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51. 发明专利

JPH01109786A SEMICONDUCTOR LASER ELEMENT 失效
公开(公告)号：JPH01109786A
公开(公告)日：1989-04-26
申请号：JP26767587
申请日：1987-10-22
申请人： SHARP KK
发明人： KONDO MASAFUMI , HAYAKAWA TOSHIRO , SUYAMA NAOHIRO , TAKAHASHI HISATOSHI
IPC分类号： H01S5/00 , H01S5/223 , H01S5/30
摘要： PURPOSE:To obtain a semiconductor laser element with one successive MBE growth by providing a forward mesa section having a plane (n11) A (n>=1) formed on a substrate as an oblique surface, and using a group IV amphoteric element as a dopant for a growing layer to be stacked on an activated layer. CONSTITUTION:A layer 19 doped with a group IV amphoteric element comprises a forward mesa based on a forward mesa 17a with a plane (n11) A (n>=1) formed on a substrate 17 as an oblique surface. On the oblique surface 19a of the forward mesa, where adhesion coefficients of group V elements are small, and therefore, a IV group amphoteric element which normally behaves as a doper for a plane (100) infiltrates into a location of the group V element, whereby a first conduction type region 19b is formed. As a result, the first conduction type region 19b of a second conduction type layer 19 acts as a current constricting region. Further, a laser oscillating region 18a in an activated layer 18 is interposed also widthwise by the layer 19 into which the group V amphoteric element is doped, an index waveguide being formed. According to the constitution, a semiconductor laser element having current constriction and index waveguide mechanisms can easily be obtained by a MBE method.

52. 发明专利

JPH0196980A SEMICONDUCTOR LASER ELEMENT AND MANUFACTURE THEREOF 失效
公开(公告)号：JPH0196980A
公开(公告)日：1989-04-14
申请号：JP25491887
申请日：1987-10-08
申请人： SHARP KK
发明人： TANETANI MOTOTAKA , TAKAHASHI KOUSEI , HAYAKAWA TOSHIRO , MATSUI KANEKI , MATSUMOTO AKIHIRO , HOSOBANE HIROYUKI
IPC分类号： H01S5/00 , H01S5/20 , H01S5/22 , H01S5/32 , H01S5/34 , H01S5/343 , H01S5/40
摘要： PURPOSE:To form a semiconductor laser element having a low threshold current and a small reactive current in high yield by selectively etching a semiconductor layer directly above a fourth layer which becomes a quantum well having thickness of de Broglie wavelength or less of electron wave up to directly above the fourth layer by employing an etching material having etching velocity of the semiconductor layer of 10 times as large as that of the fourth layer. CONSTITUTION:An N-type AlGaAs buffer layer 102, a clad layer 103, an active layer 104, a P-type GaAs etching stop layer 105, a P-type AlGaAS clad layer 105 and a P-type GaAs contact layer 107 are sequentially grown on an N-type GaAs substrate 101, and a mesa 120 is formed to the midway of the layer 106. The layer 106 is selectively etched with buffer solution HF. The layer 105 is not etched with the solution HF. Thus formed semiconductor laser is oscillated 820nm of wavelength in the layer 104, the layer 105 is of an ultrathin layer having 20Angstrom of thickness, its forbidden band width becomes approx. 1.81eV, and it does not absorb an oscillation light at all.

53. 发明专利

JPS63287081A MANUFACTURE OF SEMICONDUCTOR LASER ELEMENT 失效
公开(公告)号：JPS63287081A
公开(公告)日：1988-11-24
申请号：JP12166787
申请日：1987-05-19
申请人： SHARP KK
发明人： TAKAHASHI KOUSEI , SUYAMA NAOHIRO , KONDO MASAFUMI , HAYAKAWA TOSHIRO
IPC分类号： H01S5/00
摘要： PURPOSE:To obtain an element having a low threshold value of current, excellent in temperature characteristics and transient characteristics, having a long life, by providing a substrate with groove parts or projection parts at the intervals equal to the length of a resonator of the element and making each layer grow by a molecular beam epitaxial (MBE) method. CONSTITUTION:One surface of a substrate 1 provided with plurality of groove parts 2 at the intervals L1 equal to the length of a resonator. The surface provided with the grooves 2 is stuck to a substrate holder with In. Then, a clad layer 11, an active layer 12, a clad layer 13 and a cap layer 4 are made to grow by turns on the surface on the opposite side by an MBE method. At this time, the parts of the grooves 2 are filled with In so as to have large thermal conductivity and the growth is performed at a higher temperature than the set substrate temperature. Accordingly, the growth layer of some part of the groove parts 2 becomes thinner than the other parts so as to have a window structure. An element, which cleaves perpendicularly to the grown surface at the central part of these grooves 2, and has a window structure on an end surface together with a high output and a long life, is obtained.

54. 发明专利

JPS63271992A SEMICONDUCTOR LASER ELEMENT 失效
公开(公告)号：JPS63271992A
公开(公告)日：1988-11-09
申请号：JP10561287
申请日：1987-04-28
申请人： SHARP KK
发明人： SUYAMA NAOHIRO , TAKAHASHI KOUSEI , KONDO MASAFUMI , HAYAKAWA TOSHIRO
IPC分类号： H01S5/00 , H01S5/20 , H01S5/34 , H01S5/343
摘要： PURPOSE:To make a clad layer of a semiconductor laser thinner without deterioration of laser characteristics and to improve the productivity and yield by making the structure near the active layer of the semiconductor laser a structure wherein the exudation of light from the active layer to the clad layer is very little. CONSTITUTION:Light guide layers 4, 6 which are made a junction with both adjacent layers are interposed between an active layer 5 and clad layers 3, 7 by gradually changing a mixed crystal ratio in the range between the active layer 5 and the clad layers 3, 7 and the thickness of the clad layers 3, 7 is set 0.5 mum or less. Since the exudation of light to the clad layers 3, 7 is made very little by the graded refractive index distribution type light guide layers 4, 6, the absorption loss by a substrate or a cap layer is very little even if the thickness of the clad layer is made thinner and characteristics are not deteriorated even if the thickness is made 0.5 mum or less. This enables obtaining the improvement of productivity without the deterioration of the characteristics of a laser element and simultaneously, the improvement of the characteristics according to the reduction of the density of detects can also be expected.

55. 发明专利

JPS6343908B2 失效
公开(公告)号：JPS6343908B2
公开(公告)日：1988-09-01
申请号：JP15153782
申请日：1982-08-30
申请人： SHARP KK
发明人： HAYAKAWA TOSHIRO , MYAUCHI NOBUYUKI , SUYAMA NAOHIRO , YANO MORICHIKA
IPC分类号： H01S5/00 , H01S5/16 , H01S5/223 , H01S5/323

56. 发明专利

JPS63169094A SEMICONDUCTOR LASER 失效
公开(公告)号：JPS63169094A
公开(公告)日：1988-07-13
申请号：JP85387
申请日：1987-01-06
申请人： SHARP KK
发明人： SUYAMA NAOHIRO , TAKAHASHI KOUSEI , KONDO MASAFUMI , HAYAKAWA TOSHIRO
IPC分类号： H01S5/00 , H01S5/20
摘要： PURPOSE:To make a reactive current small and attain a low threshold electrification by preparing a prevention measure for diffusion of an electric current through the second clad layer in a ridge guide structure. CONSTITUTION:A ridge guide part 11 is formed by etching from the surface of a cap layer 9 to the second clad layer 8. A diffusion region 10 extending to the first clad layer 3 is formed by using Si as a source of diffusion. At the diffusion region 10, a quantum well of an active layer 4 is destroyed and a mixed crystal having an average composition is formed. Then in the case of the diffusion region where the quantum well is destroyed, its forbidden band is wider than that in the region where the quantum well below the ridge part is maintained and its region 10 functions as a block layer where an electric current flowing in both sides of the ridge part 11 through the clad layer 8 is blocked. As a reactive current extending over the whole plane of a laser chip is lessened, a low threshold electrification is available.

57. 发明专利

JPS63150986A SEMICONDUCTOR LASER 失效
公开(公告)号：JPS63150986A
公开(公告)日：1988-06-23
申请号：JP29817586
申请日：1986-12-15
申请人： SHARP KK
发明人： HAYAKAWA TOSHIRO , SUYAMA NAOHIRO , TAKAHASHI KOUSEI , KONDO MASAFUMI
IPC分类号： H01S5/00 , H01S5/343
摘要： PURPOSE:To obtain a superlattice quantum well laser of high reliability in which a low threshold value is performed by alternately laminating AlXGa1-XAs (X>0) and AlYGa1-YAs (X

58. 发明专利

JPS6343312A SUBSTRATE RETAINING JIG FOR MOLECULAR RAY EPITAXY 失效
公开(公告)号：JPS6343312A
公开(公告)日：1988-02-24
申请号：JP18759586
申请日：1986-08-09
申请人： SHARP KK
发明人： SUYAMA NAOHIRO , HAYAKAWA TOSHIRO , KONDO MASAFUMI , TAKAHASHI HISATOSHI
IPC分类号： H01L21/26 , H01L21/203
摘要： PURPOSE:To obtain a substrate retaining jig for epitaxy which makes a substrate temperature excellently uniform, providing a substrate mountig plate with a containing part with the same thickness as the substrate, a fixing part and a groove surrounding a recessed part. CONSTITUTION:The peripheral part of a planar mounting plate 11 is supported with a retainer 12, and a recessed part 13 for housing a substrate with a depth of the almost same thickness as the substrate is arranged on the surface of the plate 11. The substrate is fixed on the recessed part with pins 15. A groove 14 is formed on the back surface of the mounting plate so as to surround the recessed part 13. In the case of the above constitution, when the back surface of the mounting plate 11 is heated, the heat is conducted to the substrate via the mountig plate 11, and also to the retainer 12. The conduction, however, is decreased by the groove, and the heat is stored in the inside of the groove. Thereby, the temperature distribution of the substrate arranged in the inside of the groove is made uniform.

59. 发明专利

JPS62257783A SEMICONDUCTOR LASER ELEMENT 失效
公开(公告)号：JPS62257783A
公开(公告)日：1987-11-10
申请号：JP10298286
申请日：1986-04-30
申请人： SHARP KK
发明人： SUYAMA NAOHIRO , HAYAKAWA TOSHIRO , TAKAHASHI KOUSEI , KONDO MASAFUMI , YAMAMOTO SABURO
IPC分类号： H01S5/00 , H01S5/22 , H01S5/34 , H01S5/343 , H01S5/40
摘要： PURPOSE:To form a refractive index waveguide mechanism, to remove light absorption, and to enable low threshold-current operation and high output operation while facilitating preparation and mounting by shaping parallel grooves to an indentation section notched to the central section of a polycrystalline layer and forming a mesa-shaped section. CONSTITUTION:Striped parallel narrow grooves 14 are shaped to an indentation section notched at the central section of a polycrystalline layer forming a GaAs- GaAlAs group semiconductor laser element, and mesa-shaped sections 15 functioning as current paths between a second clad layer 10 and a cap layer 11 and limiting a laser oscillation region are shaped among the grooves 14. The semiconductor laser element, which has an index waveguide mechanism by a constitution, in which the mesa-shaped sections are not projected from an electrode 17 for the polycrystalline layer, enables low threshold operation or high output operation because of high heat-dissipating properties and no light absorption and is difficult to be damaged and is easily prepared and mounted, is manufactured.

60. 发明专利

JPS62188295A SEMICONDUCTOR LASER 失效
公开(公告)号：JPS62188295A
公开(公告)日：1987-08-17
申请号：JP3164786
申请日：1986-02-13
申请人： SHARP KK
发明人： HAYAKAWA TOSHIRO , TAKAHASHI KOUSEI , SUYAMA NAOHIRO , KONDO MASAFUMI , YAMAMOTO SABURO
IPC分类号： H01S5/00 , H01S5/343
摘要： PURPOSE:To obtain a visible semiconductor laser having a low threshold value by a method wherein a superlattice quantum well structure, wherein an AlGaAs layer, a GaAs layer and so on, each consisting of a thin layer of 5mol layers or less, are each laminated alternately, is formed into a superlattice quantum well structure in the optimum width by a molecular beam epitaxy (MBE) method and so on. CONSTITUTION:These diagrams are explanatory drawings to illustrate in a typical manner the distribution of an ASl mixed crystal ratio (a) on the section of a single superlattice quantum well structure made for finding the optimum quantum well width (thickness) Lz from the measurement of a photo luminescence, and a superlattice quantum well layer 22 and an Al0.5Ga0.5As barrier layer 23 (thickness =0.15mum) are formed by growth on an Al0.5Ga0.5As barrier layer 21 (thickness =0.5mum) by an MBE method. The structure of the superlattice quantum well layer 22 is a structure, wherein a GaAs layer (thickness; nX1mol layer =nX2.88Angstrom ) and an Al0.5Ga0.5As layer (thickness; nX1mol layer =nX2.83Angstrom ) are each laminated alternately in (m) layers and (m-1) layers, and the total quantum well width Lz is Lz=nX(2m-1)X2.83Angstrom . For a total half-value width (mev) (b), the minimum value in the range of 100Angstrom

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