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71. 发明专利

JP2014189436A Silicon carbide epitaxial wafer, manufacturing method and apparatus of the wafer, and silicon carbide semiconductor element 有权
标题翻译：硅碳化硅外延片，制造方法及其制造方法及碳化硅半导体元件
公开(公告)号：JP2014189436A
公开(公告)日：2014-10-06
申请号：JP2013066041
申请日：2013-03-27
申请人： National Institute Of Advanced Industrial & Technology , 独立行政法人産業技術総合研究所 , Rohm Co Ltd , ローム株式会社
发明人： MASUMOTO KEIKO , KOJIMA KAZUSATO , TAMURA KENTARO
IPC分类号： C30B29/36 , C23C16/42 , C30B25/20 , H01L21/20 , H01L21/205
CPC分类号： C30B25/186 , C30B25/20 , C30B29/36 , H01L21/02378 , H01L21/02433 , H01L21/02529 , H01L21/0262 , H01L21/02658 , H01L21/0475 , H01L21/3065 , H01L28/00 , H01L29/04 , H01L29/045 , H01L29/1608
摘要： PROBLEM TO BE SOLVED: To provide a silicon carbide epitaxial wafer that can reduce surface defect density of an epitaxial growth layer to form a silicon carbide semiconductor element having high reliability, and a manufacturing method thereof.SOLUTION: A silicon carbide epitaxial wafer having an α type crystal structure has an epitaxial growth layer arranged on a silicon carbide substrate with a (0001)Si plane tilted at more than 0° and less than 5°. The surface defect density of the epitaxial growth layer is 20/cmor less, the defect density being derived from giant step bunching caused by basal surface dislocation on the substrate surface of the silicon carbide substrate. A manufacturing method of the silicon carbide epitaxial wafer includes a hydrogen etching step for introducing an etching gas to the surface of the silicon carbide substrate and an epitaxial growth layer forming step for introducing a raw material gas to form the epitaxial growth layer on the substrate surface. The hydrogen etching step is practiced under the etching condition that the etching depth is 1 nm or less to the substrate surface.
摘要翻译：要解决的问题：提供可以减少外延生长层的表面缺陷密度以形成具有高可靠性的碳化硅半导体元件的碳化硅外延晶片及其制造方法。解决方案：具有α 型晶体结构具有在（0001）Si平面倾斜大于0°且小于5°的碳化硅衬底上布置的外延生长层。外延生长层的表面缺陷密度为20 / cm以下，缺陷密度来源于碳化硅基板的基板表面上的基面表面位错引起的巨大阶段聚束。碳化硅外延晶片的制造方法具有将蚀刻气体导入到碳化硅基板的表面的氢蚀刻工序，以及在基板表面上引入原料气体而形成外延生长层的外延生长层形成工序。在蚀刻深度相对于基板表面1nm以下的蚀刻条件下实施氢蚀刻工序。

73. 发明专利

JP2014118323A Production method of nitride semiconductor crystal of group 13 metal in periodic table, and nitride semiconductor crystal of group 13 metal in periodic table 审中-公开
标题翻译：第13组金属在周期表中的氮化物半导体晶体的生产方法和第13组金属在氮化物半导体晶体中的生产方法
公开(公告)号：JP2014118323A
公开(公告)日：2014-06-30
申请号：JP2012274707
申请日：2012-12-17
申请人： Mitsubishi Chemicals Corp , 三菱化学株式会社
发明人： KAMATA KAZUNORI , OHATA TATSUHIRO , FUJISAWA HIDEO , KUBO SHUICHI
IPC分类号： C30B29/38 , C30B25/20 , H01L21/205
摘要： PROBLEM TO BE SOLVED: To provide a method capable of producing efficiently a high-quality nitride semiconductor crystal of a group 13 metal in the periodic table having reduced stacking faults generated in the crystal, and having a non-polar surface or a half-polar surface as a main surface.SOLUTION: A nitride semiconductor ground substrate of a group 13 metal in the periodic table obtained by growing a crystal under the presence of a solvent in the supercritical state and/or the subcritical state is used, and a nitride semiconductor crystal of a group 13 metal in the periodic table is produced on the ground substrate by growing the crystal, to thereby enable efficient production of the nitride semiconductor crystal of the group 13 metal in the periodic table having extremely few stacking faults, and having a non-polar surface or a half-polar surface as a main surface.
摘要翻译：要解决的问题：提供一种能够有效地生产周期表中的具有减少的在晶体中产生的堆垛层错的并且具有非极性表面或半极性的周期表中的第13族金属的高质量氮化物半导体晶体的方法表面作为主表面。使用通过在超临界状态和/或亚临界状态的溶剂的存在下生长晶体而在周期表中的第13族金属的氮化物半导体接地衬底，并且氮化物半导体通过生长晶体，在接地衬底上产生周期表中的第13族金属的晶体，从而能够有效地生产具有非常少的堆垛层错的周期表中的第13族金属的氮化物半导体晶体，极性表面或半极性表面作为主表面。

74. 发明专利

JP5446945B2 Method for manufacturing a nitride semiconductor single crystal and a nitride semiconductor substrate 有权
公开(公告)号：JP5446945B2
公开(公告)日：2014-03-19
申请号：JP2010020025
申请日：2010-02-01
申请人：日亜化学工業株式会社
发明人：聖也加納 , 研吾徳岡 , 隆之加藤
IPC分类号： C30B29/38 , C23C16/34 , C30B25/20 , H01L21/205

75. 发明专利

JP2014043388A Manufacturing method of crystal of group-xiii element nitride 审中-公开
标题翻译：第十三类元素氮化物晶体的制备方法
公开(公告)号：JP2014043388A
公开(公告)日：2014-03-13
申请号：JP2013141531
申请日：2013-07-05
申请人： Mitsubishi Chemicals Corp , 三菱化学株式会社
发明人： ENATSU YUKI , KUBO SHUICHI , FUJITO TAKESHI , IKEDA HIROTAKA , NAGAO SATORU , TSUKADA YUSUKE
IPC分类号： C30B29/38 , C23C16/34 , C23C16/52 , C30B25/20 , H01L21/205
摘要： PROBLEM TO BE SOLVED: To provide a method of achieving homoepitaxial growth of a GaN crystal almost free of lamination defects on a nonpolar or semipolar GaN substrate using a HVPE apparatus with a quartz reactor.SOLUTION: A method of growing a crystal of a group-XIII element nitride includes: a first step for raising a temperature of a base substrate to a growth initiation temperature before growing the crystal of the group-XIII element nitride on a principal plane of the base substrate installed in a quartz reactor 100 of a HVPE apparatus; a second step for raising the temperature of the base substrate to a full-growth temperature from the growth initiation temperature while growing a single crystal layer made of the group-XIII element nitride on the principal plane; and a third step for further growing the crystal of the group-XIII element nitride on the single crystal layer grown in the second step while keeping the temperature of the base substrate at the full-growth temperature.
摘要翻译：要解决的问题：提供一种使用具有石英反应器的HVPE装置在非极性或半极性GaN衬底上实现几乎不含层压缺陷的GaN晶体的同质外延生长的方法。解决方案： XIII族元素氮化物包括：第一步骤，用于在安装在HVPE装置的石英反应器100中的基底基板的主平面上生长组ⅩⅢ元素氮化物的晶体之前将基底温度升高至生长起始温度 ; 第二步，在生长由主面上的-III族元素氮化物构成的单晶层的同时，从生长开始温度将基底衬底的温度升高到全生长温度; 以及第三步骤，用于在保持基底基板的温度处于全生长温度的同时在第二步骤中生长的单晶层上进一步生长第ⅩⅢ族元素氮化物的晶体。

76. 发明专利

JP5423568B2 Manufacturing method of a compound semiconductor substrate 有权
公开(公告)号：JP5423568B2
公开(公告)日：2014-02-19
申请号：JP2010105009
申请日：2010-04-30
申请人：サンケン電気株式会社
发明人：憲佐藤
IPC分类号： C30B29/38 , C23C16/34 , C25D7/12 , C30B25/20 , H01L21/205 , H01L29/80
CPC分类号： C30B23/025 , C30B25/183 , C30B25/186 , C30B29/40

77. 发明专利

JP2014027028A SiC EPITAXIAL SUBSTRATE MANUFACTURING DEVICE, METHOD FOR MANUFACTURING SiC EPITAXIAL SUBSTRATE, AND SiC EPITAXIAL SUBSTRATE 审中-公开
标题翻译： SiC外延基板制造装置，制造SiC外延基板的方法和SiC外延基板
公开(公告)号：JP2014027028A
公开(公告)日：2014-02-06
申请号：JP2012164251
申请日：2012-07-25
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： TANAKA TAKANORI , KAWABATA NAOYUKI , MITANI YOICHIRO , TOMITA NOBUYUKI , KUROIWA TAKEHARU
IPC分类号： H01L21/205 , C23C16/42 , C30B25/20 , C30B29/36
摘要： PROBLEM TO BE SOLVED: To provide: a SiC epitaxial substrate manufacturing device, capable of reducing the transmission of basal plane dislocations to an epitaxial layer without deteriorating productivity; a method for manufacturing a SiC epitaxial substrate; and a SiC epitaxial substrate.SOLUTION: A SiC epitaxial substrate manufacturing device 1 of the present invention forms an epitaxial layer on a SiC substrate 14. The SiC epitaxial substrate manufacturing device 1 includes a plurality of temperature ranges, and a moving mechanism for moving the entire of the SiC substrate 14 between the temperature ranges.
摘要翻译：要解决的问题：提供：SiC外延基板制造装置，其能够在不降低生产率的情况下减少基面位错到外延层的透射; 制造SiC外延基板的方法; 和SiC外延基板。本发明的SiC外延基板制造装置1在SiC基板14上形成外延层.SiC外延基板制造装置1包括多个温度范围，以及移动机构整个SiC衬底14在温度范围之间。

78. 发明专利

JP2014001137A GaN SINGLE CRYSTAL SUBSTRATE AND METHOD OF MANUFACTURING THE SAME, AND GaN-BASED SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME 审中-公开
标题翻译： GaN单晶衬底及其制造方法和GaN基半导体器件及其制造方法
公开(公告)号：JP2014001137A
公开(公告)日：2014-01-09
申请号：JP2013198583
申请日：2013-09-25
申请人： Sumitomo Electric Ind Ltd , 住友電気工業株式会社
发明人： FUJIWARA SHINSUKE , UEMATSU KOJI , OSADA HIDEKI , NAKAHATA SEIJI
IPC分类号： C30B29/38 , C30B25/20 , H01L21/205
摘要： PROBLEM TO BE SOLVED: To provide a GaN single crystal substrate which has a large diameter and in which surface orientation of a principal surface has a value other than (0001) and (000-1) and dislocation density within the principal surface is substantially uniform, and a method of manufacturing the substrate.SOLUTION: In the GaN single crystal substrate 20p, an area of a principal surface 20pm is 10 cmor more, surface orientation of the principal surface 20pm is inclined by 65° or more and 85° or less to a (0001) surface or a (000-1) surface 20c, and distribution of dislocation density within the principal surface 20pm is substantially uniform, that is, dispersion of dislocation density to average dislocation density within the principal surface 20pm is within ±100%, for example.
摘要翻译：要解决的问题：为了提供具有大直径并且主表面的表面取向具有不同于（0001）和（000-1）以外的值的GaN单晶衬底，并且主表面内的位错密度基本均匀以及制造基板的方法。解决方案：在GaN单晶衬底20p中，主表面20μm的面积为10cm以上，主表面20μm的表面取向倾斜65°以上85°以下到（0001）表面或（000-1）表面20c，并且主表面20pm内的位错密度分布基本上是均匀的，即位错密度在主表面20pm内的平均位错密度的分散在±100 ％，例如。

79. 发明专利

JP2013249230A Method for manufacturing semiconductor substrate of periodic table group 13 metal nitride 审中-公开
标题翻译：周期表第13组金属氮化物的半导体衬底的制造方法
公开(公告)号：JP2013249230A
公开(公告)日：2013-12-12
申请号：JP2012125491
申请日：2012-05-31
申请人： Mitsubishi Chemicals Corp , 三菱化学株式会社 , Mie Univ , 国立大学法人三重大学
发明人： NAGAO SATORU , ENATSU YUKI , MIYAKE HIDETO
IPC分类号： C30B29/38 , C23C16/02 , C23C16/34 , C30B25/04 , C30B25/20 , H01L21/205
摘要： PROBLEM TO BE SOLVED: To provide a method capable of producing a periodic table group 13 metal nitride semiconductor substrate capable of forming a high quality device structure.SOLUTION: In a method for producing a periodic table group 13 metal nitride semiconductor substrate for growing a periodic table group 13 metal nitride semiconductor crystal using a periodic table group 13 metal nitride semiconductor base substrate 1 in which a crystal face of a main face 2 is a non-polar face or a semi-polar face, it is possible to produce the periodic table group 13 metal nitride semiconductor substrate capable of forming a high quality device structure by arranging grooves 3 with a depth not less than 6 μm in the main face 2 of the base substrate 1 and further advancing crystal growth such that gaps are formed between the base substrate 1 and the periodic table group 13 metal nitride semiconductor crystal.
摘要翻译：要解决的问题：提供能够制造能够形成高质量器件结构的周期表第13族金属氮化物半导体衬底的方法。解决方案：在周期表第13族金属氮化物半导体衬底的制造方法中，使用周期表组13的金属氮化物半导体晶体表13，金属氮化物半导体基板1，其中主面2的晶面为非极性面或半极面，可以制造周期表 13族金属氮化物半导体衬底，其能够通过在基底衬底1的主面2中布置深度不小于6μm的沟槽3并进一步前进晶体生长，从而在基底衬底之间形成间隙，从而形成高质量的器件结构 1和周期表组13金属氮化物半导体晶体。

80. 发明专利

JP2013230976A Nitride semiconductor crystal and method of manufacturing the same 有权
标题翻译：氮化物半导体晶体及其制造方法
公开(公告)号：JP2013230976A
公开(公告)日：2013-11-14
申请号：JP2013131871
申请日：2013-06-24
申请人： Mitsubishi Chemicals Corp , 三菱化学株式会社
发明人： KUBO SHUICHI , SHIMOYAMA KENJI , FUJITO TAKESHI , KIYOMI KAZUMASA
IPC分类号： C30B29/38 , C30B25/20
摘要： PROBLEM TO BE SOLVED: To provide a method of manufacturing a nitride semiconductor crystal of a large area whose variations in the off angle of a surface is small.SOLUTION: A method of manufacturing a nitride semiconductor crystal obtains a nitride semiconductor crystal by growing a semiconductor layer on a seed substrate. The seed substrate includes a plurality of seed substrates of the same material. At least one of the plurality of seed substrates has a different off angle from other seed substrates. When a single semiconductor layer is grown on the plurality of seed substrates, the plurality of seed substrates are arranged in a semiconductor crystal manufacturing device so that the off angle distribution of the single semiconductor layer becomes smaller than the off angle distribution of the plurality of seed substrates and the single semiconductor layer is grown.
摘要翻译：要解决的问题：提供一种制造面积偏离角变化大的面积的氮化物半导体晶体的方法。解决方案：一种制造氮化物半导体晶体的方法通过生长半导体来获得氮化物半导体晶体层在种子基底上。种子基底包括多个相同材料的种子基底。多个种子基底中的至少一个具有与其它种子基底不同的偏角。当在多个晶种基板上生长单个半导体层时，将多个晶种基板布置在半导体晶体制造装置中，使得单个半导体层的偏角分布变得小于多个晶种的偏角分布衬底和单个半导体层生长。

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