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1. 发明专利

JP2010063378A Cell culture carrier 有权
标题翻译：细胞培养载体
公开(公告)号：JP2010063378A
公开(公告)日：2010-03-25
申请号：JP2008230686
申请日：2008-09-09
申请人： Covalent Materials Corp , コバレントマテリアル株式会社
发明人： IMAIZUMI YUKIFUMI , NAKANISHI HIDEO
IPC分类号： C12M3/00
CPC分类号： C12M23/12
摘要： PROBLEM TO BE SOLVED: To provide a cell culture carrier which can stably adhere cells to dents and can more three-dimensionally culture the cells.
SOLUTION: The cell culture carrier includes the first substrate 2 formed from a compact material, and the second substrate 3 which is laminated to the first substrate 2 and in which a plurality of dents 5 having openings 4 in the lamination direction α are disposed in a direction α parallel to the surface 2A of the first substrate 2, wherein each dent 5 is formed of a bottom portion 5A composed of the first substrate 2 and a side portion 5B which is composed of the second substrate 3 and whose at least surface is porous.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：待解决的问题：提供一种细胞培养载体，其可以将细胞稳定地粘附到凹陷上，并且可以更多地三维培养细胞。解决方案：细胞培养载体包括由致密材料形成的第一基底2和层叠到第一基底2上的第二基底3，并且其中具有层叠方向α上的开口4的多个凹痕5是设置在与第一基板2的表面2A平行的方向α上，其中每个凹部5由由第一基板2构成的底部5A和由第二基板3构成的侧部5B形成，并且至少表面是多孔的。版权所有（C）2010，JPO＆INPIT

2. 发明专利

JP2009224722A Compound semiconductor board 审中-公开
标题翻译：化合物半导体板
公开(公告)号：JP2009224722A
公开(公告)日：2009-10-01
申请号：JP2008070249
申请日：2008-03-18
申请人： Covalent Materials Corp , コバレントマテリアル株式会社
发明人： ABE YOSHIHISA , KOMIYAMA JUN , SUZUKI SHUNICHI , OISHI KOJI , YOSHIDA AKIRA , NAKANISHI HIDEO
IPC分类号： H01L21/205 , H01L21/203 , H01L21/338 , H01L29/778 , H01L29/812
摘要： PROBLEM TO BE SOLVED: To provide a compound semiconductor substrate includes an intermediate layer which has electrical insulating properties and proper thermal conductivity.
SOLUTION: The compound semiconductor substrate includes: an Si single crystal substrate 100 having a crystal plane orientation of {111}; the intermediate layer 110, which is formed on the surface of the Si single-crystal substrate 100, and which is structured by alternatively laminating a plurality of first layers 110a, constituted of AlN and second layers 110b constituted of MgO, in order; and a nitride semiconductor single crystal layer 120, which is formed on the intermediate layer 110 and which is constituted of one among GaN (0001), AlN (0001) and InN (0001).
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种化合物半导体衬底，其包括具有电绝缘性和适当导热性的中间层。解决方案：化合物半导体衬底包括：晶体取向为ä111}的Si单晶衬底100; 形成在Si单晶衬底100的表面上的中间层110依次由层叠由AlN构成的多个第一层110a和由MgO构成的第二层110b构成。和形成在中间层110上并由GaN（0001），AlN（0001）和InN（0001）之一构成的氮化物半导体单晶层120。版权所有（C）2010，JPO＆INPIT

3. 发明专利

JP2008184361A METHOD FOR FORMING 3C-SiC SINGLE CRYSTAL FILM 审中-公开
标题翻译：形成3C-SiC单晶膜的方法
公开(公告)号：JP2008184361A
公开(公告)日：2008-08-14
申请号：JP2007019022
申请日：2007-01-30
申请人： Covalent Materials Corp , コバレントマテリアル株式会社
发明人： ABE YOSHIHISA , SUZUKI SHUNICHI , KOMIYAMA JUN , YOSHIDA AKIRA , NAKANISHI HIDEO
IPC分类号： C30B29/36 , C23C16/02 , C23C16/42 , C30B25/18 , H01L21/205
摘要： PROBLEM TO BE SOLVED: To provide a method for simply forming a high quality 3C-SiC single crystal film flat and free from an anti-phase domain on an Si single crystal substrate.
SOLUTION: The high quality 3C-SiC single crystal film is obtained by epitaxially growing a 3C-SiC single crystal on an Si single crystal substrate whose off angle from (001) plane direction is ≥0.2° and , after an anneal treatment of the Si single crystal substrate in a 100% hydrogen atmosphere.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种在Si单晶衬底上简单地形成平坦且无反相域的高质量3C-SiC单晶膜的方法。解决方案：通过在（001）面方向的偏角≥0.2°和<1°的Si单晶衬底上外延生长3C-SiC单晶并获得高品质3C-SiC单晶膜，在100％氢气氛中对Si单晶衬底进行退火处理之后，关闭方向为<100>。版权所有（C）2008，JPO＆INPIT

4. 发明专利

JP2007266151A Compound semiconductor device 审中-公开
标题翻译：化合物半导体器件
公开(公告)号：JP2007266151A
公开(公告)日：2007-10-11
申请号：JP2006086844
申请日：2006-03-28
申请人： Covalent Materials Corp , コバレントマテリアル株式会社
发明人： KOMIYAMA JUN , ABE YOSHIHISA , SUZUKI SHUNICHI , NAKANISHI HIDEO
IPC分类号： H01L29/12 , H01L21/336 , H01L29/739 , H01L29/78
摘要： PROBLEM TO BE SOLVED: To provide a highly efficient compound semiconductor device with less energy loss. SOLUTION: An n-type low carrier concentration layer 2 with a carrier concentration as ≥10 11 /cm 3 and ≤10 16 /cm 3 , a p-type layer 3 with the carrier concentration as ≥10 11 /cm 3 and ≤10 21 /cm 3 , and an n-type high carrier concentration layer 4 with the carrier concentration ≥10 16 /cm 3 and ≤10 21 /cm 3 , are sequentially laminated on a low resistance substrate 1. The respective layers 2-4 are made to be 3C-SiC single crystal with the fault density of not more than 10 4 /cm 2 concerning a micropipe, a double-positioning domain, an anti-phase domain, a stacking fault, and a twin band. The compound semiconductor device also includes: a gate insulating film 5 which contacts at least the p-type layer 3, a control electrode 6 which contacts the gate insulating film 5 and is electrically separated from the respective layers 2-4, an upper electrode 7 which contacts at least the p-type layer 3 and the n-type high carrier concentration layer 4, and a lower electrode 8 which contacts the low resistance substrate 1. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供具有较少能量损失的高效化合物半导体器件。
解决方案：载流子浓度为≥10 11 / cm 3 和≤10 16 的n型低载流子浓度层2 载体浓度为≥10 11 / cm 3 和≤10 21
的p型层3， / SP> / cm 3 / SP>，载流子浓度≥10 16 / cm 3的n型高载流子浓度层4和≤ 10 21 / cm 3 顺序层压在低电阻基板1上。各层2-4被制成3C-SiC单晶，其故障密度关于微管，双定位域，反相域，堆垛层错和双频带的不超过10 4 / cm 2 。复合半导体器件还包括：至少与p型层3接触的栅极绝缘膜5，与栅极绝缘膜5接触并与各层2-4电气分离的控制电极6，上部电极7 其至少接触p型层3和n型高载流子浓度层4，以及与低电阻基板1接触的下电极8.版权所有（C）2008，JPO＆INPIT

5. 发明专利

JP2011103380A Compound semiconductor substrate 有权
标题翻译：化合物半导体基板
公开(公告)号：JP2011103380A
公开(公告)日：2011-05-26
申请号：JP2009257899
申请日：2009-11-11
申请人： Covalent Materials Corp , コバレントマテリアル株式会社
发明人： KOMIYAMA JUN , ISOGAI HIROMICHI , TOYODA EIJI , SUZUKI SHUNICHI , KASHIMA KAZUHIKO , SENSAI KOJI , NAKANISHI HIDEO
IPC分类号： H01L21/20 , H01L21/205
摘要： PROBLEM TO BE SOLVED: To provide a compound semiconductor substrate achieving a high level of reduction of warpage of a substrate and a high level of speed performance of a device. SOLUTION: The compound semiconductor substrate includes a substrate made of Si single crystal, an intermediate layer of nitride semiconductor formed on a main surface of the substrate, and a compound semiconductor layer of the nitride semiconductor formed on the main surface of the intermediate layer, wherein an oxygen concentration of the substrate is 0.2×10 18 to 1.4×10 18 atoms/cm 3 , a resistance value is 1000 Ωcm or higher, and a total film thickness of the intermediate layer and the compound semiconductor layer in a direction perpendicular to the main surface is 450-4500 nm. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供一种化合物半导体衬底，其实现了基板的翘曲的高水平降低和装置的高水平的速度性能。解决方案：化合物半导体衬底包括由Si单晶制成的衬底，形成在衬底的主表面上的氮化物半导体的中间层和形成在中间层的主表面上的氮化物半导体的化合物半导体层层，其中，所述基板的氧浓度为0.2×10×SP×〜1.4×10×SP原子/ cm 3，SP电阻值为1000 Ωcm以上，中间层和化合物半导体层的与主面垂直的方向的总膜厚为450〜4500nm。版权所有（C）2011，JPO＆INPIT

6. 发明专利

JP2009070872A Compound semiconductor substrate 审中-公开
标题翻译：化合物半导体基板
公开(公告)号：JP2009070872A
公开(公告)日：2009-04-02
申请号：JP2007234972
申请日：2007-09-11
申请人： Covalent Materials Corp , コバレントマテリアル株式会社
发明人： ABE YOSHIHISA , KOMIYAMA JUN , SUZUKI SHUNICHI , OISHI KOJI , YOSHIDA AKIRA , NAKANISHI HIDEO
IPC分类号： H01L21/205 , H01L33/32 , H01L33/34
摘要： PROBLEM TO BE SOLVED: To provide a compound semiconductor substrate capable of increasing the film thickness of a nitride semiconductor single crystal layer while suppressing the occurrence of cracks in the nitride semiconductor single crystal layer, crystal defects or the like. SOLUTION: The compound semiconductor substrate has a first intermediate layer 110 formed on an Si single crystal substrate 100 having a crystal plane orientation of ä111}. In the layer 110, a first metal compound layer 110a formed of one of TiC, TiN, VC and VN, and a second metal compound layer 110b formed of one of compounds different from the compound of the first metal compound layer 110a out of TiC, TiN, VC and VN are laminated on each other. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：解决的问题：提供能够提高氮化物半导体单晶层的膜厚，同时抑制氮化物半导体单晶层中的裂纹的发生，晶体缺陷等的化合物半导体基板。解决方案：化合物半导体衬底具有在晶体取向为ä111}的Si单晶衬底100上形成的第一中间层110。在层110中，由TiC，TiN，VC和VN中的一种形成的第一金属化合物层110a和由与TiC中的第一金属化合物层110a的化合物不同的化合物之一形成的第二金属化合物层110b， TiN，VC和VN彼此层叠。版权所有（C）2009，JPO＆INPIT

7. 发明专利

JP2009065082A Compound semiconductor substrate 审中-公开
标题翻译：化合物半导体基板
公开(公告)号：JP2009065082A
公开(公告)日：2009-03-26
申请号：JP2007233818
申请日：2007-09-10
申请人： Covalent Materials Corp , コバレントマテリアル株式会社
发明人： KOMIYAMA JUN , YOSHIDA AKIRA , OISHI KOJI , ABE YOSHIHISA , SUZUKI SHUNICHI , NAKANISHI HIDEO
IPC分类号： H01L21/20 , H01L21/205
摘要： PROBLEM TO BE SOLVED: To provide a compound semiconductor substrate having a nitride semiconductor single crystal layer suitable for a high speed and high breakdown voltage device by controlling carriers remaining in a compound semiconductor single crystal layer.
SOLUTION: On an Si single crystal substrate 1, a 3C-SiC single crystal buffer layer 2 with a thickness of 0.05-2 μm containing at least any one impurity element out of B, Al, V, Ni, Fe, Mg, Pt, Cr, Mo, W, Ta, Nb, Sc, Ti, Au, Co and Cu by 10
14 -10
21 /cm
3 , and a GaN single crystal buffer layer 3 with a thickness of 0.05-5 μm containing at least any one impurity element out of C, V, Ni, Fe, Mg, Pt, Cr, Mo, W, Ta, Nb, Sc, Ti, Au, Co and Cu by 10
14 -10
21 /cm
3 are laminated sequentially.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：解决的问题：通过控制残留在化合物半导体单晶层中的载流子，提供具有适用于高速和高击穿电压器件的氮化物半导体单晶层的化合物半导体衬底。解决方案：在Si单晶衬底1上，含有至少含有B，Al，V，Ni，Fe，Mg中的任何一种杂质元素的厚度为0.05-2μm的3C-SiC单晶缓冲层2 ，Pt，Cr，Mo，W，Ta，Nb，Sc，Ti，Au，Co和Cu中的至少一种。以及包含C，V，Ni，Fe，Mg，Pt，Cr，Mo，W，Ta，Nb中的至少一种杂质元素的厚度为0.05-5μm的GaN单晶缓冲层3， Sc，Ti，Au，Co和Cu依次层叠10×SP 14 / SP 3 -10 / SP 3 / cm 3。版权所有（C）2009，JPO＆INPIT

8. 发明专利

JP2009070873A Compound semiconductor substrate 审中-公开
标题翻译：化合物半导体基板
公开(公告)号：JP2009070873A
公开(公告)日：2009-04-02
申请号：JP2007234973
申请日：2007-09-11
申请人： Covalent Materials Corp , コバレントマテリアル株式会社
发明人： ABE YOSHIHISA , KOMIYAMA JUN , SUZUKI SHUNICHI , OISHI KOJI , YOSHIDA AKIRA , NAKANISHI HIDEO
IPC分类号： C23C16/32 , C30B25/18 , C30B29/38 , H01L21/205 , H01L33/32
摘要： PROBLEM TO BE SOLVED: To provide a compound semiconductor substrate capable of suppressing the occurrence of cracks, crystal defects or the like in a nitride semiconductor single crystal layer and improving the crystallinity of the nitride semiconductor single crystal layer. SOLUTION: The compound semiconductor substrate comprises a first intermediate layer 110 that is formed on an Si single crystal substrate 100 with a crystal surface orientation set to a ä111} plane while a 3C-SiC single crystal layer 110a and a metal compound layer 110b each composed of one of TiC, TiN, VC, and VN are laminated on each other in this order and the uppermost layer α is formed of either the 3C-SiC single crystal layer 110a or the metal compound layer 110b. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：解决的问题：提供能够抑制氮化物半导体单晶层中的裂纹，晶体缺陷等的发生，提高氮化物半导体单晶层的结晶性的化合物半导体基板。解决方案：化合物半导体衬底包括形成在Si单晶衬底100上的第一中间层110，晶体表面取向设定为ä111}面，而3C-SiC单晶层110a和金属化合物层由TiC，TiN，VC，VN中的一种构成的层叠体110b依次层叠，最上层α由3C-SiC单晶层110a或金属化合物层110b形成。版权所有（C）2009，JPO＆INPIT

9. 发明专利

JP2009057233A Method for evaluating compound semiconductor substrate, method for producing the same, and the compound semiconductor substrate 审中-公开
标题翻译：用于评价化合物半导体基板的方法，其制造方法和化合物半导体基板
公开(公告)号：JP2009057233A
公开(公告)日：2009-03-19
申请号：JP2007225054
申请日：2007-08-31
申请人： Covalent Materials Corp , National Institute For Materials Science , コバレントマテリアル株式会社 , 独立行政法人物質・材料研究機構
发明人： UCHIMARU TOMONORI , KANAI HIDEYUKI , KOMIYAMA JUN , SUZUKI SHUNICHI , NAKANISHI HIDEO , OSADA MINORU
IPC分类号： C30B29/38 , G01N21/65
摘要： PROBLEM TO BE SOLVED: To provide a method for evaluating a compound semiconductor substrate where, for producing a gallium nitride based compound semiconductor substrate of high quality, a fine crystal defect regarding a gallium nitride film can be easily confirmed at high precision using Raman spectroscopy, to provide a method for producing the same, and to provide the compound semiconductor substrate.
SOLUTION: Regarding the compound semiconductor substrate comprising a gallium nitride film, in the Raman spectroscopy spectra of scattered light obtained when the gallium nitride film is irradiated with monochromatic light with the excitation wavelength of 350 to 800 nm, by the appearance of the main peak in the region with the wave number of 565 to 570 cm
-1 and subpeaks caused by a crystal defect with the wave number of 100 to 700 cm
-1 , the presence of a crystal defect in the gallium nitride film is confirmed.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：为了提供一种用于评价化合物半导体衬底的方法，其中为了制造高质量的氮化镓基化合物半导体衬底，可以高精度地容易地确认关于氮化镓膜的微细晶体缺陷拉曼光谱法，以提供其制造方法，并提供化合物半导体衬底。解决方案：关于包含氮化镓膜的化合物半导体衬底，在氮化镓膜用激发波长为350至800nm的单色光照射时获得的散射光的拉曼光谱中，通过外观波数为565〜570cm -1的区域的主峰，由波数为100〜700cm -1的晶体缺陷引起的亚峰，证实在氮化镓膜中存在晶体缺陷。版权所有（C）2009，JPO＆INPIT

10. 发明专利

JP2008258561A Nitride semiconductor single crystal 有权
标题翻译：氮化物半导体单晶
公开(公告)号：JP2008258561A
公开(公告)日：2008-10-23
申请号：JP2007239008
申请日：2007-09-14
申请人： Covalent Materials Corp , コバレントマテリアル株式会社
发明人： ABE YOSHIHISA , KOMIYAMA JUN , SUZUKI SHUNICHI , YOSHIDA AKIRA , NAKANISHI HIDEO
IPC分类号： H01L21/205 , H01L21/20 , H01L33/04 , H01L33/12 , H01L33/32
摘要： PROBLEM TO BE SOLVED: To provide a nitride semiconductor single crystal which is formed on an Si substrate as a nitride semiconductor film having semi-polar (10-1m) plane (m: natural number) in a thickness of 1 μm or more and can be preferably used for a light emitting device. SOLUTION: A single crystal film 4 comprising GaN (10-1m), AlN (10-1m), or InN (10-1m) or a superlattice structure of a GaN (10-1m) and AlN (10-1m) is formed on a Si substrate 1 having an off-cut angle of 1 to 35° in the direction from the direction via a buffer layer 2a (2b) and an AlN buffer layer 3 made of at least one of SiC or BP. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种形成在Si衬底上的氮化物半导体单晶作为厚度为1μm的半极性（10-1m）面（m：自然数）的氮化物半导体膜，或并且可以优选地用于发光器件。解决方案：包括GaN（10-1m），AlN（10-1m）或InN（10-1m）或GaN（10-1m）和AlN（10-1m）的超晶格结构的单晶膜4 ）形成在具有缓冲层2a（2b）的<100>方向的<110>方向上具有1〜35°的偏角的Si基板1和由至少一个的SiC或BP。版权所有（C）2009，JPO＆INPIT

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