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1. 发明专利

JP2001244273A DIODE AND ITS MANUFACTURING METHOD 失效
公开(公告)号：JP2001244273A
公开(公告)日：2001-09-07
申请号：JP2000054140
申请日：2000-02-29
申请人： HITACHI LTD , HITACHI HARAMACHI SEMI CONDUCT
发明人： MURAKAMI SUSUMU , MIURA MASATAMI , TAKAHASHI MASAO , KOBAYASHI SATSUKI
IPC分类号： H01L23/29 , H01L21/329 , H01L23/31 , H01L29/861
摘要： PROBLEM TO BE SOLVED: To obtain a diode whose electric characteristic is not degraded when a thermal shock is applied repeatedly many times during its use and to obtain its manufacturing method. SOLUTION: In a bevel-shaped diode, one main face is a (111) plane, and a p+ junction, a p-junction and an n+ junction are exposed on its side face. It is machined in such a way that its diameter as viewed from the above an intermediate p-layer 1 is larger than the diameter of a p+ layer 2 and an n+ layer 3. A bevel angle is formed at 75 deg. or more by an oxide etching operation and an alkali etching operation. A flat end face is formed in such a way that irregularities are not generated on the end face of the p-junction and the n+ junction. As a result, it is possible to provide a diode whose cut off characteristic in the reverse direction is superior.

2. 发明专利

JP2001127214A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JP2001127214A
公开(公告)日：2001-05-11
申请号：JP30796299
申请日：1999-10-29
申请人： HITACHI LTD , HITACHI HARAMACHI SEMI CONDUCT
发明人： NAKAJIMA TSUTOMU , MIURA MASATAMI , SHIKURA TOSHIO
IPC分类号： H01L21/52 , H01L23/28 , H01L23/29 , H01L23/31 , H01L23/48 , H01L29/861
摘要： PROBLEM TO BE SOLVED: To prevent a defect in the reverse directional characteristics of a semiconductor deivce from being generated in the device which is manufactured by using a junction coating resin. SOLUTION: A semiconductor device has a structure that the diameter of a lead electrode body is set within a size of -0.1 to +0.4 to the diameter of a semiconductor chip and a film thickness favorable to a junction coating resin is ensured. By ensuring the film thickness favorable to the resin, a separation of the resin from the device and a breakage of the resin are not generated and a defect in the reverse directional characteristics of the device is prevented from being generated.

3. 发明专利

JPS61237456A INSULATED MOLDING TYPE SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS61237456A
公开(公告)日：1986-10-22
申请号：JP7754085
申请日：1985-04-13
申请人： HITACHI LTD , HITACHI HARAMACHI SEMI CONDUCT
发明人： YAMAZAKI TATSUO , MIURA MASATAMI , FUJII MASAMI , IIMURA KENJI , NAKAJIMA YOICHI
IPC分类号： H01L23/29 , H01L23/14 , H01L23/28 , H01L23/373
摘要： PURPOSE:To reduce thermal resistance and to minimize stress applied to a semiconductor chip on the fitting of an external fin by specifying each linear expansion coefficient and modulus of longitudinal elasticity of a metallic substrate, a sub-metallic substrate and an insulating plate in a device in which the semiconductor chip is mounted to the metallic substrate through the sub-metallic substrate and the insulating plate. CONSTITUTION:A semiconductor chip 10 is bonded directly with a metallic conductor pattern 8a on an insulating plate 7 only through a solder material 9a. Consequently, the increase of thermal resistance is avoided, and thermal resistance is reduced. The quality of materials of a metallic substrate 2, a sub-metallic substrate 4 and the insulating plate 7 are selected so that alpha3

4. 发明专利

JPH09139462A SEMICONDUCTOR DEVICE AND FULL-WAVE RECTIFIER USING THE DEVICE 失效
公开(公告)号：JPH09139462A
公开(公告)日：1997-05-27
申请号：JP29402895
申请日：1995-11-13
申请人： HITACHI LTD , HITACHI HARAMACHI SEMI CONDUCT
发明人： SHIKURA TOSHIO , MIURA MASATAMI , NARITA KAZUTOYO
IPC分类号： H01L25/07
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device whose lifespan because of thermal fatigue is increased. SOLUTION: A semiconductor device is comprised of a metallic case 1, a semiconductor chip 2 bonded to the bottom of the metallic case 1 through a bonding layer 3, a header 4a which is molded in one piece with a lead 4 and is bonded to the semiconductor chip 2 through the bonding layer 5, and a protective layer 7 covering the exposed surface of the semiconductor chip 2 and the lead 4. The semiconductor device is bonded to the outer end of the header 4a by the bonding layer 5 and is provided with a stress reducing member 6 which reduces the thermal stress applied to the bonding layer 5 between the semiconductor chip 2 and the header 4a.

5. 发明专利

JPH08205498A FULL-WAVE RECTIFYING APPARATUS 失效
公开(公告)号：JPH08205498A
公开(公告)日：1996-08-09
申请号：JP791195
申请日：1995-01-23
申请人： HITACHI LTD , HITACHI HARAMACHI SEMI CONDUCT
发明人： MIURA MASATAMI , NARITA KAZUTOYO , SUDO KATSUHIKO
IPC分类号： H01L25/00 , H02K19/36
摘要： PURPOSE: To reduce the number of semiconductor elements and eliminate a plurality of heat sinks and insulators for insulating these heat sinks by attaching, within a metal housing, three semiconductor elements mounting a pair of semiconductor chips in direct or through a heat sink. CONSTITUTION: The N layer side of a semiconductor chip 3a and an external lead 4 which becomes a positive DC terminal are connector with soldering and the P layer side of a semiconductor chip 3b and an internal lead 5 for connecting the bottom surface of a metal housing 1 are connected with soldering, and the metal housing 1 is filled with silicone resin 7 to form a pair of semiconductor elements. The metal housing 1 of three semiconductor elements is inserted with pressure into an aluminum bracket 8 of the AC generator and a terminal board fixing the positive DC terminal and AC terminal with epoxy resin is mounted. Thereby, a full-wave rectifying apparatus is formed. Since the semiconductor element is inserted with pressure directly into the bracket, the number of full-wave rectifying apparatuses can be reduced and heat radiation property to the bracket 8 from the semiconductor element can be improved.

6. 发明专利

JP2001111063A DIODE AND ITS MANUFACTURING METHOD 失效
公开(公告)号：JP2001111063A
公开(公告)日：2001-04-20
申请号：JP28383199
申请日：1999-10-05
申请人： HITACHI LTD , HITACHI HARAMACHI SEMI CONDUCT
发明人： MURAKAMI SUSUMU , NARITA KAZUTOYO , MIURA MASATAMI , NAKAJIMA TSUTOMU , SHIKURA TOSHIO
IPC分类号： H01L29/861 , H01L21/329
摘要： PROBLEM TO BE SOLVED: To solve a problem where unevenness appears on an end face in that (111) face is being exposed, the fluctuation of rejection characteristics is large, and reliability is low. SOLUTION: In the diode, a semiconductor substrate and one surface are set to (111) crystal surface, an angle being formed by the horizontal surface of one surface of the semiconductor substrate and a surface where the pn junction between p- and n+-type semiconductor regions is exposed is set to 75 degrees or more and less than 90 degrees.

7. 发明专利

JPH03150866A SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF 失效
公开(公告)号：JPH03150866A
公开(公告)日：1991-06-27
申请号：JP28869089
申请日：1989-11-08
申请人： HITACHI LTD , HITACHI HARAMACHI SEMI CONDUCT
发明人： NARITA KAZUTOYO , NAKAJIMA YOICHI , MIURA MASATAMI , IWAMA TOSHIO
IPC分类号： H01L23/48
摘要： PURPOSE:To improve salt-water-proofness by a method wherein a final sealing layer made of epoxy resin is so formed as to cover a metal vessel and overflow the vessel into a part of a radiation fin. CONSTITUTION:A silicon chip 2 is attached to the inner surface of a dish-type metal vessel 1 having a shallow cylindrical side wall by soldering and the inside of the metal vessel 1 is filled with silicone resin 6. Then epoxy resin 9 is applied so as to cover the header part of the upper lead electrode 4 of the metal vessel 1 which is soldered to the recess of a radiation fin 7 and the upper surface of the silicone resin 6 filling the inside of the metal vessel 1 and overflow the cylindrical side wall of the metal vessel into the whole inside of the recess of the radiation fin 7 to form a sealing layer. With this constitution, the penetration of salt-water into the mesa surface of the silicon chip 2 provided in the metal vessel can be suppressed.

8. 发明专利

JPS6310552A MOLDED SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS6310552A
公开(公告)日：1988-01-18
申请号：JP15402386
申请日：1986-07-02
申请人： HITACHI LTD , HITACHI HARAMACHI SEMI CONDUCT
发明人： MIURA MASATAMI , IWAGAMI MITSUHIRO , FUJII MASAMI , NAKAJIMA YOICHI , YAMAZAKI TATSUO
IPC分类号： H01L23/50 , H01L23/28
摘要： PURPOSE:To improve the reliability of a molded semiconductor device by forming a cutout substantially in the same surface as the brazed part of a terminal to alleviate stresses to the brazed part and an insulating plate through a terminal from a resin. CONSTITUTION:An insulating plate 3 coated with a metal film 7 on a heat sink plate 2, a terminal 1, a semiconductor chip 8 and wirings 9 formed on the plate are electrically connected with brazing materials 10, 10a, the essential part of a molded semiconductor device is coated protectively with soft resin 5, while a hard resin 6 is charged inside a case 4 to shield it from an atmospheric air. The boundary surfaces between the terminal 1 and the resin 6 are not necessarily bonded, and the function of the device is maintained in the terminal strength of handling the device and environments of high temperature and high moisture. Thus, the resin 6 is filled in the cutout 1a of the terminal 1 to prevent it from sliding. The expanding and contracting (stresses) directions of the resin applied to the terminal 1 have X-, Y-, Zand composite directions thereof. For example, a bent (y) due to a stress occurs at the terminal cutout A by the Y-direction stress applied to the terminal 1 to alleviate the stresses applied to the brazing material 10a and the plate 3.

9. 发明专利

JPS63119246A MOLDED SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS63119246A
公开(公告)日：1988-05-23
申请号：JP26382886
申请日：1986-11-07
申请人： HITACHI LTD , HITACHI HARAMACHI SEMI CONDUCT
发明人： MIURA MASATAMI , IWAGAMI MITSUHIRO , FUJII MASAMI , NAKAJIMA YOICHI , YAMAZAKI TATSUO
IPC分类号： H01L23/28 , H01L23/34
摘要： PURPOSE:To avoid the breakdown of an insulating plate and improve heat radiation properties, sealing properties and reliability by a method wherein the bottom part of a barrier which surrounds the insulating plate is provided on a heat diffusion plate and inside the edge of the heat diffusion plate and the inside of the barrier is filled with soft resin. CONSTITUTION:A heat diffusion plate 7 is put on a heat radiation plate 8 and an insulating plate 5 which is covered with a metal covering 6 is put on the heat diffusion plate 7 and semiconductor chips 2, wirings 3 and terminals 1 are provided on the required positions of the insulating plate 5 and electrically bonded with solder 4 beforehand. The bottom part of a barrier 9 which surrounds the insulating plate 5 is placed on the heat diffusion plate 7 and inside the edge of the heat diffusion plate 9 and the barrier 9 is bonded to the heat diffusion plate 7 with adhesive 13. The inside of the barrier 9 is filled with soft resin 10 and the resin 10 is cured. A case 11 is put on the heat radiation plate 8 and filled with hard resin 12 to block the penetration of the external atmosphere. As the edge of the insulating plate 5 is not in contact with the hard resin 12, the breakdown of the insulating plate 5 caused by a thermal stress can be avoided and the penetration of the adhesive 13 is stopped at the edge of the heat diffusion plate 7.

10. 发明专利

JPS62145752A MOLDED TYPE SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS62145752A
公开(公告)日：1987-06-29
申请号：JP28559485
申请日：1985-12-20
申请人： HITACHI LTD
发明人： MIURA MASATAMI , FUJII MASAMI , NAKAJIMA YOICHI , GOTO FUMIO
IPC分类号： H01L23/28 , H01L23/495
摘要： PURPOSE:To obtain a molded type semiconductor device which prevents an insulator from deteriorating and improves its moisture resistance by providing a stress buffer plate between an insulating plate and a terminal to buffer a stress applied from resin through the terminal to the plate. CONSTITUTION:A stress buffer plate 11 is connected through a brazing material 2 at a predetermined position of wirings 4 on an insulating plate 3 via a brazing material 12 with a terminal 1. Thus, a stress of X direction applied from resin 9 through the terminal 1 to the plate 3 is buffered at a portion A of the terminal 1 and a portion B of the plate 11, and a stress of Z direction is buffered at the portion A. Accordingly, it can prevent the insulator from deteriorating. The portion B of the plate 11 buffers a fatigue due to a stress of Y direction between wirings 4 and the terminal 1, and the terminal 1 moves along the stress of the resin 9. Thus, an influence to a boundary between the resin 9 and the terminal 1 is reduced to hold the state approximately a close contact, thereby improving moisture resistance. Further, the plate 11 is used to ignore the directivity of the terminal 1 by altering the direction of the plate 11, thereby readily disposing the terminal 1.

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