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    • 1. 发明专利
    • SEMICONDUCTOR OPTICAL DEVICE
    • JP2001053387A
    • 2001-02-23
    • JP22618399
    • 1999-08-10
    • HITACHI LTD
    • KOMORI MASAAKIAOKI MASAHIROOYA AKIRATSUCHIYA TOMONOBUUOMI KAZUHISA
    • H01S5/34
    • PROBLEM TO BE SOLVED: To manufacture a high-output and high-reliability integrated semiconductor optical device having a high yield by including, in the optical device, a distorted quantum well structure made by alternately stacking distorted quantum well layers, having a specified compressive strain and barrier layers by several cycles. SOLUTION: On an n-type InP substrate 1, an n-type InP buffer layer 2 and an n-type InGaAsP lower guide layer 3 are grown. Then, SiO2 ions are implanted only to a laser region 4. This semiconductor basic substance is annealed to form a diffraction grating section as an optical feedback means 50 for semiconductor laser sections. Next, InGaAsP barrier layers and InGaAsP distorted quantum well layers are stacked alternately in six cycles to form a distorted multiple quantum well waveguide structure 5 of a six-cycle structure, and then an InGaASP upper guide layer 6 is grown. Then, an un-InP cap layer is grown, SiO2 is evaporated and then phosphorus ions are implanted to form the laser region 4, a modulator region 7, and a semi-insulating region 8. Thereafter, a p-type InP clad layer 9 is grown and an electrical insulation 10 and electrodes 11, 60 are formed, and then integrated semiconductor optical device which can be made high in output and in reliability is formed.
    • 5. 发明专利
    • SEMICONDUCTOR LASER
    • JPH0832173A
    • 1996-02-02
    • JP16767394
    • 1994-07-20
    • HITACHI LTD
    • TOYONAKA TAKASHISAGAWA MISUZUHIRAMOTO KIYOHISATSUCHIYA TOMONOBUSHINODA KAZUNORI
    • H01S5/00H01S3/18
    • PURPOSE:To ensure high-optical-output and stable single transverse mode oscillation by making the effective refractive index of a stripe part larger than the effective refractive indexes of both side parts of the stripe by a prescribed value, in a semiconductor laser which has an InGaAs quantum well active layer and a clad layer. CONSTITUTION:A buffer layer 2, whose lattice matches with that of an n-type GaAs substrate 1, a clad layer 3, and a quantum well active layer 8 composed of a quantum well layer 16, two barrier layers 15 and 17 sandwiching this, and two SCH layers 14 and 18 are formed, and thereon, a clad layer 5, a light waveguide layer 6, a clad layer 7, a buffer layer 8, and a cap layer 9 are grown in order. Next, this semiconductor laser is etched to the middle of the clad layer, through the cap layer 9 and the buffer layer 8. Next, the light waveguide layer 6 is removed, and a current constricting layer 10 is stopped, and a contact layer 11 is grown. P-side and n-side electrodes 12 and 13 are deposited, thus a semiconductor laser where the resonator is 900mum long is manufactured by cleavage method. Hereby, single transverse oscillation mode being stable even with high optical output is maintained.