专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明专利

JP2014181170A Semiconductor bulk crystal and method of manufacturing semiconductor bulk crystal 审中-公开
标题翻译：半导体晶体晶体和制造半导体大理石晶体的方法
公开(公告)号：JP2014181170A
公开(公告)日：2014-09-29
申请号：JP2013058585
申请日：2013-03-21
申请人： Mitsubishi Chemicals Corp , 三菱化学株式会社
发明人： OHATA TATSUHIRO , ENATSU YUKI , KUBO SHUICHI , FUJITO TAKESHI
IPC分类号： C30B29/38 , C30B25/04 , C30B25/20 , H01L21/205
摘要： PROBLEM TO BE SOLVED: To provide semiconductor bulk crystal which has a nonpolar surface or semipolar surface as a main surface, and includes group III metal nitride crystal having less lamination defects and excellent crystallinity, and a method thereof.SOLUTION: There is provided semiconductor bulk crystal which has group III metal nitride semiconductor crystal 20 grown on a main surface of a ground substrate 10 which has a nonpolar surface or semipolar surface as the main surface, which has a striped recessed part. A cavity 1A is formed between the ground substrate 10 and the grown group III metal nitride semiconductor crystal 20, a surface of the cavity 1A on the side of the group III metal nitride semiconductor crystal 20 has opposite facet surfaces 20A, 20B, and tilt angles of the facet surfaces 20A, 20B from the main surface of the ground substrate 10 are 40°-80°.
摘要翻译：要解决的问题：提供具有非极性表面或半极性表面作为主表面的半导体本体晶体，并且包括具有较小层压缺陷和优异结晶度的III族金属氮化物晶体及其方法。解决方案：提供半导体体具有生长在具有非极性表面或半极性表面作为主表面的接地衬底10的主表面上的III族金属氮化物半导体晶体20的晶体，其具有条纹凹部。在接地衬底10和生长的III族金属氮化物半导体晶体20之间形成空腔1A，III族金属氮化物半导体晶体20一侧的空腔1A的表面具有相对的小面20A，20B和倾斜角从面接地基板10的主表面的面面20A，20B的面积为40°-80°。

2. 发明专利

JP2013230972A Method for producing group iii nitride semiconductor crystal, group iii nitride semiconductor substrate and semiconductor light-emitting device 有权
标题翻译：用于生产III族氮化物半导体晶体，III族氮化物半导体衬底和半导体发光器件的方法
公开(公告)号：JP2013230972A
公开(公告)日：2013-11-14
申请号：JP2013111253
申请日：2013-05-27
申请人： Mitsubishi Chemicals Corp , 三菱化学株式会社
发明人： FUJITO TAKESHI , KIYOMI KAZUMASA
IPC分类号： C30B29/38 , C23C16/01 , C23C16/34 , C30B25/18 , H01L33/16 , H01L33/32
CPC分类号： H01L33/18 , C30B25/20 , C30B29/403 , H01L21/0237 , H01L21/02433 , H01L21/0254 , H01L21/02609 , H01L21/0262 , H01L21/02645 , H01L29/045 , H01L29/2003 , H01L31/1848 , H01L33/00 , H01L33/16 , H01L33/32
摘要： PROBLEM TO BE SOLVED: To provide an advantageous production method for obtaining group III-V compound nitride semiconductor crystal having a high quality, large area non-polar plane.SOLUTION: A production method of group III nitride semiconductor crystal comprises a growing step of preparing a seed crystal S having a non-polar plane followed by growing a group III nitride semiconductor crystal 200 from the non-polar plane in a vapor phase, wherein the group III nitride semiconductor crystal 200 obtained by the growing step has a wall-like portion extending from an M plane of the group III nitride semiconductor seed crystal S to a +C-axis direction ( direction) thereof. By cutting out from the wall-like portion, a bulk crystal of rectangular solid shape with M plane as principal plane is obtained. Two or more M-plane self-supporting substrates are obtained by cutting, slicing and grinding the bulk crystal.
摘要翻译：要解决的问题：提供一种用于获得具有高质量，大面积非极性平面的III-V族化合物氮化物半导体晶体的有利的制造方法。解决方案：III族氮化物半导体晶体的制造方法包括生长步骤具有非极性面的籽晶S，随后在气相中从非极性面生长III族氮化物半导体晶体200，其中通过生长步骤获得的III族氮化物半导体晶体200具有壁状部分从III族氮化物半导体晶种S的M面延伸到+ C轴方向（<0001>方向）。通过从壁状部分切出，获得具有M平面作为主平面的矩形实心形状的块状晶体。通过切割，切片和研磨本体晶体获得两个或多个M平面自支撑基底。

3. 发明专利

JP2013199412A Method for manufacturing group iii nitride semiconductor crystal 审中-公开
标题翻译：制备III类氮化物半导体晶体的方法
公开(公告)号：JP2013199412A
公开(公告)日：2013-10-03
申请号：JP2012069281
申请日：2012-03-26
申请人： Mitsubishi Chemicals Corp , 三菱化学株式会社
发明人： MATSUMOTO SO , ENATSU YUKI , SUZAKI KUNITO , NIWA HIROTSUGU , IKEDA HIROTAKA , FUJITO TAKESHI
IPC分类号： C30B29/38 , C30B25/18
摘要： PROBLEM TO BE SOLVED: To provide a method for manufacturing group III nitride semiconductor crystal widely having an area with fewer stacking faults.SOLUTION: One group III nitride semiconductor crystal is grown from two or more growth start surfaces of base crystal, and the growth surface of the group III nitride semiconductor crystal is grown to an area which is three or more times as large as the total area of the growth start surface of the base crystal so that it is possible to provide high quality group III nitride semiconductor crystal widely having an area with fewer stacking faults.
摘要翻译：要解决的问题：提供广泛地具有较少堆垛层错的区域的III族氮化物半导体晶体的制造方法。解决方案：一个III族氮化物半导体晶体从基晶的两个或更多生长起始面生长，并且生长表面将III族氮化物半导体晶体生长到基底的生长开始面的总面积的三倍以上的面积，使得可以提供广泛地具有堆垛层错少的区域。

4. 发明专利

JP2010275171A Group iii metal nitride crystal and method for production thereof 有权
标题翻译：第III组金属氮化物晶体及其生产方法
公开(公告)号：JP2010275171A
公开(公告)日：2010-12-09
申请号：JP2009132264
申请日：2009-06-01
申请人： Mitsubishi Chemicals Corp , 三菱化学株式会社
发明人： KUBO SHUICHI , SHIMOYAMA KENJI , FUJITO TAKESHI , KIYOMI KAZUMASA , MIKAWA YUTAKA
IPC分类号： C30B29/38 , C23C16/34 , C30B25/20 , H01L21/205
摘要： PROBLEM TO BE SOLVED: To provide a method for production of a large-area group III metal nitride crystal having the optionally specified main plane other than (0001) plane and having high crystallinity.
SOLUTION: The method for production of the group III metal nitride crystal includes the steps of: preparing a plurality of seeds having an off angle; arranging the seeds so that the main planes of the seeds are directed to roughly one direction; and growing the group III metal nitride crystal on the main plane of the seed. In the arranging step, the seeds are arranged so that the off angles of the plurality of seeds are in roughly the same direction.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供一种具有除（0001）面以外的任意规定的主面并具有高结晶度的大面积III族金属氮化物晶体的制造方法。解决方案：第III族金属氮化物晶体的制造方法包括以下步骤：制备多个具有偏角的种子; 安排种子使种子的主平面朝向大致一个方向; 并在种子的主平面上生长III族金属氮化物晶体。在排列步骤中，种子被排列成使得多个种子的偏角大致相同的方向。版权所有（C）2011，JPO＆INPIT

5. 发明专利

JP2009046377A Method for producing nitride semiconductor crystal 有权
标题翻译：生产氮化硅半导体晶体的方法
公开(公告)号：JP2009046377A
公开(公告)日：2009-03-05
申请号：JP2008033347
申请日：2008-02-14
申请人： Mitsubishi Chemicals Corp , 三菱化学株式会社
发明人： KUBO SHUICHI , FUJITO TAKESHI
IPC分类号： C30B29/38 , C30B25/20 , H01L21/205
摘要： PROBLEM TO BE SOLVED: To provide a method for producing a nitride semiconductor crystal where an objective nitride semiconductor can be efficiently grown while suppressing the growth of a polycrystal and where the grown nitride semiconductor crystal can be easily taken out without causing cracks.
SOLUTION: The method for producing the nitride semiconductor crystal comprises a step of growing the nitride semiconductor crystal by supplying raw material gases G3, G4 on a main face where a seed crystal 110 having the main face and its rear face is placed so that the rear face is in contact with a support 107. At least a part of the outer periphery of the rear face of the seed crystal 110 is exposed in the state in contact with the raw material gases G3, G4.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种用于制造氮化物半导体晶体的方法，其中可以有效地生长目标氮化物半导体，同时抑制多晶体的生长，并且其中可以容易地取出生长的氮化物半导体晶体而不引起裂纹。解决方案：用于制造氮化物半导体晶体的方法包括通过在主表面上提供原料气体G3，G4而将氮化物半导体晶体生长的步骤，其中主面上具有主面及其背面的晶种110等后表面与支撑件107接触。晶种110的后表面的外周的至少一部分以与原料气体G3，G4接触的状态暴露。版权所有（C）2009，JPO＆INPIT

6. 发明专利

JP2008290919A Ground substrate for growing group iii nitride semiconductor and method for growing group iii nitride semiconductor 有权
标题翻译：用于生长III族氮化物半导体的接地衬底和用于生长III族氮化物半导体的方法
公开(公告)号：JP2008290919A
公开(公告)日：2008-12-04
申请号：JP2007139839
申请日：2007-05-28
申请人： Mitsubishi Chemicals Corp , 三菱化学株式会社
发明人： FUJITO TAKESHI , NAGAOKA HIROFUMI
IPC分类号： C30B29/38 , C30B25/18 , H01L33/32 , H01S5/323
摘要： PROBLEM TO BE SOLVED: To provide a ground substrate with which a thick-film crystal of a group III nitride semiconductor having a good surface state and cross-sectional shape can be grown. SOLUTION: The ground substrate 112 has a first crystal growth surface 110 and a second crystal growth surface 109 which faces the same direction as a direction to which the first crystal growth surface 110 faces. The second crystal growth surface 109 is consecutively connected to at least 50% of the peripheral edge of or the whole peripheral edge of the first crystal growth surface 110 through a downward step. The first crystal growth surface 110 has a circular shape, and the second crystal growth surface 109 has a ring shape and is concentric with the first crystal growth surface 110. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供可以生长具有良好的表面状态和横截面形状的III族氮化物半导体的厚膜晶体的接地衬底。解决方案：接地衬底112具有面向与第一晶体生长面110所面向的方向相同的方向的第一晶体生长面110和第二晶体生长面109。第二晶体生长表面109通过向下的步骤连续地连接到第一晶体生长表面110的周边边缘或整个周边边缘的至少50％。第一晶体生长表面110具有圆形形状，并且第二晶体生长表面109具有环形并与第一晶体生长表面110同心。版权所有：（C）2009，JPO＆INPIT

7. 发明专利

JP2013227202A Method for manufacturing semiconductor crystal of nitride of group 13 metal in periodic table and semiconductor light-emitting device using semiconductor crystal of nitride of group 13 metal in periodic obtained by the manufacturing method 审中-公开
标题翻译：使用制造方法获得的第13组金属的氮化物的半导体晶体在周期性表和半导体发光器件中制造13族金属的氮化物的半导体晶体的方法
公开(公告)号：JP2013227202A
公开(公告)日：2013-11-07
申请号：JP2013061527
申请日：2013-03-25
申请人： Mitsubishi Chemicals Corp , 三菱化学株式会社
发明人： MITANI HIROSHI , SUZUKI YOSHINORI , FUJITO TAKESHI
IPC分类号： C30B29/38 , C23C16/04 , C23C16/34 , C30B25/04 , H01L21/205 , H01L33/32
摘要： PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor crystal of nitride of group 13 metal in a periodic table, capable of briefly suppressing warps and cracks of the crystal.SOLUTION: A method for manufacturing a semiconductor crystal of nitride of group 13 metal in a periodic table includes a growing step for epitaxially growing the semiconductor crystal of nitride of group 13 metal in a periodic table on a ground substrate, wherein the ground substrate is a crystal different from the crystal to be epitaxially grown, an area ratio (a) of a main surface area Sof the ground substrate and a main surface area Gof the semiconductor crystal of nitride of group 13 metal in the periodic table satisfies an expression (1) over the growing step, and is characterized by using a growth inhibiting member satisfying an expression (2) in the growing step. The expression (1): (area ratio (a))=G/S≤0.90 (S:the main surface area of the ground substrate, and G:the main surface area of the semiconductor crystal of nitride of group 13 metal in the periodic table), the expression (2): T/T≤100 (T:a growth thickness of the semiconductor crystal of nitride of group 13 metal in a periodic table, T:a thickness of the growth inhibiting member).
摘要翻译：要解决的问题：提供能够简单地抑制晶体的翘曲和裂纹的周期表中的第13族金属的氮化物的半导体晶体的制造方法。解决方案：一种用于制造第13族氮化物的半导体晶体的方法周期表中的金属包括用于在接地衬底上在周期表中外延生长第13族金属的氮化物的生长步骤，其中接地衬底是与要外延生长的晶体不同的晶体，面积比（ a）主表面区域Sof的接地衬底和周期表中第13族金属的氮化物的主表面积Gof满足生长步骤中的表达式（1），并且其特征在于使用生长抑制构件在增长的步骤中满足表达式（2）。式（1）:(面积比（a））= G /S≤0.90（S：接地基板的主表面积，G：第13族金属的氮化物半导体晶体的主面积周期表），式（2）：T /T≤100（T：周期表中第13族金属的氮化物的半导体晶体的生长厚度，T：生长抑制构件的厚度）。

8. 发明专利

JP2013224250A Method for producing periodic table group 13 metal nitride semiconductor bulk crystal 有权
标题翻译：用于生产周期表13族金属氮化物半导体大块晶体的方法
公开(公告)号：JP2013224250A
公开(公告)日：2013-10-31
申请号：JP2013039106
申请日：2013-02-28
申请人： Mitsubishi Chemicals Corp , 三菱化学株式会社
发明人： TANAKA HIROYUKI , FUJITO TAKESHI , SUZUKI YOSHINORI
IPC分类号： C30B29/38 , C30B25/14
摘要： PROBLEM TO BE SOLVED: To provide a method for producing a periodic table group 13 metal nitride semiconductor bulk crystal capable of growing the crystal stably for long hours by preventing clogging of an exhaust pipe or the like of a crystal growing apparatus for epitaxially growing the periodic table group 13 metal nitride semiconductor crystal.SOLUTION: By controlling so that an exhaust component in epitaxial growth of a periodic table group 13 metal nitride semiconductor crystal has a temperature below a specific temperature before reaching an exhaust pipe, and by controlling so that the temperature in the exhaust pipe becomes below a specific temperature, the exhaust pipe or the like hardly clogs, and the crystal can be grown stably for long hours.
摘要翻译：要解决的问题：提供一种能够通过防止用于外延生长周期性的晶体生长装置的排气管等的堵塞而能够长时间稳定地生长晶体的周期表第13族金属氮化物半导体本体晶体的制造方法表组13金属氮化物半导体晶体。解决方案：通过控制使得周期表组13金属氮化物半导体晶体的外延生长中的排气成分在到达排气管之前具有低于特定温度的温度，并且通过控制使得温度排气管中的排气管变得低于特定温度时，排气管等几乎不堵塞，并且可以长时间稳定地生长晶体。

9. 发明专利

JP2013209270A Production method for nitride semiconductor crystal of group 13 metal of periodic table, and nitride semiconductor crystal of group 13 metal of periodic table obtained by the production method 审中-公开
标题翻译：第13族金属的周期性金属的氮化物半导体晶体的生产方法和由生产方法获得的周期表的第13族金属的氮化物半导体晶体
公开(公告)号：JP2013209270A
公开(公告)日：2013-10-10
申请号：JP2012082245
申请日：2012-03-30
申请人： Mitsubishi Chemicals Corp , 三菱化学株式会社
发明人： UCHIYAMA YASUHIRO , FUJITO TAKESHI , NAGAO SATORU
IPC分类号： C30B29/38
摘要： PROBLEM TO BE SOLVED: To provide a method for producing a nitride semiconductor crystal in which the warpage amount of crystal axis in the plane is suppressed.SOLUTION: A nitride semiconductor crystal of a group 13 metal of the periodic table is grown so that a growth surface has a facet structure, and then the nitride semiconductor crystal of the group 13 metal of the periodic table is grown so as to bury the facet structure by setting the partial pressure of nitrogen gas to 6.5×10Pa or more. In the growth process, after growing the nitride semiconductor crystal of the group 13 metal of the periodic table so that the growth surface has the facet structure, the nitride semiconductor crystal of the group 13 metal of the periodic table may be grown so as to continuously bury the facet structure.
摘要翻译：要解决的问题：提供一种抑制平面中晶轴的翘曲量的氮化物半导体晶体的制造方法。解决方案：使周期表第13族金属的氮化物半导体晶体生长，使其生长表面具有小面结构，然后生长周期表第13族金属的氮化物半导体晶体，以便通过将氮气的分压设定为6.5×10Pa以上来掩埋小面结构。在生长过程中，在生长周期表的第13族金属的氮化物半导体晶体之后，使得生长表面具有小面结构，可以生长周期表的第13族金属的氮化物半导体晶体，以便连续地生长掩埋小结构。

10. 发明专利

JP2013203605A Method for producing nitride semiconductor crystal of group 13 metal of periodic table 审中-公开
标题翻译：用于生产周期表第13组金属的氮化物半导体晶体的方法
公开(公告)号：JP2013203605A
公开(公告)日：2013-10-07
申请号：JP2012075128
申请日：2012-03-28
申请人： Mitsubishi Chemicals Corp , 三菱化学株式会社
发明人： TANAKA HIROYUKI , FUJITO TAKESHI , SUZUKI YOSHINORI , GODA MASATAKA
IPC分类号： C30B29/38 , C23C16/34 , C30B25/16 , H01L21/205
摘要： PROBLEM TO BE SOLVED: To provide a method for producing a nitride semiconductor crystal of a group 13 metal of the periodic table and effective for reducing warpage generating on the growing surface of the crystal, especially a method for producing a crystal independent of a base substrate, etc.SOLUTION: A nitride semiconductor crystal of a group 13 metal of the periodic table having decreased warpage of growing face 3 can be produced by combining a convex growth in which the growth rate is higher at the center part 4 than at the circumferential part 5 of the growing face and a concave growth in which the growth rate is higher at the circumferential part 5 than at the center part 4 of the growing face.
摘要翻译：要解决的问题：提供一种用于制造周期表第13族金属的氮化物半导体晶体的方法，并且有效地减少晶体的生长表面上的翘曲产生，特别是一种独立于基底的晶体的制造方法等。解决方案：通过组合在中心部分4的生长速率高于圆周部分的凸形生长，可以生产周期表第13族金属的氮化物半导体晶体，其生长面3的翘曲减小 5的生长面和凹部生长，其中生长速率在圆周部分5处比生长面的中心部分4高。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式