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    • 31. 发明专利
    • MANUFACTURE OF SILICON WAFER
    • JPH02312241A
    • 1990-12-27
    • JP13434389
    • 1989-05-26
    • NIPPON STEEL CORPNITTETSU DENSHI KK
    • SAITO HAJIMEHARADA HIROBUMISUZUKI KENICHIHATANAKA HIROYUKI
    • H01L21/322
    • PURPOSE:To make a wafer superior in a gettering power and hard in warp at the time of a heat treatment, and to contrive the improvement of the yield of the formation of devices by a method wherein the temperature at a time when the wafer is made to heat up in a stepwise manner in order from a low temperature and a heating-up temperature are rationalized. CONSTITUTION:A silicon wafer is subjected to oxygen out diffusion heat treatment at a temperature of 1000 deg.C or higher. Then, after the wafer is corrected for five hours or more at a temperature region between 550 deg.C and 630 deg.C, it is made to heat up to a temperature of the following stage of a temperature difference of 10 deg.C to 40 deg.C at a heating-up speed less than 0.1 deg.C/minute. A correction is repeated for two hours or more, the wafer is made to heat up in order up to a temperature region of 630 deg.C to 70 deg.C and a multistage treatment is performed by the correction. After that, a high-temperature heat treatment is performed in a temperature range of 950 deg.C to 1100 deg.C. Thereby, even after the wafer goes through a heat treatment for the formation of a device, it has a sufficient gettering power, a wafer hard to swarp is obtained and the yield of the formation of various silicon IC devices can be improved.
    • 32. 发明专利
    • CHARGED PARTICLE ANALYZING DEVICE FOR ELIMINATION OF ELECTROSTATIC CHARGING
    • JPH01194256A
    • 1989-08-04
    • JP1839788
    • 1988-01-28
    • NIPPON STEEL CORP
    • HAYASHI SHUNICHIHASHIGUCHI HIDEHIROSUZUKI KENICHIOTSUBO TAKASHI
    • G01N23/22G01N21/62H01J37/20H01J37/244H01J37/252
    • PURPOSE:To provide a charged particle analyzing device which is applicable both to positive and negative charging and also to the case in which the degree of charging varies during measurement by irradiating the beam of light to a specimen, wherein the light is in a specific wavelength to cancel the charging of the measured part on the surface of specimen including wavelengths longer than the band gap of the specimen substance. CONSTITUTION:During measurement, the light 7 from a light irradiating device 6 for canceling of charging is irradiated to a specimen 1 in order to cancel the charging of the part to be measured. This light for canceling the charging lies within the range 200-2000nm and includes wavelengths corresponding to the energy over the band gap energy of the specimen components. When the light having a higher energy than that corresponding to the band gap of the component concerned is irradiated to the specimen, electrons in the value electron range of specimen atoms are energized to make transfer to the transmission band, and the electrical conductivity is increased, whereby electron transfer between the measured part and inside the specimen becomes easier to accomplish canceling of the charging. The light irradiation to the specimen is made by a monochrometer 18. An optical fiber 19 is used to introduce the light from this monochrometer into analyzer.
    • 38. 发明专利
    • MANUFACTURE OF TITANIUM CLAD STEEL
    • JPS6448681A
    • 1989-02-23
    • JP20340787
    • 1987-08-18
    • NIPPON STEEL CORP
    • HASE TAIJIOGAWA TADAOSUZUKI KENICHINAITO HIROMITSUKONDO MASAYOSHISOEDA SEIICHI
    • B23K11/20B23K11/06
    • PURPOSE:To easily obtain Ti clad steel having an excellent material characteristic at the low cost by interposing extremely low C steel in the joining surface between Ti material and steel as insert material to press and join these by resistance welding and eliminating the need of heat treatment after joining. CONSTITUTION:With laminated assembly material holding an extremely low C steel plate 2 between base metal 3 and a Ti plate 1 of cladding material, while the load is applied between the Ti plate 1 and the base metal 3 by loading mechanisms 6 attached to roller electrodes 4 of a resistance welding machine 7, the roller electrodes 4 are electrified. An electric circuit is formed on 4A-1-2-3-4B-5 and resistance heats are generated on the interface between the Ti plate 1 and the extremely low C steel plate 2 and the interface between the extremely low C steel plate 2 and the base metal 3 and both the interfaces are molten and welded. The resistance welding of a beltlike zone corresponding to width of the roller electrodes 4A and 4B can be performed by rotating the roller electrodes 4A and 4B to carry out it continuously while the load is applied by the loading mechanisms 6.
    • 39. 发明专利
    • SPECTROCHEMICAL ANALYSIS METHOD USING GLOW DISCHARGE
    • JPS60185142A
    • 1985-09-20
    • JP4009684
    • 1984-03-02
    • NIPPON STEEL CORP
    • SUZUKI KENICHIHENMI NAOKI
    • G01N21/67
    • PURPOSE:To measure the element concentration and the thickness of a surface layer, by measuring the depth profile of the surface layer of a solid by a spectrochemical analysis method usig glow discharge, converting the intensity of light emission into the weight of the element by a light-emitting-intensity integrating method, and converting the sputtering time into the thickness. CONSTITUTION:The depth profile of the surface layer of a solid, which is expressed by the sputtering time and the light emitting intensity of an element, is measured by spectrochemical analysis using glow discharge. The depth profile is divided at every unit time. The integrated quantity of the light emitting intensity of each element within the unit time is converted into the weight for every element, which is sputtered for every unit time, by the expression in the Figure, where Wi is the sputtered weight of each element, Ii is the light emitting intensity of each element, and Ki is the empirically obtained weight conversion coefficient of each element. Based on the sputtered weight, the composition and the thickness at the unit time are determined, and the element concentration and the thickness of the surface layer of the solid are measured.