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1. 发明专利

JPH1154806A PELTIER COOLER AND OPTICAL ELEMENT MODULE 失效
公开(公告)号：JPH1154806A
公开(公告)日：1999-02-26
申请号：JP20881897
申请日：1997-08-04
申请人： HITACHI LTD
发明人： KUWANO HIDEYUKI , OISHI AKIO
IPC分类号： G02B6/42 , H01L35/32 , H01S3/04 , H01S5/00 , H01S5/024 , H01S3/18
摘要： PROBLEM TO BE SOLVED: To wire the inside of the package of a Peltier cooler with a single process by providing an electrode for supplying current on the low or high temperature-side surface of the Peltier cooler, incorporating the Peltier cooler in an optical element module, and then wiring the package by wire bonding. SOLUTION: After a laser diode 4, a lens 5, a thermistor 6, and a photodiode 3 have been mounted on a subcarrier 2, the subcarrier 2 is fixed to the low- temperature substrate 11 of a Peltier cooler 9. Then, the cooler 9 is housed in a package 1, and a high-temperature substrate 10 of the cooler 9 is fixed to the bottom of the package 1. In addition, a negative electrode 12 and a positive electrode 13 are connected in series with a Peltier element via through- holes 14. Moreover, the electrodes of the laser diode 4, the thermistor 6, and the photodiode 3 and the electrodes 12 and 13 of the cooler 9 are connected to the wiring pattern of a package-connecting substrate 8 through Au wires 7. Therefore, the internal wiring of the package 1 can be performed with a single process.

2. 发明专利

JPH02240988A SEMICONDUCTOR LASER 失效
公开(公告)号：JPH02240988A
公开(公告)日：1990-09-25
申请号：JP6096989
申请日：1989-03-15
申请人： HITACHI LTD
发明人： KAJIMURA TAKASHI , TANAKA TOSHIAKI , OISHI AKIO , KONDO MASAHIKO
IPC分类号： H01S5/00
摘要： PURPOSE:To contrive decrease in a series resistance and improvement in temperature characteristics and perform high output operation at a high temperature by using a p-type substrate that is made up by layers which contain a highly concentrated p-type impurities on a part or the whole surface of a substrate crystal. CONSTITUTION:Zn is diffused on the surface of a p-type GaAs substrate 1 and a p-type impurity highly concentrated layer 2 is formed. After that, a p-type Al0.25Ga0.25In0.5P clad layer 3, an In0.5Ga0.5P active layer 4, an n-type Al0.25Ga0.25 In0.5P clad layer 5, and an N-type GaAs cap layer 6 are formed by MOCVD. Subsequently, an SiO2 film 7 having a stripe groove is formed through photolithography and CVD processes. After forming an n-type electrode 8, a p-type electrode 9 is formed and laser chips are obtained by cleaving this member. Consequently, a p-type impurity concentration in a p-type clad layer of an AlInGaP system 0.6mum band laser is allowed to be highly concentrated easily after producing favorable control effect. Decrease in a series resistance as well as the overflow of injected carriers into a p-type clad layer 5 is achieved and high output operation of a laser at a high temperature is thus performed.

3. 发明专利

JPH02181985A SEMICONDUCTOR LASER 失效
公开(公告)号：JPH02181985A
公开(公告)日：1990-07-16
申请号：JP131189
申请日：1989-01-09
申请人： HITACHI LTD
发明人： MINAGAWA SHIGEKAZU , KONDO MASAHIKO , TANAKA TOSHIAKI , OISHI AKIO , SAITO KATSUTOSHI
IPC分类号： H01S5/00
摘要： PURPOSE:To sharply improve the continuous oscillation temperature of a semiconductor laser by forming a double heterostructure body consisting of a mixed crystal of AlGaInP on a p-type GaAs substrate in the order of a p-type light guide layer, active layer, and n-type light guide layer and, it the same time, a current constriction means so as to limit the current area injected into the n-type light guide layer. CONSTITUTION:A p-GaInP layer 32, p-AlGaInP layer 33, GaInP active layer 34, n-AlGaInP layer 35, n-GaAs surface protective layer 36 are successively grown epitaxially on a p-type GaAs 100 substrate crystal 31. After forming the layers 32-36, a photoresist layer 37 (6mum in width and 4mum in thickness) is formed on the wafer and boron ions 38 are implanted under an acceleration voltage of 250KeV in an implanting density of 1X10 pieces/cm . After implantation, the layer 37 is removed and an n-GaAs layer 40 is further formed on the protective layer 36, so as to obtain a wafer for gain waveguide type semiconductor laser containing an electric current blocking layer 39 insulated by the ion implantation.

4. 发明专利

JPH01309393A SEMICONDUCTOR LASER DEVICE AND ITS MANUFACTURE 失效
公开(公告)号：JPH01309393A
公开(公告)日：1989-12-13
申请号：JP13939088
申请日：1988-06-08
申请人： HITACHI LTD
发明人： OTOSHI SO , OISHI AKIO , UOMI KAZUHISA , YAMAGUCHI KEN
IPC分类号： H01S5/00
摘要： PURPOSE:To obtain a semiconductor laser whose efficiency is high and whose high-temperature characteristic is excellent by a method wherein a stepped part is formed at a side part of a mesa and is filled and a position of a P-N interface of a buried layer is aligned with the stepped part with good controllability. CONSTITUTION:A light guide layer 2, an active layer 3, an antimeltback layer 4, a clad layer 5 and a cap layer are grown one after another on a substrate 1 by a liquid growth method. The surface of the substrate 1 is etched by using an etching liquid by making use of a photoresist as a mask; a mesa with a stripe width of 1mum is formed. About 0.1mum of only InP in a mesa part 1a of the substrate 1 and in the clad layer 5 is etched selectively; a stepped part is formed at a boundary between the antimeltback layer 4 and the clad layer 5. Buried layers 7 and 8 are formed by using a liquid growth method. A contact hole is bored; after that, Zn is diffused selectively; a Zn diffusion region 9 is formed. A P-type electrode 11 and an N-type electrode 12 are formed by using an evaporation method. By this setup, a semiconductor laser whose efficiency is high and whose high-temperature characteristic is excellent can be obtained.

5. 发明专利

JPS63221691A SEMICONDUCTOR LASER DEVICE 失效
公开(公告)号：JPS63221691A
公开(公告)日：1988-09-14
申请号：JP5401487
申请日：1987-03-11
申请人： HITACHI LTD
发明人： YOSHIZAWA MISUZU , YAMASHITA SHIGEO , OISHI AKIO , KAJIMURA TAKASHI
IPC分类号： H01S5/00
摘要： PURPOSE:To improve the reliability of a semiconductor laser device and to improve the yield of an element by reducing the aluminum molar ratio of a semiconductor which forms the clad layer in the bottom of a stripe smaller than that of a semiconductor which forms the other clad layer. CONSTITUTION:An N-type clad layer 2, an active layer 3, a P-type clad layer 4, and an N-type GaAs current narrowing layer 5 are sequentially formed on a substrate crystal 1. Thereafter, the layer 5 is removed to form a groove stripe having 1-15mum of width exposed on the layer 4. Then, a P-type buried clad layer 6, and a P-type cap layer 7 are formed. The aluminum molar ratio of the P-type GaAlAs clad layer exposed at the time of forming the groove stripe is reduced smaller than that of the N-type GaAs clad layer to eliminate the oxide on the exposed surface in the atmosphere at the time of forming the stripe. Accordingly, the oxide is not formed to obtain high yield and high reliability.

6. 发明专利

JPS63108788A OPTICAL INTEGRATED CIRCUIT 失效
公开(公告)号：JPS63108788A
公开(公告)日：1988-05-13
申请号：JP25382086
申请日：1986-10-27
申请人： HITACHI LTD , HITACHI CABLE
发明人： MATSUMURA HIROYOSHI , SAKANO SHINJI , TSUJI SHINJI , OISHI AKIO , INOUE HIROAKI , HIRAO MOTONAO
IPC分类号： G02B6/12 , G02B6/42 , H01S5/00
摘要： PURPOSE:To obstruct reflected return beams while stabilizing a laser output and a wavelength by forming a tapered optical guide between a semiconductor laser and the optical guide. CONSTITUTION:An optical integrated circuit is constituted of a semiconductor laser region A and an optical guide region B, an optical guide 1 for a semiconductor laser is shaped in the region A, and a tapered optical guide 2 is formed in the region B. Beams projected by the taper of the optical guide 2 are condensed gradually and changed into an original single mode, and projected to another optcal element, and the single mode reversely reflected from the optical element and being returning is turned slowly into another mode, and mismatched to the waveguide 1, and the projection of a return wave is hindered. A rotational grating 4 is shaped to a section corresponding to the laser section A on the InP substrate 1 for a distributed feedback type semiconductor laser by the irradiation of electron beams, and laser structure having an active layer 5 is formed through an LPE method. A crystal in the tapered optical guide section B is gotten rid of, and the crystal structure of the tapered optical guide 2 is formed through selective epitaxial growth.

7. 发明专利

JPS62159485A SEMICONDUCTOR LASER DEVICE 失效
公开(公告)号：JPS62159485A
公开(公告)日：1987-07-15
申请号：JP55686
申请日：1986-01-08
申请人： HITACHI LTD
发明人： KURODA TAKARO , TSUJI SHINJI , OISHI AKIO , NAKAMURA HITOSHI , MATSUMURA HIROYOSHI
IPC分类号： H01L21/265 , H01S5/00
摘要： PURPOSE:To easily manufacture the devices with high yield and to relatively prolong the life of elements by implanting ions obliquely twice from the right and left upper positions so as to form a current constriction part having an implantation exciting width which is half a mask width or less. CONSTITUTION:On an InP substrate 5, an InP cladding layer 4, an InGaAsP active layer 3, and an InP cladding layer 2 are grown in order by gas-phase growth and a stripe-form mask 7 is formed on them. The width of the mask 7 is determined to be 2-3 times an exciting width of the active layer 3 which is 1mum, for example. The exposed part on the side of the stripe is 2-5mum. From the upper positions of this stripe, ion implantation is done once respective ly from the right and left positions with a slant of about 45 deg.. The ion species is one that forms a P-N junction between it and the cladding layer 2 and the front end of an ion implantation layer after annealing is stopped just before the active layer 3.

8. 发明专利

JPS6295814A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS6295814A
公开(公告)日：1987-05-02
申请号：JP23514385
申请日：1985-10-23
申请人： HITACHI LTD
发明人： KURODA TAKARO , WATANABE AKISADA , TSUJI SHINJI , OISHI AKIO , MATSUMURA HIROYOSHI
IPC分类号： H01S5/00 , C30B29/40 , H01L21/20 , H01L21/205
摘要： PURPOSE:To suppress the generation of a misfit dislocation by a method wherein an average composition mixed crystal is formed by regulating the composition and the thickness of each multi-element mixed crystal layer on which the original superlattice structure is formed. CONSTITUTION:A superlattice structure consisting of lattice-matched multi- element mixed crystal is formed on substrate crystal using the hetero crystal of a compound semiconductor. A part of the superlattice structure is formed into the uniform average composition mixed crystal by performing an annealing after conducting diffusion of the impurities such s Zn, Si and the like or by performing an ion-implantation. At this time, an average composition mixed crystal is formed by regulating the composition and the thickness of the multi- element mixed crystal layer with which the original super-lattice structure is formed. As a result, the generation of misfit dislocation can be suppressed.

9. 发明专利

JPS61214589A SEMICONDUCTOR LASER DEVICE 失效
公开(公告)号：JPS61214589A
公开(公告)日：1986-09-24
申请号：JP5442085
申请日：1985-03-20
申请人： HITACHI LTD
发明人： OKAI MAKOTO , TSUJI SHINJI , NAKAMURA HITOSHI , SAKANO SHINJI , MATSUMURA HIROYOSHI , OISHI AKIO , HIRAO MOTONAO , KAYANE NAOKI
IPC分类号： H01S5/00 , H01S5/12
摘要： PURPOSE:To obtain a semiconductor laser device which realizes a steady single longitudinal mode operation even in the modulation period by a method wherein two or more domains with different refractive indices are provided along the axial direction of a resonator of a DFB laser and the axial widths of those domains are varied from the center to the edge of te resonator. CONSTITUTION:A resist is applied on the whole surface of an N-type InP substrate 1 and grooves 10 are formed by photolithography or RIE. Distances between the adjacent grooves 10 are varied along the axial direction of a resonator from the center to the edge to provide an effective refractive index distribution. An N-type InGaAs guide layer 2, an InGaAsP activation layer 3 and a P-type InGaAsP buffer layer 4 are formed by MO-CVD. A resist is applied on the layer 4 and a grating 9 is formed by laser interference exposure. A P-type InP layer 5 and a P-type InGaAsP surface layer 6 are formed on the grating 9 and a P-type electrode 7 and an N-type electrode 8 are formed on the top and the bottom surfaces respectively. A semiconductor laser can be obtained by cleaving.

10. 发明专利

JPS63197391A SEMICONDUCTOR LASER DEVICE 失效
公开(公告)号：JPS63197391A
公开(公告)日：1988-08-16
申请号：JP2820787
申请日：1987-02-12
申请人： HITACHI LTD
发明人： KONDO MASAHIKO , SATO MAKOTO , MINAGAWA SHIGEKAZU , OISHI AKIO , KAJIMURA TAKASHI
IPC分类号： H01L21/205 , H01S5/00 , H01S5/34 , H01S5/343
摘要： PURPOSE:To make laser oscillation possible in the range from infrared ray to green ray, by applying a strain superlattice layer, wherein a plurality of InGaAlPAs layers having different lattice constants are alternately grown in a limited layer thickness, to an active layer. CONSTITUTION:A semiconductor laser element comprises a GaP substrate 1, a GaP buffer layer 2, an AlP clad layer 3, a strain superlattice active layer 4 in which four layers of 10Angstrom thick AlP and In0.7Al0.2P are grown, and a GaP cap layer 5. The active layer 4 is a strain superlattice of InGaAlPAs system composed of a plurality of thin layers having different compositions generally shown by the following; In1-x-yGaxAlyP1-zAsz (0

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