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    • 86. 发明专利
    • Electronic equipment
    • 电子设备
    • JP2008108263A
    • 2008-05-08
    • JP2007295469
    • 2007-11-14
    • Brother Ind Ltdブラザー工業株式会社
    • SUGIMOTO TASUKU
    • G06F3/00G06F1/04G06F1/10G06F1/12
    • PROBLEM TO BE SOLVED: To provide electronic equipment driving normally a device, irrespective of a load capacity of a signal line. SOLUTION: A memory module 15M connected to an address bus 63 is controlled by a memory controller 80 provided with an SDRAM control part 82. The SDRAM control part 82 comprises a data control circuit 51 connected to a data bus 61, an address control circuit 53 connected to the address bus 63 via a buffer circuit 83, and a control signal generating circuit 85. The control signal generating circuit 85 inputs a CS# signal indicating timings of receiving an address signal ADR, a RAS# signal, a CAS# signal and a WE# signal, and a CLK signal, into each memory module 15M, through the dedicated signal line L2 prepared in every of the memory modules 15M. Concretely, the control signal generating circuit 85 selects and outputs either of the first CS# signal, or the second CS# signal that is the first CS# signal delayed by a prescribed time, as the CS# signal. COPYRIGHT: (C)2008,JPO&INPIT
    • 要解决的问题:无论信号线的负载能力如何,都能提供正常地驱动设备的电子设备。 解决方案:连接到地址总线63的存储器模块15M由具有SDRAM控制部分82的存储器控​​制器80控制.SDRAM控制部分82包括连接到数据总线61的数据控制电路51,地址 经由缓冲电路83与地址总线63连接的控制电路53以及控制信号生成电路85.控制信号生成电路85输入指示接收地址信号ADR,RAS#信号,CAS的定时的CS#信号 #信号和WE#信号和CLK信号通过在每个存储器模块15M中准备的专用信号线L2分配到每个存储器模块15M中。 具体地,控制信号发生电路85选择并输出作为延迟了规定时间的第一CS#信号的第一CS#信号或第二CS#信号作为CS#信号。 版权所有(C)2008,JPO&INPIT
    • 87. 发明专利
    • Memory controller
    • 内存控制器
    • JP2008108023A
    • 2008-05-08
    • JP2006289495
    • 2006-10-25
    • Canon Incキヤノン株式会社
    • KOBAYASHI YOSHIHIRO
    • G06F12/00G06F1/10
    • Y02D10/13
    • PROBLEM TO BE SOLVED: To make high performance and low power consumption compatible by using a memory element of a DDR type. SOLUTION: A memory module 12 outputs a data signal 62 and a strobe signal 44 showing timing of the data signal 62 when reading data. A delay circuit 40 having an operating lower limit frequency and a delay circuit 42 not having the operating lower limit frequency delay the strobe signal 44 from the memory module 12. Delay times of the delay circuits 40 and 42 are almost a quarter cycle of the strobe signal 44. A selection circuit 50 follows an instruction from a control circuit 70 and selects one of a strobe signal 46 and a strobe signal 48. A flip-flop (FF) 54 follows an output of the selection circuit 50 and latches a data signal 62. An FF 60 follows an inverse value of an output of the selection circuit 50 and latches the data signal 62. COPYRIGHT: (C)2008,JPO&INPIT
    • 要解决的问题:通过使用DDR类型的存储元件来实现高性能和低功耗兼容。 解决方案:存储器模块12输出数据信号62和选通信号44,其中显示数据信号62在读取数据时的定时。 具有工作下限频率的延迟电路40和不具有运行下限频率的延迟电路42将选通信号44从存储器模块12延迟。延迟电路40和42的延迟时间几乎是频闪的四分之一周期 选择电路50遵循来自控制电路70的指令,并选择选通信号46和选通信号48.触发器(FF)54跟随选择电路50的输出并锁存数据信号 FF60遵循选择电路50的输出的反相值并锁存数据信号62.(C)2008,JPO&INPIT