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1. 发明专利

JP2006047193A Pressure sensor 审中-公开
标题翻译：压力传感器
公开(公告)号：JP2006047193A
公开(公告)日：2006-02-16
申请号：JP2004230919
申请日：2004-08-06
申请人： Denso Corp , 株式会社デンソー
发明人： KATSUMATA TAKU , SUZUKI YASUTOSHI
IPC分类号： G01L9/00 , H01L29/84
摘要： PROBLEM TO BE SOLVED: To suppress sensitivity temperature characteristics of a semiconductor pressure sensor to the utmost.
SOLUTION: The pressure sensor for outputting a pressure sensing value corresponding to pressure applied on a diaphragm 12 on the basis of resistance value change of a gage resistor 13 comprises a semiconductor substrate 10 for forming the pressure sensing diaphragm 12, a pedestal 15 comprising glass joining the semiconductor substrate 10, and the gage resistor 13 changing a resistance value on the basis of piezo resistive effect accompanying strain of the diaphragm 12. The pressure sensor regulates: first change of a pressure sensing value caused by change of the resistance value of the gage resistor 13 due to temperature change and change of a resistance value change rate of the gage resistor 13 on the basis of the piezo resistive effect due to the temperature change; and second change of the pressure sensing value by regulating thickness and a thermal expansion coefficient of the pedestal 15 so that a difference with the second change of the pressure sensing value caused by thermal strain generated between the semiconductor substrate 10 and the pedestal 15 due to the temperature change is small.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：最大限度地抑制半导体压力传感器的灵敏度温度特性。解决方案：用于根据量规电阻器13的电阻值变化输出对应于施加在振膜12上的压力的压力感测值的压力传感器包括用于形成压力感测膜片12的半导体衬底10，基座15 包括连接半导体基板10的玻璃，以及量规电阻器13，根据伴随膜片12的应变的压阻效应来改变电阻值。压力传感器调节：由电阻值的变化引起的压力感测值的第一变化基于由温度变化引起的压电效应，量规电阻器13由于温度变化和电阻值变化率的变化而变化，以及通过调节基座15的厚度和热膨胀系数来测量压力感测值的第二变化，使得与由于半导体衬底10和基座15之间产生的热应变引起的压力感测值的第二变化的差异温度变化小。版权所有（C）2006，JPO＆NCIPI

2. 发明专利

JP2005302876A Tunnel magnetoresistive element, its manufacturing method and manufacturing equipment 审中-公开
标题翻译：隧道磁阻元件及其制造方法及制造设备
公开(公告)号：JP2005302876A
公开(公告)日：2005-10-27
申请号：JP2004114243
申请日：2004-04-08
申请人： Denso Corp , 株式会社デンソー
发明人： TERA RYONOSUKE , TOYODA INEO , SUZUKI YASUTOSHI
IPC分类号： G01R33/09 , G11B5/127 , G11B5/33 , G11B5/39 , G11C11/15 , H01L21/8246 , H01L27/105 , H01L43/08 , H01L43/10 , H01L43/12
CPC分类号： G11B5/39 , G11C11/161 , H01L43/08 , H01L43/12
摘要： PROBLEM TO BE SOLVED: To provide a tunnel magnetoresistive element obtained by sequentially forming films such as a lower electrode layer, a pinned layer, a tunnel barrier layer, a free layer and an upper electrode layer on a substrate, wherein the tunnel barrier layer which can ensure a good covering property with a small film thickness as possible. SOLUTION: The tunnel magnetic resistance effect element 1 is obtained by sequentially laminating a lower electrode layer 20, a pinned layer 30, a tunnel barrier layer 40, a free layer 50, and an upper electrode layer 60 on a substrate 10. The tunnel barrier layer 40 is composed of alumina with films being formed by an atomic layer growing method, and even if a film thickness is set thin, it is possible to increase a covering property for unevenness existing on the surface of the underlaying pinned layer 30, and to reduce variations of the film thickness of the tunnel barrier layer 40. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：解决的问题：提供通过在基板上依次形成诸如下电极层，被钉扎层，隧道势垒层，自由层和上电极层的膜而获得的隧道磁阻元件，其中隧道阻挡层，其可以确保尽可能小的膜厚度的良好的覆盖性。解决方案：通过在基板10上依次层叠下电极层20，被钉扎层30，隧道势垒层40，自由层50和上电极层60来获得隧道磁阻效应元件1。隧道势垒层40由氧化铝构成，通过原子层生长法形成膜，即使膜厚变薄，也可以增加衬垫被钉扎层30的表面上存在的不均匀性的覆盖性，并减少隧道势垒层40的膜厚度的变化。版权所有：（C）2006，JPO＆NCIPI

3. 发明专利

JP2005257474A Capacity type humidity sensor and its manufacturing method 审中-公开
标题翻译：容量型湿度传感器及其制造方法
公开(公告)号：JP2005257474A
公开(公告)日：2005-09-22
申请号：JP2004069629
申请日：2004-03-11
申请人： Denso Corp , Nippon Soken Inc , 株式会社デンソー , 株式会社日本自動車部品総合研究所
发明人： ISOGAI TOSHIKI , YOSHIDA TAKAHIKO , SUZUKI YASUTOSHI , YOKURA HISANORI , ITAKURA TOSHIKAZU
IPC分类号： G01N27/22
摘要： PROBLEM TO BE SOLVED: To providy a capacity type humidity sensor superior in the adhesion of a substrate and a humidity-sensitive film, and to provide its manufacturing method.
SOLUTION: The capacity type humidity sensor 100 is equipped with a semiconductor substrate 10, having a pair of electrods 31 and 32 arranged in the same plane so as to be spaced apart from each other, arranged in facing relation, and the humidity-sensitive film 50, comprising a polyimide polymer formed on the semiconductor substrate 10 so as to be covered between a pair of the electrodes 31 and 32 and a pair of the electrodes 31 and 32. An intermediate film 60 comprising a trialkoxysilane compound or a trichlorosilane compound covalently bonded to the humidity-sensitive film 50 is provided in between the humidity-sensitive film 50 and the surface (silicon nitride film 40) of the semiconductor substrate 10 brought into contact with the humidity-sensitive film 50. Accordingly, the semiconductor substrate 10 and the humidity-sensitive film 50 are bonded more closely by a covalent bond which is superior to the hydrogen bond in bonding energy, than before.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供一种在基板和湿度敏感膜的粘附性方面优异的容量型湿度传感器，并提供其制造方法。解决方案：容量型湿度传感器100配备有半导体基板10，该半导体基板10具有一对电极31和32，该对电极31和32被布置在相同的平面中以彼此间隔开地布置，并且湿度感光膜50包括形成在半导体衬底10上以便被覆盖在一对电极31和32与一对电极31和32之间的聚酰亚胺聚合物。包括三烷氧基硅烷化合物或三氯硅烷的中间膜60 与湿敏膜50共价键合的化合物设置在湿敏膜50和与湿敏膜50接触的半导体衬底10的表面（氮化硅膜40）之间。因此，半导体衬底 10和湿敏膜50比以前更好地通过键合能优于氢键的共价键键合。版权所有（C）2005，JPO＆NCIPI

4. 发明专利

JP2004061164A Semiconductor mechanical amount sensor 有权
公开(公告)号：JP2004061164A
公开(公告)日：2004-02-26
申请号：JP2002216648
申请日：2002-07-25
申请人： Denso Corp , 株式会社デンソー
发明人： YOSHIHARA SHINJI , TOYODA INEO , SUZUKI YASUTOSHI
IPC分类号： G01P21/00 , G01L1/22 , G01L9/00 , G01L9/06 , G01L27/00 , G01P15/12 , H01L21/00 , H01L27/14 , H01L29/84
CPC分类号： G01L9/0054 , G01L9/06 , G01L27/005 , G01L27/007
摘要： PROBLEM TO BE SOLVED: To provide a diaphragm semiconductor pressure sensor which can detect sensor output and failure diagnosis output from a bridge circuit formed by gauge resistances and can adjust offset voltage of both outputs.
SOLUTION: Each of the four gauge resistances Ra-Rd consists of separated gauge resistances Ra1-Rd2. Terminals B1 and C1, led out of wirings H2 and H9 located between the separated gauge resistances and having the same voltage when pressure is not applied thereon, can be used as failure diagnosis output terminals. In addition, each of the sensor output terminals C and B consists of three terminals Ba-Bc and Ca-Cc, respectively, and each of the three terminals led out of different positions of the wiring resistances of H3 and H8, respectively. One of the failure diagnosis output terminals B1 consists of three terminals B1a-B1c, each of which is led out from different positions of the wiring resistances of H2.
COPYRIGHT: (C)2004,JPO

5. 发明专利

JP2003315187A Manufacturing method of dynamic quantity detector 有权
标题翻译：动态数量检测器的制造方法
公开(公告)号：JP2003315187A
公开(公告)日：2003-11-06
申请号：JP2002122009
申请日：2002-04-24
申请人： Denso Corp , 株式会社デンソー
发明人： YOSHIHARA SHINJI , SUZUKI YASUTOSHI
IPC分类号： G01L9/00 , H01L21/324 , H01L21/58 , H01L21/60 , H01L29/84
CPC分类号： H01L24/83 , H01L24/32 , H01L2224/32245 , H01L2224/8319 , H01L2224/83801 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01019 , H01L2924/01024 , H01L2924/01027 , H01L2924/01033 , H01L2924/01039 , H01L2924/01056 , H01L2924/0133 , H01L2924/19043 , H01L2924/01026 , H01L2924/01028
摘要： PROBLEM TO BE SOLVED: To suppress variation in characteristics of an element formed on a processing circuit part for processing a value detected by a detection part, even if the processing circuit part is mounted on a semiconductor chip, in a manufacturing method of a dynamic quantity detector in which a semiconductor chip with a detection part for detecting an application of dynamic quantity is joined to a base via a junction layer.
SOLUTION: After the execution of a joining step of firing a glass layer 40 by heat application to join the semiconductor chip 30 to a metallic stem 20, an annealing step is executed to subject the pressure detector 100 to heat treatment using a chamber 90 into which gas including hydrogen is introduced, and a heater panel 91. The suppression of variation in hydrogen quantity included in a silicon oxide film 86 is possible through the joining step to suppress variation in the injection efficiency of transistors Tr1 and Tr2 formed on the processing circuit part 70, and suppress variation in the base current and variation in the current amplification factor of the transistors Tr1 and Tr2.
COPYRIGHT: (C)2004,JPO
摘要翻译：要解决的问题：为了抑制在处理电路部分上形成的元件的特性变化，用于处理由检测部分检测的值，即使处理电路部分安装在半导体芯片上，也以制造方法动态量检测器，其中具有用于检测动态量的应用的检测部分的半导体芯片经由接合层接合到基底。解决方案：在执行通过热施加烧制玻璃层40的接合步骤以将半导体芯片30接合到金属杆20之后，执行退火步骤以使压力检测器100使用腔室进行热处理 90，其中引入了包括氢的气体和加热器面板91.通过接合步骤可以抑制包含在氧化硅膜86中的氢气量的变化，以抑制形成在晶体管Tr1和Tr2上的晶体管Tr1和Tr2的注入效率的变化处理电路部分70，并且抑制基极电流的变化和晶体管Tr1和Tr2的电流放大因子的变化。版权所有（C）2004，JPO

6. 发明专利

JP2003302298A Mechanical quantity detector 审中-公开
标题翻译：机械数量检测器
公开(公告)号：JP2003302298A
公开(公告)日：2003-10-24
申请号：JP2002107855
申请日：2002-04-10
申请人： Denso Corp , 株式会社デンソー
发明人： YOSHIHARA SHINJI , SUZUKI YASUTOSHI
IPC分类号： G01L9/00 , H01L29/84
摘要： PROBLEM TO BE SOLVED: To reduce fluctuation in characteristics of an element formed in a processing circuit part in spite of installation of the processing circuit part, which processes a value detected by a detection part, in a semiconductor chip in a mechanical quantities detector, in which the semiconductor chip having the detection part detecting impression of a dynamic quantity is connected to a base via a connection layer.
SOLUTION: In the semiconductor chip 30, the processing circuit part 70 is arranged in the circumference part of the semiconductor chip 30. Actually, the processing circuit part 70 is arranged in an area excepting an area matching a diaphragm face 10 formed in a metal stem 20 of the semiconductor chip 30. In this way, fluctuation in characteristics of the elements such as transistors Tr1 and Tr2 formed in the processing circuit part 70 can be reduced even if the processing circuit part 70 processing a value detected by gauges 51-54 is arranged in the semiconductor chip 30 having the gauges 51-54.
COPYRIGHT: (C)2004,JPO
摘要翻译：要解决的问题：为了减少处理电路部件中形成的元件的特性的变化，尽管安装处理电路部件，该处理电路部件以半导体芯片的机械量处理由检测部件检测到的值检测器，其中具有检测到动态量的印象的检测部分的半导体芯片经由连接层连接到基座。解决方案：在半导体芯片30中，处理电路部分70布置在半导体芯片30的周围部分中。实际上，处理电路部分70布置在除了形成在其中的光阑面10的区域之外的区域中半导体芯片30的金属杆20.以这种方式，即使处理电路部分70处理由量规51检测到的值，也可以减少在处理电路部分70中形成的诸如晶体管Tr1和Tr2的元件的特性波动 -54布置在具有量规51-54的半导体芯片30中。版权所有（C）2004，JPO

7. 发明专利

JP2002310827A PRESSURE SENSOR 失效
公开(公告)号：JP2002310827A
公开(公告)日：2002-10-23
申请号：JP2001113079
申请日：2001-04-11
申请人： DENSO CORP
发明人： TANAKA HIROAKI , SUZUKI YASUTOSHI
IPC分类号： G01L9/04 , G01L9/00 , H01L29/84
摘要： PROBLEM TO BE SOLVED: To suppress the fluctuation of sensor output by temperature change as much as possible in a pressure sensor comprising a sensor chip adhered to a metal stem through a resin adhesive. SOLUTION: The resin adhesive 40 for adhering the sensor chip 10 to the metal stem 20 has a creep characteristic such that the constant B in the relational equation between creep rate V and stress σ of V=A.σB (A and B are constants) is 3.5 or less.

8. 发明专利

JP2002303557A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JP2002303557A
公开(公告)日：2002-10-18
申请号：JP2001106411
申请日：2001-04-04
申请人： NIPPON SOKEN , DENSO CORP
发明人： YOSHIDA TAKAHIKO , ODA KIYOSHIGE , INAISHI TOMIKICHI , ISHIKAWA TAKAYUKI , YORINAGA MUNEO , SUZUKI YASUTOSHI
IPC分类号： G01L9/04 , G01L9/00 , H01L29/84
摘要： PROBLEM TO BE SOLVED: To adequately suppress fluctuation of output characteristics of a semiconductor device. SOLUTION: A semiconductor pressure sensor includes a gauge element 5 for detecting a pressure, an amplifier circuit element 6 for executing a signal process of output from the gauge element 5, and an A/D conversion element 7 mounted on a stem 2. The gauge element 5 is adhered to the stem 2 and is mounted on the stem, and the amplifier circuit element 6 and the A/D conversion element 7 are mounted on the stem in a state that they are not adhered to the stem 2.

9. 发明专利

JP2002151438A METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 失效
公开(公告)号：JP2002151438A
公开(公告)日：2002-05-24
申请号：JP2001117515
申请日：2001-04-16
申请人： NIPPON SOKEN , DENSO CORP
发明人： YOSHIDA TAKAHIKO , ODA KIYOSHIGE , SUZUKI YASUTOSHI , TOYODA INEO
IPC分类号： C23C14/14 , C23C14/34 , H01L21/28 , H01L21/285 , H01L21/3205 , H01L23/52
摘要： PROBLEM TO BE SOLVED: To reduce a change with the passage of time in the output of a semiconductor device by reducing a change in the film stress with the passage of time due to heat treatment, in a method of manufacturing the semiconductor device which comprises a process of forming a metal film to be electrically connected to an element, on a semiconductor substrate formed with the element. SOLUTION: In the method of manufacturing the semiconductor device which comprises a process of forming an Al alloy interconnection film to be electrically connected to each region of a transistor, on a silicon substrate formed with the transistor, the Al alloy interconnection film is formed by sputtering, and a bias voltage applied to the silicon substrate side when sputtering is set to 0 V or ground potential. By setting the bias voltage applied to the silicon substrate side during sputtering to 0 V or ground potential, a change with the passage of time in the film stress of the Al alloy interconnection film can be reduced, and a change with the passage of time can be reduced in the output (offset) of the semiconductor device.

10. 发明专利

JPH11218543A ACCELERATION SENSOR 失效
公开(公告)号：JPH11218543A
公开(公告)日：1999-08-10
申请号：JP2134598
申请日：1998-02-02
申请人： DENSO CORP
发明人： SAKAI MINEICHI , SUZUKI YASUTOSHI , TOYODA INEO , ISHIO SEIICHIRO , MURATA MINORU
IPC分类号： G01F3/22 , G01H1/00 , G01P15/02 , G01P15/125 , G01P15/135 , H01L29/84
摘要： PROBLEM TO BE SOLVED: To prevent an acceleration sensor in which a weight moving electrode is supported by a beam section with an anchor section as a fulcrum and which detects horizontal acceleration from an electric current flowing to a fixed electrode from the weight moving electrode when the moving electrode comes into contact with the fixed electrode due to the acceleration from making erroneous detection when a vertical acceleration occurs. SOLUTION: In the acceleration sensor, an anchor section 11 and a fixed electrode 14 are fixed on a silicon substrate 26 and a weight moving electrode 12 is supported by a beam section 13 on the anchor section 11. When a horizontal acceleration occurs, the sensor detects the acceleration, because the weight moving electrode 12 comes into contact with the fixed electrode 14 and an electric current flows to the electrode 14 from the electrode 12. When a vertical acceleration occurs, on the other hand, the mobile section composed of the electrode 12 and beam section 13 is displaced in the vertical direction, but, since an oxide film 25 and a nitride film 23 are formed on the surface of the substrate 26, no electric current flows to the substrate 26 from the mobile section. Therefore, the erroneous detection of the acceleration sensor due to vertical acceleration can be prevented even when the vertical acceleration occurs.

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