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1. 发明专利

JPH08339991A PLASMA TREATMENT SYSTEM 失效
公开(公告)号：JPH08339991A
公开(公告)日：1996-12-24
申请号：JP15658096
申请日：1996-06-18
申请人： HITACHI LTD , HITACHI TECHNO ENG
发明人： KAJI TETSUNORI , FUJII TAKASHI , KIKKAI MOTOHIKO , KAWASAKI YOSHINAO , SAIKAI MASAHARU
IPC分类号： H05H1/46 , C23C14/35 , C23C16/50 , C23C16/511 , C23F4/00 , C30B23/08 , H01L21/203 , H01L21/205 , H01L21/28 , H01L21/302 , H01L21/3065 , H01L21/31
摘要： PURPOSE: To reduce the potential difference between the strong plasma and a second electrode by providing at least a part of the second electrode on a part surrounded by insulator and by introducing gas from the top of the second electrode through a hole in an airtight container to an area to generate plasma. CONSTITUTION: A sample 9, a first electrode 10, which holds the sample insulated from a metal container 4, and a second electrode 11 are arranged in an airtight container. At a part close to the microwave introduction part, strong ECR plasma is generated by the sample 9 by introducing microwaves with a coil 8 and gas. The second electrode 11 is arranged at a part of strong plasma in the part surrounded by the quartz bell jar 3. The gas discharged from a gas introducing means 5 passes through a micro hole bored in the metal container 4 and penetrates into the airtight chamber through a space made by the electrode 11 and the inner plane of the quartz bell jar 3.

2. 发明专利

JPH05174995A PLASMA PROCESSING DEVICE 失效
公开(公告)号：JPH05174995A
公开(公告)日：1993-07-13
申请号：JP31890191
申请日：1991-12-03
申请人： HITACHI LTD , HITACHI TECHNO ENG
发明人： KAJI TETSUNORI , FUJII TAKASHI , KIKKAI MOTOHIKO , SAITO TAKESHI
IPC分类号： C23C16/50 , C23C16/511 , G01N24/14 , G01R33/64 , H01L21/302 , H01L21/3065 , H01L21/31 , H01P1/163 , H05H1/46
摘要： PURPOSE:To uniformly process a sample of large bore by converting a microwave into a microwave of TE0n (n: natural number) mode or its similar mode of a circular waveguide, and changing processing gas into plasma. CONSTITUTION:In a mode converter waveguide 25, an opening part connected to a circular waveguide 26 is formed 90 deg. shifted relating to a connection part to a square waveguide 21, to set opening length of this part to about double the length of the connected opening part in a side of the waveguide 21. The waveguide 25 is for conversion from a TE10 mode to a TE20 mode of the square waveguide, to provide the TE10 mode in a connection side of the waveguide 21 and the TE20 mode in a side of the waveguide 26. The TE20 mode of this square waveguide is converted into a TE01 mode, when advanced into the waveguide 26. In this way, uniform processing can be performed even in the vicinity of the center axis of a sample 10, and further a part of high plasma density is uniformly processed over a wide area to improve uniformity of distribution on a sample surface.

3. 发明专利

JPH11340203A VACUUM TREATMENT APPARATUS AND TREATMENT STAGE 失效
公开(公告)号：JPH11340203A
公开(公告)日：1999-12-10
申请号：JP14334798
申请日：1998-05-25
申请人： HITACHI LTD , HITACHI TECHNO ENG
发明人： SUMIYA MASANORI , KANAI SABURO , ITO YOICHI , FUJII TAKASHI , KAWAHARA HIRONORI , HAMAZAKI RYOJI , TAKAHASHI NUSHITO , KIKKAI MOTOHIKO
IPC分类号： C23F4/00 , H01L21/00 , H01L21/205 , H01L21/302 , H01L21/3065 , H01L21/683
摘要： PROBLEM TO BE SOLVED: To provide a vacuum treatment apparatus and a treatment stage with an electrostatically chucking means suitable for treating a wafer at high temperatures. SOLUTION: In a vacuum treatment apparatus, a treatment stage 7 is provided in a treatment chamber 3. A workpiece is electrostatically chucked to the treatment stage 7 in atmosphere under lowered pressure, and then the treatment stage 7 is heated to treat the workpiece at a high temperature. The treatment stage 7 has an electrode member made of titanium or titanium-based alloy. A dielectric film for electrostatic chucking is formed on the electrode member. In this case, titanium and alumina ceramics have no affinity for donding, so that a nickel alloy (Ni. Al) is desirably interposed between these members.

4. 发明专利

JPH08321494A PLASMA TREATMENT EQUIPMENT 失效
公开(公告)号：JPH08321494A
公开(公告)日：1996-12-03
申请号：JP15658196
申请日：1996-06-18
申请人： HITACHI LTD , HITACHI TECHNO ENG
发明人： KAJI TETSUNORI , FUJII TAKASHI , KIKKAI MOTOHIKO , KAWASAKI YOSHINAO , SAIKAI MASAHARU
IPC分类号： H05H1/46 , C23C14/35 , C23C16/50 , C23C16/507 , C23C16/511 , C23F4/00 , C30B23/08 , C30B25/02 , H01L21/203 , H01L21/205 , H01L21/28 , H01L21/285 , H01L21/302 , H01L21/3065 , H01L21/31
摘要： PURPOSE: To prevent transfer of a shadow formed by a meshy metal by a method wherein a part of a second electrode is provided in a part surrounded by an insulator, while the meshy metal is provided on a sample, and an alternating current is superimposed on a coil. CONSTITUTION: A strong ECR plasma is generated in a part being closer to a microwave introducing part 2 than a sample 9 by an introduced microwave, a coil 8 and gas. A high-frequency wave is impressed between a first electrode 10 and a second electrode 11 by a high-frequency power source 12 and a matching unit 14 attached. Moreover, ions are moved in a lateral direction by superimposing an alternating current on the coil 8, so as to avoids transferring a shadow formed by a meshy metal provided in a part on the sample 9 onto the sample 9. According to this constitution, an AC voltage is impressed stably, effectively and without fluctuation and anisotropic plasma treatment is executed stably.

5. 发明专利

JPH08321493A PLASMA TREATMENT EQUIPMENT 失效
公开(公告)号：JPH08321493A
公开(公告)日：1996-12-03
申请号：JP15657996
申请日：1996-06-18
申请人： HITACHI LTD , HITACHI TECHNO ENG
发明人： KAJI TETSUNORI , FUJII TAKASHI , KIKKAI MOTOHIKO , KAWASAKI YOSHINAO , SAIKAI MASAHARU
IPC分类号： H05H1/46 , C23C14/35 , C23C16/50 , C23C16/511 , C23F4/00 , C30B23/08 , C30B25/02 , H01L21/203 , H01L21/205 , H01L21/28 , H01L21/285 , H01L21/302 , H01L21/3065 , H01L21/31
摘要： PURPOSE: To lessen a potential difference between generated plasma and a second electrode by installing a part of the second electrode in a part surrounded by an insulator and by providing a mesh metal on a sample. CONSTITUTION: A strong ECR plasma is generated in a part being closer to a microwave introducing part 2 than a sample 9 by an introduced microwave, a coil 8 and gas. A high-frequency wave is impressed between a first electrode 10 and a second electrode 11 by a high-frequency power source 12 and a matching unit 14 attached. The second electrode 11 is installed in a part which is surrounded by a quartz bell jar 3 and wherein the plasma is strong, so as to lessen a potential difference between the strong plasma and the second electrode 11. Thereby the high-frequency wave is impressed between the plasma and the sample efficiently and without fluctuation, the directional property of ions is made uniform and execution of anisotropic and high-rate etching is enabled.

6. 发明专利

JPH08316295A ELECTROSTATIC ATTRACTING METHOD FOR PLASMA PROCESSING DEVICE 失效
公开(公告)号：JPH08316295A
公开(公告)日：1996-11-29
申请号：JP12110095
申请日：1995-05-19
申请人： HITACHI LTD , HITACHI TECHNO ENG
发明人： SUMIYA MASANORI , MATANO KATSUJI , FUJII TAKASHI , KIKKAI MOTOHIKO
IPC分类号： H05H1/46 , B23Q3/15 , H01L21/302 , H01L21/3065 , H01L21/68 , H01L21/683
摘要： PURPOSE: To reduce a time for processing a sample wafer by a method without static elimination wherein, in a smaller range than an electrostatic attracting force during plasma processings hinders a detachment after processed and in a larger range than a floating by heat transfer gas pressure supplied to a reverse face of the sample ore is prevented, an effective attracting voltage is applied to an electrode. CONSTITUTION: In order to obtain an attracting pressure force being about 8 to 15×10 kgf/cm by a DC power source 11 in an electrode 10, a voltage in a range of about -50 to -580V is applied between the electrode 10 and a wafer 13 via an insulation film 12. Further, a bias voltage is applied to the electrode 10 by an AC power source 15 to control incident energy on the wafer 13 of ions in plasma. At this time, a voltage applied by the DC power source 11 is within a range that it does not hinder a detachment from the electrode of the wafer 13 after the plasma processing or conveyance, and the wafer 13 does not float from the electrode 10 by heat transfer pressure introduced to a reverse face of the wafer 3. Thus, dielectricity processings after processed can be omitted to reduce a processing time per wafer.

7. 发明专利

JPS61194173A ALLOY FILM FORMING METHOD 失效
公开(公告)号：JPS61194173A
公开(公告)日：1986-08-28
申请号：JP2176685
申请日：1985-02-08
申请人： HITACHI LTD , HITACHI TECHNO ENG
发明人： KIKKAI MOTOHIKO , KIYOTA HIDEJI , FUJII TAKASHI
IPC分类号： C23C14/34 , C23C14/35 , C23C14/36
摘要： PURPOSE:To make the formation of an alloy film having different compsn. ratios from an alloy target having one compsn. ratio in the stage of using the alloy target and forming possible by sputtering the alloy film on the surface of a work by moving and adjusting the position of plasma. CONSTITUTION:Gaseous Ar is introduced under the specified pressure through an introducing port 12 into a vacuum vessel 10 the inside of which is evacuated to a high vacuum by a vacuum pump 11. A negative voltage is impressed to a sputtering electrode 14 to generate the plasma near the Si-Mo alloy target 15. A plasma group 18 is formed by a magnetic field 17 of a magnetic field varying device 13 by an electromagnet and the diameter (d) thereof is changed to change the size of the plasma group to the size at which the alloy film of the prescribed compsn. ratio is formed on the work 16. The alloy film having the different compsn. ratios can be formed on the surface of the work 16 even from one alloy target and therefore the formation of the alloy film having the prescribed Si-Mo compsn. ratio is made possible by using the alloy target having the optional Si-Mo ratio.

8. 发明专利

JPH04354867A PLASMA TREATING DEVICE 失效
公开(公告)号：JPH04354867A
公开(公告)日：1992-12-09
申请号：JP12906491
申请日：1991-05-31
申请人： HITACHI LTD , HITACHI TECHNO ENG
发明人： KAJI TETSUNORI , FUJII TAKASHI , KIKKAI MOTOHIKO , KAWASAKI YOSHINAO , SAIKAI MASAHARU
IPC分类号： C23C14/34 , C23C16/50 , C23C16/511 , C23F4/00 , C30B25/02 , C30B25/08 , H01J37/32 , H01L21/28 , H01L21/302 , H01L21/3065 , H01L21/31 , H05H1/46
摘要： PURPOSE:To provide a plasma treating device capable of efficiently and stably impressing an AC voltage and in which ECR plasma is produced and an AC voltage is impressed between a sample and the plasma to anisotropically treat the sample. CONSTITUTION:An insulator 3 is provided in the airtight vessel of this ECR plasma treating device, and plasma is produced within the insulator 3. A second electrode 11 is set within the insulator 3 to apply a potential to the plasma. Consequently, the potential difference between the strong plasma and the second electrode 11 is reduced, an AC voltage is efficiently and stably impressed between the strong plasma and a first electrode 10 or a sample 9, and the sample is anisotropically and stably treated with the plasma.

9. 发明专利

JPH01248521A LOW-TEMPERATURE DRY ETCHING DEVICE 失效
公开(公告)号：JPH01248521A
公开(公告)日：1989-10-04
申请号：JP7434088
申请日：1988-03-30
申请人： HITACHI LTD , HITACHI TECHNO ENG
发明人： KIKKAI MOTOHIKO , SHIROO KAZUHIRO , FUJII TAKASHI
IPC分类号： H01L21/302 , H01L21/3065
摘要： PURPOSE:To improve throughput by constituting a preliminary cooling room, an etching room, and a heat-up room individually. CONSTITUTION:A sample is carried to a load room 4 from air and is carried to a preliminary cooling room 1 which is subject to vacuum exhaustion through a gate valve 10 after vacuum exhaustion. After the sample is subject to preliminary cooling to a specified temperature in the preliminary room 1, it is carried to an etching room 2 through a gate valve 11 and is installed on an electrode 6 which is cooled by a cooling mechanism 7. Then, by applying a high-frequency power supply 8 within a specified treatment gas environment, plasma is generated between the electrode 6 and an opposing electrode 9, and then the sample is subject to a low-temperature etching treatment. The sample after etching treatment is carried to a heat-up room 3 which is subject to vacuum exhaustion through a gate valve 11 and is heated. Then, it is carried to an unload room 5 through a gate valve 12 and only the unload room is cleaned. Then. it is carried into air and the treatment is completed. Since preliminary cooling, low-temperature etching, and heat-up of samples can be performed simultaneously, throughput of the samples in a low-temperature etching can be improved.

10. 发明专利

JPH09171997A DRY ETCHING APPARATUS 失效
公开(公告)号：JPH09171997A
公开(公告)日：1997-06-30
申请号：JP33217395
申请日：1995-12-20
申请人： HITACHI LTD , HITACHI TECHNO ENG
发明人： SUMIYA MASANORI , FUJII TAKASHI , KIKKAI MOTOHIKO , MATANO KATSUJI
IPC分类号： C23F4/00 , H01L21/302 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To obtain a dry etching apparatus by which an etching treatment is performed uniformly by a method wherein a ring which is situated at the upper part from a wafer in a plasma and which is not situated directly above the wafer is installed so as not to come into contact width the wafer. SOLUTION: A wafer 13 is conveyed to the position of a wafer 13 inside a plasma treatment apparatus by means of a conveyance device. An insulating film 12 is formed between the wafer 13 and an electrode 10, a groove its formed on the insulating film 12, the groove is filled with a gas for wafer cooling, and the wafer 13 can be adjusted to a prescribed temperature. In addition, in order to protect the electrode 10 and the insulating film from a generated plasma, a ring 17 which is supported at a treatment-chamber wall 18 by a support 21 is installed on the whole circumference near the wafer 13. In this state, a DC bias voltage is applied to the electrode 10 by a DC power supply 11, the wafer 13 is attracted to the electrode 10 via the insulating film 12, a cooling gas is then introduced to the rear of the wafer 13, high-frequency power is applied to the electrode 10 by a high-frequency power supply 15, and the etching treatment of the wafer 13 is performed. Thereby, the etching treatment of the wafer can be performed with high uniformity.

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