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81. 发明专利

JP2003149176A THIN FILM EXAMINING METHOD AND APPARATUS, AND MICRO- DEVICE MANUFACTURING METHOD 审中-公开
公开(公告)号：JP2003149176A
公开(公告)日：2003-05-21
申请号：JP2001350558
申请日：2001-11-15
申请人： TDK CORP
发明人： YANAGIUCHI KATSUAKI , SHIROMURA WAKAKO
IPC分类号： G01N23/203 , G11B5/39 , G11B5/455
摘要： PROBLEM TO BE SOLVED: To examine thin film formed of well-known composition and neighboring structure thereof simply and with high precision. SOLUTION: A measurement apparatus 101 measures energy spectra of backscattered ions for a sample 111 containing a thin film formed of well-known composition by using Rutherford back scattering spectroscopy under a predetermined condition. A controller 103 determines, through simulation, energy spectra of backscattered ions achieved by the Rutherford back scattering spectroscopy under the same condition as the measurement for the sample 111 for a virtual thin film formed of well-known composition. The controller 103 analyzes the thin film of the sample 111 and its neighboring structure on the basis of the difference between the energy spectra determined by the simulation and the energy spectra measured.

82. 发明专利

JP2002372525A Measuring method of impurity in semiconductor wafer and measuring program of impurity in semiconductor wafer 有权
标题翻译：半导体波导中的测量方法和SEMICONDUCTOR WAFER中的测量程序
公开(公告)号：JP2002372525A
公开(公告)日：2002-12-26
申请号：JP2001181790
申请日：2001-06-15
申请人： Toshiba Corp , 株式会社東芝
发明人： TOMITA MITSUHIRO , SUZUKI MASAMICHI , TATEBE TETSUYA , KOZUKA SHOJI
IPC分类号： G01N1/28 , G01N23/203 , G01N23/225 , G01N27/62 , G01N31/00 , G01N33/00 , H01L21/66
CPC分类号： G01N23/225 , G01N23/203 , Y10T436/24
摘要： PROBLEM TO BE SOLVED: To provide a measuring method of impurities in a semiconductor wafer capable of determining by which technique the true or the most probably true depth direction concentration distribution is acquired, from among a plurality of techniques for acquiring the depth direction concentration distributions. SOLUTION: This method is characterized by having a process for acquiring the reference surface concentration by measuring the surface concentration of the impurities in the semiconductor wafer by a chemical analysis method, a nuclear reaction method, or a Rutherford back scattering spectroscopy, and measuring the depth direction concentration distribution of the impurities in the semiconductor wafer by the plurality of techniques, a process 4 for converting the multiple depth direction concentration distributions into surface concentrations, respectively, and a process for selecting the most similar value to the reference surface concentration from among the converted surface concentrations, and determining the depth direction concentration distribution imparting the selected surface concentration as the accurate depth direction concentration distribution.
摘要翻译：要解决的问题：从用于获取深度方向浓度分布的多种技术中，提供能够确定由哪种技术获得真实或最可能的真深度方向浓度分布的半导体晶片中的杂质的测量方法。解决方案：该方法的特征在于具有通过化学分析法，核反应法或卢瑟福背散射光谱法测量半导体晶片中的杂质的表面浓度来获取参考表面浓度的方法，并测量深度通过多种技术在半导体晶片中的杂质的方向浓度分布，分别将多个深度方向浓度分布转换成表面浓度的方法4和从参考表面浓度中选择最相似的值的方法转化表面浓度，并确定赋予所选择的表面浓度作为精确的深度方向浓度分布的深度方向浓度分布。

83. 发明专利

JP3339243B2 失效
公开(公告)号：JP3339243B2
公开(公告)日：2002-10-28
申请号：JP5865595
申请日：1995-03-17
IPC分类号： G01B15/02 , G01N23/203 , G01N23/207 , H01L21/66

84. 发明专利

JP3271304B2 失效
公开(公告)号：JP3271304B2
公开(公告)日：2002-04-02
申请号：JP17335192
申请日：1992-06-30
IPC分类号： G01N23/225 , G01N23/20 , G01N23/203 , G01Q30/08 , G01Q60/44 , H01J27/24 , H01J37/08 , H01J37/252 , H01J49/40

85. 发明专利

JP2001141677A SYSTEM AND METHOD FOR AUTOMATICALLY INSPECTING SUBSTRATE 失效
公开(公告)号：JP2001141677A
公开(公告)日：2001-05-25
申请号：JP2000288231
申请日：2000-09-22
申请人： KLA INSTR CORP
发明人： MEISBURGER DAN , BRODIE ALAN D , CHADWICK CURT , DESAI ANIL , DOHSE HANS , EMGE DENNIS , GREEN JOHN , JOHNSON RALPH , KIRK CHRIS , LING MING-YIE , MCMURTRY JOHN , BECKER BERRY , JOHN GIBIRISUKO , PAUL RAY , ROBINSON MIKE , PAUL SANDLAND , SIMMONS RICHARD , SMITH DAVID E A , TAYLOR JOHN , VENEKLASEN LEE , WALTERS DEAN , WIECZOREK PAUL , WONG SAM , DUTTA APRIL , LELE SURENDRA , ROUGH KIRKWOOD , PEARCE-PERCY HENRY , JAU JACK Y , JESSIE LYNNE , NGUYEN HOI ZA , OYANG YEN-JEN , HUTCHESON TIMOTHY L
IPC分类号： G01B15/00 , G01B15/08 , G01N23/04 , G01N23/203 , G01N23/225 , G01R31/307 , G03F1/08 , G03F1/16 , H01J37/147 , H01J37/20 , H01J37/22 , H01J37/244 , H01J37/28 , H01L21/027 , H01L21/66
摘要： PROBLEM TO BE SOLVED: To inexpensively and automatically inspect an X-ray mask or a conductive substrate equal thereto by using charged particles. SOLUTION: The position of a substrate is measured to accurately locate charged particle beam on the substrate. The charged particle beam is deflected to the measured desired position of the substrate and the desired position on the surface of the substrate is scanned by the charged particle beam. At least, one charged particles among three types of charged particles, that is, secondary charged particles, back scattered charged particles and transmitted charged particles generated from the upper and bottom surfaces of the substrate as a result are detected. By the above mentioned steps, the substrate is automatically inspected by using charged particles.

86. 实用新型

JP3071226U 失效
公开(公告)号：JP3071226U
公开(公告)日：2000-08-29
申请号：JP2000002149
申请日：2000-02-22
IPC分类号： G01N22/00 , G01N22/02 , G01N23/203

87. 发明专利

JP3036444B2 失效
公开(公告)号：JP3036444B2
公开(公告)日：2000-04-24
申请号：JP31760496
申请日：1996-11-28
IPC分类号： G01N23/203 , H01J37/295

88. 发明专利

JPH11271243A X-RAY ANALYZER 失效
公开(公告)号：JPH11271243A
公开(公告)日：1999-10-05
申请号：JP9105998
申请日：1998-03-19
申请人： JEOL LTD , NIPPON DENSHI ENGINEERING KK
发明人： AMAMIYA MASAMI
IPC分类号： G01N23/20 , G01N23/203
摘要： PROBLEM TO BE SOLVED: To provide an unmanned X-ray analyzer capable of continuously providing a pole point figure. SOLUTION: In analysis by a reflection method, a slit width control means 15 adjusts the slit width d1 so that a first slit 3 may be a divergence X-ray width slit, and also it adjusts the second slit width d2 to the most suitable slit width. In analysis by a transmission method, a rotary stage rotating means 13 rotates a rotary stage 11 clockwise by 90 deg. from the state as shown in the Fig. 2. A third slit 14 is retreated from between the first slit 3 and a sample 2 by the rotation of the rotational stage 11. In the rotation of the rotary stage 11, a rotational table rotating means 9 rotates a rotational table 8 clockwise by 90 deg.. Moreover, the slit width control means 15 adjusts the slit width d1 so that the first slit 3 may be a parallel X-ray width slit, and it adjusts the second slit width d2 to the most suitable slit width.

89. 发明专利

JP2904191B2 失效
公开(公告)号：JP2904191B2
公开(公告)日：1999-06-14
申请号：JP16608997
申请日：1997-06-23
申请人： NIPPON DENKI KK
发明人： KIMURA SHIGERU
IPC分类号： G01N23/203 , G01N23/20 , G01N23/207 , G02B21/00

90. 发明专利

JPH10513265A 失效
公开(公告)号：JPH10513265A
公开(公告)日：1998-12-15
申请号：JP52405796
申请日：1996-01-30
IPC分类号： G01N23/04 , G01N23/20 , G01N23/201 , G01N23/203 , G01V5/00

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