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    • 2. 发明专利
    • MANUFACTURE OF SILICON WAFER
    • JPH02312241A
    • 1990-12-27
    • JP13434389
    • 1989-05-26
    • NIPPON STEEL CORPNITTETSU DENSHI KK
    • SAITO HAJIMEHARADA HIROBUMISUZUKI KENICHIHATANAKA HIROYUKI
    • H01L21/322
    • PURPOSE:To make a wafer superior in a gettering power and hard in warp at the time of a heat treatment, and to contrive the improvement of the yield of the formation of devices by a method wherein the temperature at a time when the wafer is made to heat up in a stepwise manner in order from a low temperature and a heating-up temperature are rationalized. CONSTITUTION:A silicon wafer is subjected to oxygen out diffusion heat treatment at a temperature of 1000 deg.C or higher. Then, after the wafer is corrected for five hours or more at a temperature region between 550 deg.C and 630 deg.C, it is made to heat up to a temperature of the following stage of a temperature difference of 10 deg.C to 40 deg.C at a heating-up speed less than 0.1 deg.C/minute. A correction is repeated for two hours or more, the wafer is made to heat up in order up to a temperature region of 630 deg.C to 70 deg.C and a multistage treatment is performed by the correction. After that, a high-temperature heat treatment is performed in a temperature range of 950 deg.C to 1100 deg.C. Thereby, even after the wafer goes through a heat treatment for the formation of a device, it has a sufficient gettering power, a wafer hard to swarp is obtained and the yield of the formation of various silicon IC devices can be improved.
    • 7. 发明专利
    • SPECTROCHEMICAL ANALYSIS METHOD USING GLOW DISCHARGE
    • JPS60185143A
    • 1985-09-20
    • JP4009784
    • 1984-03-02
    • NIPPON STEEL CORP
    • SUZUKI KENICHINISHISAKA KOUICHIOOTSUBO TAKASHI
    • G01N21/67
    • PURPOSE:To measure the composition and the thickness of a surface layer, by measuring the depth profile of the surface of a solid by spectrochemical analysis using glow discharge, converting the sputtering time into the thickness by matrix effect correction, and converting light emitting intensity into element concentration. CONSTITUTION:The depth profile of the surface of a solid, which is expressed by the sputtering time and the light emitting intensity of an element, is measured by spectrochemical analysis using glow discharge. The depth profile is divided at every unit time. The light emitting intensity of each element is converted into the concentration of each element by correcting the mutual interference effects of coexisting elements, and the composition is determind. Then, based on the determined composition, the sputtering speed is corrected, and the thickness at every unit time is determined. Based on the obtained composition and the thickness, the sputtering weight at the part of the unit time is determined. Thus the element concentration, thickness and weight of the surface layer of the solid are determined.
    • 9. 发明专利
    • Magnetic field setting method for mass spectrometer
    • 用于大量光谱仪的磁场设置方法
    • JPS5757461A
    • 1982-04-06
    • JP13074480
    • 1980-09-22
    • Nippon Steel Corp
    • SUKAI TETSUYASUZUKI KENICHISUGANO HIDEO
    • G01N27/62H01J49/20H01J49/26H01J49/32
    • H01J49/20
    • PURPOSE:To improve the uniqueness in corresponding relation between a magnetic field value and coil current by hunting the coil current near the objective magnetic field value and bringing the coil current close to the objective magnetic field value while the amplitude of the hunting is diminished gradually. CONSTITUTION:Secondary ions generated from a sample 1 are accelerated with an acceleration electrode 2, detected with an ion detector 10 through an electric field 3 and a magnetic field 4, and the results are output on an output device 12 through an arithmetic unit 11. On the other hand, all mass numbers required to analyse are obtained by calculation or measurement, and are previously memorised in a memory 13. When, the magnetic field 4, a magnetic field detecting element 5, magnetic field detecting circuit 6, magnetic field controller 8, and magnetic field generating circuit 9 form a feedback loop which is to obtain the magnetic field intensity corresponding to output of a magnetic field setting devive 7, a coil current is hunted near the objective magnetic field value by its dynamic characteristics, and the coil current is brought rapidly close to the objective magnetic field value while the amplitude of hunting is being gradually diminished.
    • 目的:通过在线圈电流接近目标磁场值的同时提高磁场值与线圈电流对应关系的独特性,并使线圈电流接近目标磁场值,同时逐渐减小振幅。 构成:从样品1产生的二次离子用加速电极2加速,用离子检测器10通过电场3和磁场4检测,结果通过运算单元11输出到输出装置12上。 另一方面,分析所需的所有质量数均通过计算或测量获得,并且预先存储在存储器13中。当磁场4为磁场检测元件5,磁场检测电路6,磁场控制器 如图8所示,磁场产生电路9形成反馈回路,其是为了获得与磁场设定偏差7的输出相对应的磁场强度,线圈电流通过其动态特性被追踪到目标磁场值附近,线圈 电流迅速接近目标磁场值,同时狩猎的幅度逐渐减弱。