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81. 发明专利

JP2012004275A Method of manufacturing silicon carbide semiconductor device 审中-公开
标题翻译：制造碳化硅半导体器件的方法
公开(公告)号：JP2012004275A
公开(公告)日：2012-01-05
申请号：JP2010136872
申请日：2010-06-16
申请人： Sumitomo Electric Ind Ltd , 住友電気工業株式会社
发明人： ITO SATOMI , SHIOMI HIROSHI , NAMIKAWA YASUO , WADA KEIJI , SHIMAZU MITSURU , HIYOSHI TORU
IPC分类号： H01L29/78 , H01L21/205 , H01L21/302 , H01L21/304 , H01L21/336 , H01L29/12
CPC分类号： H01L21/02057 , H01L21/02236 , H01L21/049 , H01L29/1608 , H01L29/66068 , H01L29/7802
摘要： PROBLEM TO BE SOLVED: To provide a method of manufacturing an SiC semiconductor device with improved performance.SOLUTION: A method of manufacturing an SiC semiconductor device comprises the following steps: an SiC semiconductor including a first surface at least a part of which includes implanted impurity is prepared (Steps S1-S3); a second surface is formed by cleaning the first surface of the SiC semiconductor (Step S4); a film including a Si element is formed on the second surface (Step S5); and an oxide film included in an SiC semiconductor device is formed by oxidizing the film including a Si element (Step S6).
摘要翻译：要解决的问题：提供一种制造具有改进性能的SiC半导体器件的方法。解决方案：制造SiC半导体器件的方法包括以下步骤：制备包括其至少一部分包括注入杂质的第一表面的SiC半导体（步骤S1-S3）; 通过清洗SiC半导体的第一表面形成第二表面（步骤S4）; 在第二表面上形成包括Si元素的膜（步骤S5）; 并且通过氧化包含Si元素的膜来形成包括在SiC半导体器件中的氧化膜（步骤S6）。版权所有（C）2012，JPO＆INPIT

82. 发明专利

JP2012004272A Method for cleaning silicon carbide semiconductor and device for cleaning silicon carbide semiconductor 审中-公开
标题翻译：清洁硅碳化硅半导体的方法和清洁硅碳化硅半导体器件
公开(公告)号：JP2012004272A
公开(公告)日：2012-01-05
申请号：JP2010136869
申请日：2010-06-16
申请人： Sumitomo Electric Ind Ltd , 住友電気工業株式会社
发明人： MIYAZAKI TOMIHITO , WADA KEIJI , HIYOSHI TORU
IPC分类号： H01L21/3065 , H01L21/304
CPC分类号： H01L21/02057 , H01L21/02046 , H01L21/02236 , H01L29/1608
摘要： PROBLEM TO BE SOLVED: To provide a method for cleaning a silicon carbide (SiC) semiconductor and a device for cleaning an SiC semiconductor for cleaning a SiC semiconductor so as to gain favorable surface characteristics.SOLUTION: A method for cleaning an SiC semiconductor includes a step (step S2) of forming an oxide film on the surface of the SiC semiconductor, and a step (step S3) of removing the oxide film. The oxide film is removed by halogen plasma or hydrogen plasma in the step (step S3) of removing the oxide film. Fluorine plasma is preferably used as halogen plasma in the step (step S3) of removing the oxide film.
摘要翻译：要解决的问题：提供一种用于清洁碳化硅（SiC）半导体的方法和用于清洁SiC半导体以清洁SiC半导体的器件，以获得有利的表面特性。解决方案：一种用于清洁SiC半导体的方法包括在SiC半导体的表面上形成氧化膜的步骤（步骤S2）和去除氧化膜的步骤（步骤S3）。在去除氧化膜的步骤（步骤S3）中，通过卤素等离子体或氢等离子体去除氧化膜。在去除氧化膜的步骤（步骤S3）中，优选使用氟等离子体作为卤素等离子体。版权所有（C）2012，JPO＆INPIT

83. 发明专利

JP2012004271A Method for cleaning silicon carbide semiconductor and device for cleaning silicon carbide semiconductor 审中-公开
标题翻译：清洁硅碳化硅半导体的方法和清洁硅碳化硅半导体器件
公开(公告)号：JP2012004271A
公开(公告)日：2012-01-05
申请号：JP2010136868
申请日：2010-06-16
申请人： Sumitomo Electric Ind Ltd , 住友電気工業株式会社
发明人： MIYAZAKI TOMIHITO , WADA KEIJI , HIYOSHI TORU
IPC分类号： H01L21/304
CPC分类号： H01L21/02052 , H01L21/02046 , H01L21/02236 , H01L21/02252 , H01L21/049 , H01L21/67207 , H01L29/1608 , H01L29/66068 , H01L29/7802
摘要： PROBLEM TO BE SOLVED: To provide a method for cleaning a silicon carbide (SiC) semiconductor and a device for cleaning an SiC semiconductor that can exert a cleaning effect on an SiC semiconductor.SOLUTION: A method for cleaning an SiC semiconductor includes a step (step S2) of forming an oxide film on the surface of the SiC semiconductor, and a step (step S3) of removing the oxide film. The step of forming the oxide film uses oxygen plasma. Hydrogen fluoride may be used in the step (step S3) of removing the oxide film.
摘要翻译：要解决的问题：提供一种用于清洁碳化硅（SiC）半导体的方法和用于清洁可以对SiC半导体施加清洁效果的SiC半导体的装置。解决方案：一种用于清洁SiC半导体的方法包括在SiC半导体的表面上形成氧化膜的步骤（步骤S2）和去除氧化膜的步骤（步骤S3）。形成氧化膜的步骤使用氧等离子体。可以在去除氧化膜的步骤（步骤S3）中使用氟化氢。版权所有（C）2012，JPO＆INPIT

84. 发明专利

JP2012004270A Method of cleaning silicon carbide semiconductor, silicon carbide semiconductor, and silicon carbide semiconductor device 审中-公开
标题翻译：清洁碳化硅半导体，碳化硅半导体和碳化硅半导体器件的方法
公开(公告)号：JP2012004270A
公开(公告)日：2012-01-05
申请号：JP2010136867
申请日：2010-06-16
申请人： Sumitomo Electric Ind Ltd , 住友電気工業株式会社
发明人： HIYOSHI TORU , SHIOMI HIROSHI , MIYAZAKI TOMIHITO , WADA KEIJI , MASUDA TAKEYOSHI , ITO SATOMI
IPC分类号： H01L21/304 , H01L29/12 , H01L29/78
CPC分类号： H01L29/7802 , H01L21/02043 , H01L21/02052 , H01L21/02054 , H01L21/02236 , H01L21/02378 , H01L21/02529 , H01L21/02658 , H01L21/044 , H01L21/049 , H01L29/1608 , H01L29/66068
摘要： PROBLEM TO BE SOLVED: To provide a method of cleaning a SiC semiconductor, that can exhibit a cleaning effect to an SiC semiconductor, and to provide an SiC semiconductor and an SiC semiconductor device with improved characteristics.SOLUTION: A method of cleaning an SiC semiconductor comprises a step (Step S2) of forming an oxide film on a surface of an SiC semiconductor and a step (Step S3) of removing the oxide film. In the step of forming (Step S2), the oxide film is formed under a dry atmosphere including an O element at 700°C or more. The SiC semiconductor has a surface with a metal surface density of 1×10cmor less. An SiC semiconductor device comprises the SiC semiconductor and the oxide film formed on the surface of the SiC semiconductor.
摘要翻译：要解决的问题：提供一种可以对SiC半导体具有清洁效果的SiC半导体的清洁方法，并提供具有改进特性的SiC半导体和SiC半导体器件。解决方案：一种清洁SiC半导体的方法包括在SiC半导体的表面上形成氧化膜的步骤（步骤S2）和去除氧化膜的步骤（步骤S3）。在成形步骤（步骤S2）中，在包含O元素的干燥气氛下，在700℃以上形成氧化膜。 SiC半导体具有金属表面密度为1×10 / cm 2以下的表面。 SiC半导体器件包括形成在SiC半导体表面上的SiC半导体和氧化物膜。版权所有（C）2012，JPO＆INPIT

85. 发明专利

JP2011254051A Silicon carbide substrate manufacturing method, semiconductor device manufacturing method, silicon carbide substrate and semiconductor device 审中-公开
标题翻译：硅碳化硅基板制造方法，半导体器件制造方法，碳化硅基板和半导体器件
公开(公告)号：JP2011254051A
公开(公告)日：2011-12-15
申请号：JP2010128841
申请日：2010-06-04
申请人： Sumitomo Electric Ind Ltd , 住友電気工業株式会社
发明人： SASAKI MAKOTO , HARADA MAKOTO , MASUDA TAKEYOSHI , WADA KEIJI , INOE HIROKI , NISHIGUCHI TARO , OKITA KYOKO , NAMIKAWA YASUO , HORII TAKU
IPC分类号： H01L21/02 , H01L21/336 , H01L29/12 , H01L29/78
CPC分类号： H01L29/66068 , H01L21/2007 , H01L21/3247 , H01L29/045 , H01L29/1608 , H01L29/7802
摘要： PROBLEM TO BE SOLVED: To provide a silicon carbide substrate manufacturing method, a semiconductor device manufacturing method, a silicon carbide substrate and a semiconductor device which together make it possible to reduce the manufacturing cost of a semiconductor device using a silicon carbide substrate.SOLUTION: The silicon carbide substrate manufacturing method comprises: a step of preparing a base substrate 10 and a SiC substrate 20; a step of producing a multilayer substrate by stacking the base substrate 10 and the SiC substrate 20 one on top of the other; a step of producing a joined substrate 3 by heating the multilayer substrate; a step of heating the joined substrate 3 so that the temperature of the base substrate 10 is higher than that of the SiC substrate 20, thereby causing voids 30 formed in a junction interface 15 to move in the thickness direction of the jointed substrate 3; and a step of removing a region including a principal plane 10B of the base substrate 10 on the opposite side of the SiC substrate 20 to remove the voids 30.
摘要翻译：要解决的问题：为了提供一种可以降低使用碳化硅衬底的半导体器件的制造成本的碳化硅衬底制造方法，半导体器件制造方法，碳化硅衬底和半导体器件。解决方案：碳化硅衬底制造方法包括：准备基底衬底10和SiC衬底20的步骤; 通过将基底基板10和SiC基板20一个层叠在一起而制造多层基板的工序; 通过加热多层基板来制造接合基板3的工序; 加热接合基板3使得基底基板10的温度高于SiC基板20的温度的步骤，从而使形成在接合界面15中的空隙30在接合基板3的厚度方向上移动; 以及在SiC基板20的相对侧移除包括基板10的主面10B的区域以除去空隙30的步骤。（C）2012，JPO＆INPIT

86. 发明专利

JP2011171374A Silicon carbide insulated gate type semiconductor element and method of manufacturing the same 有权
标题翻译：硅碳化物绝缘栅型半导体元件及其制造方法
公开(公告)号：JP2011171374A
公开(公告)日：2011-09-01
申请号：JP2010031507
申请日：2010-02-16
申请人： Sumitomo Electric Ind Ltd , 住友電気工業株式会社
发明人： MASUDA KENRYO , WADA KEIJI , HONAGA MISAKO
IPC分类号： H01L29/12 , H01L21/336 , H01L29/06 , H01L29/78
CPC分类号： H01L29/7811 , H01L29/0615 , H01L29/0619 , H01L29/0696 , H01L29/1095 , H01L29/1608 , H01L29/41741 , H01L29/42372 , H01L29/66068
摘要： PROBLEM TO BE SOLVED: To provide a silicon carbide insulated gate type semiconductor element 100 having a high breakdown voltage and high performance. SOLUTION: A terminating structure of the silicon carbide insulated gate type semiconductor element 100 has: a semiconductor layer 132 of the first conductivity provided with a first main surface 137; a gate electrode 142; and source wiring 101. An outer peripheral resurf region 105 is provided, and a body region 133 of the second conductivity, a source region 134 of the first conductivity, a contact region 135 of the second conductivity, and the outer peripheral resurf region 105 of the second conductivity are provided inside the semiconductor layer 132. For the outer peripheral resurf region 105, the width of a part not including the body region 133 is at least 1/2 or more of the thickness of the semiconductor layer 132. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供具有高击穿电压和高性能的碳化硅绝缘栅型半导体元件100。解决方案：碳化硅绝缘栅型半导体元件100的端接结构具有：具有第一主表面137的第一导电的半导体层132; 栅电极142; 和源极布线101.设置有外周复原区域105，第二导电体的主体区域133，第一导电性的源极区域134，第二导电性的接触区域135，以及第二导电性的外部区域第二导电性设置在半导体层132的内部。对于外周复制区域105，不包括主体区域133的部分的宽度为半导体层132的厚度的至少1/2以上。版权所有（C）2011，JPO＆INPIT

87. 发明专利

JP2011071195A Method of manufacturing semiconductor substrate 审中-公开
标题翻译：制造半导体基板的方法
公开(公告)号：JP2011071195A
公开(公告)日：2011-04-07
申请号：JP2009219068
申请日：2009-09-24
申请人： Sumitomo Electric Ind Ltd , 住友電気工業株式会社
发明人： SASAKI MAKOTO , HARADA MAKOTO , WADA KEIJI , TAMASO HIDETO , NAMIKAWA YASUO
IPC分类号： H01L21/02 , H01L21/336 , H01L29/12 , H01L29/78
摘要： PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor substrate for efficiently manufacturing a semiconductor device using SiC.
SOLUTION: The method includes preparing a first silicon carbide substrate 11 having a first surface F1 and a first backside B1 opposing to each other and having a single crystal structure, and a second silicon carbide substrate 12 having a second surface F2 and a second backside B2 opposing to each other and having a single crystal structure. The first and second silicon carbide substrates 11, 12 are disposed so that the first and second backsides B1, B2 can be directed in the same direction. After a step of disposition, a connection layer 30 containing carbon, which is bonded to the first and second backsides B1, B2 so as to connect the first and second backsides B1, B2, is formed.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供一种制造半导体衬底的方法，用于使用SiC有效地制造半导体器件。解决方案：该方法包括制备具有彼此相对并具有单晶结构的第一表面F1和第一背面B1的第一碳化硅衬底11和具有第二表面F2和第二表面F2的第二碳化硅衬底12 第二背面B2彼此相对并具有单晶结构。第一和第二碳化硅衬底11,12被布置成使得第一和第二背面B1，B2可以朝向相同的方向。在配置步骤之后，形成包含碳的连接层30，其连接到第一和第二背面B1，B2以连接第一和第二背面B1，B2。版权所有（C）2011，JPO＆INPIT

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