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1. 发明专利

JP2012132058A Electroplating method 有权
标题翻译：电镀方法
公开(公告)号：JP2012132058A
公开(公告)日：2012-07-12
申请号：JP2010284326
申请日：2010-12-21
申请人： Ebara Corp , 株式会社荏原製作所
发明人： YASUDA SHINGO , KURIYAMA FUMIO , SHIMOYAMA TADASHI , NAGAI MIZUKI , TAMARI YUSUKE
IPC分类号： C25D5/18 , C25D7/12 , H01L21/28 , H01L21/288
CPC分类号： C25D5/18 , C25D7/123
摘要： PROBLEM TO BE SOLVED: To reliably and effectively bury a plated metal of copper and the like in the inner part of a via, which has a high aspect ratio and a deep embedding depth, without generating a defect such as a void in the inner part while promoting a bottom up growth.SOLUTION: A substrate and an anode are immersed and disposed in a plating liquid in a plating tank while the surface of the substrate with the via formed thereon and the anode are opposed to each other, and the plated metal is embedded in the via by making the change such that the ratio occupied by a plating current flowing time is made large accompanying advance of plating while supply and suspension of a plating current having a fixed current value are intermittently repeated between the substrate and the anode.
摘要翻译：要解决的问题：为了可靠且有效地将铜等的电镀金属埋入到具有高纵横比和深深嵌入深度的通孔的内部，而不产生诸如空隙的缺陷内部部分同时促进自下而上的增长。解决方案：将基板和阳极浸入并设置在电镀槽中的电镀液中，同时其上形成有通孔的基板的表面和阳极彼此相对，并将电镀金属嵌入通过进行这样的改变，使得随着电镀的进行而使电镀电流流动时间所占的比例变大，同时在衬底和阳极之间间歇地重复具有固定电流值的电镀电流的供应和暂停。版权所有（C）2012，JPO＆INPIT

2. 发明专利

JP2005307356A Electroless copper-plating method 审中-公开
标题翻译：电镀铜法
公开(公告)号：JP2005307356A
公开(公告)日：2005-11-04
申请号：JP2005213228
申请日：2005-07-22
申请人： Ebara Corp , 株式会社荏原製作所
发明人： SENDAI SATOSHI , KOGURE NAOAKI , KURIYAMA FUMIO , IKEGAMI TETSUMASA , OKUYAMA SHUICHI
IPC分类号： C23C18/38
摘要： PROBLEM TO BE SOLVED: To provide an electroless copper-plating method capable of prolonging the service life of the plating solution and facilitating the control of a plating liquid, by inhibiting a Cannizzaro reaction as much as possible. SOLUTION: The copper plating method comprises plating a substrate W with copper while circulating the plating liquid 10 between a plating tank 11 in which the substrate W is held and is electroless copper-plated and a plating liquid circulation tank 12 for storing the plating liquid 10 therein, so that a temperature T 1 of the plating liquid 10 in the plating tank 11 can be higher than the temperature T 2 of the plating liquid 10 in the plating liquid circulation tank 12 (T 1 >T 2 ); and throughout the period of carrying the substrate in and taking it out from the plating process tank 11, returning all of the plating liquid 10 to the plating liquid circulation tank 12. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：通过尽可能地抑制坎尼扎罗反应，提供能够延长电镀液的使用寿命并且便于电镀液的控制的化学镀铜方法。解决方案：铜电镀方法包括在将电镀液体10在其中保持基板W的镀槽11和电化学镀铜之间循环电镀液体10的同时将铜基板W电镀，并且将电镀液循环罐12 电镀液10，使得电镀槽11中的电镀液10的温度T SB> 1 可以高于电镀液10中的电镀液10的温度T SB> 2 电镀液循环箱12（T 1 > T 2 ）; 并且在将基板搬运并从电镀处理槽11中取出的期间，将所有的电镀液10返回到电镀液循环槽12.版权所有（C）2006，JPO＆NCIPI

3. 发明专利

JP2005097732A Plating apparatus 有权
标题翻译：电镀设备
公开(公告)号：JP2005097732A
公开(公告)日：2005-04-14
申请号：JP2004240017
申请日：2004-08-19
申请人： Ebara Corp , 株式会社荏原製作所
发明人： SAITO NOBUTOSHI , KURIYAMA FUMIO , TAKEMURA TAKASHI , KIMURA MASAAKI , KOKAI REI , ONOZAWA MASUNOBU , HORIE KUNIAKI , MINAMI YOSHIO
IPC分类号： C25D5/08 , C25D5/18 , C25D17/00
CPC分类号： H01L2924/01078
摘要： PROBLEM TO BE SOLVED: To more increase the plane uniformity in the film thickness of a plated film by more uniformly controlling the flow of a plating solution in a plating tank, and to securely perform the embedding or the like of the plated film in a shorter time by optimizing the plating speed and/or plating condition.
SOLUTION: The plating apparatus has a plating tank 186 for holding a plating solution 188, a holder 160 for holding a workpiece so as to energize the workpiece and bringing a surface to be plated of the workpiece into contact with the plating solution in the plating tank 186, and a nozzle pipe 220 disposed in the plating tank and having a plurality of plating solution injection nozzles 222 for injecting the plating solution to the surface to be plated of the workpiece held by the holder to supply the plating solution into the plating tank, an anode 214 disposed in a state of being dipped into the plating solution in the plating tank, a plating power source 230 applying voltage between the workpiece and the anode, and a control part 250 changing the voltage to be applied between the workpiece and the anode from the plating power source in the process of the plating.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题为了通过更均匀地控制电镀槽中的电镀液的流动来进一步提高镀膜的膜厚的平面均匀性，并且可靠地进行镀膜的包埋等通过优化电镀速度和/或电镀条件在更短的时间内。解决方案：电镀装置具有用于保持电镀液188的镀槽186，用于保持工件的保持器160，以使工件激励并使待加工的表面与电镀液接触电镀槽186和设置在镀槽中的喷嘴管220，并且具有多个电镀液注入喷嘴222，用于将镀液注入由保持器保持的工件的被镀表面，以将电镀液供给到电镀槽，以浸渍在镀槽内的电镀液中的状态配置的阳极214，在工件与阳极之间施加电压的电镀电源230以及改变施加在工件之间的电压的控制部250 以及电镀过程中电镀电源的阳极。版权所有（C）2005，JPO＆NCIPI

4. 发明专利

JP2004225129A Plating method and plating device 审中-公开
标题翻译：电镀方法和镀层装置
公开(公告)号：JP2004225129A
公开(公告)日：2004-08-12
申请号：JP2003016270
申请日：2003-01-24
申请人： Ebara Corp , 株式会社荏原製作所
发明人： KOKAI REI , KURIYAMA FUMIO , SAITO NOBUTOSHI
IPC分类号： C25D7/12 , C25D17/10 , H01L21/288
摘要： PROBLEM TO BE SOLVED: To provide a plating method and a plating device with which the applied electric potential distribution is freely and finely adjusted at a low cost when performing plating on a substrate surface to be plated, and a plating film of uniform film thickness is deposited on the substrate surface without requiring any complicated operation method.
SOLUTION: In the plating device in which an anode 14 and a substrate W to be plated are disposed facing each other and immersed in a plating solution 10 in a plating tank 11 holding the plating solution 10. An adjustment plate 21 is disposed between the anode 14 and the substrate W, and the substrate W is plated by performing energization between the anode 14 and the substrate W, the adjustment plate 21 is formed of a dielectric material, and a through hole group distribution adjustment means having a through hole group consisting of a large number of through holes 24 penetrated from the surface on the substrate side to the anode side surface to adjust the condition of distribution of the through hole group of the adjustment plate 21 is provided.
COPYRIGHT: (C)2004,JPO&NCIPI
摘要翻译：要解决的问题：提供一种电镀方法和电镀装置，在对要镀覆的基板表面进行电镀时，以低成本自由地精细地调整所施加的电位分布，以及均匀的镀膜膜厚沉积在基板表面上，而不需要任何复杂的操作方法。解决方案：在要镀覆的阳极14和基板W彼此相对放置并浸渍在电镀液10中的电镀装置中的电镀装置中，电镀液10保持在电镀液10中。调整板21 在阳极14和基板W之间，通过在阳极14和基板W之间进行通电来对基板W进行电镀，调整板21由电介质材料形成，通孔组分布调整装置具有通孔设置有从基板侧的表面向阳极侧表面穿透的大量通孔24组成的组，以调节调节板21的通孔组的分布状态。版权所有（C）2004，JPO＆NCIPI

5. 发明专利

JP2010018841A Plating apparatus and plating method for forming magnetic film 有权
标题翻译：用于形成磁膜的电镀设备和镀层方法
公开(公告)号：JP2010018841A
公开(公告)日：2010-01-28
申请号：JP2008180254
申请日：2008-07-10
申请人： Ebara Corp , 株式会社荏原製作所
发明人： ENDO YASUHIKO , KURIYAMA FUMIO , KIMURA MASAAKI
IPC分类号： C25D5/00 , C25D17/06 , C25D17/10 , C25D21/00 , C25D21/04 , C25D21/10
CPC分类号： C25D17/00 , C25D5/006 , C25D17/001 , C25D17/12
摘要： PROBLEM TO BE SOLVED: To provide a magnetic film plating apparatus which employs a dip method that allows relatively good escape of bubbles and does not require a wide footprint and, even when a ferromagnetic material is used for an anode, can form a magnetic film on a substrate surface while minimizing the influence of the anode on the uniformity of magnetic anisotropy in the magnetic film. SOLUTION: The magnetic film plating apparatus includes: a plating tank 40 for holding a plating solution Q therein; an anode 220 vertically disposed in the plating tank 40 at a position to be immersed in the plating solution Q; a substrate holder 26 for holding a substrate W and positioning the substrate W opposite the anode 220; and a magnetic field generator 114, disposed outside the plating tank Q, for generating a magnetic field around the substrate W held by the substrate holder 26 and positioned opposite the anode 220. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种使用允许气泡相对较好逸出并且不需要宽的占地面积的浸渍方法的磁性膜电镀设备，并且即使当铁磁材料用于阳极时，也可以形成同时最小化阳极对磁性膜中磁各向异性均匀性的影响。解决方案：磁性膜电镀设备包括：用于在其中保持电镀液Q的电镀槽40; 在浸镀在电镀液Q中的位置上垂直设置在镀槽40内的阳极220; 用于保持基板W并将基板W定位在与阳极220相对的基板保持器26; 以及设置在镀槽Q外部的磁场发生器114，用于在由衬底保持器26保持并且与阳极220相对定位的衬底W周围产生磁场。版权所有（C）2010，JPO＆INPIT

6. 发明专利

JP2009102674A Plating method and plating apparatus 有权
标题翻译：电镀方法和镀膜装置
公开(公告)号：JP2009102674A
公开(公告)日：2009-05-14
申请号：JP2007273423
申请日：2007-10-22
申请人： Ebara Corp , 株式会社荏原製作所
发明人： KAMIMURA KENJI , KURIYAMA FUMIO , SAITO NOBUTOSHI , TAKEDA SACHIKO
IPC分类号： C25D21/12 , C25D21/10
CPC分类号： H01L2224/11
摘要： PROBLEM TO BE SOLVED: To provide a plating method which can easily form a plated film having a desired composition, and to provide a plating apparatus. SOLUTION: The plating method comprises the steps of: immersing a semiconductor wafer 23 and an anode 25 into a plating liquid (Q) containing two or more metal ions; and applying an electric current to the semiconductor wafer 23 to plate a surface 23a to be plated of the semiconductor wafer 23 with the metal. The plating apparatus therefor is also disclosed. The plating method includes increasing a current density of the electric current to be applied as a plating period of time elapses, or decreasing a rate of stirring the plating liquid (Q) by a paddle 29 as a plating period of time elapses. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种可以容易地形成具有所需组成的镀膜的电镀方法，并提供电镀装置。电镀方法包括以下步骤：将半导体晶片23和阳极25浸入含有两种或更多种金属离子的电镀液体（Q）中; 并向半导体晶片23施加电流，以使金属镀覆半导体晶片23的表面23a。还公开了其电镀装置。电镀方法包括随着电镀时间的延长而增加要施加的电流的电流密度，或者随着电镀时间的过去，通过桨形件29降低电镀液（Q）的搅拌速度。版权所有（C）2009，JPO＆INPIT

7. 发明专利

JP2007297652A Plating method and plating apparatus 审中-公开
标题翻译：电镀方法和镀膜装置
公开(公告)号：JP2007297652A
公开(公告)日：2007-11-15
申请号：JP2006124213
申请日：2006-04-27
申请人： Ebara Corp , 株式会社荏原製作所
发明人： KAMIMURA KENJI , SAITO NOBUTOSHI , KURIYAMA FUMIO
IPC分类号： C25D7/12 , C25D5/18 , H01L21/288 , H01L21/60
摘要： PROBLEM TO BE SOLVED: To provide a plating method and a plating apparatus, wherein abnormal deposition caused in a plated film can be effectively prevented/suppressed within a range where the abnormal deposition does not extremely affect the number of treated pieces of substrates per unit time.
SOLUTION: A semiconductor wafer 3 and an anode 5 are dipped in a plating solution Q containing metal ions, and then metal plating is applied on the surface 3a to be plated of the semiconductor wafer 3 by supplying an electric current between the semiconductor water 3 and the anode 5. A process comprising continuously supplying an electric current between the semiconductor water 3 and the anode 5 until the thickness of a plated film becomes 1-20 μm and then stopping current supply for 1 s to 20 min is repeated several times, during which the plating solution Q in the vicinity of the surface 3a to be plated is stirred by a paddle 9.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：为了提供一种电镀方法和电镀装置，其中可以在异常沉积不会极大影响处理的基片数量的范围内有效地防止/抑制在镀膜中引起的异常沉积每单位时间。解决方案：将半导体晶片3和阳极5浸入含有金属离子的镀液Q中，然后通过在半导体晶片3之间提供电流，在半导体晶片3的电镀表面3a上施加金属电镀水3和阳极5.一种包括在半导体水3和阳极5之间连续供应电流直到镀膜厚度为1-20μm，然后停止电流供应1秒至20分钟的方法被重复几次时间，在此期间，待镀覆表面3a附近的电镀液Q被桨9搅拌。版权所有（C）2008，JPO＆INPIT

8. 发明专利

JP2005240108A Plating apparatus and plating method 有权
标题翻译：电镀设备和电镀方法
公开(公告)号：JP2005240108A
公开(公告)日：2005-09-08
申请号：JP2004051849
申请日：2004-02-26
申请人： Ebara Corp , 株式会社荏原製作所
发明人： TAKEMURA TAKASHI , SAITO NOBUTOSHI , KURIYAMA FUMIO , YOSHIOKA JUNICHIRO , HORIE KUNIAKI , MINAMI YOSHIO , KAMODA KENJI
IPC分类号： C25D7/12 , C25D5/02 , C25D5/34 , C25D5/48 , C25D5/50 , C25D17/00 , C25D21/12 , C25D21/14 , C25D21/16 , C25D21/18
CPC分类号： H01L2224/1146 , H01L2224/1147 , H01L2924/01078
摘要： PROBLEM TO BE SOLVED: To form a plated film free from plating defect such as a chipping of the film and an unplated spot, by surely plugging a plating liquid into an opening of a resist formed on a substrate, without adding a surface active agent to the plating liquid. SOLUTION: The plating apparatus for forming a plated film on a predetermined position of a substrate surface on which wiring has been formed, while using a resist as a mask, comprises an ashing device 300 for performing ashing treatment on the resist applied on the substrate surface; a pre-wetting section 26 for performing hydrophilizing treatment on the substrate surface after having been ashing-treated; a presoaking section 28 for cleaning or activating the surface of the substrate to be plated by contacting the substrate surface after having been hydrophilized with a treatment liquid; and a plating tank 34 for growing a plated film on the surface of the substrate to be plated by making the substrate surface contact with the plating liquid in which an anode is immersed. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：为了形成没有电镀缺陷的电镀膜，例如膜的剥落和未镀层的斑点，通过将电镀液肯定地插入到形成在基板上的抗蚀剂的开口中，而不添加表面电镀液中的活性剂。＆lt; P＆gt;解决方案：在使用抗蚀剂作为掩模的同时，在形成有布线的基板表面的预定位置上形成电镀膜的电镀装置包括灰化装置300，用于对施加在抗蚀剂上的抗蚀剂进行灰化处理基材表面; 用于在灰化处理之后在基板表面上进行亲水化处理的预润湿部分26; 预浸渍部分28，用于通过在已经用处理液体亲水化之后使基板表面接触来清洁或激活待镀基材的表面; 以及电镀槽34，用于通过使基板表面与浸渍有阳极的电镀液接触而在被镀基板的表面上生长镀膜。版权所有（C）2005，JPO＆NCIPI

9. 发明专利

JP2004300527A Direct gold plating method, and plating device therefor 有权
标题翻译：直接镀金方法及其镀层器件
公开(公告)号：JP2004300527A
公开(公告)日：2004-10-28
申请号：JP2003095409
申请日：2003-03-31
申请人： Ebara Corp , 株式会社荏原製作所
发明人： SAITO NOBUTOSHI , KURIYAMA FUMIO , KOKAI REI , KOBA TAKASHI , YAJIMA RIICHI
IPC分类号： C25D3/48 , C25D19/00 , C25D21/12
摘要： PROBLEM TO BE SOLVED: To provide a technique by which gold strike plating can be obviated without deteriorating the adhesion between a metal layer of base nickel or the like and a gold plating layer.
SOLUTION: In the direct gold plating method, at the time when noncyanogen based gold electroplating is applied to the surface of a metal conducting layer baser than gold as an electronic element, it is poured into a noncyanogen based gold plating bath, thereafter, power supply is performed in order of nonconducting, conducting at a relatively high current density and conducting at a relatively low current density, and plating is applied thereto. Further, the direct gold plating device is provided with a pretreatment tank, one or more washing tanks, a nickel plating tank, one or more washing tanks, a gold plating tank and one or more washing tanks in this order. A power source for conducting to an anode in the gold plating tank comprises a control means for performing power supply in order of nonconducting, conducting at a relatively high current density and conducting at a relatively low current density.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供一种可以消除金触镀的技术，而不会降低基底镍等的金属层与镀金层之间的粘合性。解决方案：在直接镀金方法中，当将非氰化物基金电镀施加到比金作为电子元件的金属导电层的表面时，将其倒入基于非氰化物的镀金液中，之后电源以不导电的方式进行，以较高的电流密度进行导通，并以相对低的电流密度进行导通，对其施加电镀。此外，直接镀金装置依次具有预处理槽，一个或多个洗涤槽，镀镍槽，一个或多个洗涤槽，镀金槽和一个或多个洗涤槽。用于对镀金槽中的阳极进行导电的电源包括控制装置，用于以不导电的顺序执行电源，以相对高的电流密度传导并以相对较低的电流密度传导。版权所有（C）2005，JPO＆NCIPI

10. 发明专利

JP2004300462A Plating method and plating apparatus 审中-公开
公开(公告)号：JP2004300462A
公开(公告)日：2004-10-28
申请号：JP2003091751
申请日：2003-03-28
申请人： Ebara Corp , 株式会社荏原製作所
发明人： KOKAI REI , KAKU YOKOU , KURIYAMA FUMIO
IPC分类号： C23C18/18 , C23C18/31 , C25D7/12 , C25D17/06 , C25D21/10 , C25D21/18
摘要： PROBLEM TO BE SOLVED: To provide a method for plating a substrate with high reliability, which solves the unevenness of a flow rate in a plating solution and of a current density, to improve the thickness uniformity of a plated film and to plate the substrate at a high rate, and to provide an apparatus therefor.
SOLUTION: This plating method comprises plating the surface W1 to be plated of the substrate W immersed in a plating solution Q, while rotating the substrate of a vertically erected state; and making a part of a shaft 61 installed on a substrate holder 60 for holding the substrate W projecting from the sidewall of a plating tank 10 toward the outside, noncontact with the sidewall of the plating tank 10, to prevent the formation of particles and crystals of the plating solution due to the contact.
COPYRIGHT: (C)2005,JPO&NCIPI

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