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1. 发明专利

JP2001044387A MANUFACTURE FOR SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE 失效
公开(公告)号：JP2001044387A
公开(公告)日：2001-02-16
申请号：JP21307399
申请日：1999-07-28
申请人： HITACHI LTD
发明人： SUGAWARA YASUHIRO , IIJIMA SHINPEI , OJI YUZURU , YAMAMOTO NAOKI , FUKUDA NAOKI , JINBO TOMOKO , ISHII YUKINO , TANABE YOSHIKAZU
IPC分类号： H01L27/108 , H01L21/8242
摘要： PROBLEM TO BE SOLVED: To prevent a metal lower electrode of an underlayer from oxidizing, when annealing for modifying and crystallizing a high dielectric film composed of a crystalline metal oxide deposited in an upper part of the lower electrode of a capacity element constituted of a metal. SOLUTION: After a capacity insulting film structured of a tantalum oxide film 28 is deposited on the upper part of the lower electrode of a capacity element structured of a W film 26, annealing is connected in a hydrogen plus nitrous oxide mixed gas ambience, thereby restricting oxidization of the W film 26, while modifying and crystallizing the tantalum oxide film 28.

2. 发明专利

JPH11317458A MANUFACTURE OF SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE 失效
公开(公告)号：JPH11317458A
公开(公告)日：1999-11-16
申请号：JP12436598
申请日：1998-05-07
申请人： HITACHI LTD
发明人： HIRAIWA ATSUSHI , OJI YUZURU , SAKUMA KAZUKI , SUZUKI NORIO , KANDA TAKAYUKI , TAKAHASHI KENJI , SHIMIZU HIROBUMI , SAKAI SATORU
IPC分类号： H01L21/336 , H01L21/8234 , H01L27/088 , H01L29/78
摘要： PROBLEM TO BE SOLVED: To reduce the occurrences of defects in a gate insulating film by forming gate insulating films, having different thicknesses on a single-crystal semiconductor layer after the semiconductor layer is formed on a semiconductor substrate by the epitaxial method. SOLUTION: After a single-crystal semiconductor layer 1e is formed on a semiconductor substrate 1s by the epitaxial method without through an element forming process, gate insulating films 16i1 and 16i2 having relatively different thicknesses are formed on the epitaxial layer 1e containing very few crystal defects. Consequently, the occurrences of the defects in the gate insulating film 16i1 can be reduced in the forming process of the gate insulating films 16i1 and 16i2. Thus the decomposition of a defect in the gate insulating film 16i1 into such a serious defect that causes insulation breakdown of the insulating film 16i1 can be suppressed, in the course of cleaning treatment which is performed before second gate oxidation in the process of forming the two kinds of gate insulating films. Therefore, the possibility of the gate insulating films 16i1 and 16i2 causing insulation breakdown can be reduced.

3. 发明专利

JPH11121713A SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND MANUFACTURE THEREOF 失效
公开(公告)号：JPH11121713A
公开(公告)日：1999-04-30
申请号：JP28096397
申请日：1997-10-14
申请人： HITACHI LTD
发明人： NAKANISHI SHIGEHIKO , KOBAYASHI NOBUYOSHI , OJI YUZURU , IIJIMA SHINPEI , SUGAWARA YASUHIRO , KANAI MISUZU
IPC分类号： H01L27/108 , H01L21/02 , H01L21/314 , H01L21/316 , H01L21/8242 , H01L27/10 , H01L29/76 , H01L29/94 , H01L31/119
摘要： PROBLEM TO BE SOLVED: To secure the capacitance of the capacitor of the memory cells on and after 256 Mbit DRAM. SOLUTION: This semiconductor integrated circuit device is series-connected to the memory cell switching MISFETQs formed on the major surface of a semiconductor substrate 1, and the device includes a DRAM having a memory cell composed of an information storage capacitor C provided with a lower electrode 54, a capacitor insulating film 58 and an upper electrode 59. In this case, the lower electrode 54 is formed by the conductive material which is mainly composed of ruthenium dioxide (RuO2 ), and the capacitor insulating film 58 is formed by crystallized tantalum pentoxide.

4. 发明专利

JPH1126712A SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE, METHOD, AND DEVICE FOR MANUFACTURING THE SAME 失效
公开(公告)号：JPH1126712A
公开(公告)日：1999-01-29
申请号：JP17268497
申请日：1997-06-30
申请人： HITACHI LTD
发明人： IIJIMA SHINPEI , SUGAWARA YASUHIRO , OYU SHIZUNORI , ASANO ISAMU , TAMARU TAKESHI , KUNITOMO MASATO , NAKADA MASAYUKI , OJI YUZURU
IPC分类号： H01L21/8242 , H01L27/108
摘要： PROBLEM TO BE SOLVED: To reduce a leakage current of an information storage capacitance element. SOLUTION: A lower electrode 60 constituting an information storage capacitance element C is made of a polycrystal silicon film formed by solid phase crystallization of a deposited amorphous silicon film. A CMP method is used for working the lower electrode 60. A capacitance insulating film 61 constituting the information storage capacitance element C is made of a silicon nitride film and a polycrystal tantalum oxide film. The silicon nitride film is formed by a CVD method. The tantalum oxide film is formed by depositing an amorphous tantalum oxide film by a CVD method and then thermally treating the tantalum oxide film in an oxidative atmosphere. In addition, an upper electrode 62 constituting the information storage capacitance element C is made of a titanium nitride film formed by a CVD method. The intrinsic stress of the titanium nitride film is caused to be not more than 1 GPa.

5. 发明专利

JPH08316162A SEMICONDUCTOR PRODUCING APPARATUS 失效
公开(公告)号：JPH08316162A
公开(公告)日：1996-11-29
申请号：JP11426995
申请日：1995-05-12
申请人： HITACHI LTD
发明人： KANEKO YUTAKA , OJI YUZURU , USHIYAMA MASAHIRO , KANETOMO MASABUMI , MATSUSHIMA MASARU , INO TADAO
IPC分类号： C23C16/44 , C23C16/455 , H01L21/205 , H01L21/22
摘要： PURPOSE: To produce high-performance semiconductor elements the quality of which is less dispersed, by making uniform the flow of a gas in a reaction chamber of a semiconductor producing apparatus, high-vacuum quick exhaustion and cleaning thereof. CONSTITUTION: A semiconductor producing apparatus comprises a double- structured reactor having a vacuum chamber 1 and reaction chamber 2 disposed therein, an entrance system 6 to feed a reactive gas into the chamber 2 contacted with the surface of a semiconductor wafer 5 isolated from the chamber 1, an entrance system 7 to feed an inert gas into the chamber with which the back side of the wafer 5 contacts, a semiconductor wafer heater disposed outside the chamber 2 and means for individually evacuating the chambers 1 and 2.

6. 发明专利

JPH0831962A MANUFACTURE OF NON-VOLATILE SEMICONDUCTOR STORAGE 失效
公开(公告)号：JPH0831962A
公开(公告)日：1996-02-02
申请号：JP16181794
申请日：1994-07-14
申请人： HITACHI LTD
发明人： USHIYAMA MASAHIRO , OJI YUZURU , KUME HITOSHI , NISHIMOTO TOSHIAKI , KOMORI KAZUHIRO
IPC分类号： H01L21/8247 , H01L27/115 , H01L29/788 , H01L29/792
摘要： PURPOSE:To achieve an interlayer insulation film which has a low formation temperature and prevents gate insulation film characteristics from deteriorating by forming a single-layer silicon oxide film as the interlayer insulation film by a chemical vapor growth method. CONSTITUTION:The storage is provided with a floating gate electrode 5 being provided on a semiconductor substrate 1 via a gate insulation film 4 and a control gate electrode 7 being provided on the floating gate electrode 5 via an interlayer insulation film 6 where at least one portion is laminated. Also, the semiconductor substrate 1 is in first conductive-type and mutually separated second conductive-type source 8 and drain 9 are provided in the substrate 1. Then, acid silicon nitride film or silicon oxide film is formed as the interlayer insulation film 6 by the chemical vapor growth method, thus suppressing the generation of the level in the gate insulation film 4 due to a high electric field stress and improving the writing reliability and charge retention life in the storage.

7. 发明专利

JPH07193059A MANUFACTURE OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH07193059A
公开(公告)日：1995-07-28
申请号：JP33052793
申请日：1993-12-27
申请人： HITACHI LTD
发明人： USHIYAMA MASAHIRO , MINE TOSHIYUKI , OJI YUZURU
IPC分类号： H01L21/8247 , H01L21/265 , H01L21/314 , H01L21/316 , H01L29/788 , H01L29/792
摘要： PURPOSE:To lower an insulating film forming temperature, suppress the fluctuation of an impurity distribution and suppress the generation of crystal defects in an Si substrate by a method wherein the mixture of oxidizing gas containing at least on among N2O, NO and NO2 and non-reactive gas is used as insulating film forming gas. CONSTITUTION:When an Si substrate is oxidized with oxidizing gas such as N2O, NO or NO2, the oxidizing gas is diluted with non-reactive or non-oxidizing gas such as N2, Ar or He. With this constitution, a lowered oxidation temperature can be realized. For instance, a p-type Si substrate 11 on which an element isolation oxide film 12 is formed and an Si surface 13 to be oxidized is exposed is subjected to pyrogenic oxidation with H2 gas and O2 gas at 850 deg.C to form an SiO2 film and then put into an enclosed resistance-heating furnace to be heated at 1000 deg.C while respective required quantities of N2 and N2O are introduced to increase the oxide film thickness by 1.5nm and a gate insulating film 13 is formed. Thus, the mismatching in the boundary between the semiconductor substrate and the insulating film can be relieved.

8. 发明专利

JPH07169917A MANUFACTURE OF CAPACITOR 失效
公开(公告)号：JPH07169917A
公开(公告)日：1995-07-04
申请号：JP31626493
申请日：1993-12-16
申请人： HITACHI LTD , HITACHI VLSI ENG
发明人： HIRAYAMA MISUZU , NAKADA MASAYUKI , IIJIMA SHINPEI , YOKOYAMA NATSUKI , OJI YUZURU , KISU TERUAKI , MATSUI YUICHI
IPC分类号： H01L27/04 , H01L21/20 , H01L21/26 , H01L21/316 , H01L21/324 , H01L21/822 , H01L21/8242 , H01L27/108
摘要： PURPOSE:To form a high capacity and high pressure resistant capacitor by using a high dielectric oxidative tantalum film. CONSTITUTION:After an oxidative tantalum layer 5 is formed on a first electrode extending on a first insulation film formed on a silicon substrate 1, first heat treatment is carried out at temperatures of 600 deg.C or above and less than 750 deg.C under an oxygen or oxygen dinitride atmosphere or oxygen or oxygen dinitride atmosphere diluted with argon or nitrogen at the concentration of 0.1% and above. Then, the second heat treatment is carried out at a higher temperature than the first heat treatment, and under an inactive atmosphere, such as argon or nitrogen or oxygen or oxygen dinitride atmosphere diluted below 0.1% with argon or nitrogen, thereby crystallizing the oxidative layer 5. Then, the second electrode 6 is formed on the oxidative tantalum layer, thereby producing a capacitor.

9. 发明专利

JPH07161641A VAPOR GROWTH OF THIN FILM 失效
公开(公告)号：JPH07161641A
公开(公告)日：1995-06-23
申请号：JP30376993
申请日：1993-12-03
申请人： HITACHI LTD
发明人： KUMIHASHI KOSEI , IZAWA MASARU , WAKAHARA YOSHIFUMI , OJI YUZURU
IPC分类号： H01L21/205 , H01L21/8242 , H01L27/10 , H01L27/108
摘要： PURPOSE:To form a thin film with the uniform direction of a crystal axes and a single crystal thin film from a first growth layer by a method wherein after a periodic surface roughened structure of a height in a specified range of a specified period is formed at the specified period, a vapor growth of the thin films is performed. CONSTITUTION:A periodic surface roughened structure of a height of 20% or higher to 100% or lower at a period 10 times or longer to 100 times or shorter than that of a lattice in the layer direction of a thin film is formed on the surface of a base layer 1. Then, when an Ar ion beam 3 is emitted on the surface of this SiO2 roughened structure 2 at an incident angle of one degree, unbounded atoms, which are used as growth nuclei sites 4, are formed on the projected parts of the structure 2. Then, the growth rate of the thin film is slowed down at a low pressure and a growth temperature is made high, whereby the Si thin film 6 is formed. Here, the feed of SiH4 gas is once stopped to perform a heat treatment, whereby coalescence of fellow growth nuclei is caused and an Si (100) single crystal thin film 7, which is single crystal grown from a first growth layer, can be obtained.

10. 发明专利

JPH06216391A SEMICONDUCTOR MEMORY WITH FERROELECTRIC THIN FILM 失效
公开(公告)号：JPH06216391A
公开(公告)日：1994-08-05
申请号：JP387793
申请日：1993-01-13
申请人： HITACHI LTD
发明人： MIKI HIROSHI , OJI YUZURU , TAJI SHINICHI
IPC分类号： H01L21/8247 , H01L29/788 , H01L29/792
摘要： PURPOSE:To provide a semiconductor device in which miniaturization is facilitat ed and unevenness of characteristics is small. CONSTITUTION:Before manufacturing a ferroelectric thin film, a sidewall fixed film 102 formed of an insulator having extremely low permittivity than that of ferroelectric element is manufactured. A ferroelectric thin film 103 is formed on a base in which the films film exists, crystallized and heat treated. Accordingly, a pattern of the element is formed by overall etching, and a superposing allowance is eliminated. A film oriented in a desired surface direction can be obtained irrespective of a depositing method, a base electrode, heat treating conditions.

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