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1. 发明专利

JP2008028319A Semiconductor sensor device having movable sensor structure 有权
标题翻译：具有可移动传感器结构的半导体传感器器件
公开(公告)号：JP2008028319A
公开(公告)日：2008-02-07
申请号：JP2006202010
申请日：2006-07-25
申请人： Denso Corp , 株式会社デンソー
发明人： FURUICHI TAKAMOTO
IPC分类号： H01L23/02 , G01P15/08 , H01L29/84
CPC分类号： H01L2224/32245 , H01L2224/48095 , H01L2224/48247 , H01L2224/73265 , H01L2924/181 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： PROBLEM TO BE SOLVED: To form a structure preventing an increase of chip size per chip and obtaining adhesive strength. SOLUTION: By making the adhesive surfaces in a sensor chip 1 and a protective cap 2 to be projected-recessed surfaces 1c and 2b, the adhesive area is increased compared with that in the case of a mere plane. Thereby, the large adhesive surface can be obtained without increasing the chip size of the sensor chip 1 and the size of the protective cap 2, so as to enhance the adhesive strength between the sensor chip 1 and the protective cap 2. Moreover, a heat-resistant adhesive 3 can enter the recess of the projected-recessed surfaces 1c and 2b that are formed in the sensor chip 1 and the protective cap 2, so as to suppress the extrusion of the heat-resistant adhesive 3 to the sensor structure 1a side. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：形成防止每个芯片的芯片尺寸增加并获得粘合强度的结构。解决方案：通过将传感器芯片1和保护盖2中的粘合剂表面设置为突出的凹入表面1c和2b，与仅仅是平面的情况相比，粘合剂面积增加。因此，可以在不增加传感器芯片1的芯片尺寸和保护盖2的尺寸的情况下获得大的粘合表面，从而提高传感器芯片1和保护盖2之间的粘合强度。而且，耐磨性粘合剂3可以进入形成在传感器芯片1和保护盖2中的突出凹陷表面1c和2b的凹部，以便抑制耐热粘合剂3向传感器结构1a侧的挤出。版权所有（C）2008，JPO＆INPIT

2. 发明专利

JP2014029988A Magnetic sensor 有权
标题翻译：磁传感器
公开(公告)号：JP2014029988A
公开(公告)日：2014-02-13
申请号：JP2013124820
申请日：2013-06-13
申请人： Denso Corp , 株式会社デンソー
发明人： YANO SATOSHI , FURUICHI TAKAMOTO
IPC分类号： H01L43/08 , G01R33/09
CPC分类号： G01R33/098 , G01R33/09 , G01R33/093 , H01F10/3254 , H01F10/3295 , H01L43/08
摘要： PROBLEM TO BE SOLVED: To suppress influence of leakage field from a pin layer 15 to free layers 17a and 17b in a magnetic sensor 10.SOLUTION: With respect to a wiring layer 14, the pin layer 15 is formed in a shape with a curved cross section for covering the wiring layer 14 from a side opposite to a substrate 11. With respect to the pin layer 15, the free layers 17a and 17b are arranged at a side opposite to the substrate 11. Sizes of the free layers 17a and 17b in a plane direction are set to sizes smaller than that of the pin layer 15 in the plane direction. The leakage field from the pin layer 15 can form a closed loop on the substrate 11 side (opposite to the free layers 17a and 17b with respect to the pin layer 15). Accordingly, the influence of the leakage field from the pin layer 15 to the free layers 17a and 17b can be suppressed.
摘要翻译：要解决的问题：抑制磁性传感器10中的针层15到自由层17a和17b的泄漏场的影响。解决方案：对于布线层14，销层15形成为具有弯曲横截面用于从与基板11相对的一侧覆盖布线层14.相对于引脚层15，自由层17a和17b布置在与基板11相对的一侧。自由层17a和17b的尺寸在平面方向上的尺寸设定为小于销层15在平面方向上的尺寸。来自销层15的漏电场可以在基板11侧（与自由层17a和17b相对于销层15相对）上形成闭环。因此，可以抑制从针层15到自由层17a和17b的泄漏场的影响。

3. 发明专利

JP2013064666A Magnetic sensor device and manufacturing method for the same 有权
标题翻译：磁传感器装置及其制造方法
公开(公告)号：JP2013064666A
公开(公告)日：2013-04-11
申请号：JP2011203972
申请日：2011-09-19
申请人： Denso Corp , 株式会社デンソー
发明人： FURUICHI TAKAMOTO , YOKURA HISANORI
IPC分类号： G01R33/09 , H01L43/08 , H01L43/12
摘要： PROBLEM TO BE SOLVED: To reduce influence of thermal diffusion due to magnetization even if pin magnetic layers of a plurality of magnetoresistive element parts formed on one substrate are magnetized in a given direction.SOLUTION: Magnetoresistive element parts 50 are formed above one face 11 of a substrate 10. Next, a groove 13 is cut in a part of the substrate 10 corresponding to the magnetoresistive element parts 50 so as to form a space part 14. The substrate 10 above which the magnetoresistive element parts 50 are formed is then arranged in a magnetic field whose orientation is set in a first direction, the magnetoresistive element parts 50 on one side are locally heated to be subjected to in-magnetic field annealing, and magnetization of pin magnetic layers 51 of the magnetoresistive element parts 50 is so accomplished as to be oriented in the first direction. Further in a magnetic field oriented in a second direction different from the first direction, the magnetoresistive element parts 50 on the other side are locally heated to be subjected to in-magnetic field annealing, and magnetization of the pin magnetic layers 51 of these magnetoresistive element parts 50 is so accomplished as to be oriented in the second direction.
摘要翻译：要解决的问题：即使形成在一个基板上的多个磁阻元件部件的销磁性层沿给定的方向被磁化，也可减小由于磁化引起的热扩散的影响。解决方案：磁阻元件部件50形成在基板10的一个表面11的上方。接下来，在与磁阻元件部件50对应的基板10的一部分中切割凹槽13，以形成空间部分14。然后将形成有磁阻元件部件50的基板10配置在朝向第一方向的磁场中，一边的磁阻元件部50被局部加热，进行磁场退火，磁阻元件部件50的销磁性层51的磁化被实现为沿第一方向取向。此外，在与第一方向不同的第二方向取向的磁场中，另一侧的磁阻元件部分50被局部加热以进行磁场退火，并且这些磁阻元件的销磁性层51的磁化部件50如此完成以便在第二方向上定向。版权所有（C）2013，JPO＆INPIT

4. 发明专利

JP2013044545A Magnetic sensor device and manufacturing method of the same 有权
标题翻译：磁传感器装置及其制造方法
公开(公告)号：JP2013044545A
公开(公告)日：2013-03-04
申请号：JP2011180346
申请日：2011-08-22
申请人： Denso Corp , 株式会社デンソー
发明人： FURUICHI TAKAMOTO , YOKURA HISANORI
IPC分类号： G01R33/09 , G01R33/02 , H01L43/08 , H01L43/12
摘要： PROBLEM TO BE SOLVED: To provide a magnetic sensor device capable of detecting three axial directions without combining a plurality of chips, and a manufacturing method of the magnetic sensor device.SOLUTION: A magnetic sensor device includes: a substrate 10; a base sacrificial layer 20 provided on the substrate 10; and a flexible layer 30 contacting with the base sacrificial layer 20, and having one surface 31 with an area of a part contacting with the base sacrificial layer 20 being larger than the base sacrificial layer 20. A plurality of magnetic resistance element portions 42 are provided on the flexible layer 30. A direction of magnetization of a pin magnetic layer 42a of one of the magnetic resistance element portions 42 is turned in parallel with a surface 11 of the substrate 10, thereby detecting magnetization in an X-axis direction or a Y-axis direction. The flexible layer 30 is warped in a semi-cylindrical shape from a contact place with the base sacrificial layer 20, so that the direction of the magnetization of the pin magnetic layer 42a of one of the magnetic resistance element portions 42 is tilted in the X-axis direction and the Y-axis direction, thereby detecting magnetization in a Z-axis direction.
摘要翻译：要解决的问题：提供一种能够检测三个轴向而不组合多个芯片的磁传感器装置，以及磁传感器装置的制造方法。磁传感器装置包括：基板10; 设置在基板10上的基底牺牲层20; 以及与基底牺牲层20接触的柔性层30，并且具有一个表面31，其中与基底牺牲层20接触的部分面积大于基底牺牲层20.多个磁阻部件42设置一个磁阻元件部分42的一个引脚磁性层42a的磁化方向与基板10的表面11平行地转动，从而检测X轴方向的磁化或Y 方向。柔性层30从与基底牺牲层20的接触位置以半圆柱形状弯曲，使得磁阻元件部分42之一的引脚磁性层42a的磁化方向在X 轴方向和Y轴方向，从而检测Z轴方向的磁化。版权所有（C）2013，JPO＆INPIT

5. 发明专利

JP2010025843A Pressure sensor 有权
标题翻译：压力传感器
公开(公告)号：JP2010025843A
公开(公告)日：2010-02-04
申请号：JP2008189595
申请日：2008-07-23
申请人： Denso Corp , 株式会社デンソー
发明人： FURUICHI TAKAMOTO , FUJII TETSUO
IPC分类号： G01L11/00
摘要： PROBLEM TO BE SOLVED: To provide a novel pressure sensor that is superior in corrosion resistance and inexpensive capable of extending a range of pressure sensing and adding a detecting function other than pressure.
SOLUTION: A pressure sensor 10 is constituted in such a manner that a recess 11t having a flat bottom face is formed at one surface Sa of a silicon substrate 11, a diaphragm 12 deformable by pressure is arranged so as to cover the recess 11t, a closed space Vc is formed with the recess 11t and the diaphragm 12, gas is enclosed in the closed space Vc, a heating element H and temperature measuring elements M1, M2 are arranged at the bottom face side of the recess 11t, an electrode 13 which is connected to the heating element H and the temperature measuring elements M1, M2 is arranged at the other surface Sb of the silicon substrate 11. The pressure sensor senses pressure applied to the diaphragm 12 from temperature changes of the temperature measuring elements M1, M2 with the gas heated by the heating element H as a medium.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种新颖的耐腐蚀性和廉价的压力传感器，其能够扩展一定范围的压力感测并增加除压力之外的检测功能。解决方案：压力传感器10被构造成使得在硅衬底11的一个表面Sa处形成具有平坦底面的凹部11t，通过压力可变形的隔膜12被布置成覆盖凹部如图11t所示，利用凹部11t和隔膜12形成封闭空间Vc，气体封闭在封闭空间Vc内，在凹部11t的底面侧配置有加热元件H和温度测量元件M1，M2，连接到加热元件H的电极13和温度测量元件M1，M2被布置在硅基板11的另一表面Sb处。压力传感器感测由温度测量元件M1的温度变化施加到隔膜12的压力，M2，由加热元件H加热的气体作为介质。版权所有（C）2010，JPO＆INPIT

6. 发明专利

JP2014157985A Magnetoresistive element for sensor, and sensor circuit 有权
标题翻译：传感器和传感器电路的电磁元件
公开(公告)号：JP2014157985A
公开(公告)日：2014-08-28
申请号：JP2013029151
申请日：2013-02-18
申请人： Denso Corp , 株式会社デンソー
发明人： FURUICHI TAKAMOTO , YANO SATOSHI , KANO KAZUHIKO
IPC分类号： H01L43/08 , G01R33/09 , G11B5/39 , H01F10/14 , H01F10/16 , H01F10/32 , H01L43/10
摘要： PROBLEM TO BE SOLVED: To provide a magnetic sensor 10 suitable for detection of weak magnetic field such as geomagnetism.SOLUTION: A magnetic sensor 10 comprises: a substrate 11; a pin layer 13 formed along the substrate 11 and having the magnetization direction fixed in the in-plane direction of the substrate 11; a free layer 15 formed along one side 11a of the substrate 11 and having the magnetization direction which changes while following the external magnetic field; and an intermediate layer 14 sandwiched between the pin layer 13 and free layer 15 and having the resistance which changes by the angle between the magnetization direction of the pin layer 13 and the magnetization direction of the free layer 15. Magnetization stabilization direction of the free layer is perpendicular to the free layer, and the anisotropy field of the free layer 15 in the in-plane direction is 50-75 (mT). Consequently, a TMR element suitable for detection of weak magnetic field such as geomagnetism can be configured.
摘要翻译：要解决的问题：提供适于检测诸如地磁等弱磁场的磁传感器10.解决方案：磁传感器10包括：基板11; 沿着基板11形成并具有沿基板11的面内方向固定的磁化方向的销层13; 沿着基板11的一侧11a形成的具有随着外部磁场而变化的磁化方向的自由层15; 以及夹在引脚层13和自由层15之间并具有由引脚层13的磁化方向与自由层15的磁化方向之间的角度变化的电阻的中间层14。自由层的磁化稳定方向垂直于自由层，自由层15在面内方向的各向异性场为50-75（mT）。因此，可以配置适合于检测诸如地磁的弱磁场的TMR元件。

7. 发明专利

JP2013242258A Magnetic sensor and method for manufacturing magnetic sensor 审中-公开
标题翻译：磁传感器及制造磁传感器的方法
公开(公告)号：JP2013242258A
公开(公告)日：2013-12-05
申请号：JP2012116490
申请日：2012-05-22
申请人： Denso Corp , 株式会社デンソー
发明人： YANO SATOSHI , FURUICHI TAKAMOTO
IPC分类号： G01R33/09 , H01L43/08 , H01L43/12
摘要： PROBLEM TO BE SOLVED: To improve the detection accuracy of an application angle of an external magnetic field in X-Y coordinate as a sensing object, without reducing the sensitivity of the external magnetic field in the X-Y coordinate.SOLUTION: Since a free layer and a pin layer are reversed upside down in TMR elements 10 and 20, a measurement error of an application angle of the external magnetic field in a Z direction of a resistance value of the TMR element 10, and a measurement error of an application angle of the external magnetic field in the Z direction of a resistance value of the TMR element 20 exhibit reverse characteristics. Thus, the TMR elements 10 and 20 are connected in series between a power source Vcc and the ground so that respective resistance values of the TMR elements 10 and 20 can mutually cancel a measurement error of the application angle of the external magnetic field in the Z direction. Consequently, the detection accuracy of the application angle of the external magnetic field in X-Y coordinate, which is an original sensing object, can be improved without reducing the sensitivity of the external magnetic field in the X-Y coordinate.
摘要翻译：要解决的问题：提高XY坐标中外部磁场的应用角度的检测精度作为感测对象，而不会降低XY坐标中的外部磁场的灵敏度。解决方案：由于自由层和引脚在TMR元件10和20中上下反转，TMR元件10的电阻值的Z方向上的外部磁场的施加角度的测量误差和外部磁体的施加角度的测量误差 TMR元件20的电阻值的Z方向的场具有反向特性。因此，TMR元件10和20串联连接在电源Vcc和地之间，使得TMR元件10和20的相应电阻值可以相互抵消Z中的外部磁场的施加角度的测量误差方向。因此，可以提高作为原始感测对象的X-Y坐标中的外部磁场的施加角度的检测精度，而不会降低X-Y坐标中的外部磁场的灵敏度。

8. 发明专利

JP2012017990A Magnetic sensor device 有权
标题翻译：磁传感器装置
公开(公告)号：JP2012017990A
公开(公告)日：2012-01-26
申请号：JP2010153712
申请日：2010-07-06
申请人： Denso Corp , 株式会社デンソー
发明人： FURUICHI TAKAMOTO , FUJII TETSUO , UENOYAMA HIROBUMI , NAGAO TAKASHIGE
IPC分类号： G01R33/09 , H01L43/08
摘要： PROBLEM TO BE SOLVED: To provide a magnetic sensor device capable of reducing variation in resistance values of a plurality of element parts, and to provide a method for producing the magnetic sensor device.SOLUTION: A conductor part 32 is formed on one surface 26 of a substrate 13. An insulator layer 27 having openings for a positive electrode portion and a negative electrode portion of the conductor part 32 is formed thereon, and magnetic resistance element parts 14 each including a pin magnetic layer 28 are formed on the insulator layer 27. When a current flows in the conductor part 32, forming a magnet field around the conductor part 32, and thereby direction and magnitude of magnetization of the pin magnetic layer 28 of respective magnetic resistance element parts 14 are fixed. By controlling the current flowing in the conductor part 32, resistance values of the individual resistance element parts 14 are leveled, and thereby the variation in the respective resistance values of the magnetic resistance elements 14 is reduced.
摘要翻译：要解决的问题：提供一种能够减少多个元件的电阻值变化的磁传感器装置，并提供一种用于制造磁传感器装置的方法。解决方案：导体部分32形成在基板13的一个表面26上。在其上形成具有用于正极部分和导体部分32的负极部分的开口的绝缘体层27，并且磁阻元件部分在绝缘体层27上形成有引脚磁性层28的14个。当电流在导体部32中流动时，在导体部32周围形成磁场，从而形成磁性层28的磁化方向和大小各个磁阻部件14是固定的。通过控制在导体部32中流动的电流，使各个电阻元件部14的电阻值平坦化，从而降低了电阻元件14的各个电阻值的变化。版权所有（C）2012，JPO＆INPIT

9. 发明专利

JP2010112757A Thermal type flow sensor and method for manufacturing it 有权
标题翻译：热流型传感器及其制造方法
公开(公告)号：JP2010112757A
公开(公告)日：2010-05-20
申请号：JP2008283515
申请日：2008-11-04
申请人： Denso Corp , 株式会社デンソー
发明人： FURUICHI TAKAMOTO , FUJII TETSUO
IPC分类号： G01F1/692
摘要： PROBLEM TO BE SOLVED: To provide a thermal type flow sensor of a surface treatment type the volume nonuniformity of the dead space of which is reduced, and also to provide a method for manufacturing it. SOLUTION: In the thermal type flow sensor, a heater is disposed in a part over the dead space in a first insulating film which is so formed on the surface of a substrate as to cover the dead space, and the heater and the substrate are thermally separated from each other by the dead space. The substrate is a support substrate of an SOI substrate having a constitution wherein an insulating layer including a silicon oxide film is interposed between the support substrate consisting of silicon and a semiconductor layer. The dead space is formed by removing piercingly at least a portion of the silicon oxide film in the direction of the thickness of the substrate, with the substrate used as an etching stopper, and the heater is formed of the semiconductor layer. The first insulating film consists of a material different from the silicon oxide film and is so disposed on the surface of the substrate as to cover the dead space. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种表面处理型的热式流量传感器，其死区的体积不均匀性减小，并且还提供了其制造方法。解决方案：在热式流量传感器中，将加热器设置在第一绝缘膜上的死区中的一部分中，该第一绝缘膜形成在衬底的表面上以覆盖死空间，加热器和基板通过死空间彼此热分离。衬底是SOI衬底的支撑衬底，其具有包括氧化硅膜的绝缘层插入在由硅构成的支撑衬底和半导体层之间的构造。通过在衬底的厚度方向上穿过氧化硅膜的至少一部分，使用衬底作为蚀刻停止层，并且加热器由半导体层形成，形成死区。第一绝缘膜由与氧化硅膜不同的材料构成，并且被设置在衬底的表面上以覆盖死区。版权所有（C）2010，JPO＆INPIT

10. 发明专利

JP2013242299A Magnetic sensor 有权
标题翻译：磁传感器
公开(公告)号：JP2013242299A
公开(公告)日：2013-12-05
申请号：JP2013079703
申请日：2013-04-05
申请人： Denso Corp , 株式会社デンソー
发明人： FURUICHI TAKAMOTO , YANO SATOSHI , YOKURA HISANORI
IPC分类号： G01D5/245 , G01R33/02 , G01R33/09
CPC分类号： G01R35/00 , B82Y25/00 , G01R33/093 , G01R33/096 , G01R33/098
摘要： PROBLEM TO BE SOLVED: To enhance sensitivity of a magnetic sensor 10 and reduce errors in angle measurement.SOLUTION: A TMR element 20 and a corrective AMR element 30 are connected in series between a power source Vdd and a ground. The resistance of the corrective AMR element 30 is set to eliminate an output error, which is included in the resistance of the TMR element 20, of an angle of rotation of an external magnetic field. The resistance of the corrective AMR element 30 is smaller than the resistance of the TMR element 20. A voltage which is applied from the power source Vdd to the TMR element 20 can be increased. A degree of change of the resistance according to the angle of rotation of the external magnetic field can be increased in the TMR element 20. Accordingly, a degree of change of an output of a magnetic sensor 10 according to the angle of rotation of the external magnetic field can be increased. As a result, the sensitivity of the magnetic sensor 10 can be enhanced.
摘要翻译：要解决的问题：提高磁传感器10的灵敏度并减小角度测量误差。解决方案：TMR元件20和校正AMR元件30串联连接在电源Vdd和地之间。校正AMR元件30的电阻被设定为消除包含在TMR元件20的电阻中的外部磁场的旋转角度的输出误差。校正AMR元件30的电阻小于TMR元件20的电阻。可以增加从电源Vdd施加到TMR元件20的电压。可以在TMR元件20中增加根据外部磁场的旋转角度的电阻的变化程度。因此，磁传感器10的输出根据外部的旋转角度的变化的程度磁场可以增加。结果，能够提高磁传感器10的灵敏度。

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