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71. 发明专利

JP2000241273A PRESSURE DETECTING DEVICE 失效
公开(公告)号：JP2000241273A
公开(公告)日：2000-09-08
申请号：JP4534899
申请日：1999-02-23
申请人： DENSO CORP
发明人： TANAKA HIROAKI , SUZUKI YASUTOSHI
IPC分类号： G01L9/04 , G01L9/00 , G01L19/04 , H01L29/84
摘要： PROBLEM TO BE SOLVED: To improve temperature characteristics of the detection sensitivity of the pressure detecting device constituted by joining a single-crystal semiconductor chip where a piezoresistance element is formed to one surface side of a metallic diaphragm for pressure detection. SOLUTION: The pressure detecting device 100 is equipped with a metallic stem 20 having a circular diaphragm surface 10, and the single-crystal semiconductor chip 30 which has the side one surface 31 adhered to the side of one surface 11 of the diaphragm surface 10. A pressure medium is introduced into the side of the other surface 12 of the diaphragm surface 10 to detect pressure according to the deformation of the diaphragm surface 10 and single-crystal semiconductor chip 30. The surface azimuth of the single-crystal semiconductor chip 30 is a (100) surface, two piezoresistance elements 51 to 54 each are arranged on the side of the other surface 32 of the single-crystal semiconductor chip 30 along mutually orthogonal crystal axes, and the four piezoresistance elements 51 to 54 are arranged on the circumference around the center K of the diaphragm surface 10.

72. 发明专利

JP2000004028A MANUFACTURE OF SEMICONDUCTOR MECHANICAL SENSOR AND SEMICONDUCTOR PRESSURE SENSOR 失效
公开(公告)号：JP2000004028A
公开(公告)日：2000-01-07
申请号：JP16694098
申请日：1998-06-15
申请人： DENSO CORP
发明人： SUZUKI YASUTOSHI
IPC分类号： G01L9/12 , B81C1/00 , H01L29/84
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor mechanical sensor and a semiconductor pressure sensor at a low cost by a method wherein an N-type semiconductor layer is selectively formed at the support part and the stationary electrode forming part of a sensing structure, or a P-type semiconductor layer is selectively formed at a non-support structure part, a porous silicon layer is formed on the surface of a substrate through anodization, and etching is carried out by making the porous silicon layer serve as a sacrifice layer. SOLUTION: An N-type layer 16 is selectively formed on a part of a P-type silicon substrate 3 where an anchor of beam structure and stationary electrodes 10 and 12 are formed, and then a porous silicon layer 3a is formed by anodization. The porous silicon layer 3a is patterned by an LTSiN 17 for the formation of a silicon layer 18a, the beam structure and the stationary electrodes 10 and 12 are formed by etching, an oxide layer 3b is formed by oxidizing the porous silicon layer 3a, and etching is carried out by making the oxide layer 3b serve as a sacrifice layer, whereby the beam structure and the stationary electrodes 10 and 12 are formed. Two silicon substrates are not required to be laminated together.

73. 发明专利

JPH11295172A SEMICONDUCTOR PRESSURE SENSOR 失效
公开(公告)号：JPH11295172A
公开(公告)日：1999-10-29
申请号：JP9326098
申请日：1998-04-06
申请人： DENSO CORP
发明人： SAKAI MINEICHI , SUZUKI YASUTOSHI
IPC分类号： G01L9/04 , G01L9/00 , G01L19/04
摘要： PROBLEM TO BE SOLVED: To make excellent a temperature characteristic of a sensor chip, and to prevent pressure leakage in a semiconductor pressure sensor with a sensor chip fixed inside a package by an adhesive. SOLUTION: An adhesive (e.g. a silicone gel) 3a having 1×10 Pa or less of Young's modulus is interposed between a bottom face of a sensor chip 2 and a bottom face inside a case, and an adhesive (e.g. a silicone adhesive or an epoxy adhesive) 3b having 1×10 Pa or more of Young's modulus is filled between a side face of the sensor chip 2 and an inner circumferential face of the case 1.

74. 发明专利

JPH10170368A SEMICONDUCTOR DEVICE AND ITS MANUFACTURE 失效
公开(公告)号：JPH10170368A
公开(公告)日：1998-06-26
申请号：JP32997596
申请日：1996-12-10
申请人： DENSO CORP
发明人： OBA NOBUKAZU , IKUTA TOSHIO , SAKAI MINEICHI , FUKADA TAKESHI , SUZUKI YASUTOSHI
IPC分类号： G01L9/04 , B81B3/00 , G01L9/00 , H01L29/84
摘要： PROBLEM TO BE SOLVED: To improve the leaking characteristic of leakage currents which occur at the P-N junctions between gauge resistors and an epitaxial layer in a semiconductor pressure detecting device. SOLUTION: A semiconductor device is provided with a diaphragm part C formed by removing part of the P -type silicon substrate 1 of a substrate composed of the silicon substrate l and an N -type epitaxial layer 2 and gauge resistors 3 and N -type diffusion layers 6 for fixing potential which are formed in the surface-layer part of the epitaxial layer 2. The diffusion layers 6 are formed so that the diffusion layers 6 can surround the periphery of the diaphragm part C. Because of the diffusion layers 6, the potential gradient in the epitaxial layer 2 can be reduced and the potential differential at the P-N junctions between the resistors 3 and epitaxial layer 2 can be made smaller.

75. 发明专利

JPH1078364A SEMICONDUCTOR TYPE PRESSURE SENSOR 失效
公开(公告)号：JPH1078364A
公开(公告)日：1998-03-24
申请号：JP23433296
申请日：1996-09-04
申请人： DENSO CORP
发明人： TOYODA INEO , IKEDA KAZUHISA , MIZUNO KOJU , SUZUKI YASUTOSHI , FUKADA TAKESHI , OKADA HIROSHI , OBA NOBUKAZU
IPC分类号： G01L9/04 , G01L9/00
摘要： PROBLEM TO BE SOLVED: To prevent the degradation of sensor accuracy by thermal strain when a silicon pedestal is soldered to a metallic stem. SOLUTION: This pressure sensor is provide with a silicon chip 1 having a diaphragm la displaced by receiving pressure and a silicon pedestal 3 having a pressure introducing hole to introduce pressure to the diaphragm la, and the silicon pedestal 3 is soldered to a metallic stem 6 by solder 5. In this case, the silicon pedestal 3 is joined to the silicon chip 1 by joining glass 4, and a height of the silicon pedestal 3 is set not less than 1.8mm, and a thickness of the silicon chip 1 is set not less than 500μm, and the size of the silicon chip 1 is set not more than 2.65sq.mm, and a thickness of the joining glass 4 is set not less than 0.15mm, and a thickness of the solder 4 is set not more than 25μm.

76. 发明专利

JPH1027922A MANUFACTURE OF OPTICAL SENSOR 失效
公开(公告)号：JPH1027922A
公开(公告)日：1998-01-27
申请号：JP18249996
申请日：1996-07-11
申请人： DENSO CORP
发明人： INOUE KEIJIROU , TOYODA INEO , SUZUKI YASUTOSHI
IPC分类号： H01L27/14 , H01L31/10
摘要： PROBLEM TO BE SOLVED: To provide an integrated circuit having a photoelectric converter which can set a thickness of an oxide film formed on a light receiving part of the photoelectric converter so as to provide a small variation for its light transmission factor and to improve light reception characteristics, even when the oxide film varies in its thickness. SOLUTION: Oxide films 17b and 18 are formed on a light receiving part of a photodiode 3 formed on a silicon substrate 1. In this case, the oxide films 17b and 18 are formed on the basis of an oxide-film-thickness characteristic curve of the light receiving part representing a relationship between a light transmission factor on the surface of the light receiving part and the thicknesses of the oxide films 17b and 18. However, since the light transmission factor remarkably changes in the vicinity of a first peak film thickness on the character curve providing a maximum light transmission factor the formation of the oxide films 17b and 18 is carried out, based on another peak film thickness other than the first peak as a target.

77. 发明专利

JPH09283730A MANUFACTURE OF PHOTOSENSOR 失效
公开(公告)号：JPH09283730A
公开(公告)日：1997-10-31
申请号：JP32442896
申请日：1996-12-04
申请人： DENSO CORP
发明人： TOYODA INEO , INOUE KEIJIROU , SUZUKI YASUTOSHI
IPC分类号： H01L27/14 , H01L31/10
摘要： PROBLEM TO BE SOLVED: To provide a photosensor capable of improving the characteristics, sensitivity, etc., of a photoelectric transfer part. SOLUTION: On a silicon substrate 1, a photo diode part 3 and a signal processing circuit part 7 are formed, and a silicon oxide film 17b is formed on the light receiving part of the photodiode part 3. On the substrate 1, an aluminum thin film is accumulated, and the aluminum thin film is patterned to be left as a protection film on the wiring and light receiving part on the circuit part 7. On the substrate including the top of the aluminum thin film, an interlayer insulating film 34 is accumulated, the insulating film 34 on the light receiving part of the photo diode part 3 is removed, an aluminum thin film is accumulated on the insulating film 34, and the aluminum thin film on the light receiving part of the photo diode part 3 is removed by etching, leaving the aluminum film on the circuit part 7 as a light shielding film.

78. 发明专利

JPH0936387A METHOD FOR MANUFACTURING SEMICONDUCTOR SENSOR FOR AMOUNT OF DYNAMICS 失效
公开(公告)号：JPH0936387A
公开(公告)日：1997-02-07
申请号：JP20538795
申请日：1995-07-18
申请人： DENSO CORP
发明人： KARESUE SHIYOUWA , AO KENICHI , UENOYAMA HIROBUMI , SUZUKI YASUTOSHI , YAMADA TOSHITAKA , OTA TAMEJI , WATANABE TAKAMOTO , TAKEUCHI YUKIHIRO
IPC分类号： G01L1/18 , G01P15/125 , H01L21/26 , H01L21/316 , H01L21/318 , H01L29/84
摘要： PROBLEM TO BE SOLVED: To easily eliminate an electron which is trapped by the interface of two insulation films by applying such electromagnetic wave as ultraviolet ray to the interface between a second insulation film and a first insulation film in a process after the second insulation film is formed. SOLUTION: Ion is implanted to a specific region of a silicon substrate 10 to form a drain region 11, a source region 12, and conductive layers 17 and 18. Then, only a sacrifice layer is eliminated by etching and 5,000Å gap 20 is formed between a movable member 15 and the surface of the silicon substrate 10. At this time, Si3 N4 film 14 prevents SiO2 film 13 from being etched. Then, ultraviolet rays are uniformly applied to the surface of the Si3 N4 film 14 for at least 40 minutes via the movable member 15 using a mercury lamp. When the Si3 N4 film 14 is 500Å thick, an electron which is trapped at an interface level can be completely eliminated by applying ultraviolet rays for at least 40 minutes.

79. 发明专利

JP2006119153A Production method for moisture sensitive element for humidity sensor 有权
标题翻译：湿度传感器湿度敏感元件的生产方法
公开(公告)号：JP2006119153A
公开(公告)日：2006-05-11
申请号：JP2006006141
申请日：2006-01-13
申请人： Denso Corp , Nippon Soken Inc , 株式会社デンソー , 株式会社日本自動車部品総合研究所
发明人： ASAUMI KAZUSHI , YOSHIDA TAKAHIKO , TOYODA INEO , SUZUKI YASUTOSHI
IPC分类号： G01N27/22 , C08G73/10
摘要： PROBLEM TO BE SOLVED: To provide a high-sensitivity humidity sensor having an excellent initial characteristic and fluctuation characteristic after left in high temperature and high humidity.
SOLUTION: This humidity sensor uses a moisture sensitive element with a polyimide having at least four benzene rings on a diamine side as a moisture sensitive film. Preferably, the moisture sensitive element can be selected from a moisture sensitive element with a polyimide having at least four benzene rings and at least one sulfonyl group on the diamine side as the moisture sensitive film, a moisture sensitive element with a polyimide having at least four benzene rings and at least one polyfluoroalkyl group on the diamine side as the moisture sensitive film, and a moisture sensitive element with a polyimide obtained by terminating a polyamic acid that is a precursor of the polyimides by terminal acetylene and performing dehydration and ring closure to it, as the moisture sensitive film.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种在高温高湿下留下的具有优异的初始特性和波动特性的高灵敏度湿度传感器。解决方案：该湿度传感器使用具有在二胺侧具有至少四个苯环的聚酰亚胺的湿敏元件作为湿敏膜。优选地，水分敏感元件可以选自具有至少四个苯环和二胺侧上的至少一个磺酰基的聚酰亚胺作为湿敏膜的湿敏元件，具有至少四个的聚酰亚胺的湿敏元件苯环和作为湿敏膜的二胺侧至少一个多氟烷基，以及具有聚酰亚胺的水分敏感元件，其通过端基乙炔封端作为聚酰亚胺的前体的聚酰胺酸，并进行脱水和闭环。，作为湿敏膜。版权所有（C）2006，JPO＆NCIPI

80. 发明专利

JP2005257590A Humidity-sensitive film precursor and capacity type humidity sensor manufacturing method 有权
标题翻译：湿度敏感膜前体和容量型湿度传感器制造方法
公开(公告)号：JP2005257590A
公开(公告)日：2005-09-22
申请号：JP2004072159
申请日：2004-03-15
申请人： Denso Corp , Nippon Soken Inc , 株式会社デンソー , 株式会社日本自動車部品総合研究所
发明人： ISOGAI TOSHIKI , YOSHIDA TAKAHIKO , SUZUKI YASUTOSHI , YOKURA HISANORI , ITAKURA TOSHIKAZU
IPC分类号： G01N27/22
摘要： PROBLEM TO BE SOLVED: To provide a humidity-sensitive film precursor, capable of enhancing the adhesion of a humidity-sensitive film to a substrate, and to provide a capacity type humidity sensor manufacturing method. SOLUTION: In the capacity type humidity sensor 100 equipped with a semiconductor substrate 10, having a pair of electrodes 31 and 32 arranged in the same plance so as to be spaced apart from each other, arranged in facing relation, and the humidity-sensitive film 50, comprising a polyimide polymer formed on the semiconductor substrate 10 so as to be covered between the pair of the electrodes 31 and 32 and pair of the electrodes 31 and 32, the humidity-sensitive film precursor obtained by covalently bonding a trialkoxysilane compound to polyamic acid which is a polyimide precursor is used to form a humidity-sensitive film 50 on the semiconductor substrate 10 (silicon nitride film 40). Accordingly, the semiconductor substrate 10 and the humidity-sensitive film 50 are bonded more closely by a covalent bond which is superior to a hydrogen bond in bonding energy than before. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供能够提高湿敏膜对基材的粘附性的湿敏膜前体，并提供容量型湿度传感器的制造方法。解决方案：在配备有半导体基板10的容量型湿度传感器100中，具有以相对于彼此间隔开的方式相互排列的一对电极31和32，以相对的方式布置，并且湿度感光膜50包括形成在半导体衬底10上以覆盖在一对电极31和32与一对电极31和32之间的聚酰亚胺聚合物，通过共价键合三烷氧基硅烷获得的湿度敏感膜前体使用作为聚酰亚胺前体的聚酰胺酸的化合物在半导体基板10（氮化硅膜40）上形成湿敏膜50。因此，半导体衬底10和湿敏膜50通过键合能量比以前优于氢键的共价键更紧密地键合。版权所有（C）2005，JPO＆NCIPI

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