专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明专利

JPS6329954A MANUFACTURE OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS6329954A
公开(公告)日：1988-02-08
申请号：JP17188686
申请日：1986-07-23
申请人： TOSHIBA CORP , TOSHIBA MICRO CUMPUTER ENG
发明人： MIKATA YUICHI , ISHIHARA KATSUNORI
IPC分类号： H01L21/8247 , H01L21/205 , H01L21/3205 , H01L23/52 , H01L29/78 , H01L29/788 , H01L29/792
摘要： PURPOSE:To increase breakdown strength at a time when laminating an insulating film by forming a polycrystalline silicon film onto the insulating film in the main surface of a semiconductor substrate at a specific reaction temperature and bringing the crystal grain size of the polycrystalline silicon film to 100Angstrom or less. CONSTITUTION:When silicon is attached onto an insulating film 52 in a semiconductor substrate 51 at a reaction temperature of 400 deg.C or 600 deg.C, crystallization hardly progresses, and an amorphous silicon film 53 is shaped. The film thickness of the amorphous silicon film 53 is brought to at least 30Angstrom . When the reaction temperature is elevated to 600 deg.C or 800 deg.C and a polycrystalline silicon film 54 is formed, grain size is shaped to 100Angstrom or less. Traps on the grain interface are removed and phosphorus is diffused uniformly when phosphorus is diffused thermally to the polycrystalline silicon film 54, and local sections where field concentration is liable to be generated such as the irregularities of a crystal are also decreased largely in the interface of an insulating film 55 even when laminating the insulating film 55, thus increasing breakdown strength.

2. 发明专利

JPH07297200A SEMICONDUCTOR SILICON WAFER AND ITS MANUFACTURE 失效
公开(公告)号：JPH07297200A
公开(公告)日：1995-11-10
申请号：JP8334594
申请日：1994-04-21
申请人： TOSHIBA CORP , TOSHIBA MICRO CUMPUTER ENG
发明人： KUBOTA ATSUKO , ISHIHARA KATSUNORI
IPC分类号： H01L21/322
摘要： PURPOSE:To provide a semiconductor silicon wafer having a strong gettering effect, in which contaminating particles are hard to adhere to the rear surface and particles are removed easily even when they adhere. CONSTITUTION:A semiconductor silicon wafer is provided with a polycrystalline silicon layer 2, for gettering, which is deposited on a face 1a on the side on which a device is not formed or a silicon substrate 1 and with an amorphous silicon layer 3 which is deposited on a face 2a of the polycrystalline silicon on a side opposite to the silicon substrate 1.

3. 发明专利

JPS6333826A LOW PRESSURE OXIDIZING APPARATUS 失效
公开(公告)号：JPS6333826A
公开(公告)日：1988-02-13
申请号：JP17565286
申请日：1986-07-28
申请人： TOSHIBA CORP , TOSHIBA MICRO CUMPUTER ENG
发明人： MIKATA YUICHI , OGINO MASANOBU , ISHIHARA KATSUNORI
IPC分类号： H01L21/31 , H01L21/316
摘要： PURPOSE:To form a uniform thickness oxide film in a surface with good controllability of the film by performing the thermal oxidation of a semiconductor wafer by feeding O2 gas sufficient for an oxidation under lower pressure than an atmospheric pressure from an O2 gas supplying mechanism with a flow meter into a furnace. CONSTITUTION:Gas sufficient for an oxidation is temporarily transferred to a gas tank 11 with a flow meter in response to the thickness of the film to be oxidized from an O2 gas cylinder 50, a plurality of wafers 51 set on a boat 52 are inserted into a furnace 21, the furnace is closed and with a cover 23. Then, the temperature of the furnace is raised to 1000 deg.C, and the furnace is evacuated by a pump 31 or the like. When the pressure (vacuum degree) in the furnace becomes sufficiently low, dry O2 gas is fed from the talk 11 through an O2 gas inlet tube 12, and the O2 gas pressure is matched to a predetermined value in the furnace by regulating the flow rate. The predetermined pressure is frequently approx. 0.1 atm as a standard. Simultaneously, O2 gas is fed from a gas tank 41 with a flow meter through an organic contaminant preventing O2 gas tube 42 to an exhaust tube 32, and an oxide film is completely formed after a predetermined time is elapsed.

4. 发明专利

JPS63166247A MANUFACTURE OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS63166247A
公开(公告)日：1988-07-09
申请号：JP31557586
申请日：1986-12-26
申请人： TOSHIBA CORP , TOSHIBA MICRO CUMPUTER ENG
发明人： MIKATA YUICHI , ISHIHARA KATSUNORI
IPC分类号： H01L23/52 , H01L21/3205
摘要： PURPOSE:To improve withstand voltage by forming an amorphous silicon film of specific phosphorus concentration on the insulating film of the main surface of a semiconductor substrate, successively to this process, by forming a polycrystalline silicon film of specific phosphorus concentration on the amorphous silicon film, and by forming an insulating film on the polycrystalline silicon film. CONSTITUTION:An insulating film 12 is formed on the surface of a silicon substrate 11. Then, an amorphous silicon film 13 of phosphorus concentration 1X10 cm or less is deposited on the insulating film 12 to a thickness of 30 Angstrom or more with silane gas thermally decomposing and phosphorus diffusing by using a reduced pressure CVD system. Then, successively to this process, a polycrystalline silicon film 14 of phosphorus concentration 1X10 cm or more is laminated on the amorphous silicon film 13 with phosphorus diffusing. Then, the polycrystalline silicon film 14 is thermally oxidized and a thermally oxidized film 15 is formed. Then, a polycrystalline silicon film 16 is deposited on the thermally oxidized film 15 and a capacitor is formed by etching a laminated film. This reduces the crystal grain size of the polycrystalline silicon film 14 and makes a minute film and can improve the withstand voltage of an insulating film which is laminated on an electrode or an electrode wiring composed mainly of polycrystalline silicon.

5. 发明专利

JPS6240738A WAFER CARRIER 失效
公开(公告)号：JPS6240738A
公开(公告)日：1987-02-21
申请号：JP18021685
申请日：1985-08-16
申请人： TOSHIBA CORP , TOSHIBA MICRO CUMPUTER ENG
发明人： MIKATA YUICHI , ISHIHARA KATSUNORI
IPC分类号： H01L21/677 , B65D85/38 , H01L21/67 , H01L21/673
摘要： PURPOSE:To readily transfer a wafer by forming a wafer drop port on a floor of a vessel body, and telescopically providing a slide door for opening and closing the drop port to prevent it from being contaminated. CONSTITUTION:The upper ends of wafer holding grooves 2 communicate with the hole of a vessel body 1, and the lower ends communicate with a wafer drop port 3 opened at the floor of the vessel body 1 corresponding to the grooves 2. The both ends of the port 3 are externally opposed through wall plates 4, 5 formed with the grooves 2. The port 3 has the width of the degree capable of freely inserting a wafer 6 and is formed with a slide plate inserting hole 8 for telescoping a slide plate 7. Recesses 9 are formed at four corners of the edges of the hole of the body 1, and a stationary projection 10 to be engaged with the recess of other wafer carrier is formed on the back surface side of the body 1 corresponding to the recesses 9.

6. 发明专利

JPH07326673A SEMICONDUCTOR DEVICE AND ITS MANUFACTURE 失效
公开(公告)号：JPH07326673A
公开(公告)日：1995-12-12
申请号：JP12086494
申请日：1994-06-02
申请人： TOSHIBA CORP , TOSHIBA MICRO CUMPUTER ENG
发明人： ISHIHARA KATSUNORI , MIKATA YUICHI
IPC分类号： H01L23/522 , H01L21/316 , H01L21/768 , H01L21/8242 , H01L27/10 , H01L27/108
摘要： PURPOSE:To reduce generation of dust and obtain flatness for forming a multilayered wiring layer, by forming the interlayer insulating film wherein an SOG film is formed on a first amorphous silicon film, and a second amorphous silicon film containing oxygen and boron elements is formed on the SOG film. CONSTITUTION:As the first layer of an interlayer insulating film 25, an amorphous silicon film 22 to which O and B are added is formed on a wiring layer 21. As the second layer of the interlayer insulating film 25, an SOG film 23 is formed on the surface of the amorphous silicon film 22. As the third layer of the interlayer insulating film 25, an amorphous silicon film 24 to which O and B are added similarly to the first layer is formed on the SOG film 23 surface. A contact hole 26 is formed in the interlayer insulating film 25. A second wiring layer 27 is formed on the whole surface of the interlayer insulating film 25 and buried in the contact hole 26. Thereby generation of dust can be reduced, and flatness for forming a multilayered wiring layer can be obtained.

7. 发明专利

JPS63255972A MANUFACTURE OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS63255972A
公开(公告)日：1988-10-24
申请号：JP8977387
申请日：1987-04-14
申请人： TOSHIBA CORP , TOSHIBA MICRO CUMPUTER ENG
发明人： MIKATA YUICHI , ISHIHARA KATSUNORI
IPC分类号： H01L21/28 , H01L21/3205 , H01L21/8247 , H01L23/52 , H01L29/423 , H01L29/43 , H01L29/49 , H01L29/78 , H01L29/788 , H01L29/792
摘要： PURPOSE:To improve the breakdown strength of an insulating film by a method wherein a polycrystalline silicon film (in phosphorus concentration exceeding 5X10 cm ) is deposited using a unsingle crystal silicon film wherein the adsorption points of silicon atoms are distributed in high concentration as a primer layer. CONSTITUTION:A unsingle crystal silicon film 53 in phosphorus concentration of zero or not exceeding 5X10 cm is formed at the reaction temperature of 400 deg.C-600 deg.C on the first insulating film 52 on the main surface of a semiconductor substrate 51; successively a polycrystalline silicon film 54 in phosphorus concentration exceeding 5X10 cm is formed on the silicon film 53; and then another polycrystalline silicon film 55 in phosphorus concentration of zero or not exceeding 5X10 cm is formed. Finally, the second insulating film 56 is formed on the silicon film 55. Through these procedures, the diffusion of phosphorus in the insulating film 52 can be reduced to improve the breakdown strength in combination with the film denseness.

8. 发明专利

JPS63255965A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS63255965A
公开(公告)日：1988-10-24
申请号：JP8977287
申请日：1987-04-14
申请人： TOSHIBA CORP , TOSHIBA MICRO CUMPUTER ENG
发明人： MIKATA YUICHI , USAMI TOSHIRO , ISHIHARA KATSUNORI
IPC分类号： H01L21/3205 , H01L21/28 , H01L21/336 , H01L23/52 , H01L29/43 , H01L29/49 , H01L29/78
摘要： PURPOSE:To prevent the deterioration in breakdown strength characteristics of a gate oxide film and the like by a method wherein an unsingle crystal silicon layer is formed into the resistance of 1X10 OMEGA.cm or less using the impurities mixed simultaneously with the deposition of silicon. CONSTITUTION:The resistance of an unsingle crystal silicon layer 54a becomes 1X10 OMEGA.cm or less by the impurities mixed therein simultaneously when silicon is deposited, and the laminated conductive substance 54, consisting of a high melting point metal or its silicide layer 54b formed on said unsingle crystal silicon layer 54a, is used like the gate electrode or the wiring part provided on the main surface of a semiconductor substrate 51. By using the material having the resistance of 1X10 OMEGA.cm or less as the unsingle crystal silicon, the deterioration in breakdown strength of a gate oxide film and the like of low resistance can be suppressed.

9. 发明专利

JPS61284927A METHOD FOR WASHING SEMICONDUCTOR WAFER 失效
公开(公告)号：JPS61284927A
公开(公告)日：1986-12-15
申请号：JP12519885
申请日：1985-06-11
申请人： TOSHIBA CORP , TOSHIBA MICRO CUMPUTER ENG
发明人： TSUCHIYA NORIHIKO , USAMI TOSHIRO , ISHIHARA KATSUNORI
IPC分类号： B08B3/04 , H01L21/304
摘要： PURPOSE:To enable uniform washing effect to be obtained by providing the flow-in and flow-out ports of the washing liquid at the symmetrical positions of a washing vessel, disposing semiconductor wafer surfaces along this direction, and providing a filter in the flow-in port. CONSTITUTION:A plurality of semiconductor wafer surfaces are disposed at a predetermined interval along between a flow-in port 11 and a flow-out port 12 of the washing liquid which are symmetrically formed on a hollow washing vessel 10, the semiconductor wafers 2 are washed with the circulating washing liquid from a filter 13 attached to the flow-in port 11. For instance, the filter 13 is made of Teflon, which is formed by binding fine pipes having a diameter of about 0.2mum. The flow-in port 11 provided with the filter 13 and the flow-out port 12 are connected by means of a pipe, and a pump is provided in the middle of the pipe, which enables the flow velocity to be controlled by the pump pressure as well as causes the washing liquid to be circulated. The fluid after washing is purified through the filter 13, and the washing liquid flows along the surfaces of the semiconductor wafers 2.

10. 发明专利

JPH0521614A MANUFACTURE OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH0521614A
公开(公告)日：1993-01-29
申请号：JP17566791
申请日：1991-07-17
申请人： TOSHIBA CORP , TOSHIBA MICRO ELECTRONICS
发明人： MIKATA YUICHI , ISHIHARA KATSUNORI
IPC分类号： H01L21/20 , H01L21/28 , H01L21/768
摘要： PURPOSE:To improve the efficiency of a semiconductor device by bringing the contact resistance value of each element within a fixed value. CONSTITUTION:In the semiconductor manufacturing method wherein a semiconductor substrate 10 and a wiring layer are brought into contact with each other through the intermediary of the aperture part of an insulating film 103, an amorphous silicon film 106 is formed on the aperture part of the insulating film 103 formed on the semiconductor substrate 101, then, a natural oxide film 102 is reduced in an amorphous silicon film 106 by conducting a heat treatment, and the natural oxide film 102 is removed.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式