PROBLEM TO BE SOLVED: To provide a measuring method of impurities in a semiconductor wafer capable of determining by which technique the true or the most probably true depth direction concentration distribution is acquired, from among a plurality of techniques for acquiring the depth direction concentration distributions. SOLUTION: This method is characterized by having a process for acquiring the reference surface concentration by measuring the surface concentration of the impurities in the semiconductor wafer by a chemical analysis method, a nuclear reaction method, or a Rutherford back scattering spectroscopy, and measuring the depth direction concentration distribution of the impurities in the semiconductor wafer by the plurality of techniques, a process 4 for converting the multiple depth direction concentration distributions into surface concentrations, respectively, and a process for selecting the most similar value to the reference surface concentration from among the converted surface concentrations, and determining the depth direction concentration distribution imparting the selected surface concentration as the accurate depth direction concentration distribution.