专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

31. 发明专利

JP2003297278A Inspection apparatus and inspection method 审中-公开
标题翻译：检验仪器和检验方法
公开(公告)号：JP2003297278A
公开(公告)日：2003-10-17
申请号：JP2002103200
申请日：2002-04-05
申请人： Ebara Corp , 株式会社荏原製作所
发明人： SATAKE TORU , NOMICHI SHINJI
IPC分类号： G03F1/84 , G03F1/86 , H01J37/06 , H01J37/20 , H01J37/22 , H01J37/28 , H01J37/29 , H01L21/027 , H01L21/66 , G03F1/08
摘要： PROBLEM TO BE SOLVED: To provide an inspection apparatus and an inspection method for making inspection by irradiating a sample with an electron beam, by which image formation is achieved with good quality without need of any complicated optical system, and throughput of inspection can be improved. SOLUTION: The electron beam inspection apparatus 35 is equipped with 2 sources 21a, 21b of electron beam, and 4 electron beams 2A-2D are emitted from each source 21 of electron beam. Pairs of corresponding electron beams from the 2 sources 21a, 21b of electron beam are struck on prescribed positions of a surface of a sample 10, respectively. The electron beams 2A-2D are scanned in corresponding regions 91A-92B in charge on the surface of the sample 10, thereby covering the whole area 90 to be irradiated. An image of electrons from the surface of the sample 10 is formed in a detecting section 14 by a mapping projection section 25. A signal outputted on the basis of this image formation is processed in a image processing section 30. COPYRIGHT: (C)2004,JPO
摘要翻译：要解决的问题：提供一种通过用电子束照射样品进行检查的检查装置和检查方法，通过该检查装置和质量得到的图像形成而不需要任何复杂的光学系统，并且检查的吞吐量可以改进。电子束检查装置35配备有电子束的2个源21a，21b，从电子束的每个源21发射4个电子束2A-2D。来自电子束的2个源21a，21b的相应电子束的对分别在样品10的表面的规定位置上被撞击。电子束2A-2D在样品10的表面上的相应区域91A-92B中被扫描，从而覆盖整个区域90以被照射。通过映射投影部分25在检测部分14中形成来自样品10的表面的电子的图像。基于该图像形成输出的信号在图像处理部分30中被处理。版权所有（ C）2004，JPO

32. 发明专利

JP2003100248A PATTERN INSPECTING DEVICE USING CHARGED PARTICLE BEAM 审中-公开
公开(公告)号：JP2003100248A
公开(公告)日：2003-04-04
申请号：JP2001290508
申请日：2001-09-25
申请人： HITACHI LTD
发明人： OTSUKA MASAYUKI , SHICHIDA YOSHIYUKI , NINOMIYA HIROSHI , ABE KATSUNOBU
IPC分类号： G21K5/04 , G03F1/84 , G03F1/86 , H01J37/18 , H01J37/28 , H01L21/66 , G03F1/08
摘要： PROBLEM TO BE SOLVED: To provide a pattern inspecting device using charged particle beam capable of reducing its errors in detection and work during inspection and capable of precise inspection. SOLUTION: The device stop irradiation of charged particle beam on a sample when the degree of vacuum in the sample chamber where sample is placed falls below a predetermined level. The device also stops application of emission current to the source of charged particles and prevents lowering of degree of vacuum around the source.

33. 发明专利

JP2002367887A Mask and method for pattern transfer, exposure method, semiconductor device and manufacturing method therefor 有权
标题翻译：图案转移掩模和方法，曝光方法，半导体器件及其制造方法
公开(公告)号：JP2002367887A
公开(公告)日：2002-12-20
申请号：JP2001171386
申请日：2001-06-06
申请人： Semiconductor Leading Edge Technologies Inc , 株式会社半導体先端テクノロジーズ
发明人： TAKENAKA HIROSHI
IPC分类号： G03F1/20 , G03F1/44 , G03F1/84 , G03F1/86 , G03F7/20 , G03F9/00 , H01L21/027 , G03F1/16
摘要： PROBLEM TO BE SOLVED: To transfer an exact pattern to a design by correcting distortion in the shape of a mask for pattern transfer.
SOLUTION: A pattern transfer process is for applying a charged particle beam to a mask for pattern transfer with a pattern formed for through holes formed in a substrate to transfer the pattern to the substrate to be processed. Prior to transferring of the pattern using part of the pattern as a measuring pattern, the coordinates of the measuring pattern on the mask for pattern tranfer are measured. The amount of deviation of the measuring pattern from a designed position is calculated from the measured coordinates, and, based on the amount of deviation, the angle of application of the charged particle beam to the mask for pattern transfer is controlled before the pattern is transferred.
COPYRIGHT: (C)2003,JPO
摘要翻译：要解决的问题：通过校正用于图案转印的掩模的形状的变形来将精确图案转移到设计。解决方案：图案转印过程是将带电粒子束施加到用于图案转印的掩模上，其中形成的图案形成在用于形成在基板中的通孔的图案，以将图案转移到待处理的基板。在使用部分图案作为测量图案转印图案之前，测量用于图案转印的掩模上的测量图案的坐标。根据测量的坐标计算测量图案与设计位置的偏差量，并且基于偏差量，在图案转印之前控制带电粒子束到用于图案转印的掩模的施加角度。

34. 发明专利

JP2002169270A MASK INSPECTION APPARATUS AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 失效
公开(公告)号：JP2002169270A
公开(公告)日：2002-06-14
申请号：JP2000368002
申请日：2000-12-04
申请人： NIKON CORP
发明人： NAKASUJI MAMORU
IPC分类号： G01B15/00 , G01N23/04 , G03F1/84 , G03F1/86 , G21K5/04 , H01J37/244 , H01J37/28 , G03F1/16
摘要： PROBLEM TO BE SOLVED: To provide a mask inspection apparatus which has a function to prevent the occurrence of crosstalks with the detector itself and makes exact and rapid inspection. SOLUTION: The electronic beam released from an electron gun 1 forms a crossover in a prescribed place by an electrostatic condenser lens 8. This electron beam is then imaged on a mask 5 to be inspected by an electrostatic objective lens 4. The electron beam is scanned in x- and y-directions by octapole electrostatic deflectors 2 and 3 and the scanning width thereof is d on the mask 5 to be inspected. A quadrupole axis alignment deflector (aligner) is used for the axis alignment of the electron beam. The electron beam passed through the mask is detected by the detector 7. The detector 7 is arranged in a position sufficiently proximate to the mask 5 to be inspected and is provided with a partition 6 and therefore the electron beams from the adjacent inspection regions are no more detected by the detector 7 and the occurrence of the crosstalks is prevented.

35. 发明专利

JP2002008961A INSPECTION METHOD OF MASK FOR ELECTRON BEAM EXPOSURE, AND METHOD FOR ELECTRON BEAM EXPOSURE 失效
公开(公告)号：JP2002008961A
公开(公告)日：2002-01-11
申请号：JP2000183295
申请日：2000-06-19
申请人： NEC CORP
发明人： YAMASHITA HIROSHI
IPC分类号： G03F1/20 , G03F1/84 , G03F1/86 , G03F7/20 , H01J37/317 , H01L21/027 , G03F1/16
摘要： PROBLEM TO BE SOLVED: To provide an inspection method of diffusion membrane mask for electron beam exposure, capable of simply measuring film thickness distribution of membrane area even after the mask is produced. SOLUTION: With the inspection method of the mask for electron beam exposure, having pattern region formed by a prescribed pattern shape with a diffusion region laminated by electron beam diffusion body in the prescribed form on electron beam transparent thin film and membrane region in failures of lamination of the electron beam diffusion body, relative film thickness distribution data is obtained, by scanning electron beam on each irradiation region on a mask to be inspected with a plurality of number of irradiation, detecting penetrating electrons in each irradiation region, and the relative film thickness distribution data of the membrane region in the mask plane, by obtaining the value ITE/α (ITE: cumulative strength of penetrating electron in an irradiated region, α: pattern density in membrane region of the irradiated region) in a plurality of irradiated regions.

36. 发明专利

JP2001203246A MASK INSPECTION METHOD 失效
公开(公告)号：JP2001203246A
公开(公告)日：2001-07-27
申请号：JP2000009446
申请日：2000-01-18
申请人： NEC CORP
发明人： OBINATA HIDEO
IPC分类号： G01N23/08 , G01N21/88 , G01N21/93 , G03F1/84 , G03F1/86 , H01L21/66 , G03F1/16
摘要： PROBLEM TO BE SOLVED: To detect the missing of a mask pattern or a deposit using transmission electrons instead of reflection electrons when inspecting the defect of a scattering-type mask by applying electron beams. SOLUTION: An aperture 10 that can be opened or closed having a number of small apertures 14 that can be opened or closed electrically is installed directly above a scattering-type mask 1 to be examined, a current-measuring device 11 for detecting the current value of electron beams through the mask 1 is installed directly below the scattering-type mask 1, and an aperture ratio that is calculated from mask pattern data being inputted to a computer 22 in advance is compared with the current value of the electron beams, thus detecting the pattern defect of the scattering-type mask 1.

37. 发明专利

JP2001153637A MASK INSPECTION DEVICE AND INSPECTION METHOD THEREOF 失效
公开(公告)号：JP2001153637A
公开(公告)日：2001-06-08
申请号：JP33734199
申请日：1999-11-29
申请人： NEC CORP
发明人： OBINATA HIDEO
IPC分类号： G01B15/04 , G01Q30/00 , G01B15/00 , G01N23/04 , G03F1/84 , G03F1/86 , H01J37/28 , H01L21/66 , G03F1/08
摘要： PROBLEM TO BE SOLVED: To provide a mask inspection device and mask inspection method capable of inspecting a mask with an electron beam exposure device and making the installation of an independent inspection device unnecessary. SOLUTION: In an electron beam exposure device 1 having an electron gun 11 for emitting election beams EB, an irradiating optical system 12 for irradiating electron beams emitted to the mask M, and an image forming optical system 16 for forming an image of the electron beams passed through the mask M on a wafer W, an electron detector 20 that can be mounted/demounted with a loafing mechanism 21 and detecting the electron beams passed through the mask M when mounted, and a computer 30 for inspecting the defects of the mask M based on the electron beans detected with the electron detector 20, are installed in the position directly below the mask M. Independent installation of the mask inspection device is made unnecessary, the facility space in the manufacturing plant of a semiconductor device is reduced, and the cost for the device as a whole for manufacturing the semiconductor device is also reduced.

38. 发明专利

JP2000208395A METHOD AND SYSTEM FOR INSPECTING SUBSTRATE 失效
公开(公告)号：JP2000208395A
公开(公告)日：2000-07-28
申请号：JP561099
申请日：1999-01-12
申请人： TOSHIBA CORP
发明人： NAGAI TAKAMITSU , NAGAHAMA ICHIROTA , YAMAZAKI YUICHIRO , MIYOSHI MOTOSUKE
IPC分类号： H01J37/22 , G01N23/225 , G03F1/84 , G03F1/86 , H01J37/04 , H01L21/027 , H01L21/66 , G03F1/08
摘要： PROBLEM TO BE SOLVED: To provide a system and a method for inspecting a substrate in which a projecting electron beam can be regulated in three directions of X, Y and θ. SOLUTION: A substrate inspection system comprises a cathode stage 1 for moving a cathode 2 in three directions of X, Y and θ and a control section 3 therefor, an electromagnetic coil 7 for turning an electron beam 8 about the beam axis and a control section 18 therefor, a Farady cup 13 and an ammeter 35 for measuring the current value of the electron beam 8, and a correction amount operating circuit 15. Current value of the electron beam 8 is measured for each coordinate by irradiating the Farady cup 13 with the electron beam 8 in a specified region by shifting a sample stage 14. Two-dimensional distribution of the current values exceeding a specified threshold level Is is then calculated and axial shift (X, Y) of the electron beam 8 is calculated based on the center of gravity of the two-dimensional distribution. Subsequently, an axial shift correction amount is fed to the cathode stage control section 3, rotational shift (θ) is calculated based on the inclination of the regression line of the two-dimensional distribution and a rotational shift correction amount is fed to the cathode stage control section 3 and the electromagnetic coil control section 18.

39. 发明专利

JPH11326247A SUBSTRATE-INSPECTION DEVICE AND SUBSTRATE-INSPECTION SYSTEM PROVIDED THEREWITH AND SUBSTRATE-INSPECTION METHOD 失效
公开(公告)号：JPH11326247A
公开(公告)日：1999-11-26
申请号：JP13390598
申请日：1998-05-15
申请人： TOSHIBA CORP
发明人： YAMAZAKI YUICHIRO , MIYOSHI MOTOSUKE
IPC分类号： G01B15/00 , G01N21/95 , G01N23/225 , G01R31/302 , G03F1/84 , G03F1/86 , H01J37/22 , H01J37/28 , H01L21/66 , G03F1/08
摘要： PROBLEM TO BE SOLVED: To accurately detect the potential contrast defect of a sample and to quantitatively measure it. SOLUTION: A substrate-inspecting system 60 emits electron beams 31 to the surface of a semiconductor wafer 11, and expands and projects secondary electrons. reflection electrons, and backscattering electrons being generated therefrom onto the lower surface of an electron beam detection part 61 by a mapping projection means as secondary electron beams 31 for forming images, thus observing and inspecting a semiconductor wafer pattern. In this case, a parallel flat-plate-type energy filter 33 is provided in a mapping projection system, and secondary electron beams are separated, thus separating secondary electrons and taking out secondary electron beams with an energy that is equal to or more than a specific value.

40. 发明专利

JPH09257445A MEASURING METHOD AND SURFACE SHAPE BY USING FOCUSED ION BEAM APPARATUS AND FOCUSED ION BEAM APPARATUS 失效
公开(公告)号：JPH09257445A
公开(公告)日：1997-10-03
申请号：JP6284596
申请日：1996-03-19
申请人： TOSHIBA CORP
发明人： KOMANO HARUKI , NAKAMURA HIROKO
IPC分类号： G01B15/00 , G01B15/08 , G03F1/84 , G03F1/86 , H01L21/027 , H01L21/66 , G03F1/08
摘要： PROBLEM TO BE SOLVED: To provide a method in which the height of a protruding object can be measured by using an FIB apparatus (a focused ion beam apparatus) without tilting a sample and to execute both the height measurement of a shifter convex defect and the detect correction of a photomask by using one FIB apparatus. SOLUTION: A reference face and a measuring point on the surface of a sample 15 are irradiated with a pulsed ion beam. The flying time in which the ion beam reaches the reference face from a prescribed cross section 19 on a flying route and the flying time in which the ion beam reaches the measuring point from the prescribed cross section 19 are measured. The difference between the flying time up to the measuring point and the flying time up to the reference face is found. On the basis of the difference between the flying time and the flying time, a height up to the measuring point from the reference face is found.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式