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1. 发明专利

JP2001053387A SEMICONDUCTOR OPTICAL DEVICE 失效
公开(公告)号：JP2001053387A
公开(公告)日：2001-02-23
申请号：JP22618399
申请日：1999-08-10
申请人： HITACHI LTD
发明人： KOMORI MASAAKI , AOKI MASAHIRO , OYA AKIRA , TSUCHIYA TOMONOBU , UOMI KAZUHISA
IPC分类号： H01S5/34
摘要： PROBLEM TO BE SOLVED: To manufacture a high-output and high-reliability integrated semiconductor optical device having a high yield by including, in the optical device, a distorted quantum well structure made by alternately stacking distorted quantum well layers, having a specified compressive strain and barrier layers by several cycles. SOLUTION: On an n-type InP substrate 1, an n-type InP buffer layer 2 and an n-type InGaAsP lower guide layer 3 are grown. Then, SiO2 ions are implanted only to a laser region 4. This semiconductor basic substance is annealed to form a diffraction grating section as an optical feedback means 50 for semiconductor laser sections. Next, InGaAsP barrier layers and InGaAsP distorted quantum well layers are stacked alternately in six cycles to form a distorted multiple quantum well waveguide structure 5 of a six-cycle structure, and then an InGaASP upper guide layer 6 is grown. Then, an un-InP cap layer is grown, SiO2 is evaporated and then phosphorus ions are implanted to form the laser region 4, a modulator region 7, and a semi-insulating region 8. Thereafter, a p-type InP clad layer 9 is grown and an electrical insulation 10 and electrodes 11, 60 are formed, and then integrated semiconductor optical device which can be made high in output and in reliability is formed.

2. 发明专利

JPH10294526A MANUFACTURE OF SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH10294526A
公开(公告)日：1998-11-04
申请号：JP9999397
申请日：1997-04-17
申请人： HITACHI LTD
发明人： OKUNO YAE , SHINODA KAZUNORI , AOKI MASAHIRO , TSUCHIYA TOMONOBU , UOMI KAZUHISA
IPC分类号： H01L21/205 , H01S5/00 , H01S3/18
摘要： PROBLEM TO BE SOLVED: To provide a method for easily manufacturing a diffusion inhibition layer so as to prevent the decrease in current constriction effect, etc., due to the diffusion of a dopant, represented by the mutual diffusion of Zn and Fe, when a mesa striped part is buried. SOLUTION: On a semiconductor substrate 1, semiconductor lasers 2 and 3 are laminated and machined in a mesa shape and before its surface and flank are buried in the semiconductor layer 5, an area 6 for inhibiting diffusion is formed on the mesa surface and flank. The diffusion of doped impurities is suppressed among the semiconductor substrate 1, semiconductor layers 2 and 3, and semiconductor layer 5.

3. 发明专利

JPH098406A REFLECTION PREVENTING FILM FORMING METHOD 失效
公开(公告)号：JPH098406A
公开(公告)日：1997-01-10
申请号：JP15130195
申请日：1995-06-19
申请人： HITACHI LTD
发明人： TAKANO HIDEAKI , TSUCHIYA TOMONOBU , IDO TATSUMI , KOIZUMI MARI , INOUE HIROAKI
IPC分类号： G02B1/11 , H01S5/00 , H01S3/18
摘要： PURPOSE: To measure the reflection factor of 1% or smaller by a method wherein a reflection preventing film is simultaneously deposited on a P-type InP board besides the sample to be deposited on the reaction preventing film. CONSTITUTION: A sample support 21 is provided when bar-like semiconductor lasers are fixed to a jig, the bar-like semiconductor lasers are arranged with their edge faces facing upward. A P-type InP board 23 is mounted adjacent to the semiconductor lasers 22, and the bar-like semiconductor lasers 22 are fixed by the plate spring 24 supported by a plate spring support 25. As the absorption of light originated in IVBA is large, the coefficient absorption of the P-type InP board 23 is larger by one order of magnitude or more than the N-type or a semi-insulating InP board. Accordingly, the residual reflection from the backside of the board is absorved into the board and residual reflection is not generated, and the reflection factor of 1% or smaller can be measured easily.

4. 发明专利

JPH08330671A SEMICONDUCTOR OPTICAL ELEMENT 失效
公开(公告)号：JPH08330671A
公开(公告)日：1996-12-13
申请号：JP13318095
申请日：1995-05-31
申请人： HITACHI LTD
发明人： AOKI MASAHIRO , TSUCHIYA TOMONOBU , OTOSHI SO , SAGAWA MISUZU , HIRAMOTO KIYOHISA , UOMI KAZUHISA
IPC分类号： G02B6/42 , G02B6/122 , H01L33/06 , H01L33/14 , H01L33/30 , H01S5/00 , H01S5/026 , H01S3/18 , H01L33/00
摘要： PURPOSE: To provide the structure of a semiconductor optical guide element coupled to a fiber with high efficiency, a method for simply manufacturing the same, an element structure adapted for when the method is applied to a laser, an optical amplifier, an optical switch, a photodetector or an optical guide element having the two of them monolithically integrated and a method for manufacturing the same. CONSTITUTION: The lateral width of a laser active waveguide is suitably varied thereby to enhance an optical guide element such as a semiconductor laser, and inputting or emitting beam diameter is increased to enhance the coupling efficiency with a fiber. Further, a ridge waveguide is formed in this structure to reduce the optical intensity at the emitting end face of an active layer 1. Accordingly, the output can be enhanced, the lateral mode can be stabilized, and the high reliability (long life) in the high efficiency coupling and high output state to the fiber can be easily performed.

5. 发明专利

JPH0832173A SEMICONDUCTOR LASER 失效
公开(公告)号：JPH0832173A
公开(公告)日：1996-02-02
申请号：JP16767394
申请日：1994-07-20
申请人： HITACHI LTD
发明人： TOYONAKA TAKASHI , SAGAWA MISUZU , HIRAMOTO KIYOHISA , TSUCHIYA TOMONOBU , SHINODA KAZUNORI
IPC分类号： H01S5/00 , H01S3/18
摘要： PURPOSE:To ensure high-optical-output and stable single transverse mode oscillation by making the effective refractive index of a stripe part larger than the effective refractive indexes of both side parts of the stripe by a prescribed value, in a semiconductor laser which has an InGaAs quantum well active layer and a clad layer. CONSTITUTION:A buffer layer 2, whose lattice matches with that of an n-type GaAs substrate 1, a clad layer 3, and a quantum well active layer 8 composed of a quantum well layer 16, two barrier layers 15 and 17 sandwiching this, and two SCH layers 14 and 18 are formed, and thereon, a clad layer 5, a light waveguide layer 6, a clad layer 7, a buffer layer 8, and a cap layer 9 are grown in order. Next, this semiconductor laser is etched to the middle of the clad layer, through the cap layer 9 and the buffer layer 8. Next, the light waveguide layer 6 is removed, and a current constricting layer 10 is stopped, and a contact layer 11 is grown. P-side and n-side electrodes 12 and 13 are deposited, thus a semiconductor laser where the resonator is 900mum long is manufactured by cleavage method. Hereby, single transverse oscillation mode being stable even with high optical output is maintained.

6. 发明专利

JPH07307525A SURFACE EMISSION SEMICONDUCTOR LASER 失效
公开(公告)号：JPH07307525A
公开(公告)日：1995-11-21
申请号：JP10106594
申请日：1994-05-16
申请人： HITACHI LTD
发明人： SHINODA KAZUNORI , UOMI KAZUHISA , HIRAMOTO KIYOHISA , SAGAWA MISUZU , TSUCHIYA TOMONOBU
IPC分类号： H01L29/06 , H01S5/00 , H01S3/18
摘要： PURPOSE:To provide a surface emission semiconductor laser having a strained quantum well active layer of low element resistance and excellent crystallizability. CONSTITUTION:A multilayer structure, in which an active layer 4 is pinched by an n-type semiconductor multilayer film reflecting mirror 2 whereon an n-type InGaP layer and an n-type GaAs layer are alternately formed and a p-type semiconductor multilayer film reflecting mirror 6, whereon a p-type InGaP layer and a p-type GaAs layer are alternately formed, is arranged on an n-type GaAs substrate 1, and an InGaAsP layer having an inhibit band width, which is an intermediate on of an InGaP forbidden band width and GaAs inhibit band width, is provided in the surface emission semiconductor laser. A dielectric multilayer film reflecting mirror may be used as one of the semiconductor multilayer reflecting mirrors.

7. 发明专利

JPH07263812A SEMICONDUCTOR LASER DEVICE 失效
公开(公告)号：JPH07263812A
公开(公告)日：1995-10-13
申请号：JP5542194
申请日：1994-03-25
申请人： HITACHI LTD
发明人： SAGAWA MISUZU , TOYONAKA TAKASHI , HIRAMOTO KIYOHISA , SHINODA KAZUNORI , TSUCHIYA TOMONOBU
IPC分类号： H01L29/06 , H01S5/00 , H01S3/18
摘要： PURPOSE:To realize a high output without increasing a drive current by forming an active layer of a barrier layer of composition of a specific element adjacent to a quantum well. CONSTITUTION:A ridge which is formed of a GaAs buffer layer 2 formed in sequence on an n-GaAs substrate 1, an n-InGaP clad layer 3 with lattice matched to the substrate 1, a distortion quantum well active layer 4, a p-InGaP clad layer 5 with lattice matched to the substrate l, a p-GaAs layer 6, a p-InGaP clad layer 7 with lattice matched to GaAs and a p-GaAs gap layer, is buried into an n-InGaP current constriction layer 9. The active layer of this semiconductor laser device in which the wavelength of a laser beam is within the range of 0.9 to 1.1mum, is constituted of a quantum well layer composed of InGaAs of at least one layer and In(1-x)Ga(x)As(y)P(1-y) barrier layer of at least one layer, and x is not less than 0. 5 and y is not less than 0.3.

8. 发明专利

JPH07245448A SEMICONDUCTOR LASER 失效
公开(公告)号：JPH07245448A
公开(公告)日：1995-09-19
申请号：JP3557294
申请日：1994-03-07
申请人： HITACHI LTD
发明人： KOMORI MASAAKI , TSUCHIYA TOMONOBU , OKA SATOHIKO , OISHI AKIO , UOMI KAZUHISA
IPC分类号： H01S5/00 , H01S3/18
摘要： PURPOSE:To obtain a long wavelength band semiconductor laser which is oscillated by a low threshold current in high slope efficiency by a method wherein an active layer is formed in a multiple distortion quantum well structure, and the amount of distortion of a barrier layer and the film thickness of the distortion quantum well layer are set in a specific range of numeral value. CONSTITUTION:An active layer 3 is formed in multiple distortion quantum well structure, the grating constant of a distortion quantum well layer is set at (as), and when the amount of distortion DELTAaw/a of the distortion quantum well layer is defined as (aw-as)/as, the DELTAaw/a is set as +1.2%

9. 发明专利

JP2014032029A Scintillator and radiation detecting device using the same 有权
标题翻译：使用相同的扫描仪和辐射检测装置
公开(公告)号：JP2014032029A
公开(公告)日：2014-02-20
申请号：JP2012170928
申请日：2012-08-01
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： IMAMURA SHIN , NOBUKI SHUNICHIRO , OSHIMA TAKU , TSUCHIYA TOMONOBU
IPC分类号： G01T1/20 , A61B6/03 , C09K11/00 , C09K11/80 , C09K11/84 , G21K4/00
摘要： PROBLEM TO BE SOLVED: To provide a radiation detecting device having excellent characteristics which efficiently extracts light held in scintillators to increase light output of the scintillators.SOLUTION: A scintillator which emits light by radiation incidence comprises a layer of which refractive index is lower than the scintillator on a surface of light emission part of the scintillator, and the layer includes particles having predetermined particle diameters that are composed of material having the different refractive index from the layer. A radiation detecting device uses the scintillators having such structure.
摘要翻译：要解决的问题：提供一种具有优异特性的放射线检测装置，其有效地提取闪烁体中保持的光以增加闪烁体的光输出。解决方案：通过辐射入射发射光的闪烁体包括折射率低于闪烁体的发光部分的表面上的闪烁体，并且该层包括由具有与该层不同的折射率的材料构成的具有预定粒径的颗粒。辐射检测装置使用具有这种结构的闪烁体。

10. 发明专利

JP2008186902A OPTICAL SEMICONDUCTOR ELEMENT AND MANUFACTURING METHOD THEREFOR 审中-公开
公开(公告)号：JP2008186902A
公开(公告)日：2008-08-14
申请号：JP2007017693
申请日：2007-01-29
申请人： HITACHI LTD
发明人： KITATANI TAKESHI , TSUCHIYA TOMONOBU
IPC分类号： H01S5/026 , G02F1/015
摘要： PROBLEM TO BE SOLVED: To provide an integrated optical semiconductor element that has proper element characteristics by suppressing failures of an InGaAsP waveguide layer that is formed by regrowing, and to provide its manufacturing method. SOLUTION: The lattice misfitting ε of an InGaAsP layer to an InP substrate is set to be within a range of +0.1%≤ε≤+0.4%. COPYRIGHT: (C)2008,JPO&INPIT

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