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    • 62. 发明专利
    • Semiconductor device
    • 半导体器件
    • JP2013197122A
    • 2013-09-30
    • JP2012059479
    • 2012-03-15
    • Toshiba Corp株式会社東芝
    • MATSUDAI TOMOKOOGURA TSUNEO
    • H01L27/04H01L21/8234H01L27/06H01L27/088H01L29/739H01L29/78
    • H01L29/7397H01L27/0623H01L27/0629H01L29/0649H01L29/0653H01L29/0692H01L29/0804H01L29/0821H01L29/0834H01L29/1004H01L29/407H01L29/417H01L29/41708H01L29/45H01L29/6609H01L29/66333H01L29/66348H01L29/7395H01L29/7813H01L29/861H01L29/8613
    • PROBLEM TO BE SOLVED: To provide a semiconductor device capable of achieving both improvement of recovery characteristics and maintenance of ohmic contact properties, of a diode in an RC-IGBT.SOLUTION: A semiconductor device comprises: a substrate consisting of a first conductivity type semiconductor; a base layer provided on one side surface of the substrate and consisting of a second conductivity type semiconductor; an anode layer formed by increasing a total impurity amount in a region of a part of the base layer; an IGBT region formed in the base layer; a diode region formed in the anode layer; a trench reaching from surface sides of the IGBT region and the diode region to the substrate, and in which an occupied area of the trench in the diode region is different from that in the IGBT region; a drain layer consisting of the second conductivity type semiconductor facing to the IGBT region and provided on the other side surface of the substrate; and a cathode layer consisting of the first conductivity type semiconductor facing to the diode region and adjacent to the drain layer.
    • 要解决的问题:提供能够实现RC-IGBT中的二极管的恢复特性和欧姆接触特性的维持的半导体器件。解决方案:半导体器件包括:由第一导电类型半导体 ; 基底层,设置在所述基板的一个侧表面上,并由第二导电型半导体构成; 通过增加基底层的一部分的区域中的总杂质量而形成的阳极层; 形成在所述基极层中的IGBT区域; 形成在所述阳极层中的二极管区域; 从所述IGBT区域的表面侧和所述二极管区域到达所述基板的沟槽,并且所述二极管区域中的所述沟槽的占用面积与所述IGBT区域不同的沟槽; 由与所述IGBT区域相对的第二导电型半导体构成的漏极层,设置在所述基板的另一侧面上; 以及由面向二极管区域并与漏极层相邻的第一导电型半导体构成的阴极层。
    • 66. 发明专利
    • Semiconductor device
    • 半导体器件
    • JP2009059999A
    • 2009-03-19
    • JP2007227515
    • 2007-09-03
    • Rohm Co Ltdローム株式会社
    • OKAZAKI TADAHIRO
    • H01L29/861H01L29/41
    • H01L29/417H01L29/1608H01L29/2003H01L29/6606H01L29/6609H01L29/66204H01L29/861
    • PROBLEM TO BE SOLVED: To provide a semiconductor device in which the electrical characteristic of a semiconductor element can be improved and the manufacturing yield thereof can be improved.
      SOLUTION: The semiconductor device 1 comprises a substrate 2 which has a rectangle-like flat surface; a first electrode 61 disposed in the center of one surface of the substrate 2 and made of a conductive material harder than the substrate 2; and a second electrode 62 disposed along a least part in the periphery in one surface of the substrate 2 and integrally made of the same conductive material as the first electrode 61, and has a thickness smaller than that of the first electrode 61.
      COPYRIGHT: (C)2009,JPO&INPIT
    • 解决的问题:提供可以提高半导体元件的电特性并提高其制造成品率的半导体器件。 解决方案:半导体器件1包括具有矩形平坦表面的衬底2; 设置在基板2的一个表面的中心并由比基板2硬的导电材料制成的第一电极61; 以及在基板2的一个表面的至少一部分周边设置并与第一电极61相同的导电材料一体制成的第二电极62,其厚度小于第一电极61的厚度。 版权所有(C)2009,JPO&INPIT