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31. 发明专利

JP2010100516A Porous carbon material composite, method for producing the same, adsorbent, cosmetic preparation, purifying agent and photocatalyst composite material 有权
标题翻译：多孔碳材料复合材料，其制造方法，吸附剂，化妆品制备，净化剂和光催化复合材料
公开(公告)号：JP2010100516A
公开(公告)日：2010-05-06
申请号：JP2009184350
申请日：2009-08-07
申请人： Sony Corp , ソニー株式会社
发明人： IIDA HIRONORI , TABATA SEIICHIRO , YAMADA SHINICHIRO , NOGUCHI TSUTOMU , YAMANOI SHUN
IPC分类号： C01B31/02 , A61K8/25 , A61K8/31 , A61Q1/00 , B01J20/20 , B01J20/28 , B01J20/32 , C01B31/08
CPC分类号： B01J21/18 , A61K8/19 , A61K8/97 , A61K47/06 , A61K2800/413 , A61K2800/522 , A61K2800/56 , A61L9/01 , A61L9/205 , A61Q19/08 , B01D53/02 , B01D53/885 , B01D2253/102 , B01D2253/306 , B01D2253/311 , B01D2255/1021 , B01D2255/1023 , B01D2255/104 , B01D2255/106 , B01D2255/20761 , B01D2255/702 , B01D2255/802 , B01D2255/9205 , B01D2255/9207 , B01J20/02 , B01J20/0211 , B01J20/0229 , B01J20/0244 , B01J20/06 , B01J20/20 , B01J20/28009 , B01J20/28011 , B01J20/2803 , B01J20/28057 , B01J20/28069 , B01J20/28083 , B01J20/3204 , B01J20/3236 , B01J21/063 , B01J35/004 , B01J35/1014 , B01J35/1038 , B01J37/0203 , B01J2220/485 , B05D1/18 , B05D3/0473 , B05D3/0486 , B05D3/104 , C01B32/00 , C01B32/30 , C02F1/283 , C02F1/288 , C02F2103/007 , C25D3/56 , C25D7/00 , H01B1/04 , H01F1/01 , H01L31/0264 , Y10T428/249969
摘要： PROBLEM TO BE SOLVED: To provide a porous carbon material composite, which is highly functional and composed of a porous carbon material and a functional material. SOLUTION: The porous carbon material composite is composed of (A) a porous carbon material having a silicon (Si) content of not more than 1 wt.% and obtained by using, as a raw material, a plant-derived material having a silicon (Si) content of not less than 5 wt.%, and (B) a functional material adhered to the porous carbon material. The porous carbon material composite has a specific surface area as determined by a nitrogen BET method of not less than 10 m 2 /g and a pore volume as determined by a BJH method and an MP method of not less than 0.1 cm 3 /g. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供高功能性并由多孔碳材料和功能材料组成的多孔碳材料复合材料。解决方案：多孔碳材料复合材料由（A）硅（Si）含量不大于1重量％的多孔碳材料组成，并以植物来源的材料为原料硅（Si）含量为5重量％以上，（B）附着于多孔碳材料的功能材料。多孔碳材料复合体具有通过氮BET法测定的比表面积不小于10m 2 / SP / g，通过BJH法测定的孔体积和MP法不小于大于0.1cm 3 / SP / g。版权所有（C）2010，JPO＆INPIT

32. 发明专利

JP2010010357A Ultraviolet sensor 审中-公开
标题翻译：超声波传感器
公开(公告)号：JP2010010357A
公开(公告)日：2010-01-14
申请号：JP2008167378
申请日：2008-06-26
申请人： Fujikura Ltd , Nippon Light Metal Co Ltd , Tokai Toyo Aluminum Hanbai Kk , 日本軽金属株式会社 , 東海東洋アルミ販売株式会社 , 株式会社フジクラ
发明人： SEKI TAKESHI , KANEDA KEIJI , HIDAKA MASANOBU , OHIRA SHIGEO , ARAI NAOKI
IPC分类号： H01L31/108 , G02B6/42 , H01S3/00
CPC分类号： H01L31/0264 , G02B6/4202 , G02B6/4206 , G02B6/4214 , H01L31/1085
摘要： PROBLEM TO BE SOLVED: To provide an ultraviolet sensor capable of exchanging a lamp in response to an actual wastage time without estimating the exchange time of the lamp by continuously monitoring the lifetime of the ultraviolet lamp, and remotely monitoring without being restricted by the ultraviolet measurement place.
SOLUTION: The ultraviolet sensor comprises one or a plurality of optical fiber cables 3 conducting the ultraviolet beam to a photodetector 2 for detecting the ultraviolet beam, each optical fiber cable 3 has a beam receiving part for receiving the ultraviolet beam, and the photodetector 2 comprises a single crystal 10 of a β-Ga
2 O
3 and electrodes 11, 12 formed on its surface and backside. The ultraviolet sensor enables continuous monitoring.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种能够响应于实际浪费时间而交换灯的紫外线传感器，而不通过连续监测紫外灯的寿命来估计灯的交换时间，并且不受紫外线测量场所。解决方案：紫外线传感器包括一个或多个光纤电缆3，其将紫外光束传导到用于检测紫外线的光电检测器2，每个光纤电缆3具有用于接收紫外线的光束接收部分，光电检测器2包括形成在其表面和背面的电极11,12的β-Ga 2 SB 3 O 3 SB的单晶10。紫外线传感器可连续监测。版权所有（C）2010，JPO＆INPIT

33. 发明专利

JP4296193B2 Optical devices 有权
公开(公告)号：JP4296193B2
公开(公告)日：2009-07-15
申请号：JP2006270003
申请日：2006-09-29
申请人：株式会社東芝
发明人：和重山本 , 達雄清水
IPC分类号： H01L31/10
CPC分类号： H01L31/036 , B82Y20/00 , H01L31/0264 , H01L31/035236

34. 发明专利

JP2009004773A Solid-state photovoltaic device provided with absorption layer based on sulfide compound of antimony and silver or based on sulfide compound of antimony and copper 审中-公开
标题翻译：具有吸收层的固态光伏器件，基于抗硫化物或银或硫化氢反应物和铜的化合物
公开(公告)号：JP2009004773A
公开(公告)日：2009-01-08
申请号：JP2008146499
申请日：2008-06-04
申请人： Aisin Seiki Co Ltd , アイシン精機株式会社
发明人： JACOB ALAIN , CHONE CHRISTOPHE , LARRAMONA GERARDO
IPC分类号： H01L31/04
CPC分类号： H01L31/0264 , Y02B10/12
摘要： PROBLEM TO BE SOLVED: To provide a solid-state photovoltaic device of an interpenetration structure which maintains sufficient photovoltaic performance at a low manufacturing cost and is based on a total of three solid inorganic components (two transparent n-type semiconductors and a transparent p-type semiconductor). SOLUTION: The solid-state photovoltaic device is provided with three inorganic solid materials including a transparent n-type semiconductor compound, a transparent p-type semiconductor compound, and a composition of at least one absorber compound existing as a continuous layer between the transparent n-type semiconductor compound and the transparent p-type semiconductor compound which are not brought into contact with each other, either the transparent n-type semiconductor compound or the transparent p-type semiconductor compound exists as a porous substrate 1 provided with a plurality of pores 1 1 , wherein the inner surface of the plurality of pores 1 1 is entirely covered with a thin continuous absorption layer 2 of the absorber compound, the plurality of pores 1 1 are filled with a cover layer 3 made of the other compound of the transparent p-type semiconductor compound or the transparent n-type semiconductor compound with of a volume ratio larger than at least 10% or more, and the absorber layer 2 includes one compound based on sulfide of antimony and silver or one compound based on sulfide of antimony and copper. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种互穿结构的固态光伏器件，其以低制造成本保持足够的光伏性能，并且基于总共三个固体无机组分（两个透明n型半导体和透明p型半导体）。解决方案：固态光伏器件设置有三种无机固体材料，其包括透明的n型半导体化合物，透明的p型半导体化合物和至少一种作为连续层之间存在的吸收剂化合物的组合物存在透明的n型半导体化合物和透明的p型半导体化合物之间没有接触的透明的n型半导体化合物或透明的p型半导体化合物作为多孔基片1，多个孔1 1 ，其中多个孔1 SB 1的内表面完全被吸收剂化合物的薄的连续吸收层2覆盖，多个孔 1 1 填充有由透明p型半导体化合物的其他化合物或体积比大于le的透明n型半导体化合物制成的覆盖层3 10％以上，吸收层2包含基于锑和银的硫化物的一种化合物或基于锑和铜的硫化物的一种化合物。版权所有（C）2009，JPO＆INPIT

35. 发明专利

JP4159828B2 Diboride single crystal substrate, a semiconductor laser diode and a semiconductor device and methods for their preparation using the same 有权
公开(公告)号：JP4159828B2
公开(公告)日：2008-10-01
申请号：JP2002244895
申请日：2002-08-26
申请人：京セラ株式会社 , 独立行政法人物質・材料研究機構
发明人：智上山 , 茂樹大谷 , 浩天野 , 博之木下 , 弘之松波 , 勇赤崎 , 淳須田
IPC分类号： C30B29/10 , C30B33/00 , H01L21/20 , H01L21/331 , H01L29/04 , H01L29/24 , H01L29/737 , H01L29/93 , H01L31/0264 , H01L31/10 , H01L33/14 , H01L33/32 , H01S5/02 , H01S5/323
CPC分类号： H01L31/0264 , C30B29/10 , C30B33/00 , H01L21/0242 , H01L21/02433 , H01L21/0254 , H01L29/045 , H01L29/24 , H01S5/0213 , H01S5/0218 , H01S5/32341
摘要： Disclosed are a diboride single crystal substrate which has a cleavage plane as same as that of a nitride compound semiconductor and is electrically conductive; a semiconductor laser diode and a semiconductor device using such a substrate and methods of their manufacture wherein the substrate is a single crystal substrate 1 of diboride XB2 (where X is either Zr or Ti) which is facially oriented in a (0001) plane 2 and has a thickness of 0.1 mm or less. The substrate 1 is permitted cleaving and splitting along a (10-10) plane 4 with ease. Using this substrate to form a semiconductor laser diode of a nitride compound, a vertical structure device can be realized. Resonant planes of a semiconductor laser diode with a minimum of loss can be fabricated by splitting the device in a direction parallel to the (10-10) plane. A method of manufacture that eliminates a margin of cutting is also realized.

36. 发明专利

JP2007273945A Photoelectric conversion element, and solid-state imaging element 有权
标题翻译：光电转换元件和固态成像元件
公开(公告)号：JP2007273945A
公开(公告)日：2007-10-18
申请号：JP2006347565
申请日：2006-12-25
申请人： Fujifilm Corp , 富士フイルム株式会社
发明人： YOKOYAMA DAISUKE
IPC分类号： H01L31/10 , H01L27/146
CPC分类号： H01L31/0264 , H01L27/14621 , H01L27/14623 , H01L27/14647 , H01L31/022466 , H01L31/0725 , H01L31/18 , H01L51/4246 , Y02E10/549
摘要： PROBLEM TO BE SOLVED: To prevent dark current in a photoelectric conversion element made of organic material. SOLUTION: The photoelectric conversion element includes a photoelectric conversion part including a pair of electrodes 100 and 102 and a photoelectric conversion layer 101 provided between the pair of electrodes 100 and 102. The photoelectric conversion part is provided with a hole blocking layer 103 which is provided between the electrode 100 and the photoelectric conversion layer 101 and prevents injection of holes to the photoelectric conversion layer 101 from the electrode 100 when voltage is applied to the pair of electrodes 100 and 102, and an electron blocking layer 104 which is provided between the electrode 102 and the photoelectric conversion layer 101 and prevents injection of electrons to the photoelectric conversion layer 101 from the electrode 102 when voltage is applied to the pair of electrodes 100 and 102. The hole blocking layer 103 and the electron blocking layer 104 have larger specific inductive capacity than that of the photoelectric conversion layer 101. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：为了防止由有机材料制成的光电转换元件中的暗电流。光电转换元件包括具有一对电极100和102的光电转换部分和设置在该对电极100和102之间的光电转换层101.光电转换部分设置有空穴阻挡层103 其设置在电极100和光电转换层101之间，并且当电压施加到一对电极100和102时防止从电极100向光电转换层101注入空穴，并且设置电子阻挡层104 在电极102和光电转换层101之间，并且当电压施加到一对电极100和102时，防止从电极102向光电转换层101注入电子。空穴阻挡层103和电子阻挡层104具有具有比光电转换层101更大的比感应电容 PYRIGHT：（C）2008，JPO＆INPIT

37. 发明专利

JP2004356481A Optical device using semiconductor 有权
公开(公告)号：JP2004356481A
公开(公告)日：2004-12-16
申请号：JP2003154107
申请日：2003-05-30
申请人： Takashi Katoda , 隆河東田
发明人： KATODA TAKASHI
IPC分类号： H01L21/365 , H01L31/0264 , H01L31/04 , H01L31/10 , H01L33/12 , H01L33/26 , H01S5/32 , H01S5/327 , H01L33/00
CPC分类号： H01L33/26 , H01L31/0264 , H01S5/32 , H01S5/327
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device capable of functioning to radiate or absorb short wavelength light. SOLUTION: High purity molybdenum oxide is used for a light emitting area or an absorption area of a semiconductor optical device. Hereby, an inexpensive optical device capable of radiating or absorbing light in a deep ultraviolet wavelength region is realized. COPYRIGHT: (C)2005,JPO&NCIPI

38. 发明专利

JP2017204510A 光電変換装置の製造方法审中-公开
公开(公告)号：JP2017204510A
公开(公告)日：2017-11-16
申请号：JP2016094171
申请日：2016-05-09
申请人：キヤノン株式会社
发明人：桑原英司 , 浮ケ谷信貴
IPC分类号： H01L21/02 , H01L21/768 , H01L23/522 , H01L21/3205 , H04N5/369 , H01L27/14
CPC分类号： H01L21/02365 , H01L21/02491 , H01L27/14627 , H01L27/14629 , H01L27/14643 , H01L27/1469 , H01L31/0264 , H01L31/04 , H01L31/18 , H01L31/20 , H01L27/14621 , H01L27/14634 , Y02E10/50
摘要：【課題】光電変換装置の性能を向上する【解決手段】光電変換素子が設けられた半導体層を含む第1基板を、第2基板に固定する工程と、第2基板に固定された第1基板を、第1基板に対して第2基板の側とは反対側から薄化する工程と、薄化された第1基板を、半導体素子が設けられた第3基板が第1基板に対して第2基板の側とは反対側に位置するように、第3基板に固定する工程と、第1基板を第3基板に固定する工程の後に、第2基板を除去する工程と、を備える。【選択図】図1

39. 发明专利

JP6206855B2 半導体素子及び太陽電池有权
公开(公告)号：JP6206855B2
公开(公告)日：2017-10-04
申请号：JP2016028098
申请日：2016-02-17
申请人：旭化成株式会社 , 国立大学法人東北大学
发明人：渡辺明 , 湯本徹
IPC分类号： H01L31/072 , H01L31/18 , H01L21/208 , H01L21/368 , H01L31/068
CPC分类号： H01L31/0264 , H01L31/022425 , H01L31/032 , H01L31/0392 , H01L31/03923 , H01L31/03925 , H01L31/03926 , H01L31/072 , H01L31/074 , H01L31/0749 , H01L31/18 , H01L31/1804 , Y02E10/541 , Y02E10/547 , Y02P70/521

40. 发明专利

JPWO2015146055A1 ポリマーとそれを用いた太陽電池有权
公开(公告)号：JPWO2015146055A1
公开(公告)日：2017-04-13
申请号：JP2016509986
申请日：2015-03-13
申请人：株式会社東芝
发明人：中野　義彦 , 義彦中野 , 茂彦森 , 茂彦森 , 五反田　武志 , 武志五反田 , 相賀　史彦 , 史彦相賀 , 留美子早瀬 , 留美子早瀬
IPC分类号： C08G61/12 , H01L51/44 , H01L51/46
CPC分类号： H01L51/0036 , C08G61/126 , C08G2261/124 , C08G2261/1412 , C08G2261/146 , C08G2261/149 , C08G2261/18 , C08G2261/228 , C08G2261/312 , C08G2261/3223 , C08G2261/3243 , C08G2261/3244 , C08G2261/3246 , C08G2261/344 , C08G2261/91 , C08K3/045 , C08L65/00 , C08L75/04 , H01L31/0264 , H01L31/0324 , H01L51/0037 , H01L51/0043 , H01L51/0047 , H01L51/0053 , H01L51/0077 , H01L51/0093 , H01L51/0094 , H01L51/4253 , H01L2031/0344 , Y02E10/549 , C08K3/04
摘要：実施形態のポリマーは、下記に示す2価基を含む繰り返し単位を備える。式(1)において、R1は水素、置換又は非置換のアルキル基、置換又は非置換のアルカノイル基、置換又は非置換のアリール基、及び置換又は非置換のヘテロアリール基から選ばれる1価基である。Xは、酸素、硫黄、及びセレンから選ばれる原子である。Y及びZは、それぞれ独立に、カルボニル基、スルフィニル基、及びスルホニル基から選ばれる2価基である。ただし、Y及びZが共にカルボニル基である場合を除く。【化42】

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