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1. 发明专利

JP2003273063A Method and apparatus for removing oxide film at edge of semiconductor wafer 有权
标题翻译：用于在半导体滤波器边缘去除氧化膜的方法和装置
公开(公告)号：JP2003273063A
公开(公告)日：2003-09-26
申请号：JP2002068489
申请日：2002-03-13
申请人： Komatsu Electronic Metals Co Ltd , コマツ電子金属株式会社
发明人： NODA DAISUKE , FUKUNAGA TOSHIYA , MASUTANI FUMIO
IPC分类号： H01L21/306
摘要： PROBLEM TO BE SOLVED: To perform edge relief process at high work efficiency and low cost, to control the relief width of an oxide film at high precision, and to make the relief width constant across the circumferential direction of a semiconductor wafer. SOLUTION: An oxide film removing width δ of an edge part 24 of a semiconductor wafer 20 is controlled by controlling at least one of an etchant discharge means 30, a rotating means 37, and gas discharge means 34 and 35. COPYRIGHT: (C)2003,JPO
摘要翻译：要解决的问题为了以高的工作效率和低成本进行边缘消除处理，能够高精度地控制氧化膜的凸版宽度，并使凸版宽度在半导体晶片的圆周方向上保持不变。解决方案：通过控制蚀刻剂排出装置30，旋转装置37和气体排出装置34和35中的至少一个来控制半导体晶片20的边缘部分24的氧化膜去除宽度δ。
版权所有（C）2003，JPO

2. 发明专利

JP2006147731A Polishing cloth, wafer polishing device, and method of manufacturing wafer 有权
标题翻译：抛光布，抛光抛光装置及其制造方法
公开(公告)号：JP2006147731A
公开(公告)日：2006-06-08
申请号：JP2004333791
申请日：2004-11-17
申请人： Komatsu Electronic Metals Co Ltd , コマツ電子金属株式会社
发明人： KAWAHITO SHINICHI , MARUOKA DAISUKE , TAJIRI TOMOAKI , FUKUNAGA TOSHIYA
IPC分类号： H01L21/304 , B24B37/20 , B24B53/017 , B24D3/00 , B24D3/34
摘要： PROBLEM TO BE SOLVED: To provide a polishing cloth that can supply a highly flat wafer by suppressing the occurrence of flaws and polishing marks, and to provide a wafer polishing device. SOLUTION: The height of the surface of the outer periphery of the polishing cloth 12 used for polishing a wafer W is lowered by annularly grinding the outer periphery with a grinding plate 19 on which abrasive diamond grains are electrodeposited. Consequently, the highly flat wafer W which is reduced in plane dripping in the outer periphery can be manufactured, because the polishing resistance is reduced in the outer periphery of the polishing cloth 12. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种通过抑制缺陷和抛光痕迹的发生来提供高度平坦的晶片的抛光布，并提供晶片抛光装置。解决方案：用于研磨晶片W的抛光布12的外周的表面的高度通过用钻磨磨粒电沉积的研磨板19环形研磨外周而降低。因此，由于研磨布12的外周的抛光阻力降低，所以可以制造在外周平面滴落的高度平坦的薄片W.因此，（C）2006，JPO＆NCIPI

3. 发明专利

JP2005050943A Method and device for etching disk-like material 有权
标题翻译：用于蚀刻盘状材料的方法和装置
公开(公告)号：JP2005050943A
公开(公告)日：2005-02-24
申请号：JP2003204248
申请日：2003-07-31
申请人： Komatsu Electronic Metals Co Ltd , コマツ電子金属株式会社
发明人： MIYAZAKI MASAMITSU , HIRAYAMA KAZUYA , FUKUNAGA TOSHIYA , FUTAMURA KIMIYASU
IPC分类号： H01L21/306 , H01L21/00 , H01L21/673
CPC分类号： H01L21/67313 , H01L21/67086 , Y10S134/902
摘要： PROBLEM TO BE SOLVED: To provide an etching method/device for suppressing the disturbance that etching liquid causes and improving the flatness quality and the nano-topology quality after etching.
SOLUTION: In the etching method, a wafer 30 is etched while it is rotated in an etching tank 12 filled with etching liquid. A cell plate 26 which does not rotate is arranged between the rotating wafer 30 and the wafer 30. In the etching device where rods 16 support and rotate a plurality of the wafers 30, the cell plate 26 is arranged between the wafer 30 and the wafer 30. The size of a surface area of the cell plate 26 is made almost the same as the wafer 30.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供一种用于抑制蚀刻液引起的干扰的蚀刻方法/装置，并且提高蚀刻后的平坦度质量和纳米拓扑质量。解决方案：在蚀刻方法中，在填充有蚀刻液的蚀刻槽12中旋转晶片30时，蚀刻晶片30。不旋转的单电池板26配置在旋转晶片30和晶片30之间。在其中棒16支撑并旋转多个晶片30的蚀刻装置中，单元板26设置在晶片30和晶片之间细胞板26的表面积的大小与晶片30几乎相同。版权所有：（C）2005，JPO＆NCIPI

4. 发明专利

JP2006032640A Etching apparatus for semiconductor wafer 有权
标题翻译：用于SEMICONDUCTOR WAFER的蚀刻设备
公开(公告)号：JP2006032640A
公开(公告)日：2006-02-02
申请号：JP2004209075
申请日：2004-07-15
申请人： Komatsu Electronic Metals Co Ltd , コマツ電子金属株式会社
发明人： MIYAZAKI MASAMITSU , HIRAYAMA KAZUYA , FUKUNAGA TOSHIYA
IPC分类号： H01L21/306
摘要： PROBLEM TO BE SOLVED: To provide an etching apparatus for a semiconductor wafer which can process wafers flat, and in addition can uniform the planarity of wafers in the same batch, and can carry out an etching process that can improve the so-called "nanotopography".
SOLUTION: The etching apparatus 1 comprises an etching bath 2 and a wafer magazine 10 which is taken in and out of the etching bath 2 and stores a plurality of semiconductor wafers W within it. The etching apparatus etches the semiconductor wafers W by rotating them. To this end, the etching apparatus contains a normal rotation section X for normally rotating every other semiconductor wafer W among the plurality of them, to be rotated inside the wafer magazine 10 about its central axis; and a reverse rotation section Y for reversely rotating the semiconductor wafers W that is not rotated normally about their central axis. The rotary motion of the normal or reverse rotation X or Y is carried out by direct transmission of the rotary motion of the other section.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：为了提供可以处理晶片平坦化的半导体晶片的蚀刻装置，并且还可以使同一批次中的晶片的平面度均匀，并且可以执行可以改善所谓的“ 称为“纳米形貌”。解决方案：蚀刻装置1包括蚀刻槽2和从蚀刻槽2中取出并在其内存储多个半导体晶片W的晶片盒10。蚀刻装置通过旋转半导体晶片W来蚀刻。为此，蚀刻装置包括用于使多个它们中的每隔一个半导体晶片W正常旋转的正转旋转部X，以使晶片仓10的中心轴旋转; 以及反转旋转部Y，用于使不能绕其中心轴正常旋转的半导体晶片W反转。正转或反转X或Y的旋转运动通过直接传递另一部分的旋转运动来进行。版权所有（C）2006，JPO＆NCIPI

5. 发明专利

JP2005327856A Etching apparatus for semiconductor wafer 审中-公开
标题翻译：用于SEMICONDUCTOR WAFER的蚀刻设备
公开(公告)号：JP2005327856A
公开(公告)日：2005-11-24
申请号：JP2004143765
申请日：2004-05-13
申请人： Komatsu Electronic Metals Co Ltd , コマツ電子金属株式会社
发明人： MIYAZAKI MASAMITSU , HIRAYAMA KAZUYA , FUKUNAGA TOSHIYA
IPC分类号： H01L21/306
摘要： PROBLEM TO BE SOLVED: To uniformly and excellently perform etching treatment while preventing a silicon wafer from being damaged by eliminating a rotation defect by eliminating the drop of the silicon wafer from a groove of a holding bar, and to improve flatness in the outer periphery of the silicon wafer by suppressing, as small as possible, the area of the outer periphery not in contact with an etching liquid.
SOLUTION: Lower holding bars 13, 14, 15, 16 are disposed to hold the outer peripheral surface 31 of a wafer that is present lower than a wafer center 30c except for an orientation flat surface 32, at all the time using three or more holding bars (14, 15, 16, for example) at a rotating position where the orientation flat surface 32 is present lower than the wafer center 30c.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：为了均匀且优异地进行蚀刻处理，同时通过消除硅晶片从保持棒的凹槽的下降而消除旋转缺陷来防止硅晶片的损坏，并且为了提高通过尽可能小地抑制不与蚀刻液体接触的外周的面积来制造硅晶片的外周。
解决方案：下部保持杆13,14,15,16设置成保持比除了定向平坦表面32之外的晶片中心30c以外的晶片的外周表面31，使用三个或更多的保持杆（例如，14,15,16）在定向平坦表面32存在的旋转位置处低于晶片中心30c。版权所有（C）2006，JPO＆NCIPI

6. 发明专利

JP2006032641A Etching apparatus for semiconductor wafer 有权
标题翻译：用于SEMICONDUCTOR WAFER的蚀刻设备
公开(公告)号：JP2006032641A
公开(公告)日：2006-02-02
申请号：JP2004209083
申请日：2004-07-15
申请人： Komatsu Electronic Metals Co Ltd , コマツ電子金属株式会社
发明人： MIYAZAKI MASAMITSU , HIRAYAMA KAZUYA , FUKUNAGA TOSHIYA
IPC分类号： H01L21/306
摘要： PROBLEM TO BE SOLVED: To provide an etching apparatus for a semiconductor wafer which can improve the planarity of a semiconductor wafer including the periphery, by controlling a rotating flow generated by the semiconductor wafer, while at the same time suppressing a three-dimensional turbulent flow near the periphery of the semiconductor wafer at etching of the semiconductor wafer.
SOLUTION: The etching apparatus 1 comprises an etching bath 2 and a wafer magazine 10, which is taken in and out of the etching bath 2 and stores a plurality of semiconductor wafers W. The etching apparatus 1 etches the semiconductor wafers W stored inside the wafer magazine 10 by making them rotate. Inside the wafer magazine 10, a flow-straightening member 5 is arranged before and after, or immediately below each semiconductor wafer W. Due to this structure, the three-dimensional turbulent flow occurring can be suppressed between the semiconductor wafers W being rotated inside the wafer magazine 10, leading to improvement in flatness in the periphery of each semiconductor wafer W.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：解决问题的方案为了提供一种用于半导体晶片的蚀刻装置，其可以通过控制由半导体晶片产生的旋转流来提高包括其周边的半导体晶片的平面性，在半导体晶片的蚀刻时靠近半导体晶片的周边的尺寸湍流。解决方案：蚀刻装置1包括蚀刻槽2和晶片盒10，其被取入和取出蚀刻槽2并存储多个半导体晶片W.蚀刻装置1蚀刻存储的半导体晶片W 通过使它们旋转，在晶片仓10内。在晶片仓10内部，在每个半导体晶片W之前和之后，或每个半导体晶片W的正下方布置有流动矫直构件5.由于这种结构，在半导体晶片W的内部旋转的半导体晶片W之间可以抑制发生的三维湍流晶片盒10，导致每个半导体晶片W的周边的平坦度得到改善。版权所有（C）2006，JPO＆NCIPI

7. 发明专利

JP2005050889A Method and apparatus for etching laser marked disk-like member 有权
标题翻译：用于蚀刻激光标记盘式成员的方法和装置
公开(公告)号：JP2005050889A
公开(公告)日：2005-02-24
申请号：JP2003203445
申请日：2003-07-30
申请人： Komatsu Electronic Metals Co Ltd , コマツ電子金属株式会社
发明人： HIRAYAMA KAZUYA , TATSUMI TATSUYA , FUKUNAGA TOSHIYA , FUTAMURA KIMIYASU , MIYAZAKI MASAMITSU
IPC分类号： H01L21/306 , H01L21/02
CPC分类号： H01L2223/54406 , H01L2223/54433 , H01L2223/54493
摘要： PROBLEM TO BE SOLVED: To provide a method and an apparatus for etching which can solve the problems such as sags/recesses, etc. generated around the dots of a laser marked wafer in an etching step of manufacturing the wafer. SOLUTION: The method for etching includes a step of etching the laser marked wafer 30 by rotating in an etching tank 12 in which an etchant is fully filled. The method further includes a step of etching the wafer 30 while rocking the wafer 30 to the liquid surface of the etchant so that a part or all of the wafer 30 moves out of the liquid surface of the etchant. Moreover, the apparatus for etching supports and rotates the wafer 30 in the etchant and etches the wafer 30 while rocking the wafer 30 to the liquid surface of the etchant so that the part or all of the wafer 30 moves out of the liquid surface of the etchant. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供一种用于蚀刻的方法和设备，其可以解决在制造晶片的蚀刻步骤中在激光标记晶片的点周围产生的诸如凹陷/凹陷等问题。解决方案：蚀刻方法包括通过在其中蚀刻剂完全填充的蚀刻槽12中旋转蚀刻激光标记晶片30的步骤。该方法还包括在将晶片30摇动到蚀刻剂的液体表面的同时蚀刻晶片30的步骤，使得晶片30的一部分或全部移出蚀刻剂的液体表面。此外，用于蚀刻的装置支撑并旋转晶片30在蚀刻剂中并蚀刻晶片30，同时将晶片30摇动到蚀刻剂的液体表面，使得晶片30的一部分或全部移出液晶表面腐蚀剂。版权所有（C）2005，JPO＆NCIPI

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