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1. 发明专利

JP2011053691A Negative resist composition, method for forming resist pattern, and method for fabricating semiconductor device 有权
标题翻译：负极性组合物，形成耐蚀图案的方法和制造半导体器件的方法
公开(公告)号：JP2011053691A
公开(公告)日：2011-03-17
申请号：JP2010206036
申请日：2010-09-14
申请人： Fujitsu Ltd , 富士通株式会社
发明人： NOZAKI KOJI , YANO EI , OZAWA YOSHIKAZU , WATABE KEIJI
IPC分类号： G03F7/075 , C08G77/14 , G03F7/038 , G03F7/09 , G03F7/38 , H01L21/027
CPC分类号： B82Y30/00 , B82Y10/00 , G03F7/038 , G03F7/0382 , G03F7/0757 , G03F7/094 , G03F7/38
摘要： PROBLEM TO BE SOLVED: To provide a resist composition which can be developed with a basic aqueous solution and can form a fine pattern without swelling while having practicable sensitivity. SOLUTION: The negative resist composition containing an alkaline-soluble resin as a base material includes, as a compound including an oxetane structure in the structure, a silicon-containing polymer represented by formula (5), wherein n is a positive integer. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供可以用碱性水溶液显影的抗蚀剂组合物，并且可以在具有可行的灵敏度的情况下形成没有溶胀的细微图案。解决方案：含有碱溶性树脂作为基材的负性抗蚀剂组合物包括作为结构中包含氧杂环丁烷结构的化合物，由式（5）表示的含硅聚合物，其中n是正整数。版权所有（C）2011，JPO＆INPIT

2. 发明专利

JP2008107788A Resist pattern thickening material, method for forming resist pattern, semiconductor device and method for manufacturing the same 有权
标题翻译：电阻图案增厚材料，形成耐蚀图案的方法，半导体器件及其制造方法
公开(公告)号：JP2008107788A
公开(公告)日：2008-05-08
申请号：JP2007189182
申请日：2007-07-20
申请人： Fujitsu Ltd , 富士通株式会社
发明人： NOZAKI KOJI , OZAWA YOSHIKAZU
IPC分类号： G03F7/40 , H01L21/027
CPC分类号： G03F7/38 , C08K5/17 , G03F7/40 , H01L21/0273 , H01L21/0338 , H01L21/3081 , H01L21/31144 , H01L27/105 , H01L27/11526 , H01L27/11543 , H01L29/06
摘要： PROBLEM TO BE SOLVED: To provide a resist pattern thickening material, which can utilize ArF laser light, which can thicken a resist pattern regardless of the size by only applying the material on the ArF resist pattern or the like, which is excellent in etching durability and capable of easily and inexpensively forming a fine resist space pattern or the like exceeding an exposure limit. SOLUTION: The resist pattern thickening material contains at least a resin and a compound expressed by general formula (1), is a nonaqueous material and contains no acid-generator and no crosslinker. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供可以利用ArF激光的抗蚀剂图案增厚材料，其可以通过仅将该材料施加在ArF抗蚀剂图案等上而使厚度增加抗蚀剂图案，而不管尺寸如何，其优异并且能够容易且廉价地形成超过曝光极限的精细抗蚀剂空间图案等。抗蚀剂图案增稠材料至少含有树脂和由通式（1）表示的化合物，是非水性材料，不含酸产生剂，不含交联剂。版权所有（C）2008，JPO＆INPIT

3. 发明专利

JP2006227633A Thickening material of resist pattern, resist pattern, manufacturing method of the same, and semiconductor apparatus and manufacturing method of the same 有权
标题翻译：耐腐蚀图案，耐蚀图案，其制造方法和其半导体装置的加厚材料及其制造方法
公开(公告)号：JP2006227633A
公开(公告)日：2006-08-31
申请号：JP2006089464
申请日：2006-03-28
申请人： Fujitsu Ltd , 富士通株式会社
发明人： NOZAKI KOJI , OZAWA YOSHIKAZU
IPC分类号： G03F7/40 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide a method for manufacturing a resist pattern, a method for manufacturing a semiconductor apparatus, or the like, by which a light source of ArF excimer laser light or the like in a conventional exposure apparatus can be used for patterning a resist pattern, excellent productivity is achieved and a resist cutout pattern can be finely fabricated over the exposure limit of the light source. SOLUTION: The method for manufacturing a resist pattern includes steps of forming a resist pattern and applying a resist pattern thickening material to cover the surface of the resist pattern. The resist pattern thickening material contains a resin, a crosslinking agent, a cationic surfactant, an amphoteric surfactant, and at least one kind in nonionic surfactants selected from alkoxylate surfactant, fatty acid ester surfactants, amide surfactants, alcohol surfactants and ethylene diamine surfactants. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种用于制造抗蚀剂图案的方法，用于制造半导体装置等的方法，通过该方法，常规曝光装置中的ArF准分子激光等的光源可以是用于图案化抗蚀剂图案，实现了优异的生产率，并且可以在光源的曝光极限下精细地制造抗蚀剂切割图案。解决方案：抗蚀剂图案的制造方法包括形成抗蚀剂图案和涂覆抗蚀剂图案增厚材料以覆盖抗蚀剂图案的表面的步骤。抗蚀剂图案增稠材料包含树脂，交联剂，阳离子表面活性剂，两性表面活性剂，以及选自烷氧基化物表面活性剂，脂肪酸酯表面活性剂，酰胺表面活性剂，醇表面活性剂和乙二胺表面活性剂的非离子表面活性剂中的至少一种。版权所有（C）2006，JPO＆NCIPI

4. 发明专利

JP2006106295A Resist pattern swelling material, method for forming resist pattern, semiconductor apparatus and its manufacturing method 有权
标题翻译：电阻图案材料，形成耐蚀图案的方法，半导体器件及其制造方法
公开(公告)号：JP2006106295A
公开(公告)日：2006-04-20
申请号：JP2004291910
申请日：2004-10-04
申请人： Fujitsu Ltd , 富士通株式会社
发明人： OZAWA YOSHIKAZU , NOZAKI KOJI , NAMIKI TAKAHISA
IPC分类号： G03F7/40 , H01L21/027
CPC分类号： G03F7/40 , Y10S430/106 , Y10S430/128
摘要： PROBLEM TO BE SOLVED: To provide a method for forming a resist pattern by which excimer laser light can be also used, excellent storage stability is obtained, the swelling (thickening) amount of a resist pattern can be controlled to be uniform and constant with high accuracy without depending on changes in conditions such as temperature and atmosphere or storage period, a fine resist cut-put pattern can be easily and efficiently formed at a low cost over the exposure limit (resolution limit) by the light source in an exposure apparatus. SOLUTION: The method includes: a step of forming a swollen resist pattern by forming a resist pattern on an object surface to be processed and then applying a resist pattern swelling material on the resist pattern to swell (thicken) the resist pattern; and a step of patterning the object surface by etching by using the swollen resist pattern as a mask. The resist pattern swelling material comprises at least a resin and the pH of the material during and after coating the resist pattern is in the range of >7 and ≤14. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：为了提供形成可以使用准分子激光的抗蚀剂图案的方法，获得了优异的储存稳定性，可以将抗蚀剂图案的溶胀（增稠）量控制为均匀，恒定的高精度，而不依赖于诸如温度和气氛或储存期间的条件的变化，可以以低成本容易且有效地形成良好的抗蚀剂切割图案，超过光源在曝光极限（分辨率极限）曝光装置解决方案：该方法包括：通过在待加工物体表面上形成抗蚀图案，然后在抗蚀剂图案上涂布抗蚀剂图案溶胀材料以使抗蚀剂图案膨胀（增厚）来形成溶胀抗蚀剂图案的步骤; 以及通过使用溶胀抗蚀剂图案作为掩模通过蚀刻对物体表面进行图案化的步骤。抗蚀剂图案膨胀材料至少包含一种树脂，并且在涂覆抗蚀剂图案期间和之后的材料的pH值在> 7和≤14的范围内。版权所有（C）2006，JPO＆NCIPI

5. 发明专利

JP2004126080A Resist pattern thickening material, method of forming resist pattern, and method of manufacturing semiconductor device 有权
公开(公告)号：JP2004126080A
公开(公告)日：2004-04-22
申请号：JP2002288117
申请日：2002-09-30
申请人： Fujitsu Ltd , 富士通株式会社
发明人： OZAWA YOSHIKAZU , NOZAKI KOJI
IPC分类号： G03F7/26 , G03F7/00 , G03F7/004 , G03F7/40 , G11B5/855 , H01L21/02 , H01L21/027 , H01L21/311 , H01L21/3213 , H01L21/8242 , H01L21/8247 , H01L27/105
CPC分类号： H01L28/10 , G03F7/0035 , G03F7/0048 , G03F7/40 , G11B5/855 , H01L21/0273 , H01L21/31144 , H01L21/32139 , H01L27/105 , H01L27/10844 , H01L27/10894 , H01L27/11526 , H01L27/11541 , H01L27/11543
摘要： PROBLEM TO BE SOLVED: To provide a resist pattern thickening material capable of forming a resist-void pattern which is fine exceeding exposure limits of a light source of an exposure device used for patterning by thickening a resist pattern. SOLUTION: The resist pattern thinning material contains a resin and a surface active agent. In a method for forming the resist pattern, the resist pattern is formed and then the surface of the resist pattern is coated with the resist pattern thickening material to form a thickened resist pattern. A method for manufacturing a semiconductor device includes a process of manufacturing a thickened resist pattern by forming a resist pattern on a base layer and then coating the resist pattern surface with the thickening material to thicken the resist pattern and a process of patterning the base layer by etching the base layer by using the thickened resist pattern. COPYRIGHT: (C)2004,JPO

6. 发明专利

JP2007264646A Resist pattern thickening material, resist pattern and forming process thereof, and semiconductor device and manufacturing process thereof 有权
标题翻译：电阻图形加厚材料，电阻图案及其成型工艺及其半导体器件及其制造工艺
公开(公告)号：JP2007264646A
公开(公告)日：2007-10-11
申请号：JP2007125611
申请日：2007-05-10
申请人： Fujitsu Ltd , 富士通株式会社
发明人： OZAWA YOSHIKAZU , NOZAKI KOJI , NAMIKI TAKAHISA , KON JUNICHI , YANO EI
IPC分类号： G03F7/40 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide a resist pattern thickening material etc., with which a resist pattern is thickened, a surface layer with superior etching resistance can be formed, and the pattern can be made fine. SOLUTION: The resist pattern thickening material has resin, a crosslinking agent and a compound having a cyclic structure, or resin having a cyclic structure at a part and a crosslinking agent. The resist pattern has a surface layer on a resist pattern with etching rate (Ånm/s) ratio (internal layer/surface layer) of 1.1 or more under the same condition. The process for forming a resist pattern includes applying the thickening material after forming a resist pattern on its surface. The manufacturing process for the semiconductor has applying, after forming a resist pattern on an underlaying layer, the thickening material to the surface of the resist pattern to be thickened, and patterning the underlying layer by etching, the pattern as a mask. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：为了提供抗蚀剂图案增稠的抗蚀剂图案增厚材料等，可以形成具有优异的耐蚀刻性的表面层，并且可以使图案精细化。抗蚀剂图案增厚材料具有树脂，交联剂和具有环状结构的化合物，或部分具有环状结构的树脂和交联剂。抗蚀剂图案在抗蚀剂图案上具有在相同条件下的蚀刻速率（Ånm/ s）比（内层/表面层）为1.1以上的表面层。形成抗蚀剂图案的方法包括在其表面上形成抗蚀剂图案之后施加增厚材料。半导体的制造工艺在将衬底层上形成抗蚀剂图案之后，将增厚材料施加到抗蚀剂图案的表面以加厚，并通过蚀刻将图案图案化为掩模。版权所有（C）2008，JPO＆INPIT

7. 发明专利

JP2006259692A Resist pattern thickening material, process for forming resist pattern, semiconductor device, and method for manufacturing the same 有权
标题翻译：耐蚀图案加厚材料，用于形成耐蚀图案的工艺，半导体器件及其制造方法
公开(公告)号：JP2006259692A
公开(公告)日：2006-09-28
申请号：JP2005366991
申请日：2005-12-20
申请人： Fujitsu Ltd , 富士通株式会社
发明人： NOZAKI KOJI , OZAWA YOSHIKAZU , NAMIKI TAKAHISA
IPC分类号： G03F7/40 , H01L21/027
CPC分类号： G11B5/3163 , G03F7/2024 , G03F7/40 , H01L21/0274 , H01L21/0275 , H01L27/115 , H01L27/11526 , H01L27/11543 , Y10S430/106 , Y10S430/114
摘要： PROBLEM TO BE SOLVED: To provide a resist pattern thickening material which can utilize ArF excimer laser light, which, is applyed over a resist pattern in a form of lines or the like of an ArF resist or the like to thicken the resist pattern regardless of the size, which has excellent etching durability and which can efficiently, easily and inexpensively form a fine resist space pattern or the like exceeding exposure limits.
SOLUTION: The resist pattern thickening material contains a resin and a compound expressed by general formula (1). In general formula (1), X represents a functional group expressed by structural formula (1); Y represents any one of hydroxyl group, amino group, amino group substituted by alkyl group, alkoxy group, alkoxycarbonyl group and alkyl group, and the number of substitution is an integer of 0 to 3; m represents an integer of 1 or more; and n represents an integer of 0 or more. In structural formula (1), each of R
1 and R
2 represents a hydrogen or substituent; Z represents any one of hydroxyl group, amino group, amino group substituted by alkyl group and alkoxy group, and the number of substitution is an integer of 0 to 3.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种抗蚀剂图案增厚材料，其可以利用ArF准分子激光，其被施加在ArF抗蚀剂等的线或类似形式的抗蚀剂图案上以增厚抗蚀剂不管尺寸如何，其具有优异的蚀刻耐久性，并且可以有效地，容易地且低成本地形成超过暴露极限的抗蚀剂空间图案等。抗蚀剂图案增稠材料含有树脂和由通式（1）表示的化合物。通式（1）中，X表示由结构式（1）表示的官能团。 Y表示羟基，氨基，被烷基，烷氧基，烷氧基羰基和烷基取代的氨基中的任一个，取代数为0〜3的整数。 m表示1以上的整数， n表示0以上的整数。在结构式（1）中，R“SP 1”和“R”2“中的每一个表示氢或取代基; Z表示羟基，氨基，被烷基和烷氧基取代的氨基中的任一个，取代数为0〜3的整数。（C）2006，JPO＆NCIPI

8. 发明专利

JP2004046060A Resist pattern thickening material, resist pattern and manufacturing method thereof, as well as semiconductor device and manufacturing method thereof 有权
标题翻译：耐腐蚀图案厚度材料，电阻图案及其制造方法，以及作为半导体器件的制造方法及其制造方法
公开(公告)号：JP2004046060A
公开(公告)日：2004-02-12
申请号：JP2002328931
申请日：2002-11-12
申请人： Fujitsu Ltd , 富士通株式会社
发明人： OZAWA YOSHIKAZU , NOZAKI KOJI , NAMIKI TAKAHISA , KON JUNICHI , YANO EI
IPC分类号： G03F7/40 , G03F7/095 , G03F7/26 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide a resist pattern thickening material which enables the thickening of a resist pattern, enables the formation of a surface layer having excellent etching durability and can make the pattern fine. SOLUTION: The resist pattern thickening material comprises a resin, a cross-linking agent and a cyclic structure-containing compound or comprises a resin partially having cyclic structure and the cross-linking agent. In the manufacturing method of the resist pattern, the surface layer is disposed on the resist pattern, the ratio (inner layer/surface layer) of etching speed (Å/s) between the surface layer and the inner layer under the same conditions is 1.1 or above, after forming the resist pattern, the thickening material is applied to the pattern surface. The manufacturing method of semiconductor device comprises a process that forms the resist pattern on the substrate, thereafter, applies the thickening material on the pattern surface and thickens the pattern and a process that patterns the substrate layer by the etching using the pattern as a mask. COPYRIGHT: (C)2004,JPO
摘要翻译：要解决的问题：为了提供能够使抗蚀剂图案增稠的抗蚀剂图案增厚材料，能够形成具有优异的耐腐蚀性的表面层，并且可以使图案变细。抗蚀剂图案增稠材料包括树脂，交联剂和含环状结构的化合物，或包含部分具有环状结构的树脂和交联剂。在抗蚀剂图案的制造方法中，表面层设置在抗蚀剂图案上，在相同条件下表面层和内层之间的蚀刻速度（/ s）的比（内层/表面层）为1.1 以上，在形成抗蚀剂图案之后，将增厚材料施加到图案表面。半导体器件的制造方法包括在衬底上形成抗蚀剂图案的工艺，此后，将增厚材料施加在图案表面上并使图案变厚，以及通过使用图案作为掩模的蚀刻对衬底层进行图案化的工艺。版权所有（C）2004，JPO

9. 发明专利

JP2012022338A Negative type resist composition, resist pattern formation method and method for manufacturing semiconductor device 有权
标题翻译：负极型电阻组合物，电阻图案形成方法和制造半导体器件的方法
公开(公告)号：JP2012022338A
公开(公告)日：2012-02-02
申请号：JP2011221175
申请日：2011-10-05
申请人： Fujitsu Ltd , 富士通株式会社
发明人： NOZAKI KOJI , YANO EI , OZAWA YOSHIKAZU , WATABE KEIJI
IPC分类号： G03F7/038 , C08F220/06 , C08F220/18 , C08F220/58 , C08F222/06 , C08F232/08 , G03F7/075 , G03F7/09 , G03F7/38 , H01L21/027
CPC分类号： B82Y30/00 , B82Y10/00 , G03F7/038 , G03F7/0382 , G03F7/0757 , G03F7/094 , G03F7/38
摘要： PROBLEM TO BE SOLVED: To provide a resist composition with which fine patterns can be formed without swelling with good practical sensitivity by development using a basic aqueous solution.SOLUTION: A negative type resist composition includes an alkali-soluble resin with an oxetane structure expressed by formulas (I) to (XIII), a solvent and a light acid generator with which acid can be generated with which the oxetane structure of the alkali-soluble resin can react upon absorption and decomposition of an imaging radiation and can be solved in a basic aqueous solution. An exposure part becomes alkali insoluble after exposure of light.
摘要翻译：要解决的问题：提供一种抗蚀剂组合物，通过使用碱性水溶液的显影，可以形成具有良好实用灵敏度的无膨胀的细微图案。解决方案：负型抗蚀剂组合物包括具有由式（I）至（XIII）表示的氧杂环丁烷结构的碱溶性树脂，可以产生酸的溶剂和轻酸产生剂，其中可以产生酸的氧杂环丁烷结构碱溶性树脂可以在成像辐射的吸收和分解中发生反应，并且可以在碱性水溶液中溶解。曝光部分在曝光后变成碱不溶性。版权所有（C）2012，JPO＆INPIT

10. 发明专利

JP2011099903A Resist pattern thickening material, and semiconductor device and production method thereof 有权
标题翻译：电阻图案加厚材料及其半导体器件及其制造方法
公开(公告)号：JP2011099903A
公开(公告)日：2011-05-19
申请号：JP2009252800
申请日：2009-11-04
申请人： Fujitsu Ltd , 富士通株式会社
发明人： OZAWA YOSHIKAZU , NOZAKI KOJI
IPC分类号： G03F7/40 , C08B37/16
CPC分类号： H01L21/0273 , C08L5/16 , C08L29/04 , C09D105/16 , C09D129/04 , G03F7/40 , H01L21/31144 , H01L21/76816 , C08L31/04 , C08L39/06
摘要： PROBLEM TO BE SOLVED: To provide a resist pattern thickening material which efficiently thickens a resist pattern, while suppressing sublimation of low-molecular compounds, and which enables a fine resist pattern to be produced, with the fine resist pattern exceeding the exposure limit in a light source of an existing exposure device, to provide a semiconductor device manufactured that uses the resist pattern thickening material, and to provide a method for manufacturing the device. SOLUTION: The resist pattern thickening material contains resin, a compound selected among a cyclic compound represented by general formula (1), a compound having a carboxyl group-containing cyclic structure, and a compound containing an aromatic hydrocarbon structure and water. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：解决问题：为了提供抗蚀剂图案增厚材料，其在抑制低分子化合物的升华的同时有效地增厚抗蚀剂图案，并且能够在精细抗蚀剂图案超过曝光的情况下产生精细的抗蚀剂图案限制现有曝光装置的光源，以提供使用抗蚀剂图案增厚材料制造的半导体器件，并提供一种用于制造该器件的方法。抗蚀剂图案增稠材料包含树脂，选自通式（1）表示的环状化合物，具有含羧基的环状结构的化合物和含有芳烃结构的化合物和水的化合物。版权所有（C）2011，JPO＆INPIT

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