专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明专利

JP2006269582A Cleaning apparatus for work chuck, polishing device, cleaning method of work chuck, and manufacturing method of wafer 审中-公开
标题翻译：清洗装置，工作装置，抛光装置，清洁工作方法和制造方法
公开(公告)号：JP2006269582A
公开(公告)日：2006-10-05
申请号：JP2005083154
申请日：2005-03-23
申请人： Komatsu Electronic Metals Co Ltd , Komatsu Ltd , コマツ電子金属株式会社 , 株式会社小松製作所
发明人： YAMASHITA JUNICHI , TAKEDA HIDETOSHI
IPC分类号： H01L21/304
摘要： PROBLEM TO BE SOLVED: To provide a work chuck cleaning apparatus which can reduce the residual ratio of a foreign substance in a work chuck. SOLUTION: The work chuck cleaning apparatus is provided with a jet nozzle 65 for ejecting cleaning water to the suction surface of the work chuck 12 in its oblique direction. The jet nozzle 65 ejects the cleaning water along the turning direction of the work chuck 12 in a state of turning the work chuck 12 to clean the suction surface. The technology disclosed herein can effectively remove the foreign substance adhering to the work chuck 12. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供一种能够降低工件卡盘中的异物残留率的工件卡盘清洁装置。解决方案：工件卡盘清洁装置设有用于将清洗水沿其倾斜方向喷射到工作卡盘12的吸入表面的喷嘴65。在转动工件卡盘12以清洁吸入面的状态下，喷射喷嘴65沿着工件卡盘12的转动方向喷出清洗水。本文公开的技术可以有效地去除附着在工作卡盘12上的异物。（C）2007，JPO＆INPIT

2. 发明专利

JP2006266813A Melt collection tool, and ingot manufacturing device using melt collection tool 审中-公开
标题翻译： MELT收集工具和使用MELT收集工具的INGOT制造设备
公开(公告)号：JP2006266813A
公开(公告)日：2006-10-05
申请号：JP2005084075
申请日：2005-03-23
申请人： Komatsu Electronic Metals Co Ltd , コマツ電子金属株式会社
发明人： TAMURA MASATOSHI
IPC分类号： G01N1/10 , C30B15/00 , C30B29/06 , G01N33/20
摘要： PROBLEM TO BE SOLVED: To provide a melt collection tool capable of preventing explosive rupture of a container with a simple constitution, and collecting melt without breaking a sample, and an ingot manufacturing device using the melt collection tool.
SOLUTION: This melt collection tool 40 is equipped with a bottomed container body 41 opened upward; a hollow part 43 formed over a peripheral wall and a bottom wall of the bottomed container body 41, for dividing the bottomed container body 41 into an inner shell container 41a and an outer shell container 41b duplicated into the inner and outer sides; and a hole part 44 communicated with the hollow part 43 and penetrating the outer shell container 41b. Since the balance between the air pressure in the hollow part 43 and the atmospheric pressure in a chamber can be kept by the hole part 44, explosive rupture of the inner shell container 41a can be prevented.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供能够以简单的结构防止容器的爆炸性破裂并且不破坏样品而收集熔体的熔体收集工具，以及使用熔体收集工具的锭制造装置。解决方案：该熔体收集工具40装有向上敞开的有底容器主体41; 形成在有底的容器主体41的周壁和底壁上的中空部分43，用于将有底的容器主体41分成内壳容器41a和复制到内外侧的外壳容器41b; 以及与中空部43连通并贯通外壳容器41b的孔部44。由于可以通过孔部44保持中空部43中的空气压力与室内的大气压力之间的平衡，可以防止内壳容器41a的爆炸性破裂。版权所有（C）2007，JPO＆INPIT

3. 发明专利

JP2006179831A Method of manufacturing epitaxial silicon wafer 有权
标题翻译：制造外延硅陶瓷的方法
公开(公告)号：JP2006179831A
公开(公告)日：2006-07-06
申请号：JP2004374094
申请日：2004-12-24
申请人： Komatsu Electronic Metals Co Ltd , コマツ電子金属株式会社
发明人： NASU YUICHI , NARAHARA KAZUHIRO
IPC分类号： H01L21/324 , H01L21/20 , H01L21/316
CPC分类号： H01L21/324 , C30B25/02 , C30B29/06 , H01L21/02052 , H01L21/02381 , H01L21/02532 , H01L21/02658
摘要： PROBLEM TO BE SOLVED: To provide a method of manufacturing epitaxial silicon wafers whereby the number of stacking faults of an epitaxial layer can sufficiently be decreased.
SOLUTION: The surface of a substrate 11 is irrigated by hydrofluoric acid solution to remove an oxide film 13 on the surface of the substrate 11, and also to remove an oxide film 112 in a COP 111 exposed on the surface of the substrate 11. Thereafter, the substrate 11 is washed by ozone water to form an oxide film 13 on the surface of the substrate 11. Then heat treatment is applied to the substrate 11 to remove the oxide film 13 on the surface of the substrate 11. Thus, the COP 111 on the surface of the substrate 11 is smoothed, resulting in that the COP 111 on the surface of the substrate 11 is lost. Thereafter, the epitaxial layer 12 is formed on the surface of the substrate 11.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种制造外延硅晶片的方法，由此可以充分降低外延层的堆垛层错数。解决方案：通过氢氟酸溶液冲洗基板11的表面以除去基板11表面上的氧化膜13，并且还去除暴露在基板表面上的COP 111中的氧化物膜112 然后，用臭氧水洗涤基板11，在基板11的表面形成氧化膜13.然后，对基板11进行热处理，除去基板11的表面上的氧化膜13。在基板11的表面上的COP111被平滑化，导致基板11表面的COP111损失。此后，外延层12形成在基板11的表面上。版权所有（C）2006，JPO＆NCIPI

4. 发明专利

JP2006169010A Apparatus and method for manufacturing semiconductor single crystal 有权
标题翻译：用于制造半导体单晶的装置和方法
公开(公告)号：JP2006169010A
公开(公告)日：2006-06-29
申请号：JP2004360094
申请日：2004-12-13
申请人： Komatsu Electronic Metals Co Ltd , コマツ電子金属株式会社
发明人： NODA AKIKO , IIDA AKIHIRO
IPC分类号： C30B15/00 , C30B29/06
CPC分类号： C30B15/14 , C30B15/00 , C30B15/10 , C30B29/06 , Y10T117/10 , Y10T117/1052 , Y10T117/106 , Y10T117/108
摘要： PROBLEM TO BE SOLVED: To exhaust evaporated materials and reaction products produced in a furnace without making them in contact with a graphite crucible and a heater, to prevent an exhaust pipe from being clogged by suppressing deposition or condensation of the evaporated materials and the reaction products by keeping the exhaust pipe itself at a high temperature, to improve the durability of the exhaust pipe by suppressing the conversion of the exhaust pipe itself into SiC, to pull a hot single crystal in a high quality state by suppressing change of the coefficient of thermal expansion, and to reduce manufacturing cost by constituting the exhaust pipe with a small amount of materials. SOLUTION: A heat shield 12 constituted of a heat insulating material is provided at the outer side of a heater 6, and a plurality of exhaust pipes 20 are provided between the heater 6 and the heat shield 12. The plurality of exhaust pipes 20 are communicated to a plurality of exhaust ports 8b (22b) installed at the bottom part of a chamber 1. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：为了排除在炉中产生的蒸发材料和反应产物而不使其与石墨坩埚和加热器接触，以防止排气管被阻止蒸发的材料的沉积或冷凝而堵塞，通过将排气管本身保持在高温下的反应产物，通过抑制排气管本身转化为SiC来提高排气管的耐久性，通过抑制排气管本身的变化来拉动高质量状态的热单晶热膨胀系数，并且通过用少量的材料构成排气管来降低制造成本。解决方案：在加热器6的外侧设置由绝热材料构成的隔热罩12，并且在加热器6和隔热罩12之间设置多个排气管20.多个排气管 20被连通到安装在室1的底部的多个排气口8b（22b）。版权所有（C）2006，JPO＆NCIPI

5. 发明专利

JP2006066447A Work chuck cleaning apparatus, work chuck cleaning method, and polishing equipment equipped with the work chuck cleaning apparatus 审中-公开
标题翻译：工作清洁装置，工作清洁方法和抛光设备配备工作清洁装置
公开(公告)号：JP2006066447A
公开(公告)日：2006-03-09
申请号：JP2004243969
申请日：2004-08-24
申请人： Komatsu Electronic Metals Co Ltd , Komatsu Ltd , コマツ電子金属株式会社 , 株式会社小松製作所
发明人： YAMASHITA JUNICHI , TAKEDA HIDETOSHI
IPC分类号： H01L21/304 , B08B1/04 , B08B3/02 , B24B37/04 , B24B55/06 , H01L21/677
摘要： PROBLEM TO BE SOLVED: To provide work chuck cleaning equipment which can reduce the remaining rate of foreign matters in a work chuck. SOLUTION: The work chuck cleaning equipment comprises the work chuck 12 that contains many pins 14, formed in a downwardly protruding state and is rotated with a semiconductor wafer sucked by the ends of these pins; a surface brush 41 that has a plurality of hair fluxes formed in a protruding state, and is rotated with the ends of the hair fluxes in contact with the work chuck 12; and a displacement driving mechanism for displacing the work chuck 12 and/or the surface brush 41 in the radial direction of the work chuck 12. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供可以减少工件卡盘中的异物剩余率的工作卡盘清洁设备。解决方案：工件卡盘清洁设备包括工件卡盘12，工件卡盘12包含许多销14，其形成为向下突出的状态，并且与由这些销的端部吸附的半导体晶片一起旋转; 表面刷41具有多个以突出状态形成的毛发束，并且随着毛发束的端部与工件卡盘12接触而旋转; 以及用于使工件卡盘12和/或表面刷41沿着工件卡盘12的径向移动的位移驱动机构。版权所有（C）2006，JPO＆NCIPI

6. 发明专利

JP2006058081A Treatment device 有权
标题翻译：治疗装置
公开(公告)号：JP2006058081A
公开(公告)日：2006-03-02
申请号：JP2004238679
申请日：2004-08-18
申请人： Komatsu Electronic Metals Co Ltd , コマツ電子金属株式会社
发明人： EIFUKU KENJI , SHIBATA HARUMI , NAGAI SEIJI
IPC分类号： G01N31/00 , G01N1/28
摘要： PROBLEM TO BE SOLVED: To provide a treatment device capable of decomposing efficiently a silicon substrate. SOLUTION: This treatment device 1 is equipped with a container 11 installed in a draft and filled inside with the silicon substrate 21 and decomposition liquid 22, a heating part 12, and a support plate 13. The silicon substrate 21 is installed on the support plate 13 and arranged in the container 11. Since the support plate 13 is arranged slantingly at a prescribed angle in a container body 111 of the container 11 and is not arranged in parallel with the liquid surface of the decomposition liquid 22, evaporation of the decomposition liquid 22 is not prevented. Thus, decomposition of the silicon substrate 21 can be performed efficiently. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供能够有效地分解硅衬底的处理装置。解决方案：该处理装置1装备有安装在通风槽中的容器11，其中填充有硅基板21和分解液22，加热部分12和支撑板13。硅基板21安装在支撑板13并且布置在容器11中。由于支撑板13在容器11的容器主体111中以预定的角度倾斜地布置，并且不与分解液22的液面平行布置，所以蒸发不防止分解液22。因此，能够有效地进行硅基板21的分解。版权所有（C）2006，JPO＆NCIPI

7. 发明专利

JP2006032641A Etching apparatus for semiconductor wafer 有权
标题翻译：用于SEMICONDUCTOR WAFER的蚀刻设备
公开(公告)号：JP2006032641A
公开(公告)日：2006-02-02
申请号：JP2004209083
申请日：2004-07-15
申请人： Komatsu Electronic Metals Co Ltd , コマツ電子金属株式会社
发明人： MIYAZAKI MASAMITSU , HIRAYAMA KAZUYA , FUKUNAGA TOSHIYA
IPC分类号： H01L21/306
摘要： PROBLEM TO BE SOLVED: To provide an etching apparatus for a semiconductor wafer which can improve the planarity of a semiconductor wafer including the periphery, by controlling a rotating flow generated by the semiconductor wafer, while at the same time suppressing a three-dimensional turbulent flow near the periphery of the semiconductor wafer at etching of the semiconductor wafer.
SOLUTION: The etching apparatus 1 comprises an etching bath 2 and a wafer magazine 10, which is taken in and out of the etching bath 2 and stores a plurality of semiconductor wafers W. The etching apparatus 1 etches the semiconductor wafers W stored inside the wafer magazine 10 by making them rotate. Inside the wafer magazine 10, a flow-straightening member 5 is arranged before and after, or immediately below each semiconductor wafer W. Due to this structure, the three-dimensional turbulent flow occurring can be suppressed between the semiconductor wafers W being rotated inside the wafer magazine 10, leading to improvement in flatness in the periphery of each semiconductor wafer W.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：解决问题的方案为了提供一种用于半导体晶片的蚀刻装置，其可以通过控制由半导体晶片产生的旋转流来提高包括其周边的半导体晶片的平面性，在半导体晶片的蚀刻时靠近半导体晶片的周边的尺寸湍流。解决方案：蚀刻装置1包括蚀刻槽2和晶片盒10，其被取入和取出蚀刻槽2并存储多个半导体晶片W.蚀刻装置1蚀刻存储的半导体晶片W 通过使它们旋转，在晶片仓10内。在晶片仓10内部，在每个半导体晶片W之前和之后，或每个半导体晶片W的正下方布置有流动矫直构件5.由于这种结构，在半导体晶片W的内部旋转的半导体晶片W之间可以抑制发生的三维湍流晶片盒10，导致每个半导体晶片W的周边的平坦度得到改善。版权所有（C）2006，JPO＆NCIPI

8. 发明专利

JP2006013234A Method and device for recovering liquid chemical from semiconductor wafer 有权
标题翻译：用于从半导体晶体管中回收液体化学的方法和装置
公开(公告)号：JP2006013234A
公开(公告)日：2006-01-12
申请号：JP2004190031
申请日：2004-06-28
申请人： Komatsu Electronic Metals Co Ltd , コマツ電子金属株式会社
发明人： WAKUTA MARIKO , SATO ICHIRO
IPC分类号： H01L21/66 , G01N1/28
CPC分类号： G01N1/02 , G01N1/32 , G01N2001/028 , H01L21/6715
摘要： PROBLEM TO BE SOLVED: To accurately analyze and evaluate the contaminated degree of the surface flat section of a semiconductor wafer by recovering liquid chemical without omission from all extent of the section, by making the contaminated degree of a chamfered section accurately analyzable and evaluable by preventing the mixture of impurities contained in sections other than the chamfered section into the liquid chemical.
SOLUTION: Of the surface flat section 11 of the semiconductor wafer 10, the liquid chemical 40 is positioned in the radial direction (the distance of the center of the liquid chemical 40 from the center of the wafer 10), so that the chemical 40 may come into contact with the boundary area with the chamfered section 15 and the chemical 40 containing impurities is recovered by scanning the chemical 40 in the peripheral direction ω. Then the liquid chemical 40 is positioned in the radial direction so that the chemical 40 may come into contact with both the chamfered section 15 and boundary area 11a of the semiconductor wafer 10 and the chemical 40 containing impurities is recovered by scanning the chemical 40 in the peripheral direction ω. A droplet holding jig 30 is relatively rotated in the peripheral direction until the jig 30 reaches a ending point from a desired starting point on, for example, the periphery of the wafer 10.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：通过将切片的污染程度准确地分析，可以通过从部分的所有程度回收液体化学品而不间断地分析和评估半导体晶片的表面平坦部分的污染程度，可以通过防止除了倒角部分以外的部分中含有的杂质的混合物进入液体化学品中来进行评估。解决方案：在半导体晶片10的表面平坦部分11中，液体化学物质40位于径向（液体化学品40的中心距离晶片10的中心的距离），使得化学品40可能与倒角部分15的边界区域接触，并且通过沿周向方向ω扫描化学品40来回收含有杂质的化学物质40。然后液体化学品40沿径向定位，使得化学物质40可以与半导体晶片10的倒角部分15和边界区域11a接触，通过扫描化学物质40来回收含有杂质的化学物质40。周边方向ω。液滴保持夹具30在圆周方向上相对旋转，直到夹具30从例如晶片10的周边上的期望的起始点到达终点。（C）2006，JPO＆NCIPI

9. 发明专利

JP2005050889A Method and apparatus for etching laser marked disk-like member 有权
标题翻译：用于蚀刻激光标记盘式成员的方法和装置
公开(公告)号：JP2005050889A
公开(公告)日：2005-02-24
申请号：JP2003203445
申请日：2003-07-30
申请人： Komatsu Electronic Metals Co Ltd , コマツ電子金属株式会社
发明人： HIRAYAMA KAZUYA , TATSUMI TATSUYA , FUKUNAGA TOSHIYA , FUTAMURA KIMIYASU , MIYAZAKI MASAMITSU
IPC分类号： H01L21/306 , H01L21/02
CPC分类号： H01L2223/54406 , H01L2223/54433 , H01L2223/54493
摘要： PROBLEM TO BE SOLVED: To provide a method and an apparatus for etching which can solve the problems such as sags/recesses, etc. generated around the dots of a laser marked wafer in an etching step of manufacturing the wafer. SOLUTION: The method for etching includes a step of etching the laser marked wafer 30 by rotating in an etching tank 12 in which an etchant is fully filled. The method further includes a step of etching the wafer 30 while rocking the wafer 30 to the liquid surface of the etchant so that a part or all of the wafer 30 moves out of the liquid surface of the etchant. Moreover, the apparatus for etching supports and rotates the wafer 30 in the etchant and etches the wafer 30 while rocking the wafer 30 to the liquid surface of the etchant so that the part or all of the wafer 30 moves out of the liquid surface of the etchant. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供一种用于蚀刻的方法和设备，其可以解决在制造晶片的蚀刻步骤中在激光标记晶片的点周围产生的诸如凹陷/凹陷等问题。解决方案：蚀刻方法包括通过在其中蚀刻剂完全填充的蚀刻槽12中旋转蚀刻激光标记晶片30的步骤。该方法还包括在将晶片30摇动到蚀刻剂的液体表面的同时蚀刻晶片30的步骤，使得晶片30的一部分或全部移出蚀刻剂的液体表面。此外，用于蚀刻的装置支撑并旋转晶片30在蚀刻剂中并蚀刻晶片30，同时将晶片30摇动到蚀刻剂的液体表面，使得晶片30的一部分或全部移出液晶表面腐蚀剂。版权所有（C）2005，JPO＆NCIPI

10. 发明专利

JP2004149374A Method for manufacturing silicon wafer 有权
公开(公告)号：JP2004149374A
公开(公告)日：2004-05-27
申请号：JP2002317955
申请日：2002-10-31
申请人： Komatsu Electronic Metals Co Ltd , コマツ電子金属株式会社
发明人： MAEDA SUSUMU , INAGAKI HIROSHI , KAWASHIMA SHIGEKI , KUROSAKA SHOEI , NAKAMURA KOZO
IPC分类号： C30B29/06 , C30B15/00 , C30B15/04 , C30B15/22 , H01L21/322 , H01L21/324
CPC分类号： C30B29/06 , C30B15/203
摘要： PROBLEM TO BE SOLVED: To provide a method for manufacturing a high-quality epitaxial silicon wafer having no defect in the epitaxial layer with high yield by clarifying the lower limit LN1 of a non-epitaxial defect region α2 and a method for manufacturing with high yield a high-quality epitaxial silicon wafer having no defect in the epitaxial layer in the region of manufacture conditions including an epitaxial defect region β1.
SOLUTION: A silicon crystal is manufactured by controlling the boron concentration in the silicon crystal and the growing conditions V/G to be in a non-epitaxial defect region α2 where the line indicating gradual decrease in the growing rate V with an increase in the boron concentration at and over ≥1×10
18 atoms/cm
3 in the silicon crystal is defined as the lower limit line LN1. Further, a silicon wafer is manufactured by controlling the boron concentration in the silicon crystal and the growing conditions V/G to include at least an epitaxial defect region β1 and by controlling the condition of heat treatment of the silicon crystal and the oxygen concentration in the silicon crystal so as not to develop the nucleus of OSF (oxidation induced stacking fault) into OSF.
COPYRIGHT: (C)2004,JPO

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式