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    • 2. 发明专利
    • MASTER PLATE EXPOSURE DEVICE AND ITS METHOD
    • JP2001014740A
    • 2001-01-19
    • JP18477899
    • 1999-06-30
    • HITACHI LTD
    • YAMANE TOMOYUKIKIMURA NOBUOYANAGI MASASHISUMIYA MASANORI
    • G11B7/26
    • PROBLEM TO BE SOLVED: To raise the cleanliness of a required part to a desired level by setting the inside of the container, which encloses a master plate and a prescribed transporting path or the exposure device itself, at the external pressure or below. SOLUTION: With the purpose of setting the pressure lower than the external pressure in the area enclosed with a wall 10, an evacuation valve 13 is opened, operating a rotary pump 15 for evacuation, running a turbo-molecular pump 16, and adjusting the pressure with a pressure regulating valve 14. After the reduction in the pressure to an arbitrary level, master plate exposure is performed; with the completion of the exposure, the evacuation valve 13 and the pressure regulating valve 14 are closed; and then, a gas purging valve 18 in a gas source 19 is opened, purging the gas into a vacuum container. After the pressure is equalized to the external pressure level, the master plate is taken out. As a result, the area enclosed with the wall 10 in the periphery including the master plate 6 is evacuated and put under the low pressure; hence, the generation and entry of foreign matters as dust are suppressed, bringing an area with little foreign matters and enhancing the cleanliness.
    • 3. 发明专利
    • MASTER PLATE EXPOSURE DEVICE
    • JP2001014739A
    • 2001-01-19
    • JP18477699
    • 1999-06-30
    • HITACHI LTD
    • YANAGI MASASHIKIMURA NOBUOSUMIYA MASANORIYAMANE TOMOYUKI
    • G11B7/26
    • PROBLEM TO BE SOLVED: To prevent sticking of dust due to manual operation by locally cleaning only the part that deals with a master plate inside the device and using a hermetically sealing type cassette case for the master plate when it is moved inside a clean room. SOLUTION: A master plate 11 is transported from a master plate cassette 12 to a turntable 7 by means of a master plate transporting robot 9. In this case, the opening/closing part of the device enclosure 5 is open, but the container of the master plate cassette case 13 is hermetically sealed, leaving no openings as a whole, with cleanliness maintained by the down flow of air of No.2 cleanliness level. The master plate 11 after exposure is transported from the turntable 7 to the cassette 12 by the robot 9 and, after the completion of the transportation, is returned to the cassette case 13 by a cassette case opening/closing mechanism 8; the cassette case 13 is closed linked with its opening/closing part 14 and the opening/closing part 15 of the device enclosure 5, and is again put to the hermetically sealed state.
    • 4. 发明专利
    • OPTICAL TRANSMITTER AND DEVICE EQUIPPED WITH OPTICAL TRANSMITTER
    • JP2001101705A
    • 2001-04-13
    • JP2000220507
    • 2000-07-21
    • HITACHI MAXELLHITACHI LTD
    • SUGIYAMA TOSHINORISUMIYA MASANORI
    • G03F7/20G11B7/09G11B7/135G11B7/26H01S3/00
    • PROBLEM TO BE SOLVED: To suppress the position to be irradiated with a light beam on a light receiving element from being changed due to the change in the wavelength of the light beam in a device which transmits the light beam variable in wavelength from a light source to the light receiving element. SOLUTION: This optical transmitter has an optical element which receives and emits light beam and changes the deflection angle between the received light beam and the emitted light beam according to the change in the wavelength, and a compensation optical element which receives and emits the light beam and changes the compensation deflection angle between the received light beam and the emitted light beam according to the change in the wavelength. The optical element and the compensation optical element are disposed optically in series between a light source and the light receiving element, and the deflection angle changes in a first direction with an increase in the wavelength while the compensation deflection angle changes in a second direction with an increase in the wavelength. The change in the first direction of the deflection angle is compensated by the changes in the second direction of the compensation deflection angle so that the position to be irradiated with the light beam on the light receiving element is suppressed from being changed due to the increase in the wavelength.
    • 6. 发明专利
    • PLASMA TREATING METHOD AND DEVICE
    • JP2000173983A
    • 2000-06-23
    • JP34136498
    • 1998-12-01
    • HITACHI LTD
    • YAMASU HIROAKIFUJII TAKASHIMATANO KATSUJIKIHARA HIDEKISUMIYA MASANORIKANEKIYO TAKAMITSU
    • H01L21/302C23C16/50C23C16/511C23F4/00H01L21/3065H01L21/31H05H1/46
    • PROBLEM TO BE SOLVED: To prevent the generation of foreign matters in a treating chamber by eliminating a deposition of reaction products, which are generated on the inner wall of the treating chamber by etching, by a method wherein the low-temperature part of a plasma generating part in a container is warmed by an electromagnetic wave absorber. SOLUTION: Deposition amount of reaction products which are generated on the inner wall of a treating chamber at the time of an etching treatment is great in the vicinity of the outermost peripheral part of a shower plate 3, which is also a high-frequency transmitting window, and these reaction products are separated from the outermost peripheral part to turn into a foreign matter source, which is generated in the chamber. In this case as the main cause due to the deposition amount of the reaction products, a fact is mentioned that the temperature of the plate 3 is low. There, for raising the temperature of the outer peripheral part of the plate 3, a ring 13 formed by forming an SiC, for example, into a ring shape using a microwave absorber, is provided to bring it into contact with the plate 3, and the outer peripheral part of the plate 3 is heated by this ring 13. Thereby, the reaction products does not deposit on the inner wall of the chamber, the generation of foreign matters in the chamber can be prevented.
    • 7. 发明专利
    • DRY ETCHING APPARATUS
    • JPH09171997A
    • 1997-06-30
    • JP33217395
    • 1995-12-20
    • HITACHI LTDHITACHI TECHNO ENG
    • SUMIYA MASANORIFUJII TAKASHIKIKKAI MOTOHIKOMATANO KATSUJI
    • C23F4/00H01L21/302H01L21/3065
    • PROBLEM TO BE SOLVED: To obtain a dry etching apparatus by which an etching treatment is performed uniformly by a method wherein a ring which is situated at the upper part from a wafer in a plasma and which is not situated directly above the wafer is installed so as not to come into contact width the wafer. SOLUTION: A wafer 13 is conveyed to the position of a wafer 13 inside a plasma treatment apparatus by means of a conveyance device. An insulating film 12 is formed between the wafer 13 and an electrode 10, a groove its formed on the insulating film 12, the groove is filled with a gas for wafer cooling, and the wafer 13 can be adjusted to a prescribed temperature. In addition, in order to protect the electrode 10 and the insulating film from a generated plasma, a ring 17 which is supported at a treatment-chamber wall 18 by a support 21 is installed on the whole circumference near the wafer 13. In this state, a DC bias voltage is applied to the electrode 10 by a DC power supply 11, the wafer 13 is attracted to the electrode 10 via the insulating film 12, a cooling gas is then introduced to the rear of the wafer 13, high-frequency power is applied to the electrode 10 by a high-frequency power supply 15, and the etching treatment of the wafer 13 is performed. Thereby, the etching treatment of the wafer can be performed with high uniformity.