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1. 发明专利

JPS57192049A MANUFACTURE OF BUMP ELECTRODE 失效
公开(公告)号：JPS57192049A
公开(公告)日：1982-11-26
申请号：JP7647181
申请日：1981-05-22
申请人： HITACHI LTD , HITACHI MICROCUMPUTER ENG
发明人： SATOU AKIHIRO , MOROSHIMA HEIJI , TERAKADO HAJIME , KUWATANI SETSUO , NAITOU TOKUO
IPC分类号： H01L21/60 , H01L21/92
摘要： PURPOSE:To manufacture a uniform electrode in a short time, by forming a wiring layer other than a base electrode in the surface layer part of a semiconductor substrate, and flowing a plating current in said layer. CONSTITUTION:A bump forming wiring layer 11 is formed in the entire area of the main surface of the substrate 5. The region of the layer 11 other than a bump electrode forming region 12 is coated by a protecting film 13 comprising a resist. The substrate 5 is immersed in an electrolyte plating tub, and the bump electrode comprising silver is formed on the layer 11, with the layer 11 as a negative plating electrode. Thereafter, the unnecessary part of the bump electrde forming wiring layer 11 other than the protecting film 13 and the base electrode 8 is etched away. An electrde 9 is formed on the lower surface of the substrate 5. Thus a diode 2 is formed. In this method, the value of the plating current can be made large regardless of the maximum rating of the diode element, and the plate growth can be increased.

2. 发明专利

JPH03106040A MANUFACTURE OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH03106040A
公开(公告)日：1991-05-02
申请号：JP24452889
申请日：1989-09-20
申请人： HITACHI LTD , HITACHI TOKYO ELECTRONICS
发明人： NISHII YASUSHI , TERAKADO HAJIME , MOROSHIMA HEIJI , OGURI KEIJI , MOCHIZUKI MASARU , OTOGURO MASATAKA , YAMADA TAIRA
IPC分类号： H01L21/52
摘要： PURPOSE:To improve the yield of a semiconductor device as well as to prevent the generation of a tracking error by a method wherein a continuous mounting of pellets on a lead frame is continuously performed in the order of the pellets adjoining in the direction conforming to a certain regularity with a certain pellet within a wafer as a reference. CONSTITUTION:Pellets 2a, 2b, 2c... existing in a direction X to extend spirally from a pellet 2 existing in almost the center of a water 1 are mounted in order on a lead frame 3 in the order of the pellets 2a, 2b, 2c... with this pellet 2 as a reference. Then, a forming for bending leads of the pellets 2, 2a, 2b, 2c... is performed, a taping of the pellets is performed in order on a carrier tape 4 without altering the order of the pellets 2, 2a, 2b, 2c..., this tape 4 is packed in the form of a winding on a reel 5 and a deliverty to users is performed. Thereby, it becomes possible to confine an apparent capacity deviation within an allowable range and as the result, the generation of a tracking error can be prevented.

3. 发明专利

JPH0399288A DOPPLER RADAR MODULE 失效
公开(公告)号：JPH0399288A
公开(公告)日：1991-04-24
申请号：JP23756289
申请日：1989-09-13
申请人： HITACHI LTD , HITACHI TOKYO ELECTRONICS
发明人： OTOGURO MASATAKA , TANBARA HIDEO , MOROSHIMA HEIJI , TERAKADO HAJIME , KANEKO KAZUO
IPC分类号： H01P5/02 , G01S7/03 , H01P5/18
摘要： PURPOSE:To make an apparatus small in size and to reduce the cost thereof without turning the degree of electromagnetic coupling to be lower than usual, by disposing a strip line for electromagnetic coupling between transmission and reception antennas. CONSTITUTION:A Gunn diode H oscillates and its power is emitted from a batch antenna A for transmission. A part of the power excites the whole of a strip line B for electromagnetic coupling which overlaps with the opposite position of the antenna A, and the line B operates as a resonator. Then a strong electromagnetic field is generated and it reaches a batch antenna CA for reception which overlaps with the opposite position of the line B. Thus a reference signal as a local source from the antenna A to the antenna CA reaches the latter. Meanwhile, another signal emitted from the antenna A strikes on some object and turns to be a reflection signal of which the frequency is shifted by a Doppler effect, and it is received by the antenna CA. These reference and reflection signals flows into a Schottky diode I from the antenna CA and a difference component DELTAf of frequencies is obtained by this diode I. Then it is outputted from an IF output terminal F and the movement of the object is detected therefrom in an analyzing device or the like.

4. 发明专利

JPS5922368A Zener diode and its manufacture 失效
标题翻译： ZENER二极管及其制造
公开(公告)号：JPS5922368A
公开(公告)日：1984-02-04
申请号：JP13033082
申请日：1982-07-28
申请人： Hitachi Ltd
发明人： MOROSHIMA HEIJI , FUJII HIDEHARU , ISHII SEIICHI , TERAKADO HAJIME
IPC分类号： H01L29/866 , H01L29/90
CPC分类号： H01L29/866
摘要： PURPOSE:To obtain the Zener diode of noise characteristics which generate no waveform oscillation and negative resist phenomenon even in a low current region by injecting a heavy-metal diffuser or elementary particles by the irradiation of electron rays or neutron rays to a P-N junction section. CONSTITUTION:Boron is diffused annularly to an N conduction type silicon substrate 2 of approximately 400mum thickness through photolithography and diffusion technique to form a P conduction type guard ring 5 of 0.7-1.2mum depth. Boron is diffused again through photolithography and diffusion technique to form a P conduction type region 3. Gold 10 is diffused to the main surface of the silicon substrate 2, and made reach up to the P-N junction section. A surface region except the contact region of the P conduction type region 3 of the silicon substrate 2 is coated with an insulating film 6 while AuGa and Ag are laminated in the contact region in several thousand Angstrom thickness in succession through evaporation to form an electrode 7, and Ag is plated thickly onto the electrode 7 in 50mum at the same time to form an electrode 8. AuSb and Ag are also laminated on the back side of the silicon substrate 2 in serveral thousand Angstrom thickness in succession through evaporation to form an electrode 9, and a Zener diode chip 1 is formed.
摘要翻译：目的：为了获得即使在低电流区域也不产生波形振荡和负抗蚀剂现象的齐纳二极管，通过将电子射线或中子射线照射到P-N接合部分，注入重金属扩散器或基本粒子。构成：通过光刻和扩散技术，硼通过光刻和扩散技术环状散布到约400μm厚的N +导电型硅衬底2，以形成0.7-1.2μm深度的P +导电型保护环5。硼通过光刻和扩散技术再次扩散以形成P导电型区域3.金10扩散到硅衬底2的主表面，并到达P-N结部分。除了硅基板2的P导电型区域3的接触区域之外的表面区域被绝缘膜6涂覆，同时通过蒸发将AuGa和Ag在数千埃厚度的接触区域中层压在一起，以形成电极7 并且Ag在同一时间以50微米厚度电镀在电极7上以形成电极8. AuSb和Ag也通过蒸发连续层叠在硅衬底2的背面上，连续地通过蒸发形成一千埃厚度，以形成电极 9，并且形成齐纳二极管芯片1。

5. 发明专利

JPS5868986A SCHOTTKY BARRIER-DIODE 失效
公开(公告)号：JPS5868986A
公开(公告)日：1983-04-25
申请号：JP16722781
申请日：1981-10-21
申请人： HITACHI LTD
发明人： SATOU AKIHIRO , TERAKADO HAJIME , MOROSHIMA HEIJI , YAMADA KOUHEI
IPC分类号： H01L29/47 , H01L29/872
摘要： PURPOSE:To form a steep breakdown wave-form, to make the diode resist to thermal breakdown and to increase forward currents by forming a buried layer, which has high concentration and consists of the first conduction type, to the semiconductor substrate of an epitaxial layer region at the inside of a guard ring and an interface section. CONSTITUTION:An implanted layer 7 is formed to the N type silicon semiconductor substrate 3 through ion implantation. The N type epitaxial layer 4 is shaped to the upper surface of the substrate 3. The N type buried layer 8 extending to the epitaxial layer 4 and the substrate 3 is formed through heat treatment and the extension and diffusion of the layer 7. A circular guard ring 2 is shaped to the surface section of the epitaxial layer 4. An insulating film 5 is molded onto the layer 4, and curcularly removed to form a contact window, and an electrode 1 is shaped to the window.

6. 发明专利

JPS57138132A MANUFACTURE OF SEMICONDUCTOR DEVICE THROUGH ION IMPLANTATION 失效
公开(公告)号：JPS57138132A
公开(公告)日：1982-08-26
申请号：JP2301681
申请日：1981-02-20
申请人： HITACHI LTD
发明人： OGURI KEIJI , MOROSHIMA HEIJI , TERAKADO HAJIME
IPC分类号： H01L21/265
摘要： PURPOSE:To manufacture the device having a desired impurity profile efficiently in a short time by implanting ions having low concentration at two or more of plural times while changing energy in a junction forming process through ion implantation. CONSTITUTION:Two conductive type determined impurities are formed to the main surface of one conductive type substrate through the ion implantation, and the device having a P-N junction is manufactured in the substrate. In the ion implanting process, ions are implanted at times such as twice when the concentration of the surface and concentration near the junction can be brought to desired values through the implantation of a condition such as 100kev, 5X10 cm . Primary implantation is executed at a condition such as 150kev, 7X10 cm , and secondary implantation is executed under the condition of 40kev, 6X10 cm . Accordingly, since the profile equal to the case when ions are implanted once can be formed, th process can be completed in a short time even when using a low current implanting device, and the efficiency of the device can be improved.

7. 发明专利

JPS56140652A DIODE 失效
公开(公告)号：JPS56140652A
公开(公告)日：1981-11-04
申请号：JP4357580
申请日：1980-04-04
申请人： HITACHI LTD
发明人： NAITOU MASAYA , TERAKADO HAJIME , KUWATANI SETSUO , MOROSHIMA HEIJI
IPC分类号： H01L23/48 , H01L23/051
摘要： PURPOSE:To obtain a small-sized diode with a high tensile snapping strength in an axial direction and bearable to a thermal shock by a method wherein a ratio of a length (l) of a lead end placed in contact with an inner wall of a glass tube and a thickness (t) of the glass tube is defined within a prescribed range. CONSTITUTION:A dumet wire for heat sink in a thick diameter is integrated with the ends 12 of the lead 11. An Si pellet 13 is connected held at the both sides by the ends 12. The outer diameters (d) of the ends 12 are set as 0.6-0.85mm.phi from various factors. The glass tube 14 having the almost same coefficient of thermal expansion as the dumet wire is fitted and air-tightly sealed. Assuming now that the length of the end 12 is taken as (l) and the thickness as (t), the tensile snapping strength is satisfied if l/t being over approximately 1.5 and satisfactorily bearable to the thermal shock if under 2.5. Though the values are fluctuated more or less depending upon a quality of the glass and a dimension of the inside diameter, the device in high reliability can be obtained.

8. 发明专利

JPS5691440A METHOD FOR EVALUATING AND PRODUCING SEMICONDUCTOR CRYSTAL 失效
公开(公告)号：JPS5691440A
公开(公告)日：1981-07-24
申请号：JP16837479
申请日：1979-12-26
申请人： HITACHI LTD
发明人： KUWATANI SETSUO , MOROSHIMA HEIJI , TANBARA HIDEO , FUJITA MASATO , ISHII SEIICHI
IPC分类号： H01L21/66 , G01R31/28
摘要： PURPOSE:To evaluate a crystal accurately from its impurity distribution by providing the measuring terminals of P-N junctions or Schottky barriers on the measured surface of a semiconductor crystal to obtain capacitance-voltage characteristics and computing the depth of a depletion layer and the concentration of immurities from the results. CONSTITUTION:When evaluting a crystal for a varicap diode, an N type Si substrate with an N type epitaxial layer 1 is prepared and an oxide film 3 with openings 4 is formed over the epitaxial layer 1. Four of such openings positioning at the apexes of a square are grouped into one set and five sets are provided in the center and the peripheral parts of the quarters of the wafer. P type regions 5 are provided in the epitaxial layer through the openings and C-V characteristics are measured with a measuring electrode. The concentration of impurities and the depth of a depletion layer are computed from the characteristics and impurity distribution is determined. And from the results of the five positions, the wafer is judged to be good or bad. By so doing, the accuracy of evaluating crystals is improved and their available percentage can be increased. Schottky barrier diodes can also be evaluated in the same way.

9. 发明专利

JPS5685872A DIODE ARRAY 失效
公开(公告)号：JPS5685872A
公开(公告)日：1981-07-13
申请号：JP16153279
申请日：1979-12-14
申请人： HITACHI LTD
发明人： MOROSHIMA HEIJI , TERAKADO HAJIME , NAITOU MASAYA
IPC分类号： H01L25/11 , H01L29/861 , H01L29/91
摘要： PURPOSE:To obtain a diode array having desired number of elements by arranging a plurality of diodes having equal characteristics at an equal interval, fixing the ends of the lead wires projected from these diodes with cladding tape, conducting the common leads of the respective diodes with a shortcircuit bar using conductors and sealing them. CONSTITUTION:A plurality of diodes 1 having equal characteristics are arranged at an equal interval in parallel with each other while directing the polarity display formed on a sealer 2 in the same direction, and then ends of lead wires 3 projected at both ends thereof are fixed with cladding tape formed of tapes 4 and 5. Subsequently, the common lead wires of the respective diodes are conducted with shortcircuit bars 6 using conductors 7, and a sealer 2 is integrated with an auxiliary sealer 8 using resin. Thus, desired diode array 9 is formed, and when using it, the tapers 4 and 5 are pulled and exfoliated. That is, the array is simplified into a sole unit, thereby shortening the mounting time period of the array in use.

10. 发明专利

JPS5662376A SCHOTTKY DIODE 失效
公开(公告)号：JPS5662376A
公开(公告)日：1981-05-28
申请号：JP13763979
申请日：1979-10-26
申请人： HITACHI LTD
发明人： SATOU AKIHIRO , MOROSHIMA HEIJI
IPC分类号： H01L29/47 , H01L29/872 , H01L29/91
摘要： PURPOSE:To avoid a decay of counter flow current and to improve a reliability of a diode by a method wherein an electrode layer made of metal having a good contact junction characteristic against Ti is formed on W film through Ti film covering surface and circumferential edges. CONSTITUTION:A part of Ti film 6 is contacted at the P type Si base board 1 at a circumference of W film 3 to form a barrier. Then, a work function phiB of Ti/P-Si is higher phiB=0.65 of W/P-Si. When an area of W at its central part is sufficiently high, it is acted as Schottky barrier diode, Ti at the circumference forms a barrier having a high barrier potential, a junction with SiO2 is improved, so that no decay of counter flow current or poor short circuit may be found.

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