专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明专利

JP2003313089A Method for manufacturing single crystal silicon and single crystal silicon wafer, seed crystal for manufacturing single crystal silicon, single crystal silicon ingot, and single crystal silicon wafer 有权
标题翻译：制造单晶硅和单晶硅砂的方法，用于制造单晶硅，单晶硅和单晶硅波的晶体
公开(公告)号：JP2003313089A
公开(公告)日：2003-11-06
申请号：JP2002118281
申请日：2002-04-19
申请人： Komatsu Electronic Metals Co Ltd , コマツ電子金属株式会社
发明人： IIDA AKIHIRO , SHIRAISHI YUTAKA , SUEWAKA RYOTA , TOMIOKA JUNSUKE
IPC分类号： C30B15/00 , C30B15/36 , C30B29/06
CPC分类号： C30B29/06 , C30B15/36 , Y10S117/902
摘要： PROBLEM TO BE SOLVED: To pull a heavy single crystal silicon ingot having a large diameter by removing slip dislocations by the large diameter when the single crystal silicon is grown by pulling a seed crystal in a Czochralski process. SOLUTION: The single crystal silicon is manufactured by using a seed crystal 1 in which the crystal orientation 10 is inclined by a prescribed angle θ with respect to the axis direction 9 so that the ridge line direction 8 of the ä111} crystal face is inclined with respect to the axis direction 9. COPYRIGHT: (C)2004,JPO
摘要翻译：待解决的问题：通过在Czochralski工艺中拉晶晶来生长单晶硅时，通过除去大直径的滑移位错来拉动具有大直径的重单晶硅锭。解决方案：通过使用其中<110>晶体取向10相对于轴线方向9倾斜规定角度θ的晶种1制造单晶硅，使得ä111的脊线方向8 }晶面相对于轴线方向9倾斜。版权所有（C）2004，JPO

2. 发明专利

JP2004035357A Raw material feeding device in single crystal pulling apparatus, raw material for manufacturing single crystal semiconductor, and raw material feeding vessel 有权
公开(公告)号：JP2004035357A
公开(公告)日：2004-02-05
申请号：JP2002197477
申请日：2002-07-05
申请人： Komatsu Electronic Metals Co Ltd , コマツ電子金属株式会社
发明人： IIDA AKIHIRO , SHIRAISHI YUTAKA , TOMIOKA JUNSUKE
IPC分类号： C30B15/02 , C30B29/06
摘要： PROBLEM TO BE SOLVED: To realize the reduction of the cost of a raw material, the improvement of the quality of a single crystal, the reduction of the damage to a crucible, the simplification of the structure of an opening/closing mechanism, and the reduction of the time for a raw material feeding process.
SOLUTION: A raw material 14 is housed in a raw material feeding vessel 10, of which the bottom lid 11 is composed of a member made of the raw material 14 and shaped into a plate. The raw material feeding vessel 10 is lowered to a position where the bottom lid 11 is immersed in a melt 5 in a crucible 3, with the bottom lid 11 locked by a locking part 12b and suspended. Since the locking part 12b is made of the raw material 14, it is melted when immersed in the melt 5. On melting the locking part 12b, the bottom lid 11 falls down into the melt 5. Since the bottom of the raw material feeding vessel 10 is opened by falling of the bottom lid 11, the raw material 14 falls down, following the fall of the lid, into the melt 5 in a way that it is placed on the lid.
COPYRIGHT: (C)2004,JPO

3. 发明专利

JP2006169010A Apparatus and method for manufacturing semiconductor single crystal 有权
标题翻译：用于制造半导体单晶的装置和方法
公开(公告)号：JP2006169010A
公开(公告)日：2006-06-29
申请号：JP2004360094
申请日：2004-12-13
申请人： Komatsu Electronic Metals Co Ltd , コマツ電子金属株式会社
发明人： NODA AKIKO , IIDA AKIHIRO
IPC分类号： C30B15/00 , C30B29/06
CPC分类号： C30B15/14 , C30B15/00 , C30B15/10 , C30B29/06 , Y10T117/10 , Y10T117/1052 , Y10T117/106 , Y10T117/108
摘要： PROBLEM TO BE SOLVED: To exhaust evaporated materials and reaction products produced in a furnace without making them in contact with a graphite crucible and a heater, to prevent an exhaust pipe from being clogged by suppressing deposition or condensation of the evaporated materials and the reaction products by keeping the exhaust pipe itself at a high temperature, to improve the durability of the exhaust pipe by suppressing the conversion of the exhaust pipe itself into SiC, to pull a hot single crystal in a high quality state by suppressing change of the coefficient of thermal expansion, and to reduce manufacturing cost by constituting the exhaust pipe with a small amount of materials. SOLUTION: A heat shield 12 constituted of a heat insulating material is provided at the outer side of a heater 6, and a plurality of exhaust pipes 20 are provided between the heater 6 and the heat shield 12. The plurality of exhaust pipes 20 are communicated to a plurality of exhaust ports 8b (22b) installed at the bottom part of a chamber 1. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：为了排除在炉中产生的蒸发材料和反应产物而不使其与石墨坩埚和加热器接触，以防止排气管被阻止蒸发的材料的沉积或冷凝而堵塞，通过将排气管本身保持在高温下的反应产物，通过抑制排气管本身转化为SiC来提高排气管的耐久性，通过抑制排气管本身的变化来拉动高质量状态的热单晶热膨胀系数，并且通过用少量的材料构成排气管来降低制造成本。解决方案：在加热器6的外侧设置由绝热材料构成的隔热罩12，并且在加热器6和隔热罩12之间设置多个排气管20.多个排气管 20被连通到安装在室1的底部的多个排气口8b（22b）。版权所有（C）2006，JPO＆NCIPI

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式