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61. 发明专利

JP5588642B2 Tunnel junction magnetoresistive head and a method of manufacturing the same 有权
公开(公告)号：JP5588642B2
公开(公告)日：2014-09-10
申请号：JP2009202412
申请日：2009-09-02
申请人：エイチジーエスティーネザーランドビーブイ
发明人：浩一西岡 , 浩二阪本
IPC分类号： G11B5/39 , H01F10/16 , H01F41/22 , H01L43/08 , H01L43/10 , H01L43/12

62. 发明专利

JP2014157985A Magnetoresistive element for sensor, and sensor circuit 有权
标题翻译：传感器和传感器电路的电磁元件
公开(公告)号：JP2014157985A
公开(公告)日：2014-08-28
申请号：JP2013029151
申请日：2013-02-18
申请人： Denso Corp , 株式会社デンソー
发明人： FURUICHI TAKAMOTO , YANO SATOSHI , KANO KAZUHIKO
IPC分类号： H01L43/08 , G01R33/09 , G11B5/39 , H01F10/14 , H01F10/16 , H01F10/32 , H01L43/10
摘要： PROBLEM TO BE SOLVED: To provide a magnetic sensor 10 suitable for detection of weak magnetic field such as geomagnetism.SOLUTION: A magnetic sensor 10 comprises: a substrate 11; a pin layer 13 formed along the substrate 11 and having the magnetization direction fixed in the in-plane direction of the substrate 11; a free layer 15 formed along one side 11a of the substrate 11 and having the magnetization direction which changes while following the external magnetic field; and an intermediate layer 14 sandwiched between the pin layer 13 and free layer 15 and having the resistance which changes by the angle between the magnetization direction of the pin layer 13 and the magnetization direction of the free layer 15. Magnetization stabilization direction of the free layer is perpendicular to the free layer, and the anisotropy field of the free layer 15 in the in-plane direction is 50-75 (mT). Consequently, a TMR element suitable for detection of weak magnetic field such as geomagnetism can be configured.
摘要翻译：要解决的问题：提供适于检测诸如地磁等弱磁场的磁传感器10.解决方案：磁传感器10包括：基板11; 沿着基板11形成并具有沿基板11的面内方向固定的磁化方向的销层13; 沿着基板11的一侧11a形成的具有随着外部磁场而变化的磁化方向的自由层15; 以及夹在引脚层13和自由层15之间并具有由引脚层13的磁化方向与自由层15的磁化方向之间的角度变化的电阻的中间层14。自由层的磁化稳定方向垂直于自由层，自由层15在面内方向的各向异性场为50-75（mT）。因此，可以配置适合于检测诸如地磁的弱磁场的TMR元件。

63. 发明专利

JP5570824B2 Magneto-resistance effect element and method of forming the same 有权
公开(公告)号：JP5570824B2
公开(公告)日：2014-08-13
申请号：JP2010004623
申请日：2010-01-13
申请人：ヘッドウェイテクノロジーズインコーポレイテッド
发明人： ▲丹▼ ▲赴▼ , ▲恵▼娟王 , 民李 , 坤亮張
IPC分类号： H01L43/08 , G01R33/09 , G11B5/39 , H01F10/16 , H01F10/32 , H01L43/10 , H01L43/12
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G01R33/098 , G11B5/3906 , H01L43/08 , H01L43/10 , H01L43/12

64. 发明专利

JP2014135449A Magnetoresistance effect element and method of manufacturing the same 审中-公开
标题翻译：磁阻效应元件及其制造方法
公开(公告)号：JP2014135449A
公开(公告)日：2014-07-24
申请号：JP2013003838
申请日：2013-01-11
申请人： Toshiba Corp , 株式会社東芝
发明人： NAGAMINE MAKOTO , IKENO DAISUKE , UEDA KOJI , NISHIYAMA KATSUYA , NATORI KATSUAKI , YAMAKAWA KOJI
IPC分类号： H01L43/10 , G11B5/39 , H01F10/16 , H01F10/32 , H01L21/8246 , H01L27/105 , H01L29/82 , H01L43/08 , H01L43/12
摘要： PROBLEM TO BE SOLVED: To obtain a magnetoresistance effect element having a high MR ratio.SOLUTION: The magnetoresistance effect element of the present embodiment includes: a first magnetic layer; a tunnel barrier layer formed on the first magnetic layer; a second magnetic layer formed on the tunnel barrier layer; an insulating layer being in contact with an end of the first magnetic layer or the second magnetic layer; and a boron adsorbing layer being in contact with either an upper surface of the first magnetic layer or a lower surface of the second magnetic layer. The concentration of boron is lower at the end of the first magnetic layer or the second magnetic layer than at the center thereof. The insulating layer contains a metal selected from C, N, Mg, Al, Ti, V, Cr, Mn, Co, Ni, Fe, Zr, Mo, Nb, La, Ce, Hf, Ta, and W.
摘要翻译：要解决的问题：获得具有高MR比的磁阻效应元件。解决方案：本实施例的磁阻效应元件包括：第一磁性层; 形成在所述第一磁性层上的隧道势垒层; 形成在隧道势垒层上的第二磁性层; 绝缘层与所述第一磁性层或所述第二磁性层的端部接触; 以及与第一磁性层的上表面或第二磁性层的下表面接触的硼吸附层。在第一磁性层或第二磁性层的末端，硼的浓度比在其中心低。绝缘层包含选自C，N，Mg，Al，Ti，V，Cr，Mn，Co，Ni，Fe，Zr，Mo，Nb，La，Ce，Hf，Ta和W.

65. 发明专利

JP5537554B2 Magnetic memory 有权
公开(公告)号：JP5537554B2
公开(公告)日：2014-07-02
申请号：JP2011532872
申请日：2009-09-28
申请人：株式会社東芝
发明人：尚徳相川 , 正甲斐 , 昌彦中山 , 純夫池川 , 尚治下村 , 英二北川 , 達也岸 , 淳一小瀬木 , 博明與田 , 暁志柳
IPC分类号： H01L27/105 , H01F10/14 , H01F10/16 , H01F10/26 , H01F10/32 , H01L21/8246 , H01L29/82 , H01L43/08 , H01L43/10
CPC分类号： H01L43/08 , G11C11/161 , H01L27/228

66. 发明专利

JP5515044B2 Magnetic recording apparatus 有权
公开(公告)号：JP5515044B2
公开(公告)日：2014-06-11
申请号：JP2010002243
申请日：2010-01-07
申请人：学校法人工学院大学 , 山森一毅
发明人：和悦吉田
IPC分类号： G11B5/31 , H01F10/14 , H01F10/16 , H01L29/82 , H01L43/08 , H01L43/10

67. 发明专利

JP2014103172A Magnetic thin film, manufacturing method therefor, high frequency oscillation device using magnetic thin film, magnetic head, magnetic recording medium, and magnetic recorder/reproducer 审中-公开
标题翻译：磁薄膜，其制造方法，使用磁薄膜，磁头，磁记录介质和磁记录器/再现器的高频振荡器件
公开(公告)号：JP2014103172A
公开(公告)日：2014-06-05
申请号：JP2012252623
申请日：2012-11-16
申请人： Toshiba Corp , 株式会社東芝 , Tohoku Univ , 国立大学法人東北大学 , Showa Denko Kk , 昭和電工株式会社
发明人： TAKEO AKIHIKO , KIKITSU SATORU , MAEDA TOMOYUKI , TAKAHASHI KEN , SAITO SHIN , INOUE TAKESHI , KUROKAWA GOHEI
IPC分类号： H01F10/32 , G11B5/02 , G11B5/31 , G11B5/64 , G11B5/667 , G11B5/738 , G11B5/84 , H01F10/16 , H01L29/82 , H01L43/08 , H01L43/10
CPC分类号： G11B5/1278 , G11B5/235 , G11B5/3146 , G11B5/656 , G11B5/732 , G11B5/7325 , G11B2005/0024 , H01F10/30 , H01F10/3286 , H01F10/329 , H01F41/30 , H03B15/006 , H03B28/00
摘要： PROBLEM TO BE SOLVED: To provide a magnetic thin film having strong negative anisotropy suitable as a high frequency oscillator material oscillating with a high frequency of 20 GHz or more, or a soft magnetic lining layer material of a perpendicular magnetic recording medium.SOLUTION: In a magnetic thin film having negative anisotropy of -6×10erg/cmand having, at least on a nonmagnetic substrate, a seed layer composed of one layer or more of metal or a metal compound, a ruthenium base layer for controlling the orientation of a layer immediately above, and a magnetic layer containing two kinds of Co and Ir, having negative anisotropy in the direction normal to the film surface, as main components, the additive element concentration of Ir in the magnetic layer is 10-45 at%.
摘要翻译：要解决的问题：提供具有强的负各向异性的磁性薄膜，其适合作为以20GHz以上的高频振荡的高频振荡器材料，或垂直磁记录介质的软磁衬层材料。解决方案：在具有-6×10erg / cm的负各向异性的磁性薄膜，并且至少在非磁性基底上具有由一层或多层金属或金属化合物构成的晶种层，用于控制层的取向的钌基底层并且具有与膜表面垂直的方向具有负各向异性的两种Co和Ir的磁性层作为主要成分，磁性层中的Ir的添加元素浓度为10-45原子％。

68. 发明专利

JP5448438B2 Magnetic read head 有权
公开(公告)号：JP5448438B2
公开(公告)日：2014-03-19
申请号：JP2008323473
申请日：2008-12-19
申请人：エイチジーエスティーネザーランドビーブイ
发明人：浩二阪本 , 浩一西岡 , 勝也光岡 , 勝美星野 , 陽佐藤
IPC分类号： G11B5/39 , H01F10/13 , H01F10/16 , H01F10/32 , H01L43/08 , H01L43/10
CPC分类号： G01R33/098 , B82Y10/00 , B82Y25/00 , G11B5/3906 , G11B5/3929 , G11B2005/3996 , H01F10/16 , H01F10/1936 , H01F10/3272 , H01F10/3281 , H01F10/3295

69. 发明专利

JP2014049145A Magnetic head, and magnetic storage device 有权
标题翻译：磁头和磁储存装置
公开(公告)号：JP2014049145A
公开(公告)日：2014-03-17
申请号：JP2012189082
申请日：2012-08-29
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： SHIROISHI YOSHIHIRO , WATANABE KATSURO , SATO AKIRA
IPC分类号： G11B5/31 , G11B5/02 , G11B5/39 , H01F10/16 , H01F10/26 , H01L29/82 , H01L43/08 , H01L43/10
CPC分类号： G11B5/3909 , G11B5/235 , G11B5/3106 , G11B5/3146 , G11B5/3945 , G11B5/3967 , G11B2005/0024 , Y10T428/1114 , Y10T428/1121 , Y10T428/1171
摘要： PROBLEM TO BE SOLVED: To provide an STO (Spin Torque Oscillator) which has a high corrosion resistance, reliability during power supply thereto, a high frequency oscillation efficiency and a strong high frequency magnetic field, an STO sensor element, a microwave-assisted magnetic recording head, and a highly reliable magnetic storage device which has the magnetic head mounted thereon and has a large capacity and high reliability.SOLUTION: An STO includes a foundation layer, a first magnetic layer provided on the foundation layer, a nonmagnetic intermediate layer provided on the first magnetic layer, and a second magnetic layer provided on the nonmagnetic intermediate layer. The nonmagnetic intermediate layer is composed of a nonmagnetic alloy containing 50 atm% or more of at least one element selected from a first group consisting of Cu, Ag and Au, and further containing, in total, 0.1 atm% or more of at least one element which is selected from a second group consisting of Cu, Ag, Au, Cr, Ti, Zr, Hf, V, Nb, Ta, Ru, Os, Pd, Pt, Ph and Ir and is not the elements selected from the first group.
摘要翻译：要解决的问题：提供一种STO（旋转扭矩振荡器），其具有高耐腐蚀性，在其供电期间的可靠性，高频振荡效率和强大的高频磁场，STO传感器元件，微波辅助磁记录头，以及具有安装在其上的磁头的高度可靠的磁存储装置，具有大容量和高可靠性。解决方案：STO包括基础层，设置在基础层上的第一磁性层，提供的非磁性中间层在第一磁性层上，以及设置在非磁性中间层上的第二磁性层。非磁性中间层由含有50atm％以上的至少一种元素的非磁性合金构成，所述元素选自由Cu，Ag和Au组成的第一组，并且还含有至少一个0.1atm％以上的至少一种元素，其选自由Cu，Ag，Au，Cr，Ti，Zr，Hf，V，Nb，Ta，Ru，Os，Pd，Pt，Ph和Ir组成的第二组，并且不是选自第一组。

70. 发明专利

JP5433284B2 Mtj device and method of forming the same, the production method of stt-ram 有权
公开(公告)号：JP5433284B2
公开(公告)日：2014-03-05
申请号：JP2009095227
申请日：2009-04-09
申请人：マグアイシーテクノロジーズインコーポレイテッドMagIC Technologies, Inc.
发明人：成宗洪 , 茹瑛童 , 一民郭
IPC分类号： H01L43/08 , H01F10/16 , H01F10/32 , H01L21/8246 , H01L27/105 , H01L29/82 , H01L43/12
CPC分类号： H01L43/08 , H01L43/12 , Y10S977/883

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