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1. 发明专利

JP2014044298A Rinse agent for lithography, method for forming resist pattern, and method for manufacturing semiconductor device 有权
标题翻译：用于光刻的RINSE代理，形成电阻图案的方法和制造半导体器件的方法
公开(公告)号：JP2014044298A
公开(公告)日：2014-03-13
申请号：JP2012186452
申请日：2012-08-27
申请人： Fujitsu Ltd , 富士通株式会社
发明人： KOZAWA MIWA , KON JUNICHI , NOZAKI KOJI
IPC分类号： G03F7/32 , H01L21/027
CPC分类号： G03F7/422 , G03F7/40 , H01L21/0206 , H01L21/308 , H01L21/76802
摘要： PROBLEM TO BE SOLVED: To provide a rinse agent or the like for lithography which suppresses resist pattern collapse in rinsing after development of resist pattern formation, and further can improve LWR (Line Width Roughness) without a change in the size of the resist pattern more than necessary.SOLUTION: A rinse agent for lithography contains at least straight chain alkanediol having 6 to 8 carbon atoms and water.
摘要翻译：要解决的问题：提供一种用于光刻的漂洗剂等，其在抗蚀剂图案形成开发之后抑制漂洗中的抗蚀剂图案塌陷，并且还可以在不改变抗蚀剂图案尺寸的情况下提高LWR（线宽粗糙度）非常必要。解决方案：用于光刻的漂洗剂至少包含具有6至8个碳原子的直链链烷二醇和水。

2. 发明专利

JP2012174775A Compound semiconductor device manufacturing method and cleaning agent 有权
标题翻译：化合物半导体器件制造方法和清洁剂
公开(公告)号：JP2012174775A
公开(公告)日：2012-09-10
申请号：JP2011033240
申请日：2011-02-18
申请人： Fujitsu Ltd , 富士通株式会社
发明人： KON JUNICHI
IPC分类号： H01L21/304 , C11D3/20 , C11D3/37 , C11D3/395 , C11D3/43 , C11D7/22 , C11D7/26 , C11D7/50 , C11D7/54 , H01L21/027 , H01L21/336 , H01L21/338 , H01L29/423 , H01L29/49 , H01L29/778 , H01L29/78 , H01L29/786 , H01L29/812
CPC分类号： C11D11/0047 , C11D7/5013 , C11D7/5022 , H01L29/2003 , H01L29/66462 , H01L29/7787
摘要： PROBLEM TO BE SOLVED: To provide a compound semiconductor device manufacturing method and a cleaning agent which can appropriately remove residue occurring in processing associated with formation of a recess and the like.SOLUTION: A compound semiconductor lamination structure 1 is formed and a part of the compound semiconductor lamination structure 1 is removed to form a recess 4 and the inside of the recess 4 is cleansed by using a cleaning agent. The cleaning agent contains a base material resin which is compatible with residue occurring in the recess 4, and a solvent.
摘要翻译：解决的问题：提供一种化合物半导体器件的制造方法和清洗剂，能够适当地除去与形成凹部等相关的加工中发生的残留物。解决方案：形成化合物半导体层压结构1，并且去除化合物半导体层叠结构1的一部分以形成凹部4，并且通过使用清洁剂清洁凹部4的内部。清洗剂含有与在凹部4中发生的残渣相容的基材树脂和溶剂。版权所有（C）2012，JPO＆INPIT

3. 发明专利

JP2011164183A Display device 审中-公开
标题翻译：显示设备
公开(公告)号：JP2011164183A
公开(公告)日：2011-08-25
申请号：JP2010024015
申请日：2010-02-05
申请人： Fujitsu Ltd , 富士通株式会社
发明人： KITADA HIDEKI , NAKADA YOSHIHIRO , KON JUNICHI , NAKAMURA TETSUKAZU , AOKI TAKESHI , MIYAJIMA TOYOO , WATANUKI TSUNEO , FUKUDA MAKOTO , TOMITA JUNJI
IPC分类号： G02F1/1343 , G02F1/13 , G02F1/1333 , G02F1/167
摘要： PROBLEM TO BE SOLVED: To provide a display device having a transparent electrode and capable of improving yield of its manufacture. SOLUTION: The display device is constituted by forming a plurality of opening parts formed along the direction of extension on the transparent electrode extended and formed on a transparent substrate and arranged in a plurality of rows with respect to the direction of width, arranging a counter substrate having a counter electrode, and nipping and holding a display substance between the transparent substrate and the counter substrate. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供一种具有透明电极并能够提高其制造成品率的显示装置。解决方案：显示装置通过在透明电极上延伸形成沿着延伸方向形成的多个开口部分，形成在透明基板上并相对于宽度方向布置成多行，布置具有对电极的对置基板，并且在透明基板和对置基板之间夹持并保持显示物质。版权所有（C）2011，JPO＆INPIT

4. 发明专利

JP2010020856A Magnetic head manufacturing method and information storage device 审中-公开
标题翻译：磁头制造方法和信息存储装置
公开(公告)号：JP2010020856A
公开(公告)日：2010-01-28
申请号：JP2008181910
申请日：2008-07-11
申请人： Fujitsu Ltd , 富士通株式会社
发明人： KOJIMA TAKASHI , IKEGAWA YUKINORI , KON JUNICHI , AOKI TAKESHI
IPC分类号： G11B5/31
摘要： PROBLEM TO BE SOLVED: To provide a magnetic recording head manufacturing method that forms reversed trapezoidal main poles of a narrow pattern width.
SOLUTION: The magnetic recording head manufacturing method includes steps of: forming, on a base plate, a resist layer having a reversed trapezoidal groove at the end to face the medium; applying first ashing to the resist layer, shrinking the resist layer to reduce the groove dimension in the core width direction, and forming a magnetic material layer in the groove to make the recording magnetic pole.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供形成窄图案宽度的反向梯形主极的磁记录头制造方法。解决方案：磁记录头制造方法包括以下步骤：在底板上形成具有反向梯形槽的抗蚀剂层，该抗蚀层在端部处面向介质; 对抗蚀剂层施加第一灰化，使抗蚀剂层收缩以减小芯宽度方向上的凹槽尺寸，并在凹槽中形成磁性材料层以制成记录磁极。版权所有（C）2010，JPO＆INPIT

5. 发明专利

JP2009130170A Method of manufacturing semiconductor device and method of manufacturing mask 有权
标题翻译：制造半导体器件的方法和制造掩模的方法
公开(公告)号：JP2009130170A
公开(公告)日：2009-06-11
申请号：JP2007304228
申请日：2007-11-26
申请人： Fujitsu Ltd , 富士通株式会社
发明人： KON JUNICHI
IPC分类号： H01L21/027 , G03F7/40 , H01L21/28
摘要： PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device that prevents a resist pattern shape from becoming an inverted tapered shape, while a resist sidewall is prevented from being rounded and a resist bottom opening is prevented from varying in opening length, and to provide a method of manufacturing a mask. SOLUTION: The method of manufacturing the semiconductor device includes a resist film forming step of forming a resist film on a substrate, an exposure light irradiating step of selectively irradiating the resist film formed on the substrate with exposure light, a developing step of developing the resist film irradiated with the exposure light to form an opening in the resist film, a shape control film forming step of forming a shape control film on the resist film and in the opening, and a baking step of heating the resist film and shape control film, the elastic modulus of the shape control film being higher than that of the resist film at heating temperature of the baking step. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种制造半导体器件的方法，该半导体器件防止抗蚀剂图案形状变成倒锥形，同时防止抗蚀剂侧壁变圆，并且防止抗蚀剂底部开口在开口中变化长度，并提供制造掩模的方法。解决方案：半导体器件的制造方法包括在基板上形成抗蚀剂膜的抗蚀剂膜形成步骤，曝光光选择性地照射形成在基板上的抗蚀剂膜的曝光光照射步骤，显影步骤显影用曝光光照射的抗蚀剂膜，以在抗蚀剂膜中形成开口;形成控制膜形成步骤，在抗蚀剂膜和开口中形成形状控制膜;以及烘烤步骤，加热抗蚀剂膜和形状控制膜，在烘烤步骤的加热温度下，形状控制膜的弹性模量高于抗蚀剂膜的弹性模量。版权所有（C）2009，JPO＆INPIT

6. 发明专利

JP2008083196A Resist composition, resist pattern forming method and method for manufacturing semiconductor device 有权
标题翻译：电阻组合物，电阻图案形成方法和制造半导体器件的方法
公开(公告)号：JP2008083196A
公开(公告)日：2008-04-10
申请号：JP2006260836
申请日：2006-09-26
申请人： Fujitsu Ltd , 富士通株式会社
发明人： KON JUNICHI
IPC分类号： G03F7/004 , G03F7/039 , H01L21/027
CPC分类号： G03F7/0382 , G03F7/0045 , G03F7/0392 , G03F7/2059 , H01L27/105 , H01L27/11526 , H01L27/11543
摘要： PROBLEM TO BE SOLVED: To provide a resist composition which suppresses occurrence of shape anomaly and can form a fine and high-definition resist pattern with good dimensional accuracy, and to provide a resist pattern forming method by which a fine and high-definition resist pattern can be efficiently formed with good dimensional accuracy, and a method for manufacturing a semiconductor device. SOLUTION: The resist composition comprises at least a base resin, a photoacid generator, a first additive and a second additive, wherein the pKa of the second additive is larger than that of the first additive, and at a resist film formation temperature, the vapor pressure of the second additive is lower than that of the first additive. The resist pattern forming method includes: at least a resist film forming step of forming a resist film by applying and heating the resist composition on a surface to be processed; an irradiation step of selectively irradiating the resist film with ionizing radiation; a heating step of hating the resist film irradiated with the ionizing radiation; and a development step of developing the resist film. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：解决问题：提供抑制形状异常发生的抗蚀剂组合物，能够形成尺寸精度良好的精细高分辨抗蚀剂图案，并提供抗蚀图案形成方法，能够以良好的尺寸精度有效地形成定义抗蚀剂图案，以及半导体装置的制造方法。抗蚀剂组合物至少包含基础树脂，光致酸产生剂，第一添加剂和第二添加剂，其中第二添加剂的pKa大于第一添加剂的pKa，并且在抗蚀剂膜形成温度，第二添加剂的蒸气压低于第一添加剂的蒸气压。抗蚀剂图案形成方法包括：至少一个抗蚀剂膜形成步骤，通过在抗蚀剂组合物的表面上涂覆和加热来形成抗蚀剂膜; 照射步骤，用电离辐射选择性地照射抗蚀剂膜; 使用电离辐射照射的抗蚀剂膜的加热步骤; 以及显影抗蚀膜的显影步骤。版权所有（C）2008，JPO＆INPIT

7. 发明专利

JP2006276443A Resist cover film forming material, forming method for resist pattern, and semiconductor device and its manufacturing method 有权
标题翻译：电阻膜形成材料，电阻型图案的形成方法和半导体器件及其制造方法
公开(公告)号：JP2006276443A
公开(公告)日：2006-10-12
申请号：JP2005095302
申请日：2005-03-29
申请人： Fujitsu Ltd , 富士通株式会社
发明人： YANO EI , KON JUNICHI , CHIBA HIROSHI
IPC分类号： G03F7/11 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide a resist cover film forming material which is suitably usable for a resist cover film for liquid immersion exposure and can make a surface be exposed hydrophobic, a forming method for a resist pattern in which a fine high-precision resist pattern effectively protecting the resist film from liquid for liquid immersion exposure and enabling high-precision exposure without spoiling the function of the resist film can efficiently be formed, etc. SOLUTION: In the forming method for the resist pattern, the resist cover film is formed on a film having at least the resist film after the film having the resist film is formed on a surface to be processed, the resist cover film is formed by using the resist film forming material decreasing the surface energy of the surface to be exposed by ≥20 mN/m before and after the resist cover film is formed, and the resist film is irradiated with exposure light by liquid immersion exposure through the resist cover film and developed. The An aspect is preferable where the resist cover film forming material contains an amphiphilic substance. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：为了提供适合用于浸渍曝光用抗蚀剂覆盖膜的抗蚀剂覆盖膜形成材料，并且可以使表面暴露于疏水性，抗蚀剂图案的形成方法为细高可以有效地形成抗蚀剂图案，有效地保护抗蚀剂膜免受液体浸渍的影响，并且能够高效地形成抗蚀剂膜的功能，从而能够高精度地曝光抗蚀剂膜的功能。解决方案：在抗蚀图案的形成方法中，在具有抗蚀剂膜的膜形成在被处理表面上之后，至少形成抗蚀剂膜的抗蚀剂覆盖膜形成在抗蚀剂覆盖膜上，通过使用抗蚀剂膜形成材料来形成抗蚀剂覆盖膜，在形成抗蚀剂覆盖膜之前和之后，要暴露于≥20mN/ m的表面，并且通过浸渍曝光通过抗蚀剂覆盖物fi曝光抗蚀剂膜并开发。在抗蚀剂覆盖膜形成材料含有两亲物质的情况下，优选An方面。版权所有（C）2007，JPO＆INPIT

8. 发明专利

JP2003330168A Resist composition, method for manufacturing resist pattern and method for manufacturing semiconductor device 审中-公开
标题翻译：耐蚀组合物，制造电阻图案的方法和制造半导体器件的方法
公开(公告)号：JP2003330168A
公开(公告)日：2003-11-19
申请号：JP2002139312
申请日：2002-05-14
申请人： Fujitsu Ltd , 富士通株式会社
发明人： NAMIKI TAKAHISA , NOZAKI KOJI , OZAWA YOSHIKAZU , KON JUNICHI
IPC分类号： G03F7/004 , G03F7/38 , H01L21/027
CPC分类号： B82Y30/00
摘要： PROBLEM TO BE SOLVED: To provide a resist composition capable of easily forming a resist pattern of high accuracy, to provide a method for manufacturing the resist pattern which is easy and has a small number of stages and excellent manufacturing efficiency and to provide a method for manufacturing a semiconductor device and the like. SOLUTION: The resist composition contains an additive having at least either of an aromatic hydrocarbon and an alicyclic hydrocarbon in the chemical structure thereof and sublimation properties and a resin having etching durability lower than that of the additive and capable of reacting with the additive. A form in which the additive and the resin can be bonded to each other by a hydrolysis reaction when exposed to light, a form in which the alicyclic hydrocarbon is either of adamantane and fullerene and the like are preferable. In the method for manufacturing the resist pattern, the resist composition is applied to form a coating film, the coating film is exposed to light in a pattern shape and then dry etching is performed. The method for manufacturing the semiconductor device at least comprises that the resist pattern is formed by the method for manufacturing the resist pattern. COPYRIGHT: (C)2004,JPO
摘要翻译：解决的问题：为了提供能够容易地形成高精度的抗蚀剂图案的抗蚀剂组合物，提供一种制造抗蚀剂图案的方法，该方法容易且具有少量的级数和优异的制造效率，并提供半导体装置的制造方法等。解决方案：抗蚀剂组合物含有在其化学结构中具有芳族烃和脂环烃中的至少一种和升华性质的添加剂和具有比添加剂低的蚀刻耐久性并能够与添加剂反应的树脂。优选其中添加剂和树脂在暴露于光时可以通过水解反应彼此结合的形式，其中脂环族烃是金刚烷和富勒烯等的形式是优选的。在抗蚀剂图案的制造方法中，涂布抗蚀剂组合物以形成涂膜，将涂膜曝光成图案形状的光，然后进行干法蚀刻。半导体器件的制造方法至少包括通过抗蚀剂图案的制造方法形成抗蚀剂图案。版权所有（C）2004，JPO

9. 发明专利

JP2003142369A METHOD FOR CONTROLLING SIZE OF RESIST PATTERN 审中-公开
公开(公告)号：JP2003142369A
公开(公告)日：2003-05-16
申请号：JP2001334266
申请日：2001-10-31
申请人： FUJITSU LTD
发明人： NAMIKI TAKAHISA , NOZAKI KOJI , OZAWA YOSHIKAZU , KON JUNICHI , YANO EI
IPC分类号： G03F7/40 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide a method for controlling the size of a resist pattern capable of controlling the dimensional change of the pattern with high accuracy and good reproducibility due to the change of the simple processing condition. SOLUTION: The method for controlling the size of the resist pattern comprises a step of forming the resist film 12 having a predetermined pattern on a silicon wafer 10, a step of forming a chemical layer 18 by coating a chemical which reacts with the film 12 by a spin coating method on the wafer 10 formed with the film 12, and a step of changing the size of the pattern by reacting the chemical of a resist retaining part 14 with that of the layer 18. Thus, the coating conditions of coating the chemical by the spin coating method are controlled to control the change amount of the size of the pattern.

10. 发明专利

JP2000131848A RESIST COMPOSITION AND METHOD FOR FORMING MICROPATTERN 失效
公开(公告)号：JP2000131848A
公开(公告)日：2000-05-12
申请号：JP14205199
申请日：1999-05-21
申请人： FUJITSU LTD
发明人： NAMIKI TAKAHISA , YANO EI , WATABE KEIJI , KON JUNICHI
IPC分类号： H01L21/027 , G03F7/004 , G03F7/039
摘要： PROBLEM TO BE SOLVED: To provide a resist composition capable of enhancing contrast by incorporating a polymer to be allowed to increase its solubility in an alkaline developing solution by application of radiation and a contrast booster having a specified substituent in the molecule. SOLUTION: The resist composition contains the polymer to be allowed to increase its solubility in the alkaline developing solution by application of radiation and the contrast booster having the substituent represented by the formula in which X is a halogen atom; and each of R1 and R2 is, independently, an H atom or an alkyl or phenyl group. This micropattern forming method comprises a process for coating the surface of a substrate with this resist composition to form a resist film; a process for selectively exposing the resist film, a process for heat treating it after the heat treatment, and a process for developing the resist film with the alkaline developing solution.

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