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1. 发明专利

JP2009004773A Solid-state photovoltaic device provided with absorption layer based on sulfide compound of antimony and silver or based on sulfide compound of antimony and copper 审中-公开
标题翻译：具有吸收层的固态光伏器件，基于抗硫化物或银或硫化氢反应物和铜的化合物
公开(公告)号：JP2009004773A
公开(公告)日：2009-01-08
申请号：JP2008146499
申请日：2008-06-04
申请人： Aisin Seiki Co Ltd , アイシン精機株式会社
发明人： JACOB ALAIN , CHONE CHRISTOPHE , LARRAMONA GERARDO
IPC分类号： H01L31/04
CPC分类号： H01L31/0264 , Y02B10/12
摘要： PROBLEM TO BE SOLVED: To provide a solid-state photovoltaic device of an interpenetration structure which maintains sufficient photovoltaic performance at a low manufacturing cost and is based on a total of three solid inorganic components (two transparent n-type semiconductors and a transparent p-type semiconductor). SOLUTION: The solid-state photovoltaic device is provided with three inorganic solid materials including a transparent n-type semiconductor compound, a transparent p-type semiconductor compound, and a composition of at least one absorber compound existing as a continuous layer between the transparent n-type semiconductor compound and the transparent p-type semiconductor compound which are not brought into contact with each other, either the transparent n-type semiconductor compound or the transparent p-type semiconductor compound exists as a porous substrate 1 provided with a plurality of pores 1 1 , wherein the inner surface of the plurality of pores 1 1 is entirely covered with a thin continuous absorption layer 2 of the absorber compound, the plurality of pores 1 1 are filled with a cover layer 3 made of the other compound of the transparent p-type semiconductor compound or the transparent n-type semiconductor compound with of a volume ratio larger than at least 10% or more, and the absorber layer 2 includes one compound based on sulfide of antimony and silver or one compound based on sulfide of antimony and copper. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种互穿结构的固态光伏器件，其以低制造成本保持足够的光伏性能，并且基于总共三个固体无机组分（两个透明n型半导体和透明p型半导体）。解决方案：固态光伏器件设置有三种无机固体材料，其包括透明的n型半导体化合物，透明的p型半导体化合物和至少一种作为连续层之间存在的吸收剂化合物的组合物存在透明的n型半导体化合物和透明的p型半导体化合物之间没有接触的透明的n型半导体化合物或透明的p型半导体化合物作为多孔基片1，多个孔1 1 ，其中多个孔1 SB 1的内表面完全被吸收剂化合物的薄的连续吸收层2覆盖，多个孔 1 1 填充有由透明p型半导体化合物的其他化合物或体积比大于le的透明n型半导体化合物制成的覆盖层3 10％以上，吸收层2包含基于锑和银的硫化物的一种化合物或基于锑和铜的硫化物的一种化合物。版权所有（C）2009，JPO＆INPIT

2. 发明专利

JP2011139046A Inorganic photovoltaic cell 有权
标题翻译：无机光伏电池
公开(公告)号：JP2011139046A
公开(公告)日：2011-07-14
申请号：JP2010264780
申请日：2010-11-29
申请人： Aisin Seiki Co Ltd , アイシン精機株式会社
发明人： NEZU SHINJI , MOISAN CAMILLE , CHONE CHRISTOPHE , JACOB ALAIN , LARRAMONA GERARDO , DELATOUCHE BRUNO , PERE DANIEL
IPC分类号： H01L31/04
CPC分类号： H01G9/2031 , Y02B10/12 , Y02E10/542
摘要： PROBLEM TO BE SOLVED: To provide a photovoltaic device in which stability and reproducibility are more improved. SOLUTION: The present invention relates to a type of solid-state photovoltaic cell 1 that includes three organic and solid-state materials, and further includes: porous layers 2 of a transparent n-type semiconductor compound; a layer 3 of a transparent p-type semiconductor compound for filling at least part of a hole of the porous layers; and an inorganic absorber compound for forming an aggregate 4 between the two semiconductor compounds of the n-type and p-type layers at least part of which is discontiguous, wherein the semiconductor compound and the absorber include different oxidation products 5, and the oxidation products form a discontinuous portion of an interface layer which is disposed between the two layers of the n-type and p-type semiconductor compounds and/or between the aggregate of the absorber and a layer of the p-type semiconductor compound. The oxidation product of the interface layer is obtained by oxidation treatment of the cell 1 and includes visible light irradiation under the existence of a gas containing oxygen. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供其中更加提高稳定性和再现性的光伏器件。解决方案：本发明涉及一种包含三种有机和固态材料的固态光伏电池1，还包括：透明n型半导体化合物的多孔层2; 用于填充多孔层的孔的至少一部分的透明p型半导体化合物的层3; 以及无机吸收剂化合物，用于在其至少一部分是不连续的n型和p型层的两种半导体化合物之间形成聚集体4，其中半导体化合物和吸收剂包括不同的氧化产物5，氧化产物形成设置在n型和p型半导体化合物的两层之间和/或在吸收体的集合体和p型半导体化合物层之间的界面层的不连续部分。界面层的氧化产物通过电池1的氧化处理获得，并且在含氧气体存在下包括可见光照射。版权所有（C）2011，JPO＆INPIT

3. 发明专利

JP2006216958A Solid state photocell device having penetration form including new absorber or semiconductor material 有权
标题翻译：具有渗透形式的固体光电子器件包括新的吸收材料或半导体材料
公开(公告)号：JP2006216958A
公开(公告)日：2006-08-17
申请号：JP2006026482
申请日：2006-02-03
申请人： Aisin Seiki Co Ltd , アイシン精機株式会社
发明人： CHONE CHRISTOPHE , BAYON ROCIO , JACOB ALAIN , LARRAMONA GERARDO , SAKAKURA DAISUKE
IPC分类号： H01L31/04
CPC分类号： H01L31/03529 , H01L31/036 , Y02B10/10 , Y02E10/50
摘要： PROBLEM TO BE SOLVED: To provide a photocell device including a new absorber or semiconductor material and having improved characteristics and performance. SOLUTION: This invention relates to a solid state photocell device having a type including a porous substrate (1) consisting of transparent n-type semiconductor metal oxide having pores of 10-100 nm. In the photocell device, the inner surface of the pore is coated with a thin absorbing layer (2) consisting of an absorber compound and the pore is filled with a coat layer (3) consisting of a solid and transparent p-type semiconductor material at volume percentage of at least 10%, preferably more than 15%. Further the photocell device is provided with at least one layer out of the following layers, i. e. the absorbing layer (2) consisting of a composition selected from a metal sulfide containing a metal selected from Bi, Sn, Cu, and Mo and cobalt oxide and the coat layer (3) consisting of nickel oxide. This invention is related also with the preparation procedure of the device and that of the base substrate useful for the device based on the invention. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种包括新型吸收体或半导体材料并具有改进的特性和性能的光电池装置。解决方案：本发明涉及具有由具有10-100nm的孔的透明n型半导体金属氧化物构成的多孔基材（1）的类型的固态光电池器件。在光电池装置中，孔的内表面涂覆有由吸收剂化合物构成的薄吸收层（2），并且孔被填充有由固体和透明的p型半导体材料组成的涂层（3）体积百分比至少为10％，优选大于15％。此外，光电池装置设置有以下层中的至少一层，即，即由选自Bi，Sn，Cu，Mo和氧化钴的金属的金属硫化物和由氧化镍组成的涂层（3）组成的吸收层（2）。本发明还涉及用于基于本发明的装置的装置和基底基板的制备方法。版权所有（C）2006，JPO＆NCIPI

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