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    • 4. 发明专利
    • ION SOURCE DEVICE
    • JPS61288348A
    • 1986-12-18
    • JP12984785
    • 1985-06-17
    • HITACHI LTD
    • SATO TADASHIONO YASUNORIKUROSAWA TOMOESEKIMOTO SHINYA
    • H01J27/08
    • PURPOSE:To prevent discharge from becoming unstable, by providing an anode member inside the inner circumferential surface of a plasma generation container which also serves as an anode and is fitted with a plurality of permanent magnets on the outer circumferential surface of the container, to keep the anode member at a high temperature to prevent a high-molecular product from clinging thereto. CONSTITUTION:A cylindrical plasma generation container 2A, which also serves as an anode and is fitted with permanent magnets 7A on the outer circumferential surface of the container, and a lid 2B, which is provided with an inlet port 1 for introducing a gas including a CF4 gas or the like and is fitted with a cathode 3 made of a hairpin-shaped tungsten filament, are combined with each other to constitute an ion source device. A cylindrical anode member 4 made of stainless steel or the like is spot-welded to a magnetic member 9, which is held on the inner circumferential surface of the container 2A by the attractive forces of the permanent magnets 7A. As a result, the anode member 4 can be caused to act at a high temperature so that an electrically-insulating high-molecular substance produced by discharge is prevented from clinging to the anode member. The discharge can thus be stabilized.
    • 6. 发明专利
    • PROCESSING EQUIPMENT BY ION BEAM
    • JPH0883834A
    • 1996-03-26
    • JP24339694
    • 1994-09-12
    • HITACHI LTD
    • OISHI SEITAROSEKIMOTO SHINYA
    • C23C14/50C23F4/00H01J37/08H01J37/305H01L21/203H01L21/302H01L21/3065H01L21/31H01L21/68H01L21/683
    • PURPOSE: To improve processing precision and cooling performance for a sample and to make high a throughput of processing equipment by making the size of a sample holder be the same substantially as the bore diameter of an ion source and by disposing it in a plurality of arrays at the inner and outer circumferences thereof. CONSTITUTION: A diameter of setting of a sample holder is made the same substantially as the one of an ion source of a large bore diameter and a sample holder 10 on the outer circumference side and a sample holder 20 on the inner circumference side are provided over the whole of an ion beam irradiation plane at the inner and outer circumferences thereof. Thereby ion beams emitted can be used at the maximum. In order to cool down a sample 21 subjected to irradiation by the ion beams, cooling water is supplied to the sample holders 10 and 20 from a cooling water inlet-outlet joint 43 through cooling pipings 44 in directions of arrows. In this way, the sample 21 is cooled down directly by supplying the cooling water even onto the rear sides of the sample holders 10 and 20. According to this constitution, it is possible to improve a cooling characteristic and processing precision (of uniformity and a processed shape) and to attain a high throughput.
    • 8. 发明专利
    • EDGED ELECTRODE
    • JPS61267237A
    • 1986-11-26
    • JP10819285
    • 1985-05-22
    • HITACHI LTD
    • SEKIMOTO SHINYA
    • G01N27/62H01J27/02
    • PURPOSE:To lengthen the insulation of spacer by grinding the electrode and the edge integrally. CONSTITUTION:The electrode and the edge are machined integrally. The plasma chamber 1 is provided with a current lead-in terminal 3 for leading the filament current and heating the filament 2 and a gas lead-in port 4. Ion acceleration electrode 5, deceleration electrode 6 and grounding electrode 7 are secured to the electrode support metal 9 while maintaining gaps through insulation spacers 8 made of ceramics, for example. The portion of respective electrode for accelerating the ions in quite thin thus to maintain a micro gap. While the outercircumferential edge for securing respective electrode is made thick to provide long insulation length of spacer. Consequently, an ion source enable of long term operation without causing dielectric breakdown can be obtained even when active gas such as CF4 is used.
    • 9. 发明专利
    • REACTOR
    • JPS559408A
    • 1980-01-23
    • JP8101878
    • 1978-07-05
    • HITACHI LTD
    • HAGITANI TAKASHIMONMA NOBUYUKISEKIMOTO SHINYA
    • H01F27/28H01F27/26H01F27/30H01F27/36H01F37/00
    • PURPOSE:To eliminate time required for drilling, as well as to reduce core loss by installing an insulation material inside an insulation sleeve to prevent a silicon steel plate from dislocation, thus eliminating through holes in a magnetic shield of the silicon steel plate. CONSTITUTION:An insulator 7 which prevents a magnetic shield 2 of a silicon steel plate from dislocation, is installed in an insulation sleeve where a coil 1 of the magnetic sheild 2 comes into contact. The insulator 7 is fixed to an upper metallic clamping tool 4A through a locking bolt 12 that is inserted into a gap 9 provided in the magnetic shield 2. As a result, the magnetic shield 2 is bound between the insulator 7 and the metallic clamping tool 4A. Securing the magnetic shield, in the silicon steel piling direction, is provided by the clamping tool 4 together with horizontal locking bolts 8 at above and below the magnetic shield 2. Consequently, time required for drilling the silicon steel plate is eliminated, and core loss is reduced.