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1. 发明专利

JP2001053387A SEMICONDUCTOR OPTICAL DEVICE 失效
公开(公告)号：JP2001053387A
公开(公告)日：2001-02-23
申请号：JP22618399
申请日：1999-08-10
申请人： HITACHI LTD
发明人： KOMORI MASAAKI , AOKI MASAHIRO , OYA AKIRA , TSUCHIYA TOMONOBU , UOMI KAZUHISA
IPC分类号： H01S5/34
摘要： PROBLEM TO BE SOLVED: To manufacture a high-output and high-reliability integrated semiconductor optical device having a high yield by including, in the optical device, a distorted quantum well structure made by alternately stacking distorted quantum well layers, having a specified compressive strain and barrier layers by several cycles. SOLUTION: On an n-type InP substrate 1, an n-type InP buffer layer 2 and an n-type InGaAsP lower guide layer 3 are grown. Then, SiO2 ions are implanted only to a laser region 4. This semiconductor basic substance is annealed to form a diffraction grating section as an optical feedback means 50 for semiconductor laser sections. Next, InGaAsP barrier layers and InGaAsP distorted quantum well layers are stacked alternately in six cycles to form a distorted multiple quantum well waveguide structure 5 of a six-cycle structure, and then an InGaASP upper guide layer 6 is grown. Then, an un-InP cap layer is grown, SiO2 is evaporated and then phosphorus ions are implanted to form the laser region 4, a modulator region 7, and a semi-insulating region 8. Thereafter, a p-type InP clad layer 9 is grown and an electrical insulation 10 and electrodes 11, 60 are formed, and then integrated semiconductor optical device which can be made high in output and in reliability is formed.

2. 发明专利

JPH07297207A CRYSTAL GROWTH METHOD 失效
公开(公告)号：JPH07297207A
公开(公告)日：1995-11-10
申请号：JP8128294
申请日：1994-04-20
申请人： HITACHI LTD
发明人： MOMOSE MASAYUKI , KAWADA MASAHIKO , OYA AKIRA
IPC分类号： H01L21/20 , H01L21/363 , H01S5/00 , H01S3/18
摘要： PURPOSE:To realize high concentration p-type doping of a II-VI compound semiconductor or continuous variation of a composition of a mixed crystal system. CONSTITUTION:When a II-VI compound semiconductor is produced, composition control is carried out by casting light having a wavelength corresponding to an energy exciting raw atom or molecule of an element from a basic state to an excitation state or a wavelength of one-n (n>=2) thereof. Thereby, performance of a dark green semiconductor laser can be improved.

3. 发明专利

JPH04106986A N-TYPE SEMICONDUCTOR FILM, MANUFACTURE THEREOF AND SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH04106986A
公开(公告)日：1992-04-08
申请号：JP22251090
申请日：1990-08-27
申请人： HITACHI LTD
发明人： UDA MASAHITO , OYA AKIRA
IPC分类号： H01L21/203 , H01L21/363 , H01L33/28 , H01L33/30
摘要： PURPOSE:To reduce defects in a crystal and to provide excellent electric characteristics by providing a special specific resistance with special composition. CONSTITUTION:In an n-type semiconductor film represented by a formula ZnSxSel-x (where x is a value in the range of 0 $ x cm to 1X10 cm at the ambient temperature, the n-type film has a specific resistance of 8.3X10 OMEGAcm or less. In an n-type semiconductor film having carrier concentration of 1X10 cm to 1X10 cm at the ambient temperature, the n-type film has 1.0X10 OMEGAcm or less and carrier concentration in the range of 1X10 cm to 1X10 cm . The n-type film may has specific resistance of 1.2X10 OMEGAcm or less.

4. 发明专利

JPH0210788A COMPOUND SEMICONDUCTOR LIGHT EMITTING ELEMENT 失效
公开(公告)号：JPH0210788A
公开(公告)日：1990-01-16
申请号：JP15941388
申请日：1988-06-29
申请人： HITACHI LTD
发明人： UDA MASAHITO , OYA AKIRA , SHIIKI MASATOSHI
IPC分类号： H01L21/365 , H01L31/0264 , H01L33/06 , H01L33/12 , H01L33/28 , H01L33/30 , H01L33/40 , H01S5/00
摘要： PURPOSE:To obtain an element with the desired light emitting wavelength by forming a distorted superlattice structure in such a way that II-VI compound semiconductor layers are epitaxially formed in plural numbers alternately with each other, and doping the semiconductor with impurity element which is given a conductivity type. CONSTITUTION:A buffer layer 5 is accumulated on the surface of a GaAs substrate 4, and then group VI material and group II material are made to grow alternately by ten layers for each so as to from a distorted superlattice structure. Next, by ion implantation using an SiO2 mask 9, to a p type region 2 nitrogen ions N 10 and to an n type region 3 iodine ions are implanted, respectively. Hereby, in the p-n region, undoped region 1 is formed at the interface. A light exit face 11 is covered with a mask, and accoring to the conductivity type of each end face, an n-type GaAs 6 and a p-type GaAs 7 are formed respectively by the MOCVD method, and orhmic electrodes 8 and 8' are formed respectively so as to complete the element structure. Further, the electrode 8 is made of InZn, and 8' is made of InSn. Hereby, carrier implantation type high efficiency visual light emitting element can be realized.

5. 发明专利

JP2009105458A Optical semiconductor device 有权
标题翻译：光学半导体器件
公开(公告)号：JP2009105458A
公开(公告)日：2009-05-14
申请号：JP2009029301
申请日：2009-02-12
申请人： Hitachi Ltd , Opnext Japan Inc , 日本オプネクスト株式会社 , 株式会社日立製作所
发明人： NAKAHARA KOJI , TSUCHIYA TOMONOBU , OYA AKIRA , SHINODA KAZUNORI
IPC分类号： H01S5/12 , H01S5/22 , H01S5/343
摘要： PROBLEM TO BE SOLVED: To solve a problem wherein laser characteristics are degraded especially at a high temperature since element resistance is high in a DFB laser having an InGaAlAs active layer.
SOLUTION: On an InGaAlAs-MQW layer 104 formed on an n-type InP substrate 101, a p-type InGaAlAs-GRIN-SCH layer 105, a p-type InAlAs electron stop layer 106, and a p-type diffraction grating layer 107 are layered in this order. After forming a diffraction grating, a p-type InP clad layer 108 and a p-type InGaAs contact layer are regrown sequentially, to fabricate a ridge laser. The depth of the unevenness of the diffraction grating in the p-type diffraction grating layer 107 is smaller than the thickness of the layer 107.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：解决的问题为了解决具有InGaAlAs活性层的DFB激光器的元件电阻高时特别是在高温下激光特性劣化的问题。解决方案：在n型InP衬底101上形成的InGaAlAs-MQW层104，p型InGaAlAs-GRIN-SCH层105，p型InAlAs电子阻挡层106和p型衍射光栅层107依次层叠。在形成衍射光栅之后，依次重新生长p型InP包层108和p型InGaAs接触层，以制造脊状激光。 p型衍射光栅层107中的衍射光栅的不均匀度的深度小于层107的厚度。（C）2009，JPO＆INPIT

6. 发明专利

JP2002324936A OPTICAL ELEMENT, WAVEGUIDE OPTICAL ELEMENT, AND OPTICAL MODULE 失效
公开(公告)号：JP2002324936A
公开(公告)日：2002-11-08
申请号：JP2001129178
申请日：2001-04-26
申请人： HITACHI LTD
发明人： SATO HIROSHI , OYA AKIRA , SHINODA KAZUNORI , TSUJI SHINJI
IPC分类号： G02F1/017 , G02B6/12 , G02B6/122 , G02B6/34 , G02B6/42 , H01S5/022 , H01S5/026 , H01S5/12
摘要： PROBLEM TO BE SOLVED: To provide an optical transmission device which is suitable to, specially, a high-speed and large-capacity optical transmission system. SOLUTION: An optical waveguide optical element is constituted by laminating clad layers, having larger band gaps than an optical waveguide layer formed on a semiconductor substrate, on both sides of the optical waveguide layer and an optical waveguide in quantum wall structure has plural kinds of laminate structures in the light propagation direction of the optical waveguide layer; and the quantum well structures are different in layer structure or constitution material from one another, an optical waveguide made of a bulk crystal is present at the connection parts of the quantum well structure waveguides having different structures, and the quantum effect is very small in the bulk crystal.

7. 发明专利

JP2001144377A SEMICONDUCTOR OPTICAL ELEMENT 失效
公开(公告)号：JP2001144377A
公开(公告)日：2001-05-25
申请号：JP32226499
申请日：1999-11-12
申请人： HITACHI LTD
发明人： TSUCHIYA TOMONOBU , OYA AKIRA , KOMORI MASAAKI , TAKEMOTO DAISAKU
IPC分类号： G02F1/035 , H01L33/06 , H01L33/12 , H01L33/30 , H01S5/026 , H01S5/323 , H01L33/00
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor optical element which is provided on a non-semiconductor substrate, has a light emitting wavelength of 1 μm or more and has good crystallization. SOLUTION: A semiconductor laser 10 including at least one type of group-III element selected from the group of In, Ga and Al and at least one type of group-V element selected from the group of As and P is provided on a non- semiconductor substrate such as an LiNbO3 single-crystal substrate 1, and a buffer layer including at least one type of group-III element selected from the group of In, Ga, Al and Tl and also including N or O is provided between the non-semiconductor substrate and the semiconductor laser 10.

8. 发明专利

JP2000312051A SEMICONDUCTOR LASER 失效
公开(公告)号：JP2000312051A
公开(公告)日：2000-11-07
申请号：JP12085399
申请日：1999-04-28
申请人： HITACHI LTD
发明人： NAKAHARA KOJI , OYA AKIRA , TSUCHIYA TOMONOBU , HAGA TORU
IPC分类号： H01L33/06 , H01L33/14 , H01L33/32 , H01S5/00 , H01S5/22 , H01S5/323 , H01S5/343
摘要： PROBLEM TO BE SOLVED: To provide a novel semiconductor laser which can reduce threshold current with a low cost by effectively suppressing the diffusion of an injecting current in a horizontal direction. SOLUTION: An active layer 1, a light confinement layer and a reflection structure for initiating laser oscillation are formed on a substrate 5, the upper light confinement layer is made a ridge structure, a part of a compound semiconductor on the substrate 5 is made as a semi-insulating layer through impurity diffusion, and the region of the active layer 1 is set to be positioned directly under the ridge structure. Additionally, an active layer 1, a light confinement layer, and a reflection structure for initiating laser oscillation are formed on the substrate 5, the upper and lower reflection structures having the active layer 1 disposed pinchingly therebetween to form a multilayered reflecting mirror, the upper multilayered reflecting mirror is made to have a projected structure whose top surface is parallel to the substrate surface, a part of a compound semiconductor on the substrate 5 is formed as a semi-insulating layer through impurity diffusion, and the region of the active layer 1 is set directly under the upper multilayered reflecting mirror.

9. 发明专利

JP2000100728A CRYSTAL GROWTH EQUIPMENT 失效
公开(公告)号：JP2000100728A
公开(公告)日：2000-04-07
申请号：JP26428098
申请日：1998-09-18
申请人： HITACHI LTD
发明人： KOMORI MASAAKI , OYA AKIRA , AOKI MASAHIRO , SATO HIROSHI , TSUCHIYA TOMONOBU
IPC分类号： H01L21/205 , H01S5/00 , H01S5/343
摘要： PROBLEM TO BE SOLVED: To realize growth technique of a strained multiple-quantum well waveguide layer having a desired light emission wavelength distribution, and to obtain growth equipment advantageous to cost reduction of a semiconductor optical element by locally controlling a growth atmosphere and avoiding the problem of unnuniformity of the growth atmosphere. SOLUTION: In an organic metal vapor growth method, a strained multiple quantum well structure, constituted of a strained quantum well layer 14 composed of multiple mixed crystal and a barrier layer 13, is grown. In this case, a substrate surface is irradiated with gas different in the flow rate, or partly irradiated with a heat ray having intensity distribution, when growth of the quantum well layer 14 and the barrier layer 13 is interrupted. The light emission wavelength in a growth surface is controlled and the wavelength of a large area substrate is made uniform, or a waveguide layer having a plurality of required wavelengths is formed in one growing.

10. 发明专利

JP2000066046A LIGHT TRANSMISSION DEVICE 失效
公开(公告)号：JP2000066046A
公开(公告)日：2000-03-03
申请号：JP23524698
申请日：1998-08-21
申请人： HITACHI LTD
发明人： SATO HIROSHI , AOKI MASAHIRO , SUDO TSUTOMU , OYA AKIRA , TSUCHIYA TOMONOBU , KOMORI MASAAKI , UOMI KAZUHISA
IPC分类号： G02B6/122 , H01S5/00 , H01S5/022 , H01S5/10 , H01S5/12 , H04B10/2507 , H04B10/40 , H04B10/50 , H04B10/60 , H01S5/30 , H04B10/02 , H04B10/28
摘要： PROBLEM TO BE SOLVED: To provide a light transmission device with a large optical output, suitable for a high speed and a large capacity optical transmission system also excellent in an antireflection characteristic. SOLUTION: This light transmission device has a waveguide-type optical element emitting light, a light transmission path optically coupled to this waveguide-type optical device, and a waveguide-type optical element is composed of a light-emitting part having at least partly in it a gain coupling type diffraction grating 54, and a mode converting region integral therewith. In such a manner, it is possible to provide a light transmission system excellent in reflection returning light resistance while maintaining an optical coupling between the emitting part and the light transmission path with high efficiency. Moreover, the light transmission member realizes an optical transmission device suitable for a high speed and a large capacity optical transmission system with such a high efficiency optical coupling and excellent in a reflection resistant characteristic.

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