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1. 发明专利

JP2013077620A Compound semiconductor device and manufacturing method of the same 有权
标题翻译：化合物半导体器件及其制造方法
公开(公告)号：JP2013077620A
公开(公告)日：2013-04-25
申请号：JP2011215197
申请日：2011-09-29
申请人： Fujitsu Ltd , 富士通株式会社
发明人： OKAMOTO NAOYA , MAKIYAMA KOZO , TAGI TOSHIHIRO , MINOURA YUICHI , OZAKI SHIRO , MIYAJIMA TOYOO
IPC分类号： H01L21/28 , H01L21/283 , H01L21/338 , H01L29/778 , H01L29/812 , H03F3/21
CPC分类号： H01L21/31144 , H01L21/28 , H01L21/28581 , H01L23/291 , H01L23/3171 , H01L29/2003 , H01L29/205 , H01L29/42316 , H01L29/432 , H01L29/475 , H01L29/7786 , H01L29/7787 , H01L29/872 , H01L2924/0002 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a highly-reliable and high-voltage compound semiconductor device which prevents an electrode material from reaching a boundary between an electrode an a compound semiconductor layer and prevents deterioration in gate characteristics.SOLUTION: A compound semiconductor device comprises: a compound semiconductor laminate structure 2; a passivation film 6 formed on the compound semiconductor laminate structure 2 and having a pass-through opening 6a; and a gate electrode 7 formed on the passivation film 6 so as to fill the pass-through opening 6a. In the gate electrode 7, crystal grain boundaries 101 between crystal arrays different from each other are formed. A starting point of each crystal grain boundary 101 is positioned on a flat surface of the passivation film 6 away from the pass-through opening 6a.
摘要翻译：要解决的问题：提供一种高可靠性和高电压的化合物半导体器件，其防止电极材料到达化合物半导体层的电极之间的边界并防止栅极特性的劣化。解决方案：化合物半导体器件包括：化合物半导体层叠结构2; 形成在化合物半导体层叠结构体2上并具有贯通孔6a的钝化膜6; 以及形成在钝化膜6上以填充直通开口6a的栅电极7。在栅电极7中，形成彼此不同的晶体阵列之间的晶粒边界101。每个晶粒边界101的起点位于钝化膜6的远离通过开口6a的平坦表面上。版权所有（C）2013，JPO＆INPIT

2. 发明专利

JP2012089677A Semiconductor device and manufacturing method for semiconductor device 有权
标题翻译：半导体器件的半导体器件和制造方法
公开(公告)号：JP2012089677A
公开(公告)日：2012-05-10
申请号：JP2010234961
申请日：2010-10-19
申请人： Fujitsu Ltd , 富士通株式会社
发明人： OZAKI SHIRO , KANEMURA MASAHITO , NAKAMURA TETSUKAZU , MIYAJIMA TOYOO , TAKEDA MASAYUKI , WATABE KEIJI , YOSHIKAWA SHUNEI , IMANISHI KENJI , TAGI TOSHIHIRO , IMADA TADAHIRO
IPC分类号： H01L21/338 , H01L21/205 , H01L21/316 , H01L29/778 , H01L29/78 , H01L29/786 , H01L29/812
CPC分类号： H01L29/517 , H01L21/0228 , H01L23/291 , H01L29/2003 , H01L29/41766 , H01L29/4236 , H01L29/42376 , H01L29/518 , H01L29/66462 , H01L29/7786 , H01L29/7787 , H01L2924/0002 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To prevent drop of dielectric voltage in a structure where a protection film is formed on an insulation film.SOLUTION: A semiconductor device includes a first semiconductor layer formed on a substrate, a second semiconductor layer formed on the first semiconductor layer, a source electrode and a drain electrode formed on the second semiconductor layer, an insulation film formed on the second semiconductor layer, a gate electrode formed on the insulation film, and a protection film formed covering the insulation film. The protection film is formed by any of thermal CVD, thermal ALD, and vacuum evaporation.
摘要翻译：要解决的问题：为了防止在绝缘膜上形成保护膜的结构中的介电电压下降。解决方案：半导体器件包括形成在衬底上的第一半导体层，形成在第一半导体层上的第二半导体层，形成在第二半导体层上的源电极和漏电极，形成在第二半导体层上的绝缘膜半导体层，形成在绝缘膜上的栅极电极以及覆盖该绝缘膜的保护膜。保护膜由热CVD，热ALD和真空蒸发中的任何一种形成。版权所有（C）2012，JPO＆INPIT

3. 发明专利

JP2013247153A Semiconductor device and method for manufacturing the same 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：JP2013247153A
公开(公告)日：2013-12-09
申请号：JP2012117862
申请日：2012-05-23
申请人： Fujitsu Ltd , 富士通株式会社
发明人： MIYAJIMA TOYOO , SASAKI MAKOTO
IPC分类号： H01L21/338 , H01L29/778 , H01L29/812
CPC分类号： H01L29/7787 , H01L29/0649 , H01L29/1066 , H01L29/2003 , H01L29/32 , H01L29/66462
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device having low on-resistance and capable of achieving normally-off even when a p-type layer is thin.SOLUTION: The semiconductor device comprises: a buffer layer formed on a substrate; a growth control layer having an opening in a prescribed region formed of an insulator material on the buffer layer; a first semiconductor layer formed on the growth control layer and on the region in which the opening of the growth control layer is formed; a second semiconductor layer formed on the first semiconductor layer; and a third semiconductor layer of a first conductivity type formed in a region directly above the opening of the growth control layer on the second semiconductor layer.
摘要翻译：要解决的问题：提供具有低导通电阻并且即使当p型层薄时也能够实现常关的半导体器件。解决方案：半导体器件包括：形成在衬底上的缓冲层; 生长控制层，其在缓冲层上由绝缘体材料形成的规定区域中具有开口; 形成在所述生长控制层上和形成所述生长控制层的开口的区域上的第一半导体层; 形成在所述第一半导体层上的第二半导体层; 以及形成在第二半导体层上的生长控制层的开口正上方的区域中的第一导电类型的第三半导体层。

4. 发明专利

JP2011164183A Display device 审中-公开
标题翻译：显示设备
公开(公告)号：JP2011164183A
公开(公告)日：2011-08-25
申请号：JP2010024015
申请日：2010-02-05
申请人： Fujitsu Ltd , 富士通株式会社
发明人： KITADA HIDEKI , NAKADA YOSHIHIRO , KON JUNICHI , NAKAMURA TETSUKAZU , AOKI TAKESHI , MIYAJIMA TOYOO , WATANUKI TSUNEO , FUKUDA MAKOTO , TOMITA JUNJI
IPC分类号： G02F1/1343 , G02F1/13 , G02F1/1333 , G02F1/167
摘要： PROBLEM TO BE SOLVED: To provide a display device having a transparent electrode and capable of improving yield of its manufacture. SOLUTION: The display device is constituted by forming a plurality of opening parts formed along the direction of extension on the transparent electrode extended and formed on a transparent substrate and arranged in a plurality of rows with respect to the direction of width, arranging a counter substrate having a counter electrode, and nipping and holding a display substance between the transparent substrate and the counter substrate. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供一种具有透明电极并能够提高其制造成品率的显示装置。解决方案：显示装置通过在透明电极上延伸形成沿着延伸方向形成的多个开口部分，形成在透明基板上并相对于宽度方向布置成多行，布置具有对电极的对置基板，并且在透明基板和对置基板之间夹持并保持显示物质。版权所有（C）2011，JPO＆INPIT

5. 发明专利

JP2013201398A Semiconductor device, nitride semiconductor crystal, semiconductor device manufacturing method and nitride semiconductor crystal manufacturing method 有权
标题翻译：半导体器件，氮化物半导体晶体，半导体器件制造方法和氮化物半导体晶体制造方法
公开(公告)号：JP2013201398A
公开(公告)日：2013-10-03
申请号：JP2012070385
申请日：2012-03-26
申请人： Fujitsu Ltd , 富士通株式会社
发明人： NAKAMURA TETSUKAZU , YAMADA ATSUSHI , ISHIGURO TETSURO , MIYAJIMA TOYOO , IMANISHI KENJI
IPC分类号： H01L21/338 , H01L21/205 , H01L29/778 , H01L29/812
CPC分类号： H01L29/2003 , H01L21/02378 , H01L21/02381 , H01L21/02458 , H01L21/02505 , H01L21/0254 , H01L21/0262 , H01L24/06 , H01L24/45 , H01L24/49 , H01L29/7786 , H01L2224/04042 , H01L2224/0603 , H01L2224/45124 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2224/48472 , H01L2224/4903 , H01L2924/181 , H01L2924/00014 , H01L2924/00012 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device having low on-resistance.SOLUTION: A semiconductor device comprises: a nucleation layer formed on a substrate; a buffer layer formed on the nucleation layer; a first nitride semiconductor layer formed on the buffer layer; and a second nitride semiconductor layer formed on the first semiconductor layer. A ratio of yellow luminescence emission to band end emission in photoluminescence is 400% or less, and a twist value in an X-ray rocking curve is 1000 arcsecond or less.
摘要翻译：要解决的问题：提供具有低导通电阻的半导体器件。解决方案：一种半导体器件包括：形成在基底上的成核层; 形成在成核层上的缓冲层; 形成在缓冲层上的第一氮化物半导体层; 以及形成在第一半导体层上的第二氮化物半导体层。光致发光中的黄色发光与带末端发射的比例为400％以下，X射线摇摆曲线的扭转值为1000秒以下。

6. 发明专利

JP2012119586A Compound semiconductor device and method of manufacturing the same 有权
标题翻译：化合物半导体器件及其制造方法
公开(公告)号：JP2012119586A
公开(公告)日：2012-06-21
申请号：JP2010269714
申请日：2010-12-02
申请人： Fujitsu Ltd , 富士通株式会社
发明人： SHIMIZU SANAE , IMANISHI KENJI , YAMADA ATSUSHI , MIYAJIMA TOYOO
IPC分类号： H01L21/338 , H01L29/778 , H01L29/812 , H02M7/12
CPC分类号： H01L29/7787 , H01L21/02458 , H01L21/02507 , H01L21/0254 , H01L29/2003 , H01L29/66462
摘要： PROBLEM TO BE SOLVED: To provide a compound semiconductor device in which an electron traveling layer and an electron supply layer of good crystallinity can be obtained while minimizing warpage, or the like, due to the difference of thermal expansion coefficient of a material, and to provide a method of manufacturing the same.SOLUTION: A substrate 1, an electron traveling layer 3 formed on the substrate 1, an electron supply layer 4 formed above the electron traveling layer 3, and a buffer layer 2 formed between the substrate 1 and the electron traveling layer 3 and containing AlGaN(0≤x≤1) are provided. The value of x represents a plurality of maximums and a plurality of minimums in the thickness direction of the buffer layer 2, and variation of the value of x is 0.5 or less in any region where the thickness in the buffer layer 2 is 1 nm.
摘要翻译：解决的问题：提供一种化合物半导体器件，其中由于材料的热膨胀系数的差异，可以获得具有良好结晶度的电子传播层和电子供应层，同时最小化翘曲等并提供其制造方法。＆lt; P＆gt;解决方案：基板1，形成在基板1上的电子传输层3，形成在电子传播层3上的电子供应层4和形成在基板1和电子传播层3之间的缓冲层2和包含Al x Ga 1-x N（0≤x≤1）。 x的值表示缓冲层2的厚度方向上的多个最大值和多个最小值，并且在缓冲层2的厚度为1nm的任何区域中x的值的变化为0.5以下。版权所有（C）2012，JPO＆INPIT

7. 发明专利

JP2011123025A Ordered structure evaluation method and ordered structure evaluation device 有权
标题翻译：有序结构评估方法和订单结构评估设备
公开(公告)号：JP2011123025A
公开(公告)日：2011-06-23
申请号：JP2009283181
申请日：2009-12-14
申请人： Fujitsu Ltd , 富士通株式会社
发明人： MIYAJIMA TOYOO , YAMAZAKI TAKASHI , ODAKA YASUTOSHI
IPC分类号： G01N23/04
摘要： PROBLEM TO BE SOLVED: To provide a method for evaluating an ordered structure of a material having the ordered structure. SOLUTION: An ordered structure evaluation method, using image data capable of recognizing an atomic sequence of an imaging object, includes the steps of providing Fourier transform processing, spatial frequency filtering processing, and inverse Fourier transform processing for the image data to generate data indicating a distribution of an image intensity of the ordered structure to be evaluated, obtaining a pixel position of a boundary of a region having the ordered structure from the image data, and obtaining an image intensity corresponding to an image position obtained in the step from the data indicating the image intensity. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供一种用于评价具有有序结构的材料的有序结构的方法。解决方案：使用能够识别成像对象的原子序列的图像数据的有序结构评估方法包括以下步骤：为图像数据提供傅里叶变换处理，空间频率滤波处理和傅里叶逆变换处理，以产生指示要评估的有序结构的图像强度的分布的数据，从图像数据获得具有有序结构的区域的边界的像素位置，并且获得与在步骤中获得的图像位置相对应的图像强度数据表示图像强度。版权所有（C）2011，JPO＆INPIT

8. 发明专利

JP2013077621A Compound semiconductor device and manufacturing method of the same 有权
标题翻译：化合物半导体器件及其制造方法
公开(公告)号：JP2013077621A
公开(公告)日：2013-04-25
申请号：JP2011215198
申请日：2011-09-29
申请人： Fujitsu Ltd , 富士通株式会社
发明人： MAKIYAMA KOZO , OKAMOTO NAOYA , TAGI TOSHIHIRO , MINOURA YUICHI , OZAKI SHIRO , MIYAJIMA TOYOO
IPC分类号： H01L21/283 , H01L21/316 , H01L21/338 , H01L29/47 , H01L29/778 , H01L29/812 , H01L29/872 , H03F3/21
CPC分类号： H01L29/408 , H01L29/2003 , H01L29/66462 , H01L29/778 , H01L29/7786 , H01L29/7787 , H02M7/537
摘要： PROBLEM TO BE SOLVED: To provide a highly-reliable compound semiconductor device which reliably inhibits deterioration in device characteristics by relaxing field concentration at an electrode edge though achieving a high operation voltage thereby to achieve a high breakdown voltage and a high output.SOLUTION: A HEMT comprises on an SiC substrate 1: a compound semiconductor layer 2; a silicon nitride (SiN) protection film 6 having an opening 6b and covering a surface of the compound semiconductor layer 2; and a gate electrode 7 formed on the compound semiconductor layer 2 so as to be buried in the opening 6b. The protection film 6 has an overhanging part 6c formed by a low layer part 6a overhung from a lateral face of the opening 6b.
摘要翻译：解决的问题：为了提供一种高可靠性的化合物半导体器件，其可以通过实现高的工作电压来缓和电极边缘的电场浓度，从而实现高的击穿电压和高输出，从而可靠地抑制器件特性的劣化。解决方案：HEMT包括在SiC衬底1上：化合物半导体层2; 具有开口6b并覆盖化合物半导体层2的表面的氮化硅（SiN）保护膜6; 以及形成在化合物半导体层2上以埋入开口6b中的栅电极7。保护膜6具有由从开口6b的侧面悬垂的低层部6a形成的伸出部6c。版权所有（C）2013，JPO＆INPIT

9. 发明专利

JP2013074281A Compound semiconductor device and manufacturing method of the same 有权
标题翻译：化合物半导体器件及其制造方法
公开(公告)号：JP2013074281A
公开(公告)日：2013-04-22
申请号：JP2011214724
申请日：2011-09-29
申请人： Fujitsu Ltd , 富士通株式会社
发明人： MIYAJIMA TOYOO , IMANISHI KENJI , YAMADA ATSUSHI , NAKAMURA TETSUKAZU
IPC分类号： H01L21/338 , H01L29/778 , H01L29/812 , H02M3/155 , H02M3/28
CPC分类号： H01L29/045 , H01L29/1066 , H01L29/2003 , H01L29/517 , H01L29/66462 , H01L29/7787
摘要： PROBLEM TO BE SOLVED: To provide a highly-reliable and high breakdown voltage compound semiconductor device which has a high response speed though using a thin cap layer, and achieves a stable normally-off operation by inhibiting deterioration in device characteristics such as a pinch-off defect.SOLUTION: A compound semiconductor device comprises on an Si substrate 1, a compound semiconductor laminate structure 2 including an electron transit layer 2a, an electron supply layer 2c formed above the electron transit layer 2a and a cap layer 2d formed on the electron supply layer 2c. The cap layer 2d has a mix of a first crystal 2dhaving polarization the same with polarization of the electron transit layer 2a and the electron supply layer 2c, and a second crystal 2dhaving polarization opposite to polarization of the electron transit layer 2a and the electron supply layer 2c.
摘要翻译：要解决的问题：为了提供通过使用薄盖层具有高响应速度的高可靠性和高耐压化合物半导体器件，并且通过抑制器件特性的劣化来实现稳定的常关断操作夹断缺陷。解决方案：化合物半导体器件包括在Si衬底1上的化合物半导体层叠结构2，其包括形成在电子传输层2a上的电子传输层2a，形成电子传输层2a的电子供给层2c和形成在电子上的覆盖层2d 供给层2c。盖层2d具有与电子转移层2a和电子供给层2c的偏振相同的极化的第一晶体2d＆lt; SB POS =“POST”> 1 SB的混合物，具有与电子转移层2a和电子供给层2c的极化相反的极化的SB POS =“POST”> 2 。版权所有（C）2013，JPO＆INPIT

10. 发明专利

JP2012169544A Semiconductor device, power supply device, amplifier and semiconductor device manufacturing method 有权
标题翻译：半导体器件，电源器件，放大器和半导体器件制造方法
公开(公告)号：JP2012169544A
公开(公告)日：2012-09-06
申请号：JP2011031108
申请日：2011-02-16
申请人： Fujitsu Ltd , 富士通株式会社
发明人： NAKAMURA TETSUKAZU , OZAKI SHIRO , TAKEDA MASAYUKI , MIYAJIMA TOYOO , TAGI TOSHIHIRO , KANEMURA MASAHITO , IMANISHI KENJI , YOSHIKAWA SHUNEI , WATABE KEIJI
IPC分类号： H01L21/338 , H01L21/28 , H01L21/283 , H01L21/314 , H01L21/336 , H01L29/778 , H01L29/78 , H01L29/786 , H01L29/812
CPC分类号： H01L29/66462 , H01J37/32055 , H01J37/32357 , H01J37/32422 , H01J37/32669 , H01L21/28264 , H01L29/2003 , H01L29/41766 , H01L29/4236 , H01L29/51 , H01L29/513 , H01L29/517 , H01L29/7786 , H01L29/7787
摘要： PROBLEM TO BE SOLVED: To improve reliability of a semiconductor device in which an insulation film is formed between a semiconductor layer and a gate electrode.SOLUTION: A semiconductor device comprises a semiconductor layer formed above a substrate, an insulation film formed on the semiconductor layer and an electrode formed on the insulation film. The insulation film contains an amorphous film consisting primarily of carbon thereby solving the above-described problem.

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