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51. 发明专利

JPS61220338A MANUFACTURE OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS61220338A
公开(公告)日：1986-09-30
申请号：JP6149785
申请日：1985-03-26
申请人： TOSHIBA CORP
发明人： MIKATA YUICHI , USAMI TOSHIRO
IPC分类号： H01L21/316
摘要： PURPOSE:To reduce a production density of OSF by a method wherein a semiconductor substrate is oxidized in an oxidizing atmosphere containing oxygen to form a thermal oxide film with a thickness of not less than 40nm and then continually oxidized in another oxidizing atmosphere containing vapor to form a thermal oxide film with a thickness of not less than 100nm. CONSTITUTION:A thermal oxide film with a thickness of not less than 40nm is formed by the oxidization in an oxidizing atmosphere containing oxygen in the initial stage of an oxidizing process. If the thickness of the formed thermal oxide film is less than 40nm, a production density of OSF is not so much different from that obtained by the oxidization in an oxidizing atmosphere containing vapor only. As the atmosphere of the initial stage of the oxidizing process is different from that of the latter stage, the production density of OSF is reduced and the thermal oxide film with the thickness of not less than 100nm can be formed without reducing a through-put so much.

52. 发明专利

JPS61202448A HEAT TREATING JIG 失效
公开(公告)号：JPS61202448A
公开(公告)日：1986-09-08
申请号：JP4390685
申请日：1985-03-06
申请人： TOSHIBA CORP
发明人： SHIRAI HIDEKI , MIKATA YUICHI
IPC分类号： H01L21/205 , H01L21/22 , H01L21/31 , H01L21/67 , H01L21/673 , H01L21/68
摘要： PURPOSE:To improve the productivity of wafer of large diameter without deformation of a composition nor irregularity of thickness of a film by providing means for increasing a pitch between wafers an narrowing a pitch between the wafers at heat treating time in case of inserting or drawing the wafer in a furnace. CONSTITUTION:Two cylindrical guides 13 are provided longitudinally of a board body 11. A plurality of wafer supports 14 are movably provided at the guides 13. The supports 14 are coupled by a glass fiber 15 of stretchable member. Grooves for implanting wafers 16 are formed on the supports 14. When inserting or drawing the wafers 16 in a furnace, the pitch between the wafers 16 is increased, for example, to 2cm. The pitch between the wafers 16 is narrowed, for example, to 4mm while pressing an inserting rod 17 to the depth side at heat treating time. Thus, the productivity is improved.

53. 发明专利

JP2005354089A Semiconductor device 审中-公开
标题翻译：半导体器件
公开(公告)号：JP2005354089A
公开(公告)日：2005-12-22
申请号：JP2005179939
申请日：2005-06-20
申请人： Toshiba Corp , 株式会社東芝
发明人： OKADA TAKAKO , KANBAYASHI SHIGERU , YABUKI SO , ONGA SHINJI , TSUNASHIMA YOSHITAKA , MIKATA YUICHI , OKANO HARUO
IPC分类号： H01L27/04 , H01L21/205 , H01L21/822
摘要： PROBLEM TO BE SOLVED: To provide a single crystal and a polycrystal having proper crystallinity at a low temperature and to provide a semiconductor device having high reliability by using a solid phase growing method. SOLUTION: In order to deposit an amorphous semiconductor thin film on a substrate or an insulating film, particularly, the amorphus semiconductor thin film is formed so that a mean atomic interval distribution of the amorphous film made of a main element constituting the film substantially coincides with that of the single crystal, recrystallization energy is imparted to the amorphous semiconductor thin film, and a solid phase growth is performed to form a single crystal semiconductor thin film 3. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供在低温下具有适当结晶度的单晶和多晶，并通过使用固相生长方法提供具有高可靠性的半导体器件。解决方案：为了在基板或绝缘膜上沉积非晶半导体薄膜，特别地，形成非晶半导体薄膜，使得由构成膜的主要元件制成的非晶膜的平均原子间隔分布基本上与单晶的一致，向非晶半导体薄膜赋予再结晶能，进行固相生长以形成单晶半导体薄膜3.（C）2006，JPO＆NCIPI

54. 发明专利

JP2002270823A SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR 失效
公开(公告)号：JP2002270823A
公开(公告)日：2002-09-20
申请号：JP2001069632
申请日：2001-03-13
申请人： TOSHIBA CORP
发明人： TSUCHIYA NORIHIKO , USHIKU YUKIHIRO , MIKATA YUICHI , KAWASAKI ATSUKO , UMEZAWA KAORI
IPC分类号： H01L29/78
摘要： PROBLEM TO BE SOLVED: To suppress the expansion of dislocation occurred in the activation heat treatment of a heavily-doped region by reducing stress generated at the periphery of a pattern edge part, without performing activation heat treatment for long time at a high temperature. SOLUTION: In the formation of the source/drain region of an MOS transistor having LDD structure, a gate electrode 103 is formed on a P-type silicon substrate 101 via a gate insulating film 102 and ions are injected with the gate electrode 103 as an ion injection mask. Then, an n- low concentration impurity region 106 is formed through heat treatment. A gate electrode side wall 104 adjacent to the gate electrode is formed. Then, n+ heavily-doped region 107 is formed by ion injection with the gate electrode sidewall 104 as the ion injection mask. A source/drain region 108 is formed. A second gate electrode sidewall 105 is formed adjacent to the first gate electrode sidewall 104. Then, the source/ drain region 108 is activated and heat-treated.

55. 发明专利

JP2000018407A PROCESS GAS SUPPLY UNIT 失效
公开(公告)号：JP2000018407A
公开(公告)日：2000-01-18
申请号：JP18706698
申请日：1998-07-02
申请人： CKD CORP , TOSHIBA CORP
发明人： OKUMURA KATSUYA , MIKATA YUICHI , HATTORI KEI , SUDO YOSHIHISA , ITO MINORU , NITTA SHINICHI
IPC分类号： F16K21/00 , F16K31/06
摘要： PROBLEM TO BE SOLVED: To provide a compact, short and cost-reduced mass flow controller system. SOLUTION: An inlet-switching valve is an air-operated proportional valve 15 with a cutoff function. This valve has control valves 35 and 36 to control air pressure supplied to the inlet switching valve and a control means 32 for control valves 35 and 36 to set pressure at an outlet port 21 of the inlet- switching valve to specified values based on output of a pressure sensor 13.

56. 发明专利

JPH11251306A METHOD AND DEVICE FOR FORMING THIN FILM AND SEMICONDUCTOR DEVICE MANUFACTURED BY THIS METHOD 失效
公开(公告)号：JPH11251306A
公开(公告)日：1999-09-17
申请号：JP5216398
申请日：1998-03-04
申请人： TOSHIBA CORP
发明人： MIKATA YUICHI
IPC分类号： H01L21/31 , C23C16/40 , C23C16/44 , C23C16/448 , C23C16/455 , H01L21/205 , H01L21/314 , H01L21/316 , H01L21/8242 , H01L21/8246 , H01L27/105 , H01L27/108
摘要： PROBLEM TO BE SOLVED: To accumulate effectively on a substrate, by a method wherein a resisual region of a raw material gas of a thin film is formed on a surface of a semiconductor substrate, a film formation reaction is caused containing a decomposition of the raw material gas by heating, and a new raw material gas is supplied from a supply source existing inside the residual region. SOLUTION: A wafer 32 is set on a susceptor 36, and an oxygen gas is introduced into a reaction furnace 31 to adjust a pressure and close a cover 33 and make a closed space by the susceptor 36 and the cover 33, so that a flow rate of a mass flow controller 34 is reduced and an inert gas N2 is introduced to hold the current pressure. Next, if the susceptor 36 is heated and a temperature of a wafer in the closed space is raised, a BaSrTi oxide is made gaseous in the closed space, and the gas is filled up and mixed with oxygen and decomposed on the wafer 32 so that a BSTO is accumulated. Thus, as the raw material gas can readily be supplied and the entire closed space becomes a residual space, the raw material gas is all used in the residual region to attain a large film forming speed.

57. 发明专利

JPH11251244A SEMICONDUCTOR DEVICE AND MANUFACTURE OF THE SAME 失效
公开(公告)号：JPH11251244A
公开(公告)日：1999-09-17
申请号：JP35997598
申请日：1998-10-26
申请人： TOSHIBA CORP
发明人： OKADA TAKAKO , KANBAYASHI SHIGERU , YABUKI SO , ONGA SHINJI , TSUNASHIMA YOSHITAKA , MIKATA YUICHI , OKANO HARUO
IPC分类号： H01L21/28 , H01L21/20 , H01L21/336 , H01L21/768 , H01L21/822 , H01L21/8249 , H01L27/04 , H01L27/06 , H01L29/786
摘要： PROBLEM TO BE SOLVED: To provide a single crystal and a polycrystal having good crystallinity at low temperatures, and to provide a semiconductor device of high reliability using a solid phase growth method. SOLUTION: An amorphous thin film 3 is deposited on a substrate 1, so that the average interatomic distance of a principal component element of the thin film becomes not less than 1.02 times the average interatomic distance in a single crystal of the element, and solid phase growth is carried out by providing crystallizing energy to the amorphous thin film 3, thus forming a single crystal 4. In depositing the amorphous semiconductor thin film on the substrate or an insulating film, a thin film is formed so the distribution of average interatomic distance of the amorphous film made of a principal element constituting the thin film substantially coincides with the distribution of average interatomic distance of the single crystal, and solid phase growth is carried out by providing recrystallization energy thereto, thus forming the single crystal semiconductor thin film 3.

58. 发明专利

JPH0917734A GAS SUPPLY EQUIPMENT FOR SEMICONDUCTOR MANUFACTURING EQUIPMENT AND ITS SUPPLY METHOD 失效
公开(公告)号：JPH0917734A
公开(公告)日：1997-01-17
申请号：JP16163295
申请日：1995-06-28
申请人： TOSHIBA CORP
发明人： MIKATA YUICHI
IPC分类号： C23C16/44 , C23C16/455 , C23F4/00 , H01L21/205 , H01L21/302 , H01L21/3065
摘要： PURPOSE: To make it possible to enhance the controllability of treatment and to achieve good controllability for supplying material gas in a short time treatment in a CVD film forming equipment performing the number of sheets treatment. CONSTITUTION: For instance, 100cc of SiH4 gas required for forming the films 100nm thick polysilicon films on a semiconductor substrate 11 is taken out from a gas cylinder 20 and a container 17 is filled up with this gas through a pressure regulating valve 19 and a valve 18. SiH4 gas stored in this container 17 is supplied to a treatment chamber 12 by a opening degree adjusting valve 16. At this time, and opening degree adjuster 22 is controlled by a controller 23 from the output of a pressure gage 21, and the opening degree of the opening degree adjusting valve 16 is controlled so as to make the rate of change in gas press in the container 17 becomes constant within the film forming time.

59. 发明专利

JPH08167599A SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF 失效
公开(公告)号：JPH08167599A
公开(公告)日：1996-06-25
申请号：JP31084194
申请日：1994-12-14
申请人： TOSHIBA MICRO ELECTRONICS , TOSHIBA CORP
发明人： HISATOMI KIYOSHI , ISHIHARA KATSUNORI , MIKATA YUICHI , FUNO SAKAE
IPC分类号： H01L21/28 , H01L21/31 , H01L21/316 , H01L21/318 , H01L21/8247 , H01L29/788 , H01L29/792
摘要： PURPOSE: To enhance the insulating film of a semiconductor device in breakdown strength. CONSTITUTION: A Cl-containing CVD silicon oxide film 20 is formed on a silicon substrate 11, and a polysilicon layer 15 is formed thereon. The CVD silicon oxide film 20 is featured by that it is set more than 1×10 atoms/cm but lower than 2×10 atoms/cm in Cl concentration. As the silicon oxide film 20 is formed on the silicon substrate 11 through a CVD method, BMD contained in the silicon substrate 11 is restrained from diffusing into the silicon oxide film 20, so that the silicon oxide film is prevented from decreasing breakdown strength due to BMD.

60. 发明专利

JPH07326673A SEMICONDUCTOR DEVICE AND ITS MANUFACTURE 失效
公开(公告)号：JPH07326673A
公开(公告)日：1995-12-12
申请号：JP12086494
申请日：1994-06-02
申请人： TOSHIBA CORP , TOSHIBA MICRO CUMPUTER ENG
发明人： ISHIHARA KATSUNORI , MIKATA YUICHI
IPC分类号： H01L23/522 , H01L21/316 , H01L21/768 , H01L21/8242 , H01L27/10 , H01L27/108
摘要： PURPOSE:To reduce generation of dust and obtain flatness for forming a multilayered wiring layer, by forming the interlayer insulating film wherein an SOG film is formed on a first amorphous silicon film, and a second amorphous silicon film containing oxygen and boron elements is formed on the SOG film. CONSTITUTION:As the first layer of an interlayer insulating film 25, an amorphous silicon film 22 to which O and B are added is formed on a wiring layer 21. As the second layer of the interlayer insulating film 25, an SOG film 23 is formed on the surface of the amorphous silicon film 22. As the third layer of the interlayer insulating film 25, an amorphous silicon film 24 to which O and B are added similarly to the first layer is formed on the SOG film 23 surface. A contact hole 26 is formed in the interlayer insulating film 25. A second wiring layer 27 is formed on the whole surface of the interlayer insulating film 25 and buried in the contact hole 26. Thereby generation of dust can be reduced, and flatness for forming a multilayered wiring layer can be obtained.

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