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41. 发明专利

JP5960826B2 フォトリソグラフィのための光学要素を局所的に変形させる方法及び装置有权
标题翻译：在本地的方法和装置变形用于光刻的光学元件
公开(公告)号：JP5960826B2
公开(公告)日：2016-08-02
申请号：JP2014527809
申请日：2012-08-21
申请人：カールツァイスエスエムエスリミテッド
发明人：ドミトリエフウラジミール , スターンウリ
IPC分类号： G03F7/20 , G03F1/38
CPC分类号： G03F7/70191 , B82Y10/00 , B82Y40/00 , G03F1/72 , G03F7/70025 , G03F1/60 , G03F7/0002

42. 发明专利

JP2014504376A Method and apparatus for correcting errors on the wafer to be processed by the photolithographic mask 有权
公开(公告)号：JP2014504376A
公开(公告)日：2014-02-20
申请号：JP2013543632
申请日：2011-12-02
申请人：カールツァイスエスエムエスゲーエムベーハー , カールツァイスエスエムエスリミテッド
发明人：ディルクバイアー , ウラジミールドミトリエフ , オフィアシャロニ , ナダフワーツマン
IPC分类号： G03F1/72 , G03F1/84 , G03F7/24 , H01L21/027
CPC分类号： G03F1/72 , G03F1/84 , G03F7/70466 , G03F7/70625 , G03F7/70633
摘要：本発明は、少なくとも１つのフォトリソグラフィマスクによって処理されるウェーハ上の少なくとも１つの誤差を補正する方法に関し、本方法は、（ａ）ウェーハ処理サイトにおいてウェーハ上の少なくとも１つの誤差を測定する段階と、（ｂ）少なくとも１つのフォトリソグラフィマスク内に少なくとも１つの局所的持続性修正配列を導入することによって少なくとも１つのフォトリソグラフィマスクを修正する段階とを含む。
【選択図】図６

43. 发明专利

JP5267890B2 Gray-tone mask blank and a method of manufacturing the same, and, gray-tone mask and a method of manufacturing the same 有权
公开(公告)号：JP5267890B2
公开(公告)日：2013-08-21
申请号：JP2010181945
申请日：2010-08-16
申请人： Hoya株式会社
发明人：勝田辺 , 勝三井
IPC分类号： G03F1/00 , G03F1/50 , G03F1/54 , G03F1/58 , H01L21/027
CPC分类号： G03F1/72 , G03F1/60
摘要： There are provided a manufacturing method of a transparent substrate for a mask blank, a mask blank, or an exposure mask adapted to prevent occurrence of a transfer pattern defect or a mask pattern defect, by correcting a recessed defect existing on the surface of the transparent substrate, and a defect correction method of an exposure mask. With respect to an exposure mask having a transparent substrate 1 formed thereon with a mask pattern 2 which becomes a transfer pattern, correction is performed by removing, by the use of a needle-shaped member 4, a peripheral portion of a recessed defect 3 formed on a surface 1a of the substrate, where the mask pattern 2 is not formed, so as to induce a reduction in transmission light quantity which causes a transfer pattern defect, thereby reducing a level difference between the surface of the substrate and the depth of the recessed defect. This correction of the recessed defect is carried out at the stage before forming a mask pattern forming thin film on the transparent substrate. A mask blank and an exposure mask are manufactured by the use of the transparent substrate applied with the correction of the recessed defect.

44. 发明专利

JP2013062294A Euv mask manufacturing method 有权
标题翻译： EUV掩模制造方法
公开(公告)号：JP2013062294A
公开(公告)日：2013-04-04
申请号：JP2011198197
申请日：2011-09-12
申请人： Renesas Electronics Corp , ルネサスエレクトロニクス株式会社
发明人： TANAKA TOSHIHIKO
IPC分类号： H01L21/027 , G03F1/72
CPC分类号： G03F1/24 , G03F1/72 , G03F1/82 , G03F1/84
摘要： PROBLEM TO BE SOLVED: To provide technology which easily manufactures a defect-free EUV mask with a high yield simply.SOLUTION: An EUV mask manufacturing method of the present invention includes the steps of: performing defect inspection after depositing a multilayer film on a substrate; determining whether a defect, if any found by the defect inspection, is a concave detect, a convex defect or a mixture of both, and, if the defect is found to be a mixture of concave and convex defects, determining the relative magnitude of the defects; and, thereafter, depositing an additional multilayer film on top of the multilayer film while changing a deposition method according to the determination result.
摘要翻译：要解决的问题：提供简单地以高产量制造无缺陷的EUV掩模的技术。解决方案：本发明的EUV掩模制造方法包括以下步骤：在将多层膜沉积在基板上之后进行缺陷检查; 确定缺陷是否是缺陷检查发现的缺陷是凹形检测，凸起缺陷或两者的混合，并且如果发现缺陷是凹凸缺陷的混合物，则确定缺陷; 然后，在根据判定结果改变沉积方法的同时，在多层膜的顶部上沉积附加的多层膜。版权所有（C）2013，JPO＆INPIT

45. 发明专利

JP2013055197A Exposure method and exposure mask 审中-公开
标题翻译：曝光方法和曝光掩模
公开(公告)号：JP2013055197A
公开(公告)日：2013-03-21
申请号：JP2011191793
申请日：2011-09-02
申请人： Toshiba Corp , 株式会社東芝
发明人： KAMO TAKASHI
IPC分类号： H01L21/027 , G03F1/22
CPC分类号： G03F1/72 , G03F1/24 , G03F7/2026 , G03F7/70466
摘要： PROBLEM TO BE SOLVED: To provide an exposure method and an exposure mask in which a common defect on a wafer can be made eliminated, even if it is a phase defect of a multilayer film and such and pattern dimensional accuracy is improved, while suppressing as much as possible mask manufacturing cost and increase in time.SOLUTION: The exposure method using a reflective mask comprises the steps of: executing a pattern exposure on a sample by using a first reflective mask A formed with a desired pattern; and executing a correction exposure on the sample by using a second reflective mask B formed with a reflection film pattern 15 at a position corresponding to a defect 13 of the first reflective mask A.
摘要翻译：要解决的问题：为了提供可以消除晶片上的共同缺陷的曝光方法和曝光掩模，即使是多层膜的相位缺陷，并且图案尺寸精度提高，同时尽可能地抑制掩模制造成本和时间增加。解决方案：使用反射掩模的曝光方法包括以下步骤：通过使用形成有所需图案的第一反射掩模A对样本执行图案曝光; 并且通过使用在与第一反射掩模A的缺陷13对应的位置处形成有反射膜图案15的第二反射掩模B对样品执行校正曝光。（C）2013，JPO和INPIT

46. 发明专利

JP2012532342A How to Fix a photomask 审中-公开
公开(公告)号：JP2012532342A
公开(公告)日：2012-12-13
申请号：JP2012517867
申请日：2010-06-29
申请人：ナノインクインコーポレーティッド
发明人：ナビルアムロ , レイモンドサネドリン , サンディープディサワル , ジョセフエス．フラガラ
IPC分类号： G03F1/72 , G03F1/00 , G03F1/32 , H01L21/027
CPC分类号： G03F1/72 , B82Y10/00 , B82Y40/00 , C23C18/06 , C23C18/1204 , C23C18/1254 , C23C18/14 , G03F7/0002
摘要：先の尖ったチップおよびカンチレバーを用いた直接書き込みリソグラフィ印刷による、低温硬化または光硬化を伴う先進フォトマスクのアディティブ修復を提供する。インクから形成された材料の光学特性を調整することができる（たとえば、n値およびk値）。シルセスキオキサンインクを含むゾルゲルインクを使用して、MoSi組成物を形成することができる。修復されたフォトマスクは、通常のフォトマスク洗浄条件下での洗浄に耐性を有する。 AFM機器を使用して、アディティブ修復を行って、高い分解能およびレジストレーションを提供することができる。

47. 发明专利

JP2012216638A Method for correcting mask for euv exposure, and mask for euv exposure 有权
标题翻译：用于修正EUV暴露掩蔽物的方法和用于EUV暴露的掩模
公开(公告)号：JP2012216638A
公开(公告)日：2012-11-08
申请号：JP2011080112
申请日：2011-03-31
申请人： Toppan Printing Co Ltd , 凸版印刷株式会社
发明人： MATTHEW LAMANTIA
IPC分类号： H01L21/027 , G03F1/22 , G03F1/72
CPC分类号： G03F1/22 , B82Y10/00 , B82Y40/00 , G03F1/24 , G03F1/72 , G03F1/74
摘要： PROBLEM TO BE SOLVED: To provide a method for correcting a mask for EUV exposure which can locally improve reflectance of irradiation light of EUV exposure.SOLUTION: The present invention provides a method for correcting a mask for EUV exposure having a Mo/Si multilayer film 20 made of molybdenum and silicon laminated onto a substrate, a protective film 30 formed on the Mo/Si multilayer film, and an absorbent film formed on the protective film. The method identifies a defect position of the Mo/Si multilayer film in an exposed region of the protective film, and radiates light rays narrowed to a diameter equal to or less than the wavelength of EUV exposure light to the area covering the defect position in a planar view to form a plurality of openings 2 having maximum widths equal to or less than the wavelength on the upper surface of the mask for EUV exposure.
摘要翻译：要解决的问题：提供一种用于校正EUV曝光的掩模的方法，其可以局部地提高EUV曝光的照射光的反射率。解决方案：本发明提供一种用于校正用于EUV曝光的掩模的方法，其具有层压在基板上的由钼和硅制成的Mo / Si多层膜20，形成在Mo / Si多层膜上的保护膜30，以及形成在保护膜上的吸收膜。该方法识别出在保护膜的暴露区域中的Mo / Si多层膜的缺陷位置，并且将在EUV曝光光的波长范围内变窄的直径变窄到覆盖缺陷位置的区域的光线平面图形成多个开口2，其具有等于或小于用于EUV曝光的掩模的上表面上的波长的最大宽度。版权所有（C）2013，JPO＆INPIT

48. 发明专利

JP4857010B2 Beam-induced etching 有权
公开(公告)号：JP4857010B2
公开(公告)日：2012-01-18
申请号：JP2006105007
申请日：2006-04-06
申请人：エコールポリテクニクフェデラルドゥローザンヌ
发明人：ザビエル・ムルトン , トリスタン・ブレット , パトリック・ホフマン , ミッシェル・ロッシ
IPC分类号： G03F1/72 , C23F4/00 , H01L21/302
CPC分类号： C23F4/00 , C23F4/02 , G03F1/72 , G03F1/74 , H01J2237/31744
摘要： A method and apparatus for local beam processing using a beam activated gas to etch material are described. Compounds are disclosed that are suitable for beam-induced etching. The invention is particularly suitable for electron beam induced etching of chromium materials on lithography masks. In one embodiment, a polar compound, such as CINO 2 gas, is activated by the electron beam to selectively etch a chromium material on a quartz substrate. By using an electron beam in place of an ion beam, many problems associated with ion beam mask repair, such as staining and riverbedding, are eliminated. Endpoint detection is not critical because the electron beam and gas will not etch significantly the substrate.

49. 发明专利

JP4784931B2 Sample holding mechanism and apparatus for working and observing samples 有权
公开(公告)号：JP4784931B2
公开(公告)日：2011-10-05
申请号：JP2006032146
申请日：2006-02-09
申请人：エスアイアイ・ナノテクノロジー株式会社
发明人：衛岡部 , 昌克荷田
IPC分类号： G01Q30/20 , H01J37/20 , G01N23/225 , G01Q30/02 , G01Q30/08 , G01Q30/18 , H01J37/30 , H01J37/317
CPC分类号： H01J37/20 , G03F1/72 , H01J37/3056 , H01J2237/202 , H01J2237/20292
摘要： A sample working/observing apparatus possesses a sample holding mechanism. The sample holding mechanism possesses a sample holder holding a sample, and a base detachably supporting the sample holder. Between these, there are detachably provided a rotation support part supporting so as to be rotatable, a slide support part supporting so as to be slidable from a rotation center toward an X-direction, and a butting support part supporting so as to be slidable in the X-direction and a Y-direction. In an upper face, there are provided an X-direction positioning pin and a Y-direction positioning pin, which are disposed along the Y-direction and the X-direction from the rotation center, and butt against one side and the other side of the sample.

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