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    • 2. 发明专利
    • Physical quantity sensor
    • 物理量传感器
    • JP2014021065A
    • 2014-02-03
    • JP2012162920
    • 2012-07-23
    • Denso Corp株式会社デンソー
    • SUGIMOTO YOSHIMASASAKAI MINEICHIARIKI FUMIYOSHI
    • G01P15/08G01C19/5755G01P15/125H01L29/84
    • H01L24/05H01L2224/05554H01L2224/49175H01L2224/73265
    • PROBLEM TO BE SOLVED: To reduce the hysteresis of a sensor output in a physical quantity sensor including a pad having aluminum films, as compared with a prior art.SOLUTION: A physical quantity sensor (11) includes: movable parts (27, 28, 29, and 46) that are formed as parts of semiconductor substrates (22 and 45) and displaced or deformed according to the application of a physical quantity; and a pad (31) as an external connection terminal, which is formed by having a metal film deposited on a part that is mechanically connected with the movable parts on the semiconductor substrates. The pad forms a multilayer structure, which includes aluminum films (31a, 31a1, and 31a2) that are formed using an aluminum simple substance and a high yield stress film (31b) that is formed using a metal material having a higher yield stress than aluminum.
    • 要解决的问题:与现有技术相比,减少包括具有铝膜的焊盘的物理量传感器中的传感器输出的滞后。物理量传感器(11)包括:可移动部件(27,28, 29和46),其形成为半导体衬底(22和45)的一部分并且根据物理量的应用而移位或变形; 以及作为外部连接端子的焊盘(31),其通过在半导体基板上与可移动部分机械连接的部分上沉积有金属膜而形成。 衬垫形成多层结构,其包括使用铝单体形成的铝膜(31a,31a1和31a2)和使用比铝高的屈服应力的金属材料形成的高屈服应力膜(31b) 。
    • 3. 发明专利
    • Acceleration sensor device
    • 加速传感器装置
    • JP2013160559A
    • 2013-08-19
    • JP2012020880
    • 2012-02-02
    • Denso Corp株式会社デンソー
    • SAKAI MINEICHI
    • G01P15/125H01L29/84
    • PROBLEM TO BE SOLVED: To provide an acceleration sensor device improved in detection accuracy of acceleration.SOLUTION: An acceleration sensor device has: a left weight portion (25) and a right weight portion (26) supported by a first anchor (18); first electrodes (22) formed on those weight portions and second electrodes (23) respectively supported by two second anchors (19); a coupling beam (24) for coup;ing the first anchor (18), and the left weight portion (25) and the right weight portion (26); and a conductive layer (30) laminated on one of the two electrodes. A first capacitor is composed of the first electrode (22) formed on the left weight portion (25), the second electrode (23) opposing to the first electrode (22), and the conductive layer (30). A second capacitor is composed of the first electrode (22) formed on the right weight portion (26), the second electrode (23) opposing to the first electrode (22), and the conductive layer (30). The magnitude and direction of acceleration is calculated on the basis of the difference between the capacitances of the first capacitor and the second capacitor.
    • 要解决的问题:提供一种提高加速度检测精度的加速度传感器装置。解决方案:一种加速度传感器装置具有:由第一锚固件(18)支撑的左重锤部分(25)和右重锤部分(26); 形成在这些配重部分上的第一电极(22)和分别由两个第二锚固件(19)支撑的第二电极(23)。 第一锚固件(18)和左重量部分(25)和右重量部分(26)的联接梁(24); 和层压在两个电极之一上的导电层(30)。 第一电容器由形成在左配重部分(25)上的第一电极(22),与第一电极(22)相对的第二电极(23)和导电层(30)组成。 第二电容器由形成在右重量部分(26)上的第一电极(22),与第一电极(22)相对的第二电极(23)和导电层(30)组成。 基于第一电容器和第二电容器的电容之差来计算加速度的大小和方向。
    • 4. 发明专利
    • Method for manufacturing semiconductor device
    • 制造半导体器件的方法
    • JP2006245387A
    • 2006-09-14
    • JP2005060381
    • 2005-03-04
    • Denso Corp株式会社デンソー
    • ABE RYUICHIROSAKAI MINEICHI
    • H01L21/301
    • PROBLEM TO BE SOLVED: To suppress the scattering of water as much as possible to prevent the adhesion of water to a sensing part when exfoliating protective sheets from chips in a method for manufacturing a semiconductor device that removes the protective sheets from the chips, after segmenting the semiconductor wafer with the protective sheet adhered so as to cover the sensing part that exposes on the semiconductor wafer into chips. SOLUTION: The method for manufacturing the semiconductor device comprises steps of preparing the semiconductor wafer 10 having the sensing part 30 on its one surface 11 side, and exfoliating and removing the protective sheet 20 from the segmented chips 100 after segmenting semiconductor wafer 10 with the dicing cut with the protective sheet 20 covering the sensing part 30 adhered to the one surface 11 side of the semiconductor wafer 10. Further, the method proceeds a step of reducing water included in a bonded part at the segmented chips 100 and the protective sheets 20 between the dicing-cut step and the exfoliation step of the protective sheets 20. COPYRIGHT: (C)2006,JPO&NCIPI
    • 要解决的问题:为了在从芯片中去除保护片的制造半导体器件的方法中,尽可能地抑制水的散射,以防止在从芯片剥离保护片时将水粘附到感测部分 在将半导体晶片与被粘附的保护片分割以将覆盖在半导体晶片上的感测部分覆盖成芯片之后。 解决方案:制造半导体器件的方法包括以下步骤:在其一个表面11侧准备具有感测部分30的半导体晶片10,并且在分割半导体晶片10之后从分段芯片100剥离和去除保护片20 其中覆盖了粘附到半导体晶片10的一个表面11侧的感测部分30的保护片20进行切割。此外,该方法进行在分段芯片100处包含在接合部分中的水的还原和保护 切割步骤和保护片20的剥离步骤之间的片材20。(C)版权所有(C)2006,JPO&NCIPI
    • 6. 发明专利
    • CAPACITIVE PHYSICAL QUANTITY SENSOR
    • JP2003240798A
    • 2003-08-27
    • JP2002041503
    • 2002-02-19
    • DENSO CORP
    • SAKAI MINEICHI
    • G01P15/125H01L29/84
    • PROBLEM TO BE SOLVED: To allow the influence on a sensor characteristic due to a process fluctuation to be reduced without deteriorating sensitivity in a capacitive acceleration sensor. SOLUTION: The capacitive acceleration sensor S1 is provided with a beam part 22 having a spring function for displacing in Y direction in accordance with applied acceleration, a movable electrode 24 integrally formed in the beam 22 having a beam shape extending in the direction orthogonal to the displacement direction Y of the beam 22 and capable of displacing along with the beam 22 in the displacement direction of the beam, and fixed electrodes 32, 42 disposed opposite to the movable electrode 24. The acceleration is detected based on a capacitance change between the movable electrode 24 and the fixed electrodes 32, 42 generated by the application acceleration. In the capacitive acceleration sensor S1, an electrode interval (d) as an interval between the movable electrode 24 and the fixed electrodes 32, 42 in the displacement direction Y of the beam 22 is identical to a beam width (b) as a width of a part extending in a direction orthogonal to the displacement direction Y in the beam 22. COPYRIGHT: (C)2003,JPO
    • 9. 发明专利
    • DYNAMIC QUANTITY SENSOR
    • JP2002040045A
    • 2002-02-06
    • JP2000220923
    • 2000-07-21
    • DENSO CORP
    • SAKAI MINEICHI
    • G01L1/14G01C19/56G01C19/5733G01P15/125H01L29/84
    • PROBLEM TO BE SOLVED: To suppress the resonance of a bar-like movable electrode and fixed electrode in detection to improve the precision of sensor output in a dynamic quantity sensor for detecting an applied dynamic quantity on the basis of the change in space between the movable electrode and fixed electrode in the application of the dynamic quantity while giving a periodically changing carrier wave signal to the movable and fixed electrodes. SOLUTION: The individual movable electrode 24 has a bar-like shape extending protrusively from a weight part 21 supported displaceably in Y-axial direction to a first silicon base 11, and the individual fixed electrode 31, 32 has a bar-like shape cantilever-supported by the first silicon base 11 and having a side surface extending protrusively so as to be opposite to the side surface of the movable electrode 24, wherein 1/an integer times the natural frequency in the bending and vibration of the movable electrode 24 and the fixed electrodes 31 and 32 is out of the frequency of a carrier wave signal.