
    • H01L21/302H01L21/3065H01L21/3205
    • PURPOSE:To obtain an etching process stable and excellent in repeatability of cross sectional shapes, by exchanging an isotropic etching process and an anisotropic etching process with a boundary of an intermediate layer interposed between multilayer interconnection. CONSTITUTION:An upper side wiring 2 is processed in accordance with a pattern of a resist 4 by the use of resist light in an isotropic etching process, so that an isotropic etching region 5 is formed. This isotropic etching region 5 is formed in a tapered etching structure in which the cross sectional area of this region is made smaller downwards. Luminous spectra of an intermediate layer 3 below the isotropic etching region 5 are detected at that time. If the intermediate layer 3 is made of tantalum, for example, the luminous spectrum of tantalum is detected when the intermediate layer 3 is exposed in the end of the isotropic etching precess. Just at the time of this detection, the etching method is exchanged from the isotropic etching to the anisotropic etching. Thus, a wiring structure excellent in repeatability of cross sectional shapes can be obtained.