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1. 发明专利

JP2012009910A Solid-state image pickup device 审中-公开
标题翻译：固态图像拾取器件
公开(公告)号：JP2012009910A
公开(公告)日：2012-01-12
申请号：JP2011227162
申请日：2011-10-14
申请人： Fujifilm Corp , 富士フイルム株式会社
发明人： YOKOYAMA DAISUKE
IPC分类号： H01L31/10
摘要： PROBLEM TO BE SOLVED: To provide a solid-state image pickup device having a photoelectric conversion element whose device characteristic is little deteriorated when an electrode film is formed.SOLUTION: A photoelectric conversion element 100 has a photoelectric converter including a first electrode 11, a second electrode 13 confronting the first electrode 11 and a photoelectric conversion layer 12 formed between the first electrode 11 and the second electrode 13. A smoothing layer 104 for moderating unevenness of the surface of the photoelectric conversion layer 12 is formed between the second electrode 13 and the photoelectric conversion layer 12. The smoothing layer 104 is a transparent layer formed of organic amorphous material, and the average roughness Ra of the surface thereof is set to 1 nm or less, and the thickness thereof is set to 30 to 300 nm. Furthermore, the second electrode serves as a light incident side electrode, the first electrode 11 serves as a hole pickup electrode and the second electrode 13 serves as an electron pickup electrode.
摘要翻译：要解决的问题：提供一种具有光电转换元件的固态图像拾取器件，其在形成电极膜时器件特性几乎不劣化。解决方案：光电转换元件100具有光电转换器，其包括第一电极11，面对第一电极11的第二电极13和形成在第一电极11和第二电极13之间的光电转换层12.平滑层在第二电极13和光电转换层12之间形成光电转换层12的表面的缓和不均匀的光盘104。平滑层104是由有机非晶材料形成的透明层，其表面的平均粗糙度Ra 设定为1nm以下，其厚度设定为30〜300nm。此外，第二电极用作光入射侧电极，第一电极11用作空穴拾取电极，第二电极13用作电子拾取电极。版权所有（C）2012，JPO＆INPIT

2. 发明专利

JP2007273894A Photoelectric conversion element, imaging element, and method of manufacturing imaging element 审中-公开
标题翻译：光电转换元件，成像元件和制造成像元件的方法
公开(公告)号：JP2007273894A
公开(公告)日：2007-10-18
申请号：JP2006100627
申请日：2006-03-31
申请人： Fujifilm Corp , 富士フイルム株式会社
发明人： YOKOYAMA DAISUKE
IPC分类号： H01L31/10 , H01L27/146
CPC分类号： H01L31/09 , H01L27/14621 , H01L27/14627 , H01L27/14643 , H01L27/14667 , H01L27/148 , H01L27/305 , H01L27/307 , H01L31/0216 , H01L31/022466 , H01L31/0232 , H01L51/0059 , H01L51/424
摘要： PROBLEM TO BE SOLVED: To provide a photoelectric conversion element which can improve optical absorption rate without thickening a photoelectric conversion layer. SOLUTION: The photoelectric conversion element 100 is provided with a lower electrode 2, an upper electrode 4 opposite to the lower electrode 2 and a photoelectric conversion layer 3 formed between the lower electrode 2 and the upper electrode 4, and it applies bias voltage to between the lower electrode 2 and the upper electrode 4 and picks up photocurrent. In this case, the upper electrode 4 is an electrode on the light entry side, the upper electrode 4 is a transparent electrode, and the lower electrode 2 is a metal electrode to reflect light. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种可以在不使光电转换层增厚的情况下提高光吸收率的光电转换元件。解决方案：光电转换元件100设置有下电极2，与下电极2相对的上电极4和形成在下电极2和上电极4之间的光电转换层3，并且其施加偏压电压到下电极2和上电极4之间并且拾取光电流。在这种情况下，上电极4是光入射侧的电极，上电极4是透明电极，下电极2是反射光的金属电极。版权所有（C）2008，JPO＆INPIT

3. 发明专利

JP2012160770A Solid-state imaging element 审中-公开
标题翻译：固态成像元件
公开(公告)号：JP2012160770A
公开(公告)日：2012-08-23
申请号：JP2012124590
申请日：2012-05-31
申请人： Fujifilm Corp , 富士フイルム株式会社
发明人： YOKOYAMA DAISUKE
IPC分类号： H01L31/10
摘要： PROBLEM TO BE SOLVED: To provide a solid-state imaging element including a photoelectric conversion element made of an organic material, capable of preventing a dark current.SOLUTION: In a semiconductor substrate 1 below a photoelectric conversion part including a pair of electrodes 11 and 13 and a photoelectric conversion layer 12a arranged between the pair of electrodes 11 and 13 and absorbing green light, a blue-color photodiode having a pn-junction surface formed at a position where blue light can be absorbed, and a red-color photodiode having the pn-junction surface at a position where red light can be absorbed, are formed. A relative dielectric constant of a blocking layer 12b provided between the electrode 13 and the photoelectric conversion layer 12a is larger than that of the photoelectric conversion layer 12a. A value obtained by dividing a thickness of the photoelectric conversion layer 12a by the relative dielectric constant is larger than a value obtained by dividing a thickness of the blocking layer 12b by the relative dielectric constant.
摘要翻译：解决的问题：提供一种固态成像元件，其包括能够防止暗电流的由有机材料制成的光电转换元件。解决方案：在包括一对电极11和13的光电转换部件和布置在一对电极11和13之间并吸收绿光的光电转换层12a的半导体基板1中，具有形成在可以吸收蓝光的位置处的pn结表面，以及在可以吸收红色光的位置处具有pn结表面的红色光电二极管。设置在电极13和光电转换层12a之间的阻挡层12b的相对介电常数大于光电转换层12a的相对介电常数。通过将光电转换层12a的厚度除以相对介电常数而获得的值大于通过将阻挡层12b的厚度除以相对介电常数而获得的值。版权所有（C）2012，JPO＆INPIT

4. 发明专利

JP2007080936A Photoelectric conversion element and solid state imaging element 审中-公开
标题翻译：光电转换元件和固态成像元件
公开(公告)号：JP2007080936A
公开(公告)日：2007-03-29
申请号：JP2005263670
申请日：2005-09-12
申请人： Fujifilm Corp , 富士フイルム株式会社
发明人： YOKOYAMA DAISUKE , ARAKI YASUSHI
IPC分类号： H01L27/146
摘要： PROBLEM TO BE SOLVED: To provide a photoelectric conversion element capable of preventing sensitivity deterioration and broadening of spectral sensitivity. SOLUTION: The photoelectric conversion element has a photoelectric converter composed of a first electrode film 11, a second electrode film 13 facing the first electrode film 11, and a photoelectric conversion layer 12 including a photoelectric conversion film disposed between the first electrode film 11 and the second electrode film 13. Light is incident on the photoelectric conversion film from above the second electrode film 13, the photoelectric conversion film produces electrons and holes in response to the incident light from above the second electrode film 13, mobility of the hole is smaller than that of the electron, and the vicinity of the second electrode film 13 produces more electrons and holes than the vicinity of the first electrode film 11 to permit the second electrode film 13 to be used as an electrode to take out electrons. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供能够防止灵敏度劣化和光谱灵敏度变宽的光电转换元件。解决方案：光电转换元件具有由第一电极膜11，与第一电极膜11相对的第二电极膜13和光电转换层12构成的光电转换器，该光电转换层12包括设置在第一电极膜11之间的光电转换膜 11和第二电极膜13.光从第二电极膜13的上方入射到光电转换膜上，光电转换膜响应于来自第二电极膜13上方的入射光而产生电子和空穴，孔的迁移率小于电子，并且第二电极膜13的附近产生比第一电极膜11附近更多的电子和空穴，以允许第二电极膜13用作电极以取出电子。版权所有（C）2007，JPO＆INPIT

5. 发明专利

JP2008166539A Method of manufacturing photoelectric conversion element, photoelectric conversion element and solid-state image sensor 有权
标题翻译：光电转换元件，光电转换元件和固态图像传感器的制造方法
公开(公告)号：JP2008166539A
公开(公告)日：2008-07-17
申请号：JP2006355183
申请日：2006-12-28
申请人： Fujifilm Corp , 富士フイルム株式会社
发明人： YOKOYAMA DAISUKE , MAEHARA YOSHINORI , GOTO TAKASHI
IPC分类号： H01L31/10 , H01L27/146
摘要： PROBLEM TO BE SOLVED: To provide a method of manufacturing a photoelectric conversion element of less dark current. SOLUTION: The method has a lower electrode formation step of forming a lower electrode 101 on a substrate, an organic photoelectric conversion layer formation step of forming an organic photoelectric conversion layer 102 on the lower electrode 101, a hole blocking layer formation step of forming a hole blocking layer 103 consisting of a metal oxide body on the organic photoelectric conversion layer 102 and an upper electrode formation step of forming an upper electrode 104 on the hole blocking layer 103. The blocking layer formation step consists of a deposition step of depositing a metal material on the organic photoelectric conversion layer 102 and an oxidation step of oxidizing the metal material which is subjected to deposition in the deposition step. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种制造具有较小暗电流的光电转换元件的方法。解决方案：该方法具有在基板上形成下电极101的下电极形成步骤，在下电极101上形成有机光电转换层102的有机光电转换层形成步骤，空穴阻挡层形成步骤在有机光电转换层102上形成由金属氧化物本体构成的空穴阻挡层103和在空穴阻挡层103上形成上部电极104的上部电极形成工序。阻挡层形成工序由以下工序构成：在有机光电转换层102上沉积金属材料和在沉积步骤中氧化经过沉积的金属材料的氧化步骤。版权所有（C）2008，JPO＆INPIT

6. 发明专利

JP2007234650A Photoelectric conversion element and solid-state imaging element 审中-公开
标题翻译：光电转换元件和固态成像元件
公开(公告)号：JP2007234650A
公开(公告)日：2007-09-13
申请号：JP2006050839
申请日：2006-02-27
申请人： Fujifilm Corp , 富士フイルム株式会社
发明人： HIOKI TAKANORI , KITAMURA SATORU , MITSUI TETSURO , YOKOYAMA DAISUKE
IPC分类号： H01L27/146 , H01L31/10
摘要： PROBLEM TO BE SOLVED: To provide a photoelectric conversion element capable of preventing a decrease in sensitivity and the broadening of spectral sensitivity. SOLUTION: The photoelectric conversion element includes a photoelectric converter comprising a first electrode film 11; a second electrode film 13 that opposes the first one 11; and a photoelectric conversion layer 12 that contains a hole-transporting photoelectric conversion material and an electron-transporting photoelectric conversion material arranged between the first and second electrode films 11, 13, and contains a photoelectric conversion film where the difference in the maximum wavelengths and/or the difference in the long wavelength edges of the light absorption is not more than 50 nm between the hole-transporting photoelectric conversion material and the electron-transporting photoelectric conversion material. In this case, light enters from the upper part of the second electrode film 13 to the photoelectric conversion film. The photoelectric conversion film generates electrons and holes according to incident light from the upper part of the second electrode film 13, has characteristics where the mobility of electrons is smaller than that of holes, and generates more electrons and holes closer to the second electrode film 13 than closer to the first electrode film 11. The first electrode film 11 is set to be an electrode for taking out holes. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供能够防止灵敏度降低和光谱灵敏度变宽的光电转换元件。光电转换元件包括：光电转换器，包括第一电极膜11; 与第一电极膜对置的第二电极膜13; 以及包含配置在第一和第二电极膜11,13之间的空穴传输光电转换材料和电子传输光电转换材料的光电转换层12，并且包含光电转换膜，其中最大波长和/ 或者在空穴传输光电转换材料和电子传输光电转换材料之间的光吸收的长波长边缘的差不超过50nm。在这种情况下，光从第二电极膜13的上部进入光电转换膜。光电转换膜根据来自第二电极膜13的上部的入射光产生电子和空穴，具有电子迁移率小于空穴的特性，并且产生更靠近第二电极膜13的电子和空穴比第一电极膜11更靠近。第一电极膜11被设定为用于取出孔的电极。版权所有（C）2007，JPO＆INPIT

7. 发明专利

JP2007227574A Photoelectric conversion element, and solid-state imaging element 审中-公开
标题翻译：光电转换元件和固态成像元件
公开(公告)号：JP2007227574A
公开(公告)日：2007-09-06
申请号：JP2006045955
申请日：2006-02-22
申请人： Fujifilm Corp , 富士フイルム株式会社
发明人： YOKOYAMA DAISUKE
IPC分类号： H01L31/10 , H01L27/146
CPC分类号： H01L27/14647 , H01L27/14601 , H01L27/14621 , H01L27/14623 , H01L27/14683 , H01L27/148 , H01L31/03046 , H01L51/42
摘要： PROBLEM TO BE SOLVED: To provide a photoelectric conversion element which hardly causes a deterioration in element characteristics when an electrode is deposited. SOLUTION: The photoelectric conversion element 100 is equipped with a photoelectric conversion unit which includes a first electrode 11, a second electrode 13 facing toward the first electrode 11, and a photoelectric conversion layer 12 formed between the first electrode 11 and second electrode 13. A smoothing layer 104 is provided between the first electrode 11 or the second electrode 13 and the photoelectric conversion layer 12, so as to make the rugged surface of the photoelectric conversion layer 12 smooth. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供一种当沉积电极时几乎不引起元件特性劣化的光电转换元件。光电转换元件100配备有光电转换单元，该光电转换单元包括第一电极11，与第一电极11相对的第二电极13和形成在第一电极11和第二电极11之间的光电转换层12 平滑层104设置在第一电极11或第二电极13与光电转换层12之间，以使光电转换层12的凹凸表面光滑。版权所有（C）2007，JPO＆INPIT

8. 发明专利

JP2007123707A Photoelectric conversion element, imaging element, and method for applying electrical field thereto 有权
标题翻译：光电转换元件，成像元件和应用电场的方法
公开(公告)号：JP2007123707A
公开(公告)日：2007-05-17
申请号：JP2005316524
申请日：2005-10-31
申请人： Fujifilm Corp , 富士フイルム株式会社
发明人： OZAKA ITARU , YOKOYAMA DAISUKE
IPC分类号： H01L27/146 , H01L31/10
摘要： PROBLEM TO BE SOLVED: To provide a photoconductive film having high photoelectric conversion efficiency, a photoelectric conversion element, and an imaging element (preferably, a color image sensor). SOLUTION: A photoelectric conversion element has an organic semiconductor pn junction which contains at least one of fullerene or fullerene derivative and disposed between a pair of electrodes, and an imaging element uses the photoelectric conversion element. A method for applying an electric field to the electrodes, and a field-applied imaging element are disclosed. The photoelectric conversion element has spectral characteristics. A color imaging element is made up of the laminated photoelectric conversion elements corresponding to blue, red, and green respectively. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供具有高光电转换效率的光电导膜，光电转换元件和成像元件（优选为彩色图像传感器）。解决方案：光电转换元件具有包含富勒烯或富勒烯衍生物中的至少一种并且设置在一对电极之间的有机半导体pn结，并且成像元件使用光电转换元件。公开了一种向电极施加电场的方法和场施加的成像元件。光电转换元件具有光谱特性。彩色成像元件分别对应于蓝色，红色和绿色的层叠光电转换元件。版权所有（C）2007，JPO＆INPIT

9. 发明专利

JP2007067194A Organic photoelectric conversion device and stacked photoelectric conversion device 审中-公开
标题翻译：有机光电转换装置和堆叠光电转换装置
公开(公告)号：JP2007067194A
公开(公告)日：2007-03-15
申请号：JP2005251745
申请日：2005-08-31
申请人： Fujifilm Corp , 富士フイルム株式会社
发明人： YOKOYAMA DAISUKE
IPC分类号： H01L31/00 , H01L27/146
CPC分类号： H01L27/307 , H01L51/424 , H01L51/442 , H01L2251/305 , Y02E10/549
摘要： PROBLEM TO BE SOLVED: To provide a stacked color photoelectric conversion device with a small false color and a small shading which has a low noise and a high sensitivity and excels in a color separation by making it possible to obtain an organic photoelectric conversion device with a small dark current, even if a clear electrode with a high optical transparency such as a metal oxide system or the like is used, and moreover by laminating a layer of the organic photoelectric conversion device having such a property on different organic photoelectric conversion device layers or other photoelectric conversion device layers. SOLUTION: The organic photoelectric conversion device is constituted by laminating a lower electrode, an organic layer, and an upper electrode in order. An electrode at a side for collecting an electron consists of the clear electrode, and a work function thereof must be 4.5 eV or less. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：为了提供具有小的假色和小的阴影的层叠彩色光电转换装置，其具有低噪声和高灵敏度，并且通过使得可以获得有机光电转换成为可能，具有小的暗电流的装置，即使使用诸如金属氧化物系统等的具有高光学透明度的透明电极，并且还通过在不同的有机光电转换上层叠具有这种性质的有机光电转换装置的层器件层或其他光电转换器件层。解决方案：有机光电转换装置依次层叠下电极，有机层和上电极。用于收集电子的一侧的电极由透明电极构成，其功函数必须为4.5eV以下。版权所有（C）2007，JPO＆INPIT

10. 发明专利

JP2012023400A Photoelectric conversion element and solid state imaging device 审中-公开
标题翻译：光电转换元件和固态成像装置
公开(公告)号：JP2012023400A
公开(公告)日：2012-02-02
申请号：JP2011229776
申请日：2011-10-19
申请人： Fujifilm Corp , 富士フイルム株式会社
发明人： YOKOYAMA DAISUKE
IPC分类号： H01L31/10 , H01L27/146
摘要： PROBLEM TO BE SOLVED: To provide a photoelectric conversion element which can improve an optical absorption rate without thickening a photoelectric conversion layer.SOLUTION: A photoelectric conversion element 100 is provided with a lower electrode 2, an upper electrode 4 opposite to the lower electrode 2 and a photoelectric conversion layer 3 formed between the lower electrode 2 and the upper electrode 4, and the photoelectric conversion element 100 applies bias voltage to between the lower electrode 2 and the upper electrode 4 and picks up photocurrent. In this case, the upper electrode 4 is an electrode on a light entry side, the upper electrode 4 is a transparent electrode, and the lower electrode 2 is a metal electrode having a function of reflecting light.
摘要翻译：解决的问题：提供一种能够提高光吸收率而不使光电转换层增厚的光电转换元件。解决方案：光电转换元件100设置有下电极2，与下电极2相对的上电极4和形成在下电极2和上电极4之间的光电转换层3，并且光电转换元件100将偏置电压施加到下电极2和上电极4之间并拾取光电流。在这种情况下，上电极4是光入射侧的电极，上电极4是透明电极，下电极2是具有反射光功能的金属电极。版权所有（C）2012，JPO＆INPIT

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