专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明专利

JPS57192049A MANUFACTURE OF BUMP ELECTRODE 失效
公开(公告)号：JPS57192049A
公开(公告)日：1982-11-26
申请号：JP7647181
申请日：1981-05-22
申请人： HITACHI LTD , HITACHI MICROCUMPUTER ENG
发明人： SATOU AKIHIRO , MOROSHIMA HEIJI , TERAKADO HAJIME , KUWATANI SETSUO , NAITOU TOKUO
IPC分类号： H01L21/60 , H01L21/92
摘要： PURPOSE:To manufacture a uniform electrode in a short time, by forming a wiring layer other than a base electrode in the surface layer part of a semiconductor substrate, and flowing a plating current in said layer. CONSTITUTION:A bump forming wiring layer 11 is formed in the entire area of the main surface of the substrate 5. The region of the layer 11 other than a bump electrode forming region 12 is coated by a protecting film 13 comprising a resist. The substrate 5 is immersed in an electrolyte plating tub, and the bump electrode comprising silver is formed on the layer 11, with the layer 11 as a negative plating electrode. Thereafter, the unnecessary part of the bump electrde forming wiring layer 11 other than the protecting film 13 and the base electrode 8 is etched away. An electrde 9 is formed on the lower surface of the substrate 5. Thus a diode 2 is formed. In this method, the value of the plating current can be made large regardless of the maximum rating of the diode element, and the plate growth can be increased.

2. 发明专利

JPS56158485A SCHOTTKY BARRIER DIODE ELEMENT 失效
公开(公告)号：JPS56158485A
公开(公告)日：1981-12-07
申请号：JP6176980
申请日：1980-05-12
申请人： HITACHI LTD
发明人： MOROSHIMA HEIJI , TERAKADO HAJIME , SATOU AKIHIRO
IPC分类号： H01L29/47 , H01L29/872
摘要： PURPOSE:To alleviate thermal stress and to obtain a high power element by providing a grid shaped insulating layer or a layer whose conductive type is different from that of a substrate on the surface of the substrate, and linking a barrier metal which is independently formed in each grid with a flexible conductive layer. CONSTITUTION:P diffused layers 14 (or insulating films) which are to become guard rings are provided on the surface of the N type Si substrate 2 in a grid shape. For example, a W electrode 3 which is to become the barrier metal is formed on each grid on the substrate surface so that metals are separated to each other. Then, after, e.g., an Ag film 15 is formed on the entire surface, a bump electrode 7 comprising, e.g., Ag is formed in the region on the substrate, on which the W electrode 3 is not provided, and the part other than electrode 7 is covered with an insulator. On the bottom surface of the substrate, an electrode comprising an Au layer 8 and an Ag layer 9 is provided. Thereafter, sealing is performed by glass, and a double heat sink type element is obtained. Since the barrier metal 3 is divided into the relatively small areas, the thermal stress can be reduced to a low value even though total area of the barriers is large, and the element suitable for the high power can be obtained.

3. 发明专利

JPS5650581A SCHOTTKY DIODE 失效
公开(公告)号：JPS5650581A
公开(公告)日：1981-05-07
申请号：JP12539679
申请日：1979-10-01
申请人： HITACHI LTD
发明人： SATOU AKIHIRO , MOROSHIMA HEIJI
IPC分类号： H01L21/283 , H01L29/41 , H01L29/47 , H01L29/872
摘要： PURPOSE:To secure electric characteristics and reliability against stress of a large power Schottky diode by dividing electrode section becoming passivation and barrier into small segments. CONSTITUTION:A surface insulating film is divided into a plurality of islands 2a, 2b,... on the main surface of a semiconductor substrate 1, Schottky barriers 3a, 3b,... are formed through the holes of the insulating film at the respective islands, and electrode 4 connected commonly to the respective barrier metals are provided thereon. Thus, stress caused by the difference of expansion coefficients and the like can be dispersed, and the adverse affect of the stress to the electric characteristics can be prevented.

4. 发明专利

JPS5940586A Schottky barrier diode and manufacture thereof 失效
标题翻译：肖特彼勒二极管及其制造
公开(公告)号：JPS5940586A
公开(公告)日：1984-03-06
申请号：JP14933582
申请日：1982-08-30
申请人： Hitachi Ltd
发明人： SATOU AKIHIRO , TERAKADO HAJIME
IPC分类号： H01L29/47 , H01L29/872
CPC分类号： H01L29/872
摘要： PURPOSE:To raise the withstand voltage of a barrier up to that of a semiconductor bulk by a method wherein a layer of reacted substance of the metal composing a metallic electrode with a semiconductor is generated deeply under the electrode, when the metallic electrode is mounted partly on the surface of the semiconductor into a Schottky barrier diode. CONSTITUTION:An N type layer 2 is epitaxially grown on an N type Si substrate 1, the entire surface is covered with an insulation film 3, an aperture is bored through the film 3, and the metal 4 composed of W is adhered on the exposed surface of the layer 2 over to the edge of the window, resulting in the formation of the metallic electrode 4. At the same time, the silicide layer 5 of W and Si composing the electrode 4 is generated in the layer 2 under the electrode 4 to the depth of several hundred - several thousand Angstrom , and the bottom edge of the layer 5 is made to generate a large curvature R. Thus, the silicide layer is made to infiltrate deeply into the layer 2, and rounding is provided to the bottom edge; therefore field concentration does not occur, the withstand voltage of a barrier becomes equal to the bulk withstand voltage of the substrate 1, and accordingly the withstand voltage improves.
摘要翻译：目的：通过一种方法，通过一种方法将栅极的耐受电压提高到半导体本体的耐电压，其中构成金属电极的金属与半导体的反应物质层深深地在电极下面产生，当金属电极部分地安装在半导体的表面上形成肖特基势垒二极管。构成：在N +型Si衬底1上外延生长N型层2，整个表面被绝缘膜3覆盖，孔5穿过膜3，并且由W组成的金属4被粘附在层2的暴露表面上到窗口的边缘，导致金属电极4的形成。同时，构成电极4的W和Si的硅化物层5在下面的层2中产生电极4到数百〜数千埃的深度，并且使层5的底边缘产生大的曲率R.因此，使硅化物层深入到层2中，并且提供四舍五入到底边; 因此不会发生场浓度，所以势垒的耐受电压等于基板1的体积耐受电压，因此耐电压提高。

5. 发明专利

JPS5721839A Forming method for bump electrode of p type schottky barrier diode 失效
标题翻译： P型肖特基二极管保护电极的形成方法
公开(公告)号：JPS5721839A
公开(公告)日：1982-02-04
申请号：JP9574580
申请日：1980-07-15
申请人： Hitachi Ltd
发明人： SATOU AKIHIRO , MOROSHIMA HEIJI , TERAKADO HAJIME
IPC分类号： H01L21/60 , H01L29/47 , H01L29/872
CPC分类号： H01L2224/11 , H01L2224/13099 , H01L2924/01015 , H01L2924/01024 , H01L2924/01047 , H01L2924/01074 , H01L2924/01078 , H01L2924/12032 , H01L2924/00 , H01L2924/00012
摘要： PURPOSE:To obtain an electrode of desired height within increasing the capacity of a diode by partly covering an electrode for Schottky barrier formed partly on a P type Si substrate with a metallic film and plating a silver bump electrode on the film. CONSTITUTION:After a Schottky barrier metal electrode 2 of W or the like is formed via an oxidized film 3 on a P type Si substrate 1, a metallic film 5 made of Cr layer 6 and Ag layer 7 is formed thereon, a photoresist is then partly formed, a silver bump electrode 10 is formed by a plating method, and the photoresist film is further removed. Since the capacity of the diode does not exceed the designing value in this manner and the etching of the metallic film is not performed, the height of the silver bump cannot be lowered by the etching.
摘要翻译：目的：通过部分覆盖用金属膜部分地形成在P型Si衬底上的肖特基势垒的电极并在膜上电镀银凸起电极，以增加二极管的容量来获得所需高度的电极。构成：在P型Si衬底1上经由氧化膜3形成W等的肖特基势垒金属电极2之后，在其上形成由Cr层6和Ag层7构成的金属膜5，然后将光致抗蚀剂通过电镀法形成银凸块电极10，并进一步除去光致抗蚀剂膜。由于二极管的容量不以这种方式超过设计值，并且不执行金属膜的蚀刻，因此通过蚀刻不能降低银凸起的高度。

6. 发明专利

JPS5687373A SCHOTTKY BARRIER DIODE AND MANUFACTURE THEREFOR 失效
公开(公告)号：JPS5687373A
公开(公告)日：1981-07-15
申请号：JP16407179
申请日：1979-12-19
申请人： HITACHI LTD
发明人： SATOU AKIHIRO , MOROSHIMA HEIJI , TERAKADO HAJIME
IPC分类号： H01L29/47 , H01L29/872
摘要： PURPOSE:To obtain high dielectric strength without increasing a junction capacity by lowering the carrier concentration at a semiconductor region corresponding to an electrode peripheral edge than the periphery. CONSTITUTION:A p type epitaxial layer 1 is formed on a p Si substrate 2 to provide thermal oxide films 4 having windows 12. Next, thermal oxidation is performed in wet oxygen atmosphere including the parts of the windows 12 to form p regions by sucking up boron from the p type epitaxial layer 1 at the parts of the windows 12. Then, an electrode 3 is provided to form a Schottky barrier and an electrode 8 is also formed at the bottom of the substrate 2 to obtain a Schottky barrier diode.

7. 发明专利

JPS5649576A SCHOTTKY DIODE 失效
公开(公告)号：JPS5649576A
公开(公告)日：1981-05-06
申请号：JP12412679
申请日：1979-09-28
申请人： HITACHI LTD
发明人： TANBARA HIDEO , SATOU AKIHIRO
IPC分类号： H01L29/47 , H01L29/872
摘要： PURPOSE:To lower the threshold voltage and increase resisting pressure by a method wherein the portion near the surface where a semiconductor is connected with a metal is surrounded with a low density layer of the same conductive type as that of the semiconductor. CONSTITUTION:After an n layer is formed on an n type Si substrate, an n type circular layer 3 is laid on it by injecting B ions. Then an opening is made in an SiO2 film 4 so that Ti 5 may come into contact with the circular layer. A leak in a Schottky diode is prevented in the neighborhood of the interfacing surface by such a construction, while reverse resisting pressure is increased. When using a p type Si substrate, a circular p layer is formed by laying a p layer to produce a W electrode. Then a similar Schottky diode with high resisting pressure and low threshold voltage become obtainable.

8. 发明专利

JPS5598070A ELEVATOR 失效
公开(公告)号：JPS5598070A
公开(公告)日：1980-07-25
申请号：JP12079279
申请日：1979-09-21
申请人： HITACHI LTD
发明人： SHIMIZU TAICHI , SATOU KIMIO , SATOU AKIHIRO
IPC分类号： B66B7/08 , B66B11/02 , B66D3/04

9. 发明专利

JPS5986585A VIBRATION PREVENTIVE STRUCTURE OF HOISTING MACHINE FOR ELEVATOR 失效
公开(公告)号：JPS5986585A
公开(公告)日：1984-05-18
申请号：JP19593582
申请日：1982-11-10
申请人： HITACHI LTD
发明人： TAKEDA KAZUTOSHI , NARA TOSHIHIKO , OOTA MASATOSHI , SATOU AKIHIRO , SAWAHATA OSAMU
IPC分类号： B66B11/04

10. 发明专利

JPS58104881A METHOD OF MEASURING BRAKING FORCE OF BRAKE IN ROPE TYPE ELEVATOR 失效
公开(公告)号：JPS58104881A
公开(公告)日：1983-06-22
申请号：JP20165381
申请日：1981-12-16
申请人： HITACHI LTD
发明人： SATOU AKIHIRO , ITSUSHIKI KATSUTO
IPC分类号： B66B1/06 , B66B3/00 , G01L5/28 , H02P3/04

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式