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1. 发明专利

JPH07245281A CLEANING LIQUID AND CLEANING METHOD 失效
公开(公告)号：JPH07245281A
公开(公告)日：1995-09-19
申请号：JP5825894
申请日：1994-03-04
申请人： NIPPON STEEL CORP , NITTETSU DENSHI KK
发明人： MORI YOSHIHIRO , SAKON TADASHI , KAMIMURA KENICHI , HATANAKA HIROYUKI , TARUNAGA SHINJI
IPC分类号： B08B3/08 , C11D1/22 , C11D7/06 , C11D7/18 , H01L21/304 , H01L21/308
摘要： PURPOSE:To provide cleaning liquid and a cleaning method whereby stubborn dirt can be removed from silicon semiconductors. CONSTITUTION:A cleaning liquid is the aqueous alkaline oxidizing solution including both hydroxide of alkaline metals whose gram molecule per liter is not smaller than 0.05mol/l and is not larger than 5mol/l and the hydrogen peroxide whose gram molecule per liter is not smaller than 0.02mol/l and is not larger than 0.5mol/l. Further, in this cleaning liquid, a surface-active agent whose gram molecule per liter is not smaller than 0.0001mol/l and is not larger than 0.01mol/l can be included allowably. As the surface-active agent, an alkyl benzen sulfonate can be used allowably. Moreover, a ultrasonic vibration can be used allowably together with this cleaning liquid.

2. 发明专利

JPH06314684A LIQUID AND METHOD FOR ETCHING OF SILICON WAFER 失效
公开(公告)号：JPH06314684A
公开(公告)日：1994-11-08
申请号：JP10440893
申请日：1993-04-30
申请人： NIPPON STEEL CORP , NITTETSU DENSHI KK
发明人： KAMIMURA KENICHI , SAKON TADASHI , MIURA AKIRA , TARUNAGA SHINJI , HATANAKA HIROYUKI
IPC分类号： C23F1/08 , C23F1/24 , H01L21/306 , H01L21/308
摘要： PURPOSE:To provide a wafer chemical etching liquid for the manufacture of a silicon semiconductor wafer and to provide an etching method which uses the liquid. CONSTITUTION:The etching liquid of a silicon semiconductor wafer is featured in such a way that silicon at 0.36 to 0.80mol/liter has been dissolved in a solution having a composition of HF/NHO3=0.30 to 0.40, (HF+HNO3)/CH3COOH =0.80 to 3.00 and (HF+HNO3)/H2O=0.82 to 2.90 in terms of the ratio of wt.%. The etching method of the silicon semiconductor wafer is featured in such a way that the etching liquid is used, that the temperature of the etching liquid is adjusted to a temperature of 20 to 60 deg.C and that the wafer is immersed in the etching liquid while it is being shaken.

3. 发明专利

JPH0642487B2 失效
公开(公告)号：JPH0642487B2
公开(公告)日：1994-06-01
申请号：JP13434389
申请日：1989-05-26
申请人： NIPPON STEEL CORP , NITTETSU DENSHI KK
发明人： SAITO HAJIME , HARADA HIROBUMI , SUZUKI KENICHI , HATANAKA HIROYUKI
IPC分类号： H01L21/322

4. 发明专利

JPH02312241A MANUFACTURE OF SILICON WAFER 失效
公开(公告)号：JPH02312241A
公开(公告)日：1990-12-27
申请号：JP13434389
申请日：1989-05-26
申请人： NIPPON STEEL CORP , NITTETSU DENSHI KK
发明人： SAITO HAJIME , HARADA HIROBUMI , SUZUKI KENICHI , HATANAKA HIROYUKI
IPC分类号： H01L21/322
摘要： PURPOSE:To make a wafer superior in a gettering power and hard in warp at the time of a heat treatment, and to contrive the improvement of the yield of the formation of devices by a method wherein the temperature at a time when the wafer is made to heat up in a stepwise manner in order from a low temperature and a heating-up temperature are rationalized. CONSTITUTION:A silicon wafer is subjected to oxygen out diffusion heat treatment at a temperature of 1000 deg.C or higher. Then, after the wafer is corrected for five hours or more at a temperature region between 550 deg.C and 630 deg.C, it is made to heat up to a temperature of the following stage of a temperature difference of 10 deg.C to 40 deg.C at a heating-up speed less than 0.1 deg.C/minute. A correction is repeated for two hours or more, the wafer is made to heat up in order up to a temperature region of 630 deg.C to 70 deg.C and a multistage treatment is performed by the correction. After that, a high-temperature heat treatment is performed in a temperature range of 950 deg.C to 1100 deg.C. Thereby, even after the wafer goes through a heat treatment for the formation of a device, it has a sufficient gettering power, a wafer hard to swarp is obtained and the yield of the formation of various silicon IC devices can be improved.

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