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1. 发明专利

JP2003321298A SiC SINGLE CRYSTAL AND METHOD FOR PRODUCING THE SAME, SiC WAFER WITH EPITAXIAL FILM AND METHOD FOR PRODUCING THE SAME, AND SiC ELECTRONIC DEVICE 有权
标题翻译： SiC单晶及其制造方法，具有外延膜的SiC波形及其制造方法和SiC电子器件
公开(公告)号：JP2003321298A
公开(公告)日：2003-11-11
申请号：JP2002128725
申请日：2002-04-30
申请人： Denso Corp , Toyota Central Res & Dev Lab Inc , 株式会社デンソー , 株式会社豊田中央研究所
发明人： NAKAMURA DAISUKE , KONDO HIROYUKI
IPC分类号： C30B29/36 , H01L21/205
摘要： PROBLEM TO BE SOLVED: To obtain a high-quality SiC single crystal containing substantially no dislocation and defects and to provide a method for producing the same; to obtain an SiC wafer with an epitaxial film containing substantially no defects and dislocation in the epitaxial film and to provide a method for producing the same; and to provide an SiC device showing substantially no occurrence of leak current and reduction of withstand voltage.
SOLUTION: A first seed crystal is prepared in which the plane inclined 1°-90° from the [0001] plane is exposed as a first growing plane. An n-th seed crystal is prepared which has an n-th inclined direction at a location 45°-135° rotated from an (n-1)-th inclined direction about as a rotation axis and in which the plane inclined 1°-90° from the [0001] plane is exposed as an n-th growing plane. An n-th growing crystal is prepared by growing the SiC single crystal on the n-th growing plane of the n-th seed crystal.
COPYRIGHT: (C)2004,JPO
摘要翻译：要解决的问题：为了获得基本上不含位错和缺陷的高质量SiC单晶，并提供其制造方法; 以获得具有在外延膜中基本上不含缺陷和位错的外延膜的SiC晶片，并提供其制造方法; 并且提供基本上不发生泄漏电流和降低耐受电压的SiC器件。解决方案：制备第一晶种，其中从[0001]面倾斜1°-90°的平面作为第一生长平面暴露。准备第n个晶种，其具有从作为旋转轴的第（n-1）倾斜方向旋转的位置45°-135°处的第n个倾斜方向，并且其中平面倾斜从[0001]平面1°-90°暴露为第n个生长平面。通过在第n种子晶体的第n生长平面上生长SiC单晶来制备第n个生长晶体。版权所有（C）2004，JPO

2. 发明专利

JP2005225710A METHOD FOR MANUFACTURING SiC SINGLE CRYSTAL AND MANUFACTURING APPARATUS FOR SiC SINGLE CRYSTAL 有权
标题翻译：用于制造SiC单晶的SiC单晶和制造装置的方法
公开(公告)号：JP2005225710A
公开(公告)日：2005-08-25
申请号：JP2004035493
申请日：2004-02-12
申请人： Denso Corp , Toyota Central Res & Dev Lab Inc , 株式会社デンソー , 株式会社豊田中央研究所
发明人： KONDO HIROYUKI , MATSUI MASAKI , NAKAMURA DAISUKE
IPC分类号： C30B29/36
摘要： PROBLEM TO BE SOLVED: To provide a method for manufacturing an SiC single crystal and a manufacturing apparatus for an SiC single crystal in which a cylindrical guide member is used and a high-quality crystal can be manufactured inside the member.
SOLUTION: The method is carried out by supplying gas as a source material to an SiC seed crystal 5 placed in a growth chamber (1, 2) and growing an SiC single crystal 6 from the SiC seed crystal 5. A cylindrical guide member 7 is disposed so as to surround the growth region of the SiC single crystal 6, and the SiC single crystal 6 is grown while keeping such conditions that the temperature of the source material gas is higher than the temperature of the inner wall of the guide member 7, that the temperature of the inner wall of the guide member 7 is higher than the temperature of the outer surface of the SiC single crystal 6, and that the temperature of the outer surface of the SiC single crystal 6 is higher than the temperature of the center part of the SiC single crystal 6.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供一种SiC单晶的制造方法以及使用圆筒形引导构件的SiC单晶的制造装置，并且可以在构件内部制造高质量的晶体。解决方案：该方法通过将气体作为源材料供应到放置在生长室（1,2）中的SiC籽晶5并从SiC籽晶5生长SiC单晶6。构件7被设置为围绕SiC单晶6的生长区域，并且生长SiC单晶6，同时保持原料气体的温度高于导向件的内壁的温度构件7，引导构件7的内壁的温度高于SiC单晶6的外表面的温度，并且SiC单晶6的外表面的温度高于温度的SiC单晶6的中心部分。版权所有（C）2005，JPO＆NCIPI

3. 发明专利

JP2005179155A METHOD FOR PRODUCING SiC SINGLE CRYSTAL 有权
标题翻译：生产SiC单晶的方法
公开(公告)号：JP2005179155A
公开(公告)日：2005-07-07
申请号：JP2003425643
申请日：2003-12-22
申请人： Denso Corp , Toyota Central Res & Dev Lab Inc , 株式会社デンソー , 株式会社豊田中央研究所
发明人： GUNJISHIMA TSUKURU , NAKAMURA DAISUKE , KONDO HIROYUKI
IPC分类号： C30B29/36
摘要： PROBLEM TO BE SOLVED: To provide a method for producing a SiC single crystal by which a high-quality SiC single crystal having a large length and a large diameter can be produced in a short time.
SOLUTION: The method for producing a SiC single crystal is carried out by disposing a SiC seed crystal 3 in a growing chamber 4 and growing a bulk SiC single crystal on the growing surface 35. The growing chamber 4 used has a main body 41 where the SiC source material is supplied, an upper lid 42 disposed on the top of the body 41, and a seed housing part 425 formed in the upper lid 42 and recessed outward the growing chamber 4 is used. The SiC seed crystal 3 is embedded in the seed housing part 425 in such a manner that the growing surface 35 opposes to the production source 43 of the SiC source material while the back face 36 in the opposite side to the growing surface 35 is disposed as retreated from the inner surface 421 of the upper lid 42 in the direction away from the production source 43 of the SiC source material.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供一种可以在短时间内生产具有大长度和大直径的高质量SiC单晶的SiC单晶的制造方法。解决方案：通过将SiC籽晶3设置在生长室4中并在生长表面35上生长块状SiC单晶来进行SiC单晶的制造方法。所使用的生长室4具有主体 41，其中提供SiC源材料，设置在主体41的顶部上的上盖42和形成在上盖42中并在生长室4外侧凹入的种子收容部分425。将SiC籽晶3以这样的方式嵌入种子容纳部分425中，使得生长表面35与SiC源材料的生产源43相对，而与生长表面35相反的一侧的背面36设置为沿着远离SiC源材料的生产源43的方向从上盖42的内表面421退回。版权所有（C）2005，JPO＆NCIPI

4. 发明专利

JP2004269297A SiC SINGLE CRYSTAL AND ITS MANUFACTURING METHOD 有权
公开(公告)号：JP2004269297A
公开(公告)日：2004-09-30
申请号：JP2003060237
申请日：2003-03-06
申请人： Denso Corp , Toyota Central Res & Dev Lab Inc , 株式会社デンソー , 株式会社豊田中央研究所
发明人： NAKAMURA DAISUKE , KONDO HIROYUKI
IPC分类号： C30B29/36 , C30B25/12
摘要： PROBLEM TO BE SOLVED: To provide a method for manufacturing an SiC single crystal, by which the stress caused by fixing of an SiC seed crystal is almost avoided, the formation of macro-defects can be suppressed, and a high quality and large size SiC single crystal can be obtained; and to provide the SiC single crystal obtained by the manufacturing method.
SOLUTION: The method for manufacturing the SiC single crystal 10 comprises growing a bulk SiC single crystal on the growth surface of an SiC seed crystal 1 in a growing vessel 5. A stress relaxing material 2 for relaxing thermal stress between the seed crystal 1 and a pedestal 55 for holding the seed crystal 1 is arranged between the seed crystal 1 and the pedestal 55. It is preferable that the stress relaxing material 2 has a tensile strength of ≤10 MPa.
COPYRIGHT: (C)2004,JPO&NCIPI

5. 发明专利

JP2006001836A SiC SINGLE CRYSTAL AND SiC SEED CRYSTAL 审中-公开
标题翻译： SiC单晶和SiC晶体
公开(公告)号：JP2006001836A
公开(公告)日：2006-01-05
申请号：JP2005269379
申请日：2005-09-16
申请人： Denso Corp , Toyota Central Res & Dev Lab Inc , 株式会社デンソー , 株式会社豊田中央研究所
发明人： NAKAMURA DAISUKE , KONDO HIROYUKI
IPC分类号： C30B29/36 , C30B23/02
摘要： PROBLEM TO BE SOLVED: To provide a high quality SiC single crystal which is almost free from micropipe defects, spiral dislocations, edge dislocations and stacking faults; and to provide a seed crystal.
SOLUTION: In a first growth process, a first growth crystal is produced by using a surface having an offset angle within ±20° from {1-100} plane or a surface having an offset angle within ±20° from {11-20} plane as a first growth surface, and in an intermediate growth process, an n-growth crystal is produced by using a surface inclined from the (n-1) growth surface at an angle of 45-90° and inclined from {0001} plane at an angle of 60-90° as an n-growth surface. In the final growth process, a bulky SiC single crystal 30 wherein the spiral dislocations and the edge dislocations are reduced is grown on the final growth surface 35 by using a surface having an offset angle within ±20° from {0001}plane of the (N-1) growth crystal as the final growth surface 35.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供几乎没有微管缺陷，螺旋位错，边缘位错和堆垛层错的高质量SiC单晶; 并提供晶种。解决方案：在第一生长过程中，通过使用具有偏离角度在±20°范围内的偏离角度的表面或具有偏离角度在±20°之内的表面从ä11-20 }平面作为第一生长表面，并且在中间生长过程中，通过使用从（n-1）生长表面以45-90°的角度倾斜并从ä0001}平面倾斜的表面来生产n生长晶体以60-90°的角度作为n生长表面。在最终生长过程中，通过使用具有与（N（N））的偏移角在±20°之内的偏移角的表面，在最终生长表面35上生长其中减少螺旋位错和边缘位错的体积大的SiC单晶30 -1）生长晶体作为最终生长表面35.版权所有（C）2006，JPO＆NCIPI

6. 发明专利

JP2014002104A METHOD FOR EVALUATING SiC SINGLE CRYSTAL SUBSTRATE AND SiC EPITAXIAL WAFER, METHOD FOR MANUFACTURING SiC SINGLE CRYSTAL AND SiC EPITAXIAL WAFER, AND SiC SINGLE CRYSTAL 有权
标题翻译：用于评估SiC单晶衬底和SiC外延晶体的方法，制造SiC单晶和SiC外延晶体的方法以及SiC单晶
公开(公告)号：JP2014002104A
公开(公告)日：2014-01-09
申请号：JP2012138839
申请日：2012-06-20
申请人： Showa Denko Kk , 昭和電工株式会社 , Toyota Central R&D Labs Inc , 株式会社豊田中央研究所 , Denso Corp , 株式会社デンソー
发明人： KOYANAGI NAOKI , GUNJISHIMA TSUKURU , KONDO HIROYUKI
IPC分类号： G01N23/207 , C30B29/36
摘要： PROBLEM TO BE SOLVED: To provide a method for evaluating an SiC single crystal substrate, which is capable of evaluating a dislocation density of an SiC single crystal substrate by reflection X-ray topography without using a monochromator.SOLUTION: The method for evaluating an SiC single crystal substrate evaluates dislocation of an SiC single crystal substrate by reflection X-ray topography. The method uses MoKα rays as an X-ray source and uses an asymmetrical reflecting surface as a diffraction surface to obtain an X-ray topography image of the SiC single crystal substrate and uses the X-ray topography image to measure dislocation density of the SiC single crystal substrate.
摘要翻译：要解决的问题：提供一种用于评估SiC单晶衬底的方法，其可以通过反射X射线形貌而不使用单色仪来评估SiC单晶衬底的位错密度。解决方案：用于评估SiC的方法单晶衬底通过反射X射线形貌评估SiC单晶衬底的位错。该方法使用MoKα射线作为X射线源，使用不对称反射面作为衍射面，得到SiC单晶基板的X射线形貌图像，并使用X射线形貌图像测量SiC的位错密度单晶基板。

7. 发明专利

JP2011219336A Method and apparatus for manufacturing silicon carbide single crystal 有权
标题翻译：用于制造单晶碳化硅的方法和装置
公开(公告)号：JP2011219336A
公开(公告)日：2011-11-04
申请号：JP2010092960
申请日：2010-04-14
申请人： Denso Corp , Toyota Central R&D Labs Inc , Toyota Motor Corp , トヨタ自動車株式会社 , 株式会社デンソー , 株式会社豊田中央研究所
发明人： URAGAMI YASUSHI , KONDO HIROYUKI , ADACHI AYUMI , GUNJISHIMA TSUKURU
IPC分类号： C30B29/36
摘要： PROBLEM TO BE SOLVED: To provide an apparatus for manufacturing a silicon carbide single crystal which allows to supply an appropriate amount of carbon atoms to a SiC single crystal while suppressing mixing of an inclusion (a large mass) of carbon powder discharged from a crucible with the SiC single crystal.SOLUTION: In a hollow of a crucible 4, a cylindrical material 10 which has a diameter smaller than the inner diameter of a container body 2 and is made of metal carbide is disposed apart from an inner wall 2a of the container body 2 along the inner wall 2a on a powder raw material 8. While, on a lid member 3, a coating film 3b of metal carbide is formed on the side of the container body 2 from a seed crystal 7 of an inner wall 3a of the lid member 3. This suppresses discharge of masses of carbon powder from the lid member 3, and an appropriate amount of the carbon powder discharged from the inner wall 2a of the container body 2 is supplied to the SiC single crystal 9 during growth.
摘要翻译：要解决的问题：提供一种用于制造碳化硅单晶的装置，其允许向SiC单晶提供适量的碳原子，同时抑制从碳化硅单晶排出的夹杂物（大量）的碳粉的混合具有SiC单晶的坩埚。解决方案：在坩埚4的中空中，直径小于容器主体2的内径并且由金属碳化物制成的圆柱形材料10与容器主体2的内壁2a分开设置沿着内壁2a在粉末原料8上。同时，在盖构件3上，从容器主体2的内壁3a的晶种7形成金属碳化物的涂膜3b 从而抑制碳粉末从盖部件3的排出，在生长时向碳化硅单晶9供给适当量的从容器主体2的内壁2a排出的碳粉末。版权所有（C）2012，JPO＆INPIT

8. 发明专利

JP2011219294A Method for producing silicon carbide single crystal 有权
标题翻译：生产碳化硅单晶的方法
公开(公告)号：JP2011219294A
公开(公告)日：2011-11-04
申请号：JP2010088627
申请日：2010-04-07
申请人： Denso Corp , Toyota Central R&D Labs Inc , Toyota Motor Corp , トヨタ自動車株式会社 , 株式会社デンソー , 株式会社豊田中央研究所
发明人： KONDO HIROYUKI , ADACHI AYUMI , GUNJISHIMA TSUKURU
IPC分类号： C30B29/36 , C30B23/06
摘要： PROBLEM TO BE SOLVED: To provide a method for producing a SiC single crystal, by which cracking and distortion of the SiC single crystal are suppressed.SOLUTION: In the method for producing a SiC single crystal, projection growth wherein the SiC single crystal 6 is grown to have such a projection shape that the central part of the SiC single crystal 6 is projected from the outer edge part and recess growth wherein the central part of the SiC single crystal 6 is recessed from the outer edge part are performed in order. A tensile stress is generated in the vicinity of the central part of the SiC single crystal 6 and a compression stress is generated in the outer edge part during the projection growth, and a compression stress is generated in the vicinity of the central part of the SiC single crystal 6 and a tensile stress is generated in the outer edge part during the recess growth. Then, a reverse stress is generated when the SiC single crystal 6 is cooled. Thereby, when the SiC single crystal 6 is cooled, a region where both of the compression stress and tensile stress are generated is provided in the vicinity of the central part of the SiC single crystal 6, and a region where both of the compression stress and tensile stress are generated is provided similarly in the outer edge part. Consequently, it is possible to suppress cracking and distortion of the SiC single crystal during cooling.
摘要翻译：待解决的问题：提供一种SiC单晶的制造方法，其中SiC单晶的破裂和变形被抑制。解决方案：在SiC单晶的制造方法中，SiC单晶6生长为具有使SiC单晶6的中央部从外缘部突出的突起形状的突起生长和凹部其中SiC单晶6的中心部分从外边缘部分凹陷的生长依次进行。在SiC单晶6的中央部附近产生拉伸应力，在投影生长期间在外缘部产生压缩应力，在SiC的中心部附近产生压缩应力单晶6，并且在凹部生长期间在外边缘部分产生拉伸应力。然后，当SiC单晶6被冷却时产生反向应力。因此，当SiC单晶6被冷却时，在SiC单晶6的中央部附近设置压缩应力和拉伸应力两者的区域，压缩应力和在外边缘部分类似地设置拉伸应力。因此，可以抑制冷却时SiC单晶的开裂和变形。版权所有（C）2012，JPO＆INPIT

9. 发明专利

JP2014227319A ＳｉＣ単結晶及びその製造方法有权
标题翻译： SIC单晶及其制造方法
公开(公告)号：JP2014227319A
公开(公告)日：2014-12-08
申请号：JP2013108516
申请日：2013-05-23
申请人：株式会社豊田中央研究所 , Toyota Central R&D Labs Inc , 株式会社デンソー , Denso Corp , 昭和電工株式会社 , Showa Denko Kk
发明人： GUNJISHIMA TSUKURU , URAGAMI YASUSHI , KONDO HIROYUKI , SHONAI TOMOHIRO
IPC分类号： C30B29/36
摘要：【課題】刃状転位と基底面転位の双方を効率的に低減することが可能なSiC単結晶の製造方法、及びこの方法により得られるSiC単結晶を提供すること。【解決手段】SiC単結晶の製造方法は、(a)単結晶から、成長面のオフセット角が1?以上30?以下であるc面成長用の種結晶を切り出す種結晶切り出し工程と、(b)前記成長面上に新たな単結晶をc面成長させるc面成長工程と、をn回(n≧2)繰り返す繰り返しc面成長工程を備えている。前記種結晶の成長面は、前記n回の繰り返しの内、少なくとも1回は{0001}面内においてオフセット方向が変更される。また、前記種結晶の成長面のオフセット方向の最大角度差は、120?以下である。【選択図】図3
摘要翻译：要解决的问题：提供一种能够有效地降低边缘位错和基面位错两者的SiC单晶的制造方法以及通过该方法获得的SiC单晶。解决方案：制造SiC单晶的方法包括重复c面生长步骤，重复n次（n≥2）步骤（a）晶种切割，其中生长表面的偏移角为1°以上且30°以下的c面生长用晶种从单晶切割，（b）c面生长，其中在生长表面上生长新的单晶c平面。晶种的生长面在{0001}面中的偏移方向在n次重复中至少一次变化。晶种的生长面的偏移方向的最大角度差为120°以下。

10. 发明专利

JP2013245136A Apparatus for producing silicon carbide single crystal 有权
标题翻译：用于生产碳化硅单晶的装置
公开(公告)号：JP2013245136A
公开(公告)日：2013-12-09
申请号：JP2012120185
申请日：2012-05-25
申请人： Showa Denko Kk , 昭和電工株式会社 , Toyota Central R&D Labs Inc , 株式会社豊田中央研究所 , Denso Corp , 株式会社デンソー
发明人： KOKOI HISAO , SHIGEFUJI KEISUKE , KONDO HIROYUKI
IPC分类号： C30B29/36
摘要： PROBLEM TO BE SOLVED: To provide an apparatus for producing a silicon carbide single crystal having high temperature controllability in a crucible.SOLUTION: In an apparatus 100 for producing a silicon carbide single crystal, raw material gas formed by heating and subliming silicon carbide raw material powder 12 is supplied onto a silicon carbide seed crystal arranged in an internal space 10 of a crucible 2 comprising a plurality of crucible members and installed in a vacuum container 1, to thereby grow a silicon carbide single crystal on the silicon carbide seed crystal. The apparatus includes a heating means 4 arranged so as to enclose the outside surface of the vacuum container 1, and also includes in the vacuum container 1, a heat insulating member 6 arranged so as to enclose at least the outside surface 2B of the crucible 2, a gas-permeable member 5 permeable of leak gas from a joint part 2A between adjacent crucible members, arranged between the heat insulating member 6 and the crucible 2 and extended upward up to a position exceeding the upper end 4a of the heating means 4, and a gas-impermeable member 7 impermeable of the leak gas, arranged on the surface on the heat insulating member 6 side of the gas-permeable member 5.
摘要翻译：要解决的问题：提供一种在坩埚中具有高温可控性的碳化硅单晶的制造装置。解决方案：在用于制造碳化硅单晶的装置100中，通过加热和升华碳化硅原料形成的原料气体将粉末12供给到布置在包括多个坩埚构件的坩埚2的内部空间10中并安装在真空容器1中的碳化硅晶种上，从而在碳化硅晶种上生长碳化硅单晶。该装置包括设置成包围真空容器1的外表面的加热装置4，并且还包括在真空容器1中的绝热构件6，绝热构件6至少包围坩埚2的外表面2B 设置在绝热构件6和坩埚2之间并且向上延伸到超过加热装置4的上端4a的位置的相邻坩埚构件之间的接合部分2A可渗透泄漏气体的透气构件5，以及设置在透气部件5的隔热部件6侧的表面上的不透气体的气体不可渗透部件7。

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