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1. 发明专利

JP2013064202A Plating apparatus 有权
标题翻译：电镀设备
公开(公告)号：JP2013064202A
公开(公告)日：2013-04-11
申请号：JP2013004855
申请日：2013-01-15
申请人： Ebara Corp , 株式会社荏原製作所
发明人： SAITO NOBUTOSHI , FUJIKATA JUNPEI , YAMAMOTO TADAAKI , KAMIMURA KENJI
IPC分类号： C25D17/08 , C25D17/00 , C25D21/10
CPC分类号： C25D21/10 , C25D17/001 , C25D17/007 , C25D17/008 , C25D21/12 , H01L2924/0002 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To form a bump having a flat top shape or a metal film having preferable in-plane uniformity even under the condition of high current density when performing plating of an object to be plated (substrate) such as a semiconductor wafer.SOLUTION: A plating apparatus includes: an anode 26 which is arranged by being immersed in a plating liquid Q in a plating tank 10; a holder 24 which retains an object to be plated W and arranges the same at the position opposite to the anode; a paddle 32 which reciprocally moves in parallel with the object to be plated and agitates the plating liquid; a slit plate 96 for fixing an adjustment plate, which includes a plurality of slit portions extending in the vertical direction at a predetermined pitch; and an adjustment plate 34 which includes an opening for controlling expansion of an electric field, wherein the adjustment plate is attached to the plating tank such that the position of the adjustment plate is adjustable by inserting the side edge portion thereof into an optional slit portion of the slit plate for fixing an adjustment plate.
摘要翻译：要解决的问题：即使在高电流密度的条件下进行镀覆对象（基板）的电镀时，也可以形成具有平坦顶部形状的凸块或具有优选的面内均匀性的金属膜，半导体晶片。解决方案：电镀装置包括：阳极26，其通过浸入电镀槽10中的电镀液体Q中而布置; 保持物体W的保持件24，并将其布置在与阳极相对的位置; 与被镀物体平行移动的桨32，搅拌镀液; 用于固定调节板的狭缝板96，其包括沿着垂直方向以预定间距延伸的多个狭缝部分; 以及调节板34，其包括用于控制电场扩展的开口，其中调节板附接到电镀槽，使得调节板的位置可通过将其侧边缘部分插入到可选的狭缝部分中来调节用于固定调节板的狭缝板。版权所有（C）2013，JPO＆INPIT

2. 发明专利

JP2010185122A Member for passing electric current to anode holder, and anode holder 有权
标题翻译：将电流通入阳极支架和阳极支架的会员
公开(公告)号：JP2010185122A
公开(公告)日：2010-08-26
申请号：JP2009031526
申请日：2009-02-13
申请人： Ebara Corp , 株式会社荏原製作所
发明人： KAMIMURA KENJI , SAITO NOBUTOSHI , MINAMI YOSHIO
IPC分类号： C25D17/12 , C25D7/12 , C25D17/10 , C25D21/00
摘要： PROBLEM TO BE SOLVED: To provide a member for passing an electric current to an anode holder, which can uniformly pass the electric current over the whole anode, can uniformly dissolve the anode and can stably hold the anode, and to provide an anode holder. SOLUTION: The member 1 for passing the electric current to the anode holder, which is used in a plating apparatus in which a substrate and the anode are vertically arranged in a plating tank so as to face each other, and supplies the electric current to the anode 5, includes: a contact member 2 which can come in contact with substantially the entire surface of the rear face of the anode 5 and is made from a discoidal electroconductive material; and a connecting member 3 which connects the contact member 2 with a power feeding part of the plating apparatus and is made from an electroconductive material. The connecting member 3 extends from the center of the rear face of the face at which the contact member 2 comes in contact with the anode 5. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：为了使能够均匀地使整个阳极上的电流通过阳极保持器的电流的构件能够均匀地溶解阳极并且可以稳定地保持阳极，并且提供一种阳极座
解决方案：用于将电流传递到阳极保持器的构件1，其用于将基板和阳极垂直布置在电镀槽中以彼此面对的电镀设备中，并将电电流到阳极5包括：接触构件2，其可以与阳极5的背面的基本上整个表面接触并且由盘状导电材料制成; 以及连接构件3，其将接触构件2与电镀装置的供电部分连接并由导电材料制成。连接构件3从接触构件2与阳极5接触的面的背面的中心延伸。（C）2010，JPO＆INPIT

3. 发明专利

JP2009108360A Anode for electroplating and electroplating apparatus 有权
标题翻译：电镀和电镀装置的阳极
公开(公告)号：JP2009108360A
公开(公告)日：2009-05-21
申请号：JP2007280580
申请日：2007-10-29
申请人： Ebara Corp , 株式会社荏原製作所
发明人： KAMIMURA KENJI , SAITO NOBUTOSHI
IPC分类号： C25D17/12 , C25D17/00
摘要： PROBLEM TO BE SOLVED: To form a plating film which has improved in-plane uniformity of a film thickness on the surface (the surface to be coated) of a substrate arranged to face an anode by controlling current flowing inside without increasing any power source of plating, with a relatively simple structure. SOLUTION: In the anode 32 for electroplating which faces the coating surface of the substrate W and is arranged in a plating solution Q, a first insoluble anode 36 comprising a first insoluble material and a second insoluble anode 38 comprising a second insoluble material having an oxygen generation overvoltage different from that of the first insoluble material are electrically conducted to each other and arranged in a planar state. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：通过控制流入内部的电流而形成电镀膜，其通过控制流过内部的电流而提高布置在面对阳极的基板的表面（待涂布表面）上的膜厚度的面内均匀性，电镀电源，结构相对简单。解决方案：在面向衬底W的涂层表面并且布置在镀液Q中的电镀阳极32中，包含第一不溶物质的第一不溶性阳极36和包含第二不溶性物质的第二不溶性阳极38 具有不同于第一不溶物质的氧生成过电压彼此电导通并且布置成平面状态。版权所有（C）2009，JPO＆INPIT

4. 发明专利

JP2008045179A Plating apparatus and plating method 审中-公开
标题翻译：电镀设备和电镀方法
公开(公告)号：JP2008045179A
公开(公告)日：2008-02-28
申请号：JP2006223064
申请日：2006-08-18
申请人： Ebara Corp , 株式会社荏原製作所
发明人： KAMIMURA KENJI , SAITO NOBUTOSHI , KURIYAMA FUMIO
IPC分类号： C25D17/06 , C25D17/00
摘要： PROBLEM TO BE SOLVED: To provide a plating apparatus which can easily and reliably remove a product from the surface of a substrate holder which has been deposited on the surface of the substrate holder and generated by reactions of different plating solutions generated when having immersed the whole substrate holder into the different metal plating solutions to sequentially plate the substrate holder with different metals, and to provide a plating method.
SOLUTION: This plating apparatus comprises: a plurality of plating tanks 34a and 34b for storing different types of the plating solutions; the substrate holder 18 which freely opens and closes, and makes a substrate sequentially contact with the different types of the plating solutions in a state of holding the substrate; and a section 26 for washing the substrate holder which washes the substrate holder 18 in an open state without holding the substrate.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种电镀设备，其可以容易且可靠地从已经沉积在衬底保持器的表面上的衬底保持器的表面去除产物，并且通过在具有将整个基板保持器浸入不同的金属电镀溶液中，以不同的金属顺序地对基板保持器进行平板化，并提供电镀方法。解决方案：该电镀装置包括：用于存储不同类型的电镀液的多个电镀槽34a和34b; 在保持基板的状态下自由地打开和关闭衬底保持器18，并使基板顺序地接触不同类型的电镀液; 以及用于洗涤衬底保持器的部分26，其在打开状态下洗涤衬底保持器18而不保持衬底。版权所有（C）2008，JPO＆INPIT

5. 发明专利

JP2009155727A Plating apparatus and plating method 有权
标题翻译：电镀设备和电镀方法
公开(公告)号：JP2009155727A
公开(公告)日：2009-07-16
申请号：JP2008305978
申请日：2008-12-01
申请人： Ebara Corp , 株式会社荏原製作所
发明人： SAITO NOBUTOSHI , FUJIKATA JUNPEI , YAMAMOTO TADAAKI , KAMIMURA KENJI
IPC分类号： C25D21/10 , C25D7/12
CPC分类号： C25D21/10 , C25D17/001 , C25D17/007 , C25D17/008 , C25D21/12 , H01L2924/0002 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide an apparatus and a method of forming a bump having a flat top shape or forming a metal film having preferable in-plane uniformity even under a condition of high current density when performing the plating of an object (substrate) to be plated such as a semiconductor wafer. SOLUTION: The plating apparatus includes: a plating tank 10 which retains a plating liquid Q; an anode 26 which is immersed in the plating liquid in the plating tank; a holder which retains the plating object W and arranges the plating object on a position opposite to an anode; a paddle 32 which is made of a planar member having a grid part 32b, is arranged between the anode and the plating object retained by the holder, reciprocates parallel to the plating object and agitates the plating liquid; and a control part 46 which controls a paddle driving part 42 for driving the paddle 32. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种在进行电镀时，即使在高电流密度的条件下，形成具有平坦顶部形状的凸块或形成具有优选的面内均匀性的金属膜的装置和方法（基板），例如半导体晶片。电镀装置包括：电镀槽10，其保持镀液Q; 阳极26，其浸在电镀槽中的电镀液中; 保持电镀对象W并将电镀对象布置在与阳极相对的位置的保持器; 在阳极和由保持器保持的电镀对象之间配置有由具有栅格部分32b的平面构件制成的桨32，与电镀对象平行地往复运动并搅动电镀液; 以及控制部分46，其控制用于驱动桨32的桨驱动部分42.版权所有：（C）2009，JPO＆INPIT

6. 发明专利

JP2009102674A Plating method and plating apparatus 有权
标题翻译：电镀方法和镀膜装置
公开(公告)号：JP2009102674A
公开(公告)日：2009-05-14
申请号：JP2007273423
申请日：2007-10-22
申请人： Ebara Corp , 株式会社荏原製作所
发明人： KAMIMURA KENJI , KURIYAMA FUMIO , SAITO NOBUTOSHI , TAKEDA SACHIKO
IPC分类号： C25D21/12 , C25D21/10
CPC分类号： H01L2224/11
摘要： PROBLEM TO BE SOLVED: To provide a plating method which can easily form a plated film having a desired composition, and to provide a plating apparatus. SOLUTION: The plating method comprises the steps of: immersing a semiconductor wafer 23 and an anode 25 into a plating liquid (Q) containing two or more metal ions; and applying an electric current to the semiconductor wafer 23 to plate a surface 23a to be plated of the semiconductor wafer 23 with the metal. The plating apparatus therefor is also disclosed. The plating method includes increasing a current density of the electric current to be applied as a plating period of time elapses, or decreasing a rate of stirring the plating liquid (Q) by a paddle 29 as a plating period of time elapses. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种可以容易地形成具有所需组成的镀膜的电镀方法，并提供电镀装置。电镀方法包括以下步骤：将半导体晶片23和阳极25浸入含有两种或更多种金属离子的电镀液体（Q）中; 并向半导体晶片23施加电流，以使金属镀覆半导体晶片23的表面23a。还公开了其电镀装置。电镀方法包括随着电镀时间的延长而增加要施加的电流的电流密度，或者随着电镀时间的过去，通过桨形件29降低电镀液（Q）的搅拌速度。版权所有（C）2009，JPO＆INPIT

7. 发明专利

JP2007297652A Plating method and plating apparatus 审中-公开
标题翻译：电镀方法和镀膜装置
公开(公告)号：JP2007297652A
公开(公告)日：2007-11-15
申请号：JP2006124213
申请日：2006-04-27
申请人： Ebara Corp , 株式会社荏原製作所
发明人： KAMIMURA KENJI , SAITO NOBUTOSHI , KURIYAMA FUMIO
IPC分类号： C25D7/12 , C25D5/18 , H01L21/288 , H01L21/60
摘要： PROBLEM TO BE SOLVED: To provide a plating method and a plating apparatus, wherein abnormal deposition caused in a plated film can be effectively prevented/suppressed within a range where the abnormal deposition does not extremely affect the number of treated pieces of substrates per unit time.
SOLUTION: A semiconductor wafer 3 and an anode 5 are dipped in a plating solution Q containing metal ions, and then metal plating is applied on the surface 3a to be plated of the semiconductor wafer 3 by supplying an electric current between the semiconductor water 3 and the anode 5. A process comprising continuously supplying an electric current between the semiconductor water 3 and the anode 5 until the thickness of a plated film becomes 1-20 μm and then stopping current supply for 1 s to 20 min is repeated several times, during which the plating solution Q in the vicinity of the surface 3a to be plated is stirred by a paddle 9.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：为了提供一种电镀方法和电镀装置，其中可以在异常沉积不会极大影响处理的基片数量的范围内有效地防止/抑制在镀膜中引起的异常沉积每单位时间。解决方案：将半导体晶片3和阳极5浸入含有金属离子的镀液Q中，然后通过在半导体晶片3之间提供电流，在半导体晶片3的电镀表面3a上施加金属电镀水3和阳极5.一种包括在半导体水3和阳极5之间连续供应电流直到镀膜厚度为1-20μm，然后停止电流供应1秒至20分钟的方法被重复几次时间，在此期间，待镀覆表面3a附近的电镀液Q被桨9搅拌。版权所有（C）2008，JPO＆INPIT

8. 发明专利

JP2005251858A Device and method for heat-treating substrate 审中-公开
标题翻译：用于热处理基板的装置和方法
公开(公告)号：JP2005251858A
公开(公告)日：2005-09-15
申请号：JP2004057656
申请日：2004-03-02
申请人： Ebara Corp , 株式会社荏原製作所
发明人： CHIKAMORI YUSUKE , KAMIMURA KENJI
IPC分类号： H01L21/3205 , H01L21/304
摘要： PROBLEM TO BE SOLVED: To provide a device and method for heat-treating substrate, by which heat treatment can be performed in a short time, because a metal film of copper etc., is stabilized continuously, after the metal film has been formed on a substrate in a film formation step.
SOLUTION: The substrate heat-treating device is used for stabilizing the metallic film, after the film is formed on the substrate 3, and the device is provided with a substrate-holding head 4 which holds the substrate 3, a substrate support base 7 positioned to face the head 4, and a heating means which heats the metal film formed on the substrate 3. While the substrate 3 being held by the substrate-holding head 4 is brought into contact with the substrate support base 7, the metal film of the substrate 3 is heat-treated, by heating the film with the frictional heat generated between the substrate 3 and a polishing pad 1, due to the relative motion between the substrate 3 and substrate support base 7.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：为了提供一种用于热处理基板的装置和方法，由于铜等的金属膜在金属膜具有在成膜步骤中在基板上形成。解决方案：在膜形成在基板3上之后，基板热处理装置用于稳定金属膜，并且该装置设置有保持基板3的基板保持头4，基板支撑基座7与头4相对配置，加热装置加热形成在基板3上的金属膜。当由基板保持头4保持的基板3与基板支撑基座7接触时，金属由于基板3和基板支撑基座7之间的相对运动，通过在基板3和抛光垫1之间产生的摩擦热加热薄膜来对基板3进行热处理。版权所有（C） C）2005，JPO＆NCIPI

9. 发明专利

JP2013122091A Plating apparatus 有权
标题翻译：电镀设备
公开(公告)号：JP2013122091A
公开(公告)日：2013-06-20
申请号：JP2013004854
申请日：2013-01-15
申请人： Ebara Corp , 株式会社荏原製作所
发明人： SAITO NOBUTOSHI , FUJIKATA JUNPEI , YAMAMOTO TADAAKI , KAMIMURA KENJI
IPC分类号： C25D21/10 , C25D7/12 , C25D17/10 , H01L21/288 , H01L21/60
CPC分类号： C25D21/10 , C25D17/001 , C25D17/007 , C25D17/008 , C25D21/12 , H01L2924/0002 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To form a bump having a flat top or can form a metal film having a good in-plane uniformity even when the plating of plating objects, such as a semiconductor wafer, is carried out under high-current density conditions.SOLUTION: The plating apparatus includes: a plating tank 10 for holding a plating solution Q; an anode 26 to be immersed in the plating solution in the plating tank 10; a holder 24 for holding a plating object W and disposing the plating object at a position opposite the anode; a paddle 32, disposed between the anode and the plating object held by the holder, which reciprocates parallel to the plating object to stir the plating solution; and a control section 46 for controlling a paddle drive section 42 which drives the paddle. The plating tank is separated into a plating object processing chamber 84 and a plating solution distribution chamber 86 by a separation plate 80 having plating solution passage holes thereinside. The plating solution distribution chamber is provided with a shield plate 82 for regulating an electric field while ensuring distributed flows of the plating solution.
摘要翻译：要解决的问题：为了形成具有平坦顶部的凸块或者即使当在大电流下执行诸如半导体晶片的电镀对象的电镀时，也可以形成具有良好的面内均匀性的金属膜密度条件。电镀装置包括：用于保持电镀液Q的电镀槽10; 将阳极26浸入镀槽10中的镀液中; 用于保持电镀对象W的保持器24，并且将电镀对象设置在与阳极相对的位置; 设置在阳极和由保持器保持的电镀对象之间的平板32，其平行于电镀对象往复运动以搅拌电镀液; 以及用于控制驱动桨叶的桨驱动部42的控制部46。通过在其内部具有电镀液通道孔的分隔板80将电镀槽分离成电镀对象处理室84和电镀液分配室86。电镀溶液分配室设有用于调节电场的屏蔽板82，同时确保电镀溶液的分布流动。版权所有（C）2013，JPO＆INPIT

10. 发明专利

JP2009155726A Plating apparatus and plating method 有权
标题翻译：电镀设备和电镀方法
公开(公告)号：JP2009155726A
公开(公告)日：2009-07-16
申请号：JP2008292174
申请日：2008-11-14
申请人： Ebara Corp , 株式会社荏原製作所
发明人： SAITO NOBUTOSHI , FUJIKATA JUNPEI , YAMAMOTO TADAAKI , KAMIMURA KENJI
IPC分类号： C25D21/10 , C25D5/08 , C25D7/12 , C25D17/10 , C25D21/00 , H01L21/60
CPC分类号： C25D21/10 , C25D17/001 , C25D17/007 , C25D17/008 , C25D21/12 , H01L2924/0002 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a method of forming a bump having a flat top shape or forming a metal film having preferable in-plane uniformity even under a condition of high current density when performing the plating of an object (substrate) to be plated such as a semiconductor wafer.
SOLUTION: A plating apparatus includes: a plating tank 10 which retains a plating liquid Q; an anode 26 which is immersed in the plating liquid in the plating tank; a holder 24 which retains the object W to be plated and arranges the object to be plated on a position opposite to an anode; a paddle 32 which is arranged between the anode and the object to be plated retained by the holder, is reciprocally moved in parallel with the object to be plated and agitates the plating liquid; and a control part which controls a paddle driving part for driving the paddle; wherein the control part controls the paddle driving part such that an average absolute value of the moving speed of the paddle falls into the range of 70 to 100 cm/sec.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：为了提供一种形成具有平坦顶部形状的凸起或形成具有优选的面内均匀性的金属膜的方法，即使在进行对象（基板）的电镀时，在高电流密度的条件下，例如半导体晶片等。电镀装置包括：电镀槽10，其保持镀液Q; 阳极26，其浸在电镀槽中的电镀液中; 保持要被电镀的物体W并将被镀物体排列在与阳极相对的位置的保持件24; 布置在由保持器保持的阳极和待电镀物体之间的桨32与被镀物体平行移动并搅拌电镀液; 以及控制部，其控制用于驱动所述桨的桨驱动部; 其中所述控制部分控制所述桨驱动部分，使得所述桨叶的移动速度的平均绝对值落在70-100cm / sec的范围内。版权所有（C）2009，JPO＆INPIT

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