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1. 发明专利

JPH11274269A Substrate treating device 有权
标题翻译：基板处理设备
公开(公告)号：JPH11274269A
公开(公告)日：1999-10-08
申请号：JP772299
申请日：1999-01-14
申请人： Dainippon Screen Mfg Co Ltd , 大日本スクリーン製造株式会社
发明人： OTANI MASAMI , FUKUTOMI YOSHIMITSU , OKAMOTO TAKEO , OKA YOSHIJI
IPC分类号： B65G1/00 , B65G49/07 , H01L21/027 , H01L21/677 , H01L21/68
摘要： PROBLEM TO BE SOLVED: To provide a substrate treating device that can unload a substrate, from a cassette and carry the substrate to a substrate treatment part without raising and lowering the cassette. SOLUTION: A device has a substrate 11 that allows a cassette C to stand still for placing. An indexer carrier unit 30 that can move along the substrate 11 is raised and lowered for unloading a substrate W from the cassette C. The substrate W is transported to a substrate delivery position P while being placed on the support pin of the unit 30. A substrate-aligning mechanism being mounted to the unit 30 aligns the substrate, the support pin is raised, and the substrate W is raised up to the height where it can be delivered to a process carrier unit 21. The process carrier unit 21 receives the substrate W on the support pin for carrying to treatment units 231 , 232 , 241 -243 . When the substrate W is unloaded and is carried, the cassette C is not raised and lowered, thus preventing generation of dusts caused by vibration of the cassette C.
摘要翻译：要解决的问题：提供一种能够从盒子卸载基板并将基板输送到基板处理部件而不升高和降低盒子的基板处理装置。解决方案：装置具有允许盒C静止放置的基板11。能够沿着基板11移动的分度器承载单元30升降，从而将基板W从盒C卸载。在将基板W放置在单元30的支撑销上的同时将基板W输送到基板配送位置P.A 衬底对准机构安装到单元30对准衬底，支撑销升高，并且衬底W升高到可以被输送到处理载体单元21的高度。处理载体单元21接收衬底 W用于承载到处理单元231,232,241-243的支撑销上。当衬底W被卸载并被携带时，盒C不升高和降低，从而防止由盒C的振动引起的灰尘的产生。

2. 发明专利

JP2003324139A Substrate treatment apparatus 有权
标题翻译：基板处理设备
公开(公告)号：JP2003324139A
公开(公告)日：2003-11-14
申请号：JP2002129817
申请日：2002-05-01
申请人： Dainippon Screen Mfg Co Ltd , 大日本スクリーン製造株式会社
发明人： FUKUTOMI YOSHIMITSU , SUGIMOTO KENJI , ITO TAKASHI , OKAMOTO TAKEO , INAGAKI YUKIHIKO , YOSHIOKA KATSUJI , MIHASHI TAKESHI
IPC分类号： G03F7/30 , B05C9/14 , B05C13/00 , B65G1/00 , H01L21/00 , H01L21/027 , H01L21/67 , H01L21/677 , H01L21/68
CPC分类号： H01L21/67173 , H01L21/67178 , H01L21/67225 , H01L21/67276 , H01L21/67778 , Y10S414/135
摘要： PROBLEM TO BE SOLVED: To provide a substrate treatment apparatus which can enhance throughput. SOLUTION: This substrate treatment apparatus comprises an anti-reflection film treatment block 2 including a chemical treatment section, a heat treatment section, and a single main carrying mechanism independently constituted, a resist film treatment block 3, and a development block 4. In every block 2, 3 and 4, main carrying mechanisms 10A-10C carry substrates in each block, and since substrate transfer between adjacent blocks is carried out through each substrate mounting section PASS, the throughput of the substrate treatment apparatus can be enhanced. COPYRIGHT: (C)2004,JPO
摘要翻译：要解决的问题：提供可以提高生产量的基板处理装置。解决方案：该基板处理装置包括防反射膜处理块2，该防反射膜处理块2包括独立构成的化学处理部，热处理部和单个主承载机构，抗蚀剂膜处理块3和显影块4 在每个块2,3和4中，主承载机构10A-10C在每个块中承载衬底，并且由于通过每个衬底安装部PASS执行相邻块之间的衬底传送，因此可以提高衬底处理装置的生产量。版权所有（C）2004，JPO

3. 发明专利

JP2007201139A Method for polishing and manufacturing chuck 审中-公开
标题翻译：抛光和制造钻孔的方法
公开(公告)号：JP2007201139A
公开(公告)日：2007-08-09
申请号：JP2006017466
申请日：2006-01-26
申请人： Dainippon Screen Mfg Co Ltd , 大日本スクリーン製造株式会社
发明人： ONO KAZUYA , OKUMURA TAKESHI , FUKUTOMI YOSHIMITSU
IPC分类号： H01L21/683
摘要： PROBLEM TO BE SOLVED: To provide a manufacturing method of a chuck capable of remarkably reducing particle deposition to a rear face of a substrate. SOLUTION: When the chuck for fixedly holding a substrate such as a semiconductor wafer by vacuum adsorption is to be manufactured, the chuck is shaped (S1) by cutting from an ingot of a resin material in the first place. Then the surface polishing for finishing (S2) is done by means of an abrasive with a particle diameter of 1 μm or less in polishing the surface of the chuck after cutting. Thereafter, the surface of the chuck is washed (S3) by means of alcohol or a neutral detergent, and then the chuck is stored (S4) in a chuck case so that an adsorbing face of the chuck is free from contact. Then, the chuck case is vacuum-sealed S5 in which the chuck is stored. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供一种能够显着降低颗粒沉积到基板背面的卡盘的制造方法。解决方案：当制造通过真空吸附固定地保持诸如半导体晶片的基板的卡盘时，首先从树脂材料的锭切割卡盘成形（S1）。然后，通过在切割后对卡盘的表面进行研磨，用粒径为1μm以下的研磨剂进行精加工用的表面抛光（S2）。然后，通过醇或中性洗涤剂洗涤卡盘的表面（S3），然后将卡盘（S4）储存在卡盘壳体中，使得卡盘的吸附面不接触。然后，卡盘盒是真空密封的S5，其中卡盘被储存。版权所有（C）2007，JPO＆INPIT

4. 发明专利

JP2007088504A Substrate heat treatment apparatus 审中-公开
标题翻译：基材热处理设备
公开(公告)号：JP2007088504A
公开(公告)日：2007-04-05
申请号：JP2006316784
申请日：2006-11-24
申请人： Dainippon Screen Mfg Co Ltd , 大日本スクリーン製造株式会社
发明人： TSUJI MASAO , FUKUTOMI YOSHIMITSU
IPC分类号： H01L21/02
摘要： PROBLEM TO BE SOLVED: To provide a substrate heat treatment apparatus for simplifying temperature control in cooling. SOLUTION: Operating liquid is heated in a placing stand 1 by a heater 7 so that a substrate W on the placing stand 1 can be heated, and a cooling medium is supplied to a supply pipe 13, and the steam of the operating liquid in the placing stand 1 is cooled so that the substrate W can be cooled. Furthermore, the supply of the cooling medium to the supply pipe 13 is stopped after a temperature decreases to the neighborhood of a cooling temperature, and a temperature decreases in such a status that the cooling medium is not supplied afterwards so that a temperature can be smoothly changed. Therefore, even when the heat pipe-structure placing stand 1 whose thermal capacity is small is installed, temperature control in cooling can be simplified. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供一种用于简化冷却中的温度控制的基板热处理装置。解决方案：工作液体通过加热器7在放置支架1中加热，使得放置台1上的基板W能够被加热，并且将冷却介质供应到供应管13，并且操作的蒸汽将放置台1中的液体冷却，从而可以冷却基板W. 此外，在温度降低到冷却温度附近之后，向供给管13供给冷却介质的状态停止，在冷却介质以后不供给的状态下降温，使得温度平稳改变。因此，即使安装热容量小的热管结构放置台1，也能够简化冷却时的温度控制。版权所有（C）2007，JPO＆INPIT

5. 发明专利

JP2003347186A Substrate treatment device 审中-公开
标题翻译：基板处理装置
公开(公告)号：JP2003347186A
公开(公告)日：2003-12-05
申请号：JP2002149347
申请日：2002-05-23
申请人： Dainippon Screen Mfg Co Ltd , 大日本スクリーン製造株式会社
发明人： FUKUTOMI YOSHIMITSU , YOSHIOKA KATSUJI , INAGAKI YUKIHIKO
IPC分类号： G03F7/30 , H01L21/00 , H01L21/027
CPC分类号： H01L21/67017
摘要： PROBLEM TO BE SOLVED: To provide a substrate treatment device which is capable of restraining itself from remarkably increasing in height as a whole even when treatment units are stacked up in layers and feeding an air flow whose temperature is extremely accurately controlled to the treatment units.
SOLUTION: Application treatment units SC4 to SC6 are connected with an air conditioning unit ACU1 as communicating with it with a manifold 10. The manifold 10 is composed of a common pipe 10a and a plurality of dispensing pipes 10b ramifying from the common pipe 10a. The air conditioning unit ACU1 controls the temperature of air that is sent through the manifold 10 so as to make the temperature of air passing through the ramification point of the manifold 10 slightly higher than the target temperature of air at the treatment unit. A secondary heater 45 carries out a secondary heating operation so as to make the temperature of air passing through a joint between the dispensing pipe 10b and the treatment unit SC identical to the target temperature, whereby air thermally controlled with high accuracy can be supplied to the treatment unit SC. Air from the air conditioning ACU1 is ramified so as to restrain the height of the substrate treatment device as a whole.
COPYRIGHT: (C)2004,JPO
摘要翻译：要解决的问题：提供一种基板处理装置，即使在处理单元层叠并且将温度非常精确地控制的空气流供给到治疗单位。解决方案：应用处理单元SC4至SC6与空调单元ACU1连接，与歧管10连通。歧管10由公共管10a和从公共管道分支的多个分配管10b 10a。空调单元ACU1控制通过歧管10发送的空气的温度，以使通过歧管10的分支点的空气的温度略高于处理单元处的空气的目标温度。二次加热器45进行二次加热操作，以使通过分配管10b和处理单元SC之间的接头的空气的温度与目标温度相同，由此可以高精度地热控制的空气供应到治疗单元SC。空调ACU1的空气被分散，以抑制基板处理装置的整体高度。版权所有（C）2004，JPO

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